Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (167163) > Seite 1125 nach 2787
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| STF5N95K5 | STMicroelectronics |
 STF5N95K5 THT N channel transistors |
Produkt ist nicht verfügbar |
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STF5NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 30W Mounting: THT Case: TO220FP Features of semiconductor devices: ESD protected gate Technology: SuperMESH3™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 2.2A On-state resistance: 3.7Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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STF6N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF6N65K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF6N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF6N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF6N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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STF6N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220FP Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF7LN80K5 | STMicroelectronics |
STF7LN80K5 THT N channel transistors |
Produkt ist nicht verfügbar |
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STF7N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7N95K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF7NM80 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF8N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF8N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STF8N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF8NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4.3A On-state resistance: 1.85Ω Type of transistor: N-MOSFET Power dissipation: 40W Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF8NM50N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF9N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 720mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF9NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 40W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 139 Stücke: Lieferzeit 7-14 Tag (e) |
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STFH13N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STFH24N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 72A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 46 Stücke |
Produkt ist nicht verfügbar |
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STFU10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 36A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STFW12N120K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STFW1N105K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 1.4A; Idm: 5.6A; 20W; TO3PF Mounting: THT Power dissipation: 20W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5.6A Drain-source voltage: 1.05kV Drain current: 1.4A On-state resistance: 11Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| STFW2N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STFW38N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STFW3N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF Drain-source voltage: 1.5kV Drain current: 1.6A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO3PF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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STFW4N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 63W; TO3PF Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 63W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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STG3157CTR | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Number of channels: 1 Interface: GPIO Case: SOT323-6L Supply voltage: 1.65...5.5V DC Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9747 Stücke: Lieferzeit 7-14 Tag (e) |
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STG719STR | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Supply voltage: 1.8...5.5V DC Interface: GPIO Mounting: SMD Case: SOT23-6 Number of channels: 1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2833 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGAP1BS | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO24-W Output current: -5...5A Output voltage: 1.5kV Number of channels: 1 Supply voltage: 4.5...36V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Kind of package: tube Insulation voltage: 4kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP1BSTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO24-W Output current: -5...5A Output voltage: 1.5kV Number of channels: 1 Supply voltage: 4.5...36V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Kind of package: reel; tape Insulation voltage: 4kV Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2DM | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO16 Output current: -4...4A Output voltage: 1.7kV Number of channels: 2 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 4.8kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2DMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO16 Output current: -4...4A Output voltage: 1.7kV Number of channels: 2 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 4.8kV Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2GSCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8-W Output current: -3...2A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2GSNCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8-W Output current: -3...2A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2HDMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO36-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 2 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2HSCMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2HSM | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2HSMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SCM | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 4.8kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SCMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 4.8kV Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICD | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO36-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 2 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICDTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO36-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 2 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICS | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: 4A Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Frequency: 1MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSACTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.25V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSANCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.25V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSC | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSNC | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 4.8kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SICSNCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 4.8kV Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| STGAP2SICSNTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 4.8kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| STGAP2SICSTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Output voltage: 1.2kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGAP2SM | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Insulation voltage: 4.8kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| STGAP2SMTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -4...4A Output voltage: 1.7kV Number of channels: 1 Supply voltage: 3.1...5.5V Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Insulation voltage: 4.8kV Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
| STF5N95K5 |
|
Hersteller: STMicroelectronics
STF5N95K5 THT N channel transistors
STF5N95K5 THT N channel transistors
Produkt ist nicht verfügbar
| STF5NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 30W
Mounting: THT
Case: TO220FP
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 30W
Mounting: THT
Case: TO220FP
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 44+ | 1.63 EUR |
| 47+ | 1.53 EUR |
| STF6N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 20W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.76 EUR |
| 47+ | 1.53 EUR |
| 52+ | 1.39 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1 EUR |
| 1000+ | 0.97 EUR |
| STF6N65K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF6N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF6N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF6N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 33+ | 2.17 EUR |
| 46+ | 1.57 EUR |
| 49+ | 1.49 EUR |
| 1000+ | 1.43 EUR |
| STF6N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 6A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.39 EUR |
| 33+ | 2.17 EUR |
| 41+ | 1.76 EUR |
| 44+ | 1.66 EUR |
| 250+ | 1.6 EUR |
| STF7LN80K5 |
|
Hersteller: STMicroelectronics
STF7LN80K5 THT N channel transistors
STF7LN80K5 THT N channel transistors
Produkt ist nicht verfügbar
| STF7N105K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N60DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7N95K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF7NM80 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF8N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF8N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF8N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF8NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
On-state resistance: 1.85Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
On-state resistance: 1.85Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.55 EUR |
| 34+ | 2.13 EUR |
| 36+ | 2.02 EUR |
| STF8NM50N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF9N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STF9NK90Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.42 EUR |
| 48+ | 1.5 EUR |
| 50+ | 1.43 EUR |
| STFH13N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STFH24N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 46 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 72A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 46 Stücke
Produkt ist nicht verfügbar
| STFU10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STFW12N120K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STFW1N105K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 1.4A; Idm: 5.6A; 20W; TO3PF
Mounting: THT
Power dissipation: 20W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5.6A
Drain-source voltage: 1.05kV
Drain current: 1.4A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 1.4A; Idm: 5.6A; 20W; TO3PF
Mounting: THT
Power dissipation: 20W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5.6A
Drain-source voltage: 1.05kV
Drain current: 1.4A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.1 EUR |
| 26+ | 2.79 EUR |
| 34+ | 2.12 EUR |
| 36+ | 2.01 EUR |
| STFW2N105K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STFW38N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STFW3N150 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO3PF
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO3PF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.16 EUR |
| 17+ | 4.22 EUR |
| 18+ | 3.98 EUR |
| 60+ | 3.83 EUR |
| STFW4N150 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.71 EUR |
| 12+ | 6.03 EUR |
| 13+ | 5.71 EUR |
| STG3157CTR |
|
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Number of channels: 1
Interface: GPIO
Case: SOT323-6L
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Number of channels: 1
Interface: GPIO
Case: SOT323-6L
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9747 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 155+ | 0.46 EUR |
| 304+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| STG719STR |
|
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Mounting: SMD
Case: SOT23-6
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Mounting: SMD
Case: SOT23-6
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2833 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 92+ | 0.79 EUR |
| 148+ | 0.49 EUR |
| 156+ | 0.46 EUR |
| STGAP1BS |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO24-W
Output current: -5...5A
Output voltage: 1.5kV
Number of channels: 1
Supply voltage: 4.5...36V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Insulation voltage: 4kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO24-W
Output current: -5...5A
Output voltage: 1.5kV
Number of channels: 1
Supply voltage: 4.5...36V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Insulation voltage: 4kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP1BSTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO24-W
Output current: -5...5A
Output voltage: 1.5kV
Number of channels: 1
Supply voltage: 4.5...36V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Insulation voltage: 4kV
Anzahl je Verpackung: 1000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO24-W; -5÷5A; 1.5kV; Ch: 1; Usup: 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO24-W
Output current: -5...5A
Output voltage: 1.5kV
Number of channels: 1
Supply voltage: 4.5...36V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Insulation voltage: 4kV
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGAP2DM |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO16
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO16
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2DMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO16
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO16; -4÷4A; 1.7kV
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO16
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| STGAP2GSCTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -3...2A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -3...2A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2GSNCTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -3...2A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -3÷2A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -3...2A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2HDMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2HSCMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2HSM |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2HSMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGAP2SCM |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SCMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| STGAP2SICD |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICDTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO36-W; -4÷4A; 1.2kV; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO36-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 2
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGAP2SICS |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: 4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: 4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSACTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.25V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.25V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSANCTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.25V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.25V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSC |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSCTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSNC |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSNCTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSNTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SICSTR |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Output voltage: 1.2kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SM |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Insulation voltage: 4.8kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STGAP2SMTR |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -4÷4A; 1.7kV; Ch: 1; Usup: 3.1÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...4A
Output voltage: 1.7kV
Number of channels: 1
Supply voltage: 3.1...5.5V
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Insulation voltage: 4.8kV
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar