STF7N105K5 STMicroelectronics
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.63 EUR |
| 10+ | 3.89 EUR |
| 25+ | 3.27 EUR |
| 100+ | 2.92 EUR |
| 250+ | 2.85 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.36 EUR |
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Technische Details STF7N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 4A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V.
Weitere Produktangebote STF7N105K5 nach Preis ab 2.46 EUR bis 4.77 EUR
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STF7N105K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 1050V 4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STF7N105K5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STF7N105K5 - Leistungs-MOSFET, n-Kanal, 1.05 kV, 4 A, 1.4 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 1.05kV rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 25W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm |
auf Bestellung 1472 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF7N105K5 | Hersteller : STMicroelectronics |
STF7N105K5 THT N channel transistors |
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