| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MC74HC245ADWG | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state |
auf Bestellung 321 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC245ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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MM74HC245AMTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC245AMTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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| MM74HC245ASJ | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Case: SOP20 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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MM74HC245AWM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 8 Quiescent current: 80µA Kind of output: 3-state Manufacturer series: HC Kind of integrated circuit: bidirectional; transceiver Case: SO20-W Supply voltage: 2...6V DC |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC245AWMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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1N4448WS | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
auf Bestellung 3550 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13910S | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 63...160 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BD13910STU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 40...250 Mounting: THT Kind of package: tube |
auf Bestellung 887 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13916S | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BD13916STU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 40...250 Mounting: THT Kind of package: tube |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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BD139G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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2N7000-D75Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1241 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000BU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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2N7000TA | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
auf Bestellung 1430 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 10958 Stücke: Lieferzeit 14-21 Tag (e) |
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| BS170-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BS170-D75Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1957 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2461 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170-D27Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40LT1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 651 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| CAT24C08C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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| CAT24C08C4CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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| CAT24C08C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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BD14010STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Mounting: THT Collector-emitter voltage: 80V Current gain: 63...160 Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: tube Case: TO126ISO |
Produkt ist nicht verfügbar |
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BD14016S | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BD14016STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 1.5A Collector-emitter voltage: 80V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: PNP Current gain: 100...250 Kind of package: tube |
Produkt ist nicht verfügbar |
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BD140G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Mounting: THT Collector-emitter voltage: 80V Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: bulk Case: TO225 |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1401 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Mounting: SMD Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Semiconductor structure: single diode Load current: 0.2A Max. forward voltage: 1.1V Max. off-state voltage: 200V Capacitance: 2pF Kind of package: reel; tape Case: SOT23 |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1403 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Mounting: SMD Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Semiconductor structure: double series Load current: 0.2A Max. forward voltage: 1.1V Max. off-state voltage: 200V Capacitance: 2pF Kind of package: reel; tape Case: SOT23 |
Produkt ist nicht verfügbar |
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MMBD1404 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Kind of package: reel; tape Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Type of diode: switching Mounting: SMD Case: SOT23 |
auf Bestellung 1890 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1404A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW Mounting: SMD Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Semiconductor structure: common cathode; double Load current: 0.6A Max. forward voltage: 1.25V Max. off-state voltage: 175V Capacitance: 2pF Kind of package: reel; tape Case: SOT23 |
Produkt ist nicht verfügbar |
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MMBD1405 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Mounting: SMD Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Semiconductor structure: common anode; double Load current: 0.2A Max. forward voltage: 1.1V Max. off-state voltage: 200V Capacitance: 2pF Kind of package: reel; tape Case: SOT23 |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1405A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW Mounting: SMD Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA Power dissipation: 0.35W Semiconductor structure: common anode; double Load current: 0.6A Max. forward voltage: 1.25V Max. off-state voltage: 175V Capacitance: 2pF Kind of package: reel; tape Case: SOT23 |
Produkt ist nicht verfügbar |
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2N3904BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 300MHz |
auf Bestellung 2934 Stücke: Lieferzeit 14-21 Tag (e) |
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2N3904TFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Current gain: 30...300 Mounting: THT Frequency: 300MHz |
auf Bestellung 1955 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 7840 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138LT3G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ113 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA Kind of package: reel; tape Gate-source voltage: -35V Mounting: SMD Case: SOT23 Gate current: 50mA On-state resistance: 100Ω Type of transistor: N-JFET Power dissipation: 0.35W Polarisation: unipolar |
auf Bestellung 433 Stücke: Lieferzeit 14-21 Tag (e) |
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BYW80-200G | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220-2 Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220-2 Max. load current: 16A Heatsink thickness: 1.15...1.39mm |
auf Bestellung 1978 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W |
auf Bestellung 9955 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.3V/μs Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
auf Bestellung 2225 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGAF40N60UFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 40W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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MC78LC30NTRG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 60mV Output voltage: 3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4...12V Manufacturer series: MC78LC00 |
Produkt ist nicht verfügbar |
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MC78LC33NTRG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.053V Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
auf Bestellung 3564 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP53-10T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP53-16T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: SO16-W Mounting: SMD Topology: buck Number of channels: 1 Kind of package: reel; tape |
auf Bestellung 474 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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BC856BDW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.3W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC245ADWG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.93 EUR |
| 91+ | 0.79 EUR |
| 133+ | 0.54 EUR |
| 141+ | 0.51 EUR |
| MC74HC245ADWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| MM74HC245AMTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 60+ | 1.21 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| MM74HC245AMTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Produkt ist nicht verfügbar
| MM74HC245ASJ |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Produkt ist nicht verfügbar
| MM74HC245AWM |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Manufacturer series: HC
Kind of integrated circuit: bidirectional; transceiver
Case: SO20-W
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Manufacturer series: HC
Kind of integrated circuit: bidirectional; transceiver
Case: SO20-W
Supply voltage: 2...6V DC
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| MM74HC245AWMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Produkt ist nicht verfügbar
| 1N4448WS |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
auf Bestellung 3550 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1605+ | 0.045 EUR |
| 1855+ | 0.039 EUR |
| 2105+ | 0.034 EUR |
| 2255+ | 0.032 EUR |
| 2385+ | 0.03 EUR |
| BD13910S |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
| BD13910STU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 93+ | 0.77 EUR |
| 105+ | 0.68 EUR |
| 161+ | 0.44 EUR |
| 171+ | 0.42 EUR |
| 540+ | 0.4 EUR |
| BD13916S |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
| BD13916STU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 106+ | 0.67 EUR |
| 173+ | 0.41 EUR |
| 183+ | 0.39 EUR |
| BD139G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.27 EUR |
| 71+ | 1 EUR |
| 2N7000-D26Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.44 EUR |
| 200+ | 0.36 EUR |
| 275+ | 0.26 EUR |
| 317+ | 0.23 EUR |
| 481+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| 2N7000-D74Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 2N7000-D75Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 211+ | 0.34 EUR |
| 281+ | 0.25 EUR |
| 363+ | 0.2 EUR |
| 486+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| 2N7000BU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 2N7000TA |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
auf Bestellung 1430 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 220+ | 0.33 EUR |
| 302+ | 0.24 EUR |
| 391+ | 0.18 EUR |
| 506+ | 0.14 EUR |
| 532+ | 0.13 EUR |
| BS170 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 10958 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 237+ | 0.3 EUR |
| 313+ | 0.23 EUR |
| 432+ | 0.17 EUR |
| 575+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BS170-D74Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BS170-D75Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1957 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 203+ | 0.35 EUR |
| 290+ | 0.25 EUR |
| 341+ | 0.21 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| BS170-D26Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2461 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 201+ | 0.36 EUR |
| 341+ | 0.21 EUR |
| 435+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| BS170-D27Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 225+ | 0.32 EUR |
| 410+ | 0.18 EUR |
| 510+ | 0.14 EUR |
| 595+ | 0.12 EUR |
| 630+ | 0.11 EUR |
| BC807-40LT1G | |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 651 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 651+ | 0.11 EUR |
| BC807-40LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| CAT24C08C4ATR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
| CAT24C08C4CTR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
| CAT24C08C5ATR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
| BD14010STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Mounting: THT
Collector-emitter voltage: 80V
Current gain: 63...160
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Case: TO126ISO
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Mounting: THT
Collector-emitter voltage: 80V
Current gain: 63...160
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Case: TO126ISO
Produkt ist nicht verfügbar
| BD14016S |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
| BD14016STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 100...250
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 100...250
Kind of package: tube
Produkt ist nicht verfügbar
| BD140G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Mounting: THT
Collector-emitter voltage: 80V
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Mounting: THT
Collector-emitter voltage: 80V
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Case: TO225
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 93+ | 0.78 EUR |
| 117+ | 0.61 EUR |
| 131+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| MMBD1401 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 209+ | 0.34 EUR |
| 302+ | 0.24 EUR |
| 465+ | 0.15 EUR |
| 565+ | 0.13 EUR |
| 964+ | 0.074 EUR |
| 1019+ | 0.07 EUR |
| MMBD1403 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: double series
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: double series
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Produkt ist nicht verfügbar
| MMBD1404 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Type of diode: switching
Mounting: SMD
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Type of diode: switching
Mounting: SMD
Case: SOT23
auf Bestellung 1890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 278+ | 0.26 EUR |
| 447+ | 0.16 EUR |
| 555+ | 0.13 EUR |
| 993+ | 0.072 EUR |
| 1049+ | 0.068 EUR |
| MMBD1404A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common cathode; double
Load current: 0.6A
Max. forward voltage: 1.25V
Max. off-state voltage: 175V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common cathode; double
Load current: 0.6A
Max. forward voltage: 1.25V
Max. off-state voltage: 175V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Produkt ist nicht verfügbar
| MMBD1405 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Load current: 0.2A
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 298+ | 0.24 EUR |
| 466+ | 0.15 EUR |
| 567+ | 0.13 EUR |
| 740+ | 0.097 EUR |
| MMBD1405A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Load current: 0.6A
Max. forward voltage: 1.25V
Max. off-state voltage: 175V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 600mA; 50ns; SOT23; Ufmax: 1.25V; 350mW
Mounting: SMD
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Load current: 0.6A
Max. forward voltage: 1.25V
Max. off-state voltage: 175V
Capacitance: 2pF
Kind of package: reel; tape
Case: SOT23
Produkt ist nicht verfügbar
| 2N3904BU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 2934 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 253+ | 0.28 EUR |
| 559+ | 0.13 EUR |
| 1112+ | 0.064 EUR |
| 1174+ | 0.061 EUR |
| 2N3904TFR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...300
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...300
Mounting: THT
Frequency: 300MHz
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 404+ | 0.18 EUR |
| 474+ | 0.15 EUR |
| 679+ | 0.11 EUR |
| 1112+ | 0.064 EUR |
| 1174+ | 0.061 EUR |
| BSS138L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 216+ | 0.33 EUR |
| 266+ | 0.27 EUR |
| 378+ | 0.19 EUR |
| 658+ | 0.11 EUR |
| 1146+ | 0.062 EUR |
| 1212+ | 0.059 EUR |
| BSS138LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 246+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 344+ | 0.21 EUR |
| 432+ | 0.17 EUR |
| 493+ | 0.15 EUR |
| 1155+ | 0.062 EUR |
| 1223+ | 0.058 EUR |
| BSS138LT3G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 243+ | 0.29 EUR |
| 311+ | 0.23 EUR |
| 412+ | 0.17 EUR |
| 640+ | 0.11 EUR |
| BSS138W |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 193+ | 0.37 EUR |
| 281+ | 0.25 EUR |
| 350+ | 0.2 EUR |
| MMBFJ113 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Kind of package: reel; tape
Gate-source voltage: -35V
Mounting: SMD
Case: SOT23
Gate current: 50mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Kind of package: reel; tape
Gate-source voltage: -35V
Mounting: SMD
Case: SOT23
Gate current: 50mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 188+ | 0.38 EUR |
| 243+ | 0.29 EUR |
| 404+ | 0.18 EUR |
| 433+ | 0.17 EUR |
| BYW80-200G | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220-2
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220-2
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220-2
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220-2
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
auf Bestellung 1978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.3 EUR |
| 59+ | 1.23 EUR |
| 72+ | 1 EUR |
| 83+ | 0.86 EUR |
| 88+ | 0.82 EUR |
| 1N4448TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
auf Bestellung 9955 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 878+ | 0.082 EUR |
| 1316+ | 0.054 EUR |
| 2110+ | 0.034 EUR |
| 2632+ | 0.027 EUR |
| 3125+ | 0.023 EUR |
| 3497+ | 0.02 EUR |
| 4348+ | 0.016 EUR |
| LM2904DR2G | |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 2225 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 179+ | 0.4 EUR |
| 219+ | 0.33 EUR |
| 325+ | 0.22 EUR |
| 477+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| FGH40N60SFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| FGH40N60SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| FGH40N60UFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.19 EUR |
| 13+ | 5.56 EUR |
| 17+ | 4.23 EUR |
| 18+ | 4 EUR |
| FGAF40N60UFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| MC78LC30NTRG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 60mV
Output voltage: 3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4...12V
Manufacturer series: MC78LC00
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 60mV
Output voltage: 3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4...12V
Manufacturer series: MC78LC00
Produkt ist nicht verfügbar
| MC78LC33NTRG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.053V
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.053V
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 3564 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.4 EUR |
| 136+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 178+ | 0.4 EUR |
| 189+ | 0.38 EUR |
| BCP53-10T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| BCP53-16T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.69 EUR |
| 156+ | 0.46 EUR |
| 194+ | 0.37 EUR |
| 363+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| LM2574DW-ADJR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.09 EUR |
| 40+ | 1.83 EUR |
| 42+ | 1.73 EUR |
| 250+ | 1.64 EUR |
| LM2574N-5G | |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.26 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.8 EUR |
| 46+ | 1.57 EUR |
| 49+ | 1.49 EUR |
| LM2574N-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.51 EUR |
| BC856BDW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 278+ | 0.26 EUR |
| 424+ | 0.17 EUR |
| 867+ | 0.083 EUR |
| 1140+ | 0.063 EUR |