STGD4H60DF

STGD4H60DF STMicroelectronics


stgd4h60df.pdf Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop 600 V, 4 A high speed H series IGBT
auf Bestellung 250 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.65 EUR
10+ 1.36 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details STGD4H60DF STMicroelectronics

Description: IGBT TRENCH FS 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 73 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A, Supplier Device Package: DPAK (TO-252) type C2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/121ns, Switching Energy: 68µJ (on), 45µJ (off), Test Condition: 400V, 3A, 47Ohm, 15V, Gate Charge: 35 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 75 W.

Weitere Produktangebote STGD4H60DF nach Preis ab 1.09 EUR bis 1.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STGD4H60DF Hersteller : STMicroelectronics stgd4h60df.pdf Description: IGBT TRENCH FS 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
Supplier Device Package: DPAK (TO-252) type C2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/121ns
Switching Energy: 68µJ (on), 45µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 75 W
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
12+ 1.49 EUR
25+ 1.42 EUR
100+ 1.16 EUR
250+ 1.09 EUR
Mindestbestellmenge: 11
STGD4H60DF Hersteller : STMicroelectronics stgd4h60df.pdf STGD4H60DF SMD IGBT transistors
Produkt ist nicht verfügbar
STGD4H60DF Hersteller : STMicroelectronics stgd4h60df.pdf Description: IGBT TRENCH FS 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
Supplier Device Package: DPAK (TO-252) type C2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/121ns
Switching Energy: 68µJ (on), 45µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 75 W
Produkt ist nicht verfügbar