Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (167163) > Seite 1126 nach 2787
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STGAP4S | STMicroelectronics | STGAP4S MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
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STGAP4STR | STMicroelectronics | STGAP4STR MOSFET/IGBT drivers |
Produkt ist nicht verfügbar |
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STGB10H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NB37LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 440V Collector current: 20A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NB40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB14NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB15H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB15M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 45nC Case: D2PAK Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 60A Type of transistor: IGBT Power dissipation: 136W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB18N40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 30A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB19NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20H65FB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 20A Pulsed collector current: 40A Type of transistor: IGBT Power dissipation: 150W Features of semiconductor devices: ESD protected gate; internally clamped; logic level Gate charge: 24nC Collector-emitter voltage: 390V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20N45LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20NB41LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 20A Power dissipation: 200W Case: D2PAK Pulsed collector current: 80A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB20V60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB25N36LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: D2PAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB30H60DFB | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30H60DLLFBAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB30V60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK Mounting: SMD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 120A Type of transistor: IGBT Power dissipation: 258W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 163nC Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB3NC120HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STGB40H65FB | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB40V60F | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 283W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 226nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB4M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 86W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB50H65FB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB5H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB6M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB6NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB7H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB7NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB8NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD10HF60KD | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode Kind of package: reel; tape Application: ignition systems Type of transistor: IGBT Power dissipation: 62.5W Gate charge: 23nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2159 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD18N40LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 420V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 420V Collector current: 25A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STGD19N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD20N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD20N45LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD25N36LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STGD3HF60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4.5A Power dissipation: 38W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD3NB60SDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 3A; 48W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3A Power dissipation: 48W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 25A Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD4H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD4M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD5H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD5NB120SZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 10A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: internally clamped Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD6M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD6NC60H-1 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: IPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD6NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 56W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2050 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD7NB60ST4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 55W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 55W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2418 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD7NC60HT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 70W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 70W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGD8NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGE200NB60S | STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W Mechanical mounting: screw Collector current: 150A Pulsed collector current: 400A Max. off-state voltage: 0.6kV Power dissipation: 600W Case: ISOTOP Electrical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
STGB10H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB10M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB10NB37LZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB10NB40LZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB10NC60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB10NC60KDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB14NC60KDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STGB15H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB15M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 45nC
Case: D2PAK
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 136W
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 45nC
Case: D2PAK
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 136W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB18N40LZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB19NC60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20H65DFB2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20H65FB2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20N40LZ |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 20A
Pulsed collector current: 40A
Type of transistor: IGBT
Power dissipation: 150W
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Gate charge: 24nC
Collector-emitter voltage: 390V
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 20A
Pulsed collector current: 40A
Type of transistor: IGBT
Power dissipation: 150W
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Gate charge: 24nC
Collector-emitter voltage: 390V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20N45LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20NB41LZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB20V60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB25N36LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB25N40LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STGB30H60DFB |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB30H60DLLFBAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB30H65DFB2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB30M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB30V60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Mounting: SMD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Mounting: SMD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STGB3NC120HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STGB40H65FB |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB40V60F |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB4M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB50H65FB2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB5H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB6M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB6NC60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB7H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB7NC60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGB8NC60KDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD10HF60KD |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel; tape
Application: ignition systems
Type of transistor: IGBT
Power dissipation: 62.5W
Gate charge: 23nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel; tape
Application: ignition systems
Type of transistor: IGBT
Power dissipation: 62.5W
Gate charge: 23nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD10NC60KDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2159 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.69 EUR |
48+ | 1.5 EUR |
55+ | 1.3 EUR |
59+ | 1.23 EUR |
500+ | 1.19 EUR |
STGD18N40LZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 420V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 420V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 420V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 420V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STGD19N40LZ |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD20N40LZ |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD20N45LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD25N36LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD25N40LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STGD3HF60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD3NB60SDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD4H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD4M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD5H60DF |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD5NB120SZT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 10A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 10A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD6M65DF2 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD6NC60H-1 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD6NC60HDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2050 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.44 EUR |
56+ | 1.29 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
STGD7NB60ST4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2418 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.62 EUR |
31+ | 2.35 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
5000+ | 1.62 EUR |
STGD7NC60HT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGD8NC60KDT4 |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGE200NB60S |
Hersteller: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Mechanical mounting: screw
Collector current: 150A
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Power dissipation: 600W
Case: ISOTOP
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Mechanical mounting: screw
Collector current: 150A
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Power dissipation: 600W
Case: ISOTOP
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar