STGWA15M120DF3 STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
auf Bestellung 600 Stücke:
Lieferzeit 136-140 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.23 EUR |
10+ | 6.07 EUR |
25+ | 5.74 EUR |
100+ | 4.91 EUR |
250+ | 4.65 EUR |
600+ | 4.36 EUR |
1200+ | 3.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWA15M120DF3 STMicroelectronics
Description: IGBT 1200V 30A 259W, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 270 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 550µJ (on), 850µJ (off), Test Condition: 600V, 15A, 22Ohm, 15V, Gate Charge: 53 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.
Weitere Produktangebote STGWA15M120DF3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STGWA15M120DF3 | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGWA15M120DF3 | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGWA15M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
STGWA15M120DF3 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 30A 259W Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 270 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 550µJ (on), 850µJ (off) Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 259 W |
Produkt ist nicht verfügbar |
||
STGWA15M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |