STGB10H60DF STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 600V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.21 EUR |
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Technische Details STGB10H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.5ns/103ns, Switching Energy: 83µJ (on), 140µJ (off), Test Condition: 400V, 10A, 10Ohm, 15V, Gate Charge: 57 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 115 W.
Weitere Produktangebote STGB10H60DF nach Preis ab 1.3 EUR bis 2.97 EUR
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STGB10H60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
auf Bestellung 4539 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGB10H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(2+Tab) D2PAK T/R |
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STGB10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(2+Tab) D2PAK T/R |
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STGB10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB10H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 115mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB10H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGB10H60DF | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |