STGW40H120DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 488 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/152ns
Switching Energy: 1mJ (on), 1.32mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 187 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 468 W
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.68 EUR |
| 30+ | 13.31 EUR |
| 120+ | 11.91 EUR |
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Technische Details STGW40H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 488 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/152ns, Switching Energy: 1mJ (on), 1.32mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 187 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 468 W.
Weitere Produktangebote STGW40H120DF2 nach Preis ab 9.79 EUR bis 17.27 EUR
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STGW40H120DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW40H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW40H120DF2 - IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 806 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGW40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGW40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |