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STGP8NC60KD STGP8NC60KD STMicroelectronics stgp8nc60kd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 274 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.37 EUR
58+ 1.24 EUR
65+ 1.1 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 53
STGPL6NC60DI STMicroelectronics en.CD00229142.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 56W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGSH80HB65DAG STMicroelectronics STGSH80HB65DAG.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 68A
Type of module: IGBT
Topology: IGBT half-bridge
Case: ACEPACK SMIT
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 269A
Power dissipation: 250W
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW100H65FB2-4 STMicroelectronics stgw100h65fb2-4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW10M65DF2 STMicroelectronics en.DM00276219.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15H120DF2 STMicroelectronics en.DM00066773.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15H120F2 STMicroelectronics en.DM00109377.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15M120DF3 STMicroelectronics en.DM00113752.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW19NC60HD STGW19NC60HD STMicroelectronics stgw19nc60hd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.96 EUR
20+ 3.58 EUR
25+ 2.89 EUR
27+ 2.73 EUR
120+ 2.65 EUR
Mindestbestellmenge: 19
STGW20H60DF STMicroelectronics en.DM00087034.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20H65FB STMicroelectronics stgw20h65fb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 168W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 168W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20IH125DF STGW20IH125DF STMicroelectronics STGW20IH125DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 20A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 20A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20NC60V STMicroelectronics en.CD00003669.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20NC60VD STGW20NC60VD STMicroelectronics STGW20NC60VD.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 432 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.65 EUR
31+ 2.32 EUR
33+ 2.2 EUR
510+ 2.16 EUR
Mindestbestellmenge: 20
STGW20V60DF STGW20V60DF STMicroelectronics STGx20V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.46 EUR
120+ 2.95 EUR
Mindestbestellmenge: 16
STGW20V60F STMicroelectronics en.DM00088507.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25H120DF2 STMicroelectronics en.DM00066775.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25H120F2 STMicroelectronics en.DM00109190.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25M120DF3 STMicroelectronics STGW25M120DF3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW28IH125DF STGW28IH125DF STMicroelectronics STGW28IH125DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.76 EUR
17+ 4.29 EUR
22+ 3.29 EUR
24+ 3.1 EUR
Mindestbestellmenge: 16
STGW30H60DFB STGW30H60DFB STMicroelectronics stgw30h60dfb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.72 EUR
17+ 4.23 EUR
22+ 3.37 EUR
23+ 3.19 EUR
120+ 3.13 EUR
Mindestbestellmenge: 16
STGW30H65FB STMicroelectronics stgw30h65fb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30M65DF2 STMicroelectronics STGW30M65DF2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC120HD STGW30NC120HD STMicroelectronics STGW30NC120HD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC60KD STGW30NC60KD STMicroelectronics STGW30NC60KD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.39 EUR
25+ 2.87 EUR
27+ 2.72 EUR
Mindestbestellmenge: 10
STGW30NC60VD STMicroelectronics en.CD00152202.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC60WD STGW30NC60WD STMicroelectronics STGW30NC60WD-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.82 EUR
16+ 4.66 EUR
17+ 4.4 EUR
120+ 4.23 EUR
Mindestbestellmenge: 13
STGW30V60DF STGW30V60DF STMicroelectronics STGW30V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.88 EUR
17+ 4.39 EUR
22+ 3.39 EUR
23+ 3.2 EUR
Mindestbestellmenge: 15
STGW39NC60VD STGW39NC60VD STMicroelectronics STGW39NC60VD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 126nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 220A
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 585 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.55 EUR
20+ 3.68 EUR
21+ 3.47 EUR
1020+ 3.35 EUR
Mindestbestellmenge: 11
STGW40H120DF2 STMicroelectronics en.DM00066778.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H120F2 STMicroelectronics en.DM00106123.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H60DLFB STMicroelectronics en.DM00079511.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65DFB STMicroelectronics STGW40H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65DFB-4 STMicroelectronics en.DM00269316.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65FB STMicroelectronics en.DM00093857.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40M120DF3 STMicroelectronics STGW40M120DF3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40NC60KD STMicroelectronics en.CD00201325.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40V60DF STGW40V60DF STMicroelectronics stgw40v60df.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.68 EUR
14+ 5.36 EUR
18+ 4.12 EUR
19+ 3.89 EUR
Mindestbestellmenge: 13
STGW40V60F STMicroelectronics en.DM00086251.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW50H65DFB2-4 STMicroelectronics stgw50h65dfb2-4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB STGW60H65DFB STMicroelectronics STGWx60H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB-4 STMicroelectronics en.DM00298799.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DRF STMicroelectronics en.DM00039960.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65FB STMicroelectronics en.DM00094070.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60V60DF STGW60V60DF STMicroelectronics STGW60V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.11 EUR
11+ 6.92 EUR
15+ 5.02 EUR
16+ 4.75 EUR
30+ 4.73 EUR
Mindestbestellmenge: 9
STGW60V60F STMicroelectronics stgw60v60f.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW75H65DFB2-4 STGW75H65DFB2-4 STMicroelectronics stgw75h65dfb2-4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.55 EUR
9+ 8.07 EUR
Mindestbestellmenge: 7
STGW75M65DF2 STMicroelectronics en.DM00249589.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW80H65DFB STGW80H65DFB STMicroelectronics stgw80h65dfb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.1 EUR
10+ 7.24 EUR
Mindestbestellmenge: 7
STGW80H65DFB-4 STMicroelectronics en.DM00213377.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW80V60DF STMicroelectronics en.DM00079438.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 469W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 469W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 448nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW8M120DF3 STMicroelectronics en.DM00294677.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA100H65DFB2 STMicroelectronics stgwa100h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15H120DF2 STGWA15H120DF2 STMicroelectronics en.DM00066773.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
14+ 5.11 EUR
3000+ 3.03 EUR
9000+ 3 EUR
Mindestbestellmenge: 10
STGWA15H120F2 STMicroelectronics en.DM00109377.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15M120DF3 STMicroelectronics en.DM00113752.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15S120DF3 STMicroelectronics en.DM00116910.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20H65DFB2 STMicroelectronics stgwa20h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20HP65FB2 STMicroelectronics stgwa20hp65fb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20IH65DF STMicroelectronics stgwa20ih65df.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 159W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 159W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGP8NC60KD stgp8nc60kd.pdf
STGP8NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 274 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
58+ 1.24 EUR
65+ 1.1 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 53
STGPL6NC60DI en.CD00229142.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 56W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGSH80HB65DAG STGSH80HB65DAG.pdf
Hersteller: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 68A
Type of module: IGBT
Topology: IGBT half-bridge
Case: ACEPACK SMIT
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 68A
Pulsed collector current: 269A
Power dissipation: 250W
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW100H65FB2-4 stgw100h65fb2-4.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW10M65DF2 en.DM00276219.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15H120DF2 en.DM00066773.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15H120F2 en.DM00109377.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW15M120DF3 en.DM00113752.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW19NC60HD stgw19nc60hd.pdf
STGW19NC60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.96 EUR
20+ 3.58 EUR
25+ 2.89 EUR
27+ 2.73 EUR
120+ 2.65 EUR
Mindestbestellmenge: 19
STGW20H60DF en.DM00087034.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20H65FB stgw20h65fb.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 168W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 168W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20IH125DF STGW20IH125DF.pdf
STGW20IH125DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 20A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 20A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20NC60V en.CD00003669.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW20NC60VD description STGW20NC60VD.pdf
STGW20NC60VD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 432 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.65 EUR
31+ 2.32 EUR
33+ 2.2 EUR
510+ 2.16 EUR
Mindestbestellmenge: 20
STGW20V60DF STGx20V60DF.pdf
STGW20V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.46 EUR
120+ 2.95 EUR
Mindestbestellmenge: 16
STGW20V60F en.DM00088507.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25H120DF2 en.DM00066775.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25H120F2 en.DM00109190.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW25M120DF3 STGW25M120DF3.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW28IH125DF STGW28IH125DF.pdf
STGW28IH125DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.76 EUR
17+ 4.29 EUR
22+ 3.29 EUR
24+ 3.1 EUR
Mindestbestellmenge: 16
STGW30H60DFB stgw30h60dfb.pdf
STGW30H60DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.72 EUR
17+ 4.23 EUR
22+ 3.37 EUR
23+ 3.19 EUR
120+ 3.13 EUR
Mindestbestellmenge: 16
STGW30H65FB stgw30h65fb.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30M65DF2 STGW30M65DF2.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC120HD STGW30NC120HD.pdf
STGW30NC120HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC60KD STGW30NC60KD.pdf
STGW30NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.39 EUR
25+ 2.87 EUR
27+ 2.72 EUR
Mindestbestellmenge: 10
STGW30NC60VD en.CD00152202.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW30NC60WD STGW30NC60WD-dte.pdf
STGW30NC60WD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.82 EUR
16+ 4.66 EUR
17+ 4.4 EUR
120+ 4.23 EUR
Mindestbestellmenge: 13
STGW30V60DF STGW30V60DF.pdf
STGW30V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.88 EUR
17+ 4.39 EUR
22+ 3.39 EUR
23+ 3.2 EUR
Mindestbestellmenge: 15
STGW39NC60VD STGW39NC60VD.pdf
STGW39NC60VD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 126nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 220A
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 585 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.55 EUR
20+ 3.68 EUR
21+ 3.47 EUR
1020+ 3.35 EUR
Mindestbestellmenge: 11
STGW40H120DF2 en.DM00066778.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H120F2 en.DM00106123.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H60DLFB en.DM00079511.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65DFB STGW40H65DFB.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65DFB-4 en.DM00269316.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40H65FB en.DM00093857.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40M120DF3 STGW40M120DF3.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40NC60KD en.CD00201325.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW40V60DF stgw40v60df.pdf
STGW40V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.68 EUR
14+ 5.36 EUR
18+ 4.12 EUR
19+ 3.89 EUR
Mindestbestellmenge: 13
STGW40V60F en.DM00086251.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW50H65DFB2-4 stgw50h65dfb2-4.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB STGWx60H65DFB.pdf
STGW60H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB-4 en.DM00298799.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DRF en.DM00039960.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65FB en.DM00094070.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60V60DF STGW60V60DF.pdf
STGW60V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.11 EUR
11+ 6.92 EUR
15+ 5.02 EUR
16+ 4.75 EUR
30+ 4.73 EUR
Mindestbestellmenge: 9
STGW60V60F stgw60v60f.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW75H65DFB2-4 stgw75h65dfb2-4.pdf
STGW75H65DFB2-4
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.55 EUR
9+ 8.07 EUR
Mindestbestellmenge: 7
STGW75M65DF2 en.DM00249589.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW80H65DFB stgw80h65dfb.pdf
STGW80H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.1 EUR
10+ 7.24 EUR
Mindestbestellmenge: 7
STGW80H65DFB-4 en.DM00213377.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW80V60DF en.DM00079438.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 469W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 469W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 448nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW8M120DF3 en.DM00294677.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA100H65DFB2 stgwa100h65dfb2.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15H120DF2 en.DM00066773.pdf
STGWA15H120DF2
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
14+ 5.11 EUR
3000+ 3.03 EUR
9000+ 3 EUR
Mindestbestellmenge: 10
STGWA15H120F2 en.DM00109377.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15M120DF3 en.DM00113752.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA15S120DF3 en.DM00116910.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20H65DFB2 stgwa20h65dfb2.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20HP65FB2 stgwa20hp65fb2.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWA20IH65DF stgwa20ih65df.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 159W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 159W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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