Produkte > NVT
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NVT0402S160J270TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0402S300M420TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S110S180TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S130S220TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S160J270TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S160L270TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S160Q270TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S260Q270TRF | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S260Q330TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S300N420TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S6R7S120TRF | auf Bestellung 68500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT0603S6R7T120TRF | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT12000 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 12kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 12kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT12000 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 12kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 12kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NVT16000M | OHAUS | OHS-NVT16000M Warehouse Devices | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT1601M | OHAUS | OHS-NVT1601M Warehouse Devices | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GM | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2001GM,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GM,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GM,115 | NXP Semiconductors | Translation - Voltage Levels INTERFACE IC | auf Bestellung 4949 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT2001GM,115 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GM,115 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | auf Bestellung 9918 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2001GM,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | auf Bestellung 460205 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2001GMZ | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GMZ | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GMZ | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2001GMZ | NXP Semiconductors | Translation - Voltage Levels Bidirectional voltage level translator for open-drain and push-pull applications | auf Bestellung 2715 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002DP | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2002DP,118 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | auf Bestellung 8469 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2002DP,118 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002DP,118 | NXP | Description: NXP - NVT2002DP,118 - Spannungspegelumsetzer, bidirektional, 2 Eingänge, 1V-5.5V Versorgung, 1.5ns Verzögerung, TSSOP-8 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: TSSOP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 2Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 21346 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2002DP,118 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2002DP,118 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 9617 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002DP,118 | NXP Semiconductors | Translation - Voltage Levels Interface IC | auf Bestellung 71868 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002DP,118 | NXP | Description: NXP - NVT2002DP,118 - Spannungspegelumsetzer, bidirektional, 2 Eingänge, 1V-5.5V Versorgung, 1.5ns Verzögerung, TSSOP-8 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: TSSOP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 8Pin(s) productTraceability: No Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 2Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 21346 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2002DP,118 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2002DP,118 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002DP,118 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GD | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2002GD,125 | NXP Semiconductors | Translation - Voltage Levels BIDIRCTIONL VOLT-LVL TRANSL O-DRN P-P AP | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GD,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-XSON, SOT996-2 (2x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GD,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-XSON, SOT996-2 (2x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2002GF | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2002GF,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-XSON, SOT1089 (1.35x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GF,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-XSON, SOT1089 (1.35x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002GF,115 | NXP Semiconductors | Voltage Level Translator 8-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002TLH | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin HXSON EP T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2002TLH | NXP USA Inc. | Description: IC TRANSLATOR BIDIR HXSON8U Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Data Rate: 33MHz Supplier Device Package: HXSON8U Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002TLH | NXP | Description: NXP - NVT2002TLH - Spannungspegelumsetzer, bidirektional, 2 Eingänge, 1.5ns, 1V-1.5V Versorgung, XSON-8, -40 bis 85°C tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: XSON hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 2Inputs Betriebstemperatur, max.: 105°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2002TLH | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin HXSON EP T/R | auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2002TLH | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2002TLH | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin HXSON EP T/R | auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2002TLH | NXP USA Inc. | Description: IC TRANSLATOR BIDIR HXSON8U Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Data Rate: 33MHz Supplier Device Package: HXSON8U Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002TLH | NXP Semiconductors | Translation - Voltage Levels Bidirectional voltage level translator for open-drain and push-pull applications | auf Bestellung 3579 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2002TLH | NXP | Description: NXP - NVT2002TLH - Spannungspegelumsetzer, bidirektional, 2 Eingänge, 1.5ns, 1V-1.5V Versorgung, XSON-8, -40 bis 85°C tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: XSON hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 2Inputs Betriebstemperatur, max.: 105°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2003DP | auf Bestellung 816 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2003DP,118 | NXP Semiconductors | Voltage Level Translator 3-CH Bidirectional 10-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2003DP,118 | NXP Semiconductors | Voltage Level Translator 3-CH Bidirectional 10-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2003DP,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 10TSSOP Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 3 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2003DP,118 | NXP Semiconductors | Translation - Voltage Levels BI VOLT-LVL TRANSL O-DRN P-P APP | auf Bestellung 66792 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2003DP,118 | NXP | Description: NXP - NVT2003DP,118 - Bidirektionaler Spannungspegelumsetzer, 3 Eingänge, 1.5ns, 1.8V bis 5.5V, TSSOP-10 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: TSSOP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 10Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 3Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 9033 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2003DP,118 | NXP Semiconductors | Voltage Level Translator 3-CH Bidirectional 10-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2003DP,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 10TSSOP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 3 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 29334 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2003DP,118 | NXP | Description: NXP - NVT2003DP,118 - Bidirektionaler Spannungspegelumsetzer, 3 Eingänge, 1.5ns, 1.8V bis 5.5V, TSSOP-10 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: TSSOP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 10Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 3Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 9033 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2004TL | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2004TL,115 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 12HXSON Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 12-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: DFN2514-12 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2004TL,115 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 12HXSON Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 12-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: DFN2514-12 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2004TL,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin HXSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2006BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ,115 | NXP | Description: NXP - NVT2006BQ,115 - Bidirektionaler Spannungspegelumsetzer, 6 Eingänge, 1.5ns, 1.8V bis 5.5V, DHVQFN-16 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: DHVQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 6Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin DHVQFN EP T/R | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16DHVQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-DHVQFN (2.5x3.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 2293 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin DHVQFN EP T/R | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin DHVQFN EP T/R | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16DHVQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-DHVQFN (2.5x3.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ,115 | NXP | Description: NXP - NVT2006BQ,115 - Bidirektionaler Spannungspegelumsetzer, 6 Eingänge, 1.5ns, 1.8V bis 5.5V, DHVQFN-16 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: DHVQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 6Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BQ,115 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: DHVQFN16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ,115 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: DHVQFN16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BQ,115 | NXP Semiconductors | Translation - Voltage Levels BI VOLT-LVL TRANS OPEN-DRAIN P-P APP | auf Bestellung 3119 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006BS | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2006BS,118 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: HVQFN16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull Anzahl je Verpackung: 6000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | auf Bestellung 3823 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006BS,118 | NXP | Description: NXP - NVT2006BS,118 - Bidirektionaler Spannungspegelumsetzer, 6 Eingänge, 1.5ns, 1.8V bis 5.5V, HVQFN-16 tariffCode: 85423190 rohsCompliant: YES Bauform - Logikbaustein: HVQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 6Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 1739 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | auf Bestellung 6416 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006BS,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16HVQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-HVQFN (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Last Time Buy Number of Circuits: 1 | auf Bestellung 6274 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006BS,118 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: HVQFN16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BS,118 | NXP Semiconductors | Translation - Voltage Levels BI VOLT-LVL TRANS OPEN-DRAIN P-P APP | auf Bestellung 4973 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BS,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16HVQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-HVQFN (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Last Time Buy Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006BS,118 | NXP | Description: NXP - NVT2006BS,118 - Bidirektionaler Spannungspegelumsetzer, 6 Eingänge, 1.5ns, 1.8V bis 5.5V, HVQFN-16 tariffCode: 85423190 rohsCompliant: YES Bauform - Logikbaustein: HVQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 6Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 1739 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2006BS,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin HVQFN EP T/R | auf Bestellung 6416 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006BSHP | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16DHVQFN Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-DHVQFN (2.5x3.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006PW | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2006PW,118 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006PW,118 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 2.1-5V | auf Bestellung 29616 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16TSSOP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 18948 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006PW,118 | NXP/Nexperia/We-En | Стандартна логіка; Uживл, В = 1,0...3,6; 1,8...5,5; К-сть. л.е./тип л. е. = 1 6-канальний двонапрямлений транслятор; Тип виходу = з відкритим стоком; 2-тактний; Тексп, °С = -40...+85; TSSOP-16 | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin TSSOP T/R | auf Bestellung 2187 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin TSSOP T/R | auf Bestellung 2187 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2006PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2006PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006PW,118 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 6 Delay time: 1.5ns Kind of output: open drain; push-pull Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2006PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 16-Pin TSSOP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008BQ | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2008BQ,115 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: DHVQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 8 Delay time: 1.5ns Kind of output: open drain; push-pull Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin DHVQFN EP T/R | auf Bestellung 3074 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin DHVQFN EP T/R | auf Bestellung 1392 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 20DHVQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 20-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 20-DHVQFN (4.5x2.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 21429 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2008BQ,115 | NXP | Category: Level translators Description: IC: digital; bidirectional,logic level voltage translator; SMD Type of integrated circuit: digital Mounting: SMD Case: DHVQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Supply voltage: 1...3.6V DC; 1.8...5.5V DC Manufacturer series: NVT Number of inputs: 8 Delay time: 1.5ns Kind of output: open drain; push-pull | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008BQ,115 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 1-5.5V | auf Bestellung 58077 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2008BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 20DHVQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 20-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 20-DHVQFN (4.5x2.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2008BQ,115 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin DHVQFN EP T/R | auf Bestellung 3074 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008PW | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2008PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008PW,118 | NXP | NVT2008PW.118 Level translators | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin TSSOP T/R | auf Bestellung 9903 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008PW,118 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 1-5.5V | auf Bestellung 27748 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2008PW,118 Produktcode: 189102 | IC > IC Logik | Produkt ist nicht verfügbar | ||||||||||||||||||||
NVT2008PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin TSSOP T/R | auf Bestellung 599 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 20TSSOP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 20-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 3597 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2008PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2008PW,118 | NXP Semiconductors | Voltage Level Translator 8-CH Bidirectional 20-Pin TSSOP T/R | auf Bestellung 599 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2008PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 20TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 20-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010BQ,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 24DHVQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 24-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-DHVQFN (5.5x3.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 10 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | auf Bestellung 2183 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010BQ,118 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010BQ,118 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 1-5.5V | auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT2010BS,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 24HVQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 24-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-HVQFN (4x4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 10 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 31476 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010BS,115 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin HVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010BS,115 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 1-5.5V | auf Bestellung 26673 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010BS,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 24HVQFN Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-HVQFN (4x4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 10 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010BS,115 | NXP | NVT2010BS.115 Level translators | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010BS,115 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin HVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010BS,115 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin HVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010BS,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR VOLT 24HVQFN | auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT2010PW | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT2010PW,118 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin TSSOP T/R | auf Bestellung 1912 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2010PW,118 | NXP Semiconductors | Translation - Voltage Levels +/-50mA 1.5ns 1-5.5V | auf Bestellung 11817 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010PW,118 | NXP | Description: NXP - NVT2010PW,118 - Bidirektionaler Spannungspegelumsetzer, 10 Eingänge, 1.5ns, 1.8V bis 5.5V, TSSOP-24 tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V euEccn: NLR Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 24Pins productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 10Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2010PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 24TSSOP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 10 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 7362 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010PW,118 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin TSSOP T/R | auf Bestellung 1912 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2010PW,118 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010PW,118 | NXP | Description: NXP - NVT2010PW,118 - Bidirektionaler Spannungspegelumsetzer, 10 Eingänge, 1.5ns, 1.8V bis 5.5V, TSSOP-24 tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: -A usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V euEccn: NLR Ausbreitungsverzögerung: 1.5ns Anzahl der Pins: 24Pins productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 5.5V Anzahl der Eingänge: 10Inputs Betriebstemperatur, max.: 85°C | auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT2010PW,118 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 24TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 10 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT2010PW,118 | NXP Semiconductors | Voltage Level Translator 10-CH Bidirectional 24-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2010PW,118 Produktcode: 163785 | IC > IC Netzteile | Produkt ist nicht verfügbar | ||||||||||||||||||||
NVT2010PW,118 | NXP | NVT2010PW.118 Level translators | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210CDM3R2G | ON Semiconductor | Temp Sensor Digital Serial (2-Wire) Automotive 8-Pin Micro T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210CDM3R2G | ON Semiconductor | Board Mount Temperature Sensors TEMP SENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210CDM3R2G | ON Semiconductor | Description: SENSOR DIGITAL -40C-125C MICRO8 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT210CDM3R2G | ON Semiconductor | Temp Sensor Digital Serial (2-Wire) Automotive 8-Pin Micro T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210CMTR2G | ON Semiconductor | Board Mount Temperature Sensors REMOTE THERMAL SENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210CMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: -20°C ~ 110°C Accuracy - Highest (Lowest): ±2.5°C Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT210CMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: -20°C ~ 110°C Accuracy - Highest (Lowest): ±2.5°C Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT210DDM3R2G | Rochester Electronics, LLC | Description: DIGITAL TEMPERATURE SENSOR WITH | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT210DDM3R2G | ON Semiconductor | Temp Sensor Digital Serial (2-Wire) Automotive 8-Pin Micro T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210DDM3R2G | ONSEMI | Description: ONSEMI - NVT210DDM3R2G - Temperatursensor-IC, Open-Drain, ± 1°C, -40 °C, 125 °C, MSOP, 8 Pin(s) tariffCode: 85423190 rohsCompliant: YES Erfassungsgenauigkeit: 1C IC-Ausgang: Open-Drain hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Versorgungsspannung, min.: 2.8V Bauform - Sensor: MSOP euEccn: NLR Erfassungstemperatur, min.: -40°C Erfassungstemperatur, max.: 125°C Qualifizierungsstandard der Automobilindustrie: AEC-Q100 Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Versorgungsspannung, max.: 3.6V SVHC: No SVHC (14-Jun-2023) | auf Bestellung 23925 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT210DDM3R2G | ON Semiconductor | Board Mount Temperature Sensors TEMP SENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210DMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Packaging: Tape & Reel (TR) Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: -20°C ~ 110°C Accuracy - Highest (Lowest): ±2.5°C Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT210DMTR2G | ONSEMI | Description: ONSEMI - NVT210DMTR2G - Temperatursensor-IC, Open-Drain, ± 1°C, -40 °C, 125 °C, WDFN, 8 Pin(s) tariffCode: 85423190 rohsCompliant: YES Erfassungsgenauigkeit: 1C IC-Ausgang: Open-Drain hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Versorgungsspannung, min.: 2.8V Bauform - Sensor: WDFN euEccn: NLR Erfassungstemperatur, min.: -40°C Erfassungstemperatur, max.: 125°C Qualifizierungsstandard der Automobilindustrie: AEC-Q100 Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Versorgungsspannung, max.: 3.6V SVHC: No SVHC (14-Jun-2023) | auf Bestellung 251938 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT210DMTR2G | ON Semiconductor | Board Mount Temperature Sensors REMOTE THERMAL SENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211CMTR2G | onsemi | Board Mount Temperature Sensors REMOTE THERMALSENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211CMTR2G | ON Semiconductor | Temp Sensor Digital Serial (2-Wire) Automotive 8-Pin WDFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211CMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Packaging: Cut Tape (CT) Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: 0°C ~ 70°C (-20°C ~ 110°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT211CMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Packaging: Tape & Reel (TR) Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: 0°C ~ 70°C (-20°C ~ 110°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211DMTR2G | onsemi | Board Mount Temperature Sensors REMOTE THERMALSENSOR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211DMTR2G | ON Semiconductor | Temp Sensor Digital Serial (2-Wire) Automotive 8-Pin WDFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT211DMTR2G | onsemi | Description: SENSOR DIGITAL -40C-125C 8WDFN Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: 0°C ~ 70°C (-20°C ~ 110°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2200 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 2.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 2.2kg Scale pan dimension: 230x174mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT2200 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 2.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 2.2kg Scale pan dimension: 230x174mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NVT22000 | OHAUS | OHS-NVT22000 Warehouse Devices | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT2201 | OHAUS | OHS-NVT2201 Warehouse Devices | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT224RQR2G | ON Semiconductor | Description: IC REMOTE THERMAL SENSOR QSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT27023121 | auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT27023135 | auf Bestellung 68 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT31323873 | auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT31323915 | auf Bestellung 17820 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NVT4201 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 4.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 0.1g Scale load capacity max.: 4.2kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt Anzahl je Verpackung: 1 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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NVT4201 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 4.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 0.1g Scale load capacity max.: 4.2kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT4555UKZ | NXP Semiconductors | Voltage Level Translator 12-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4555UKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA Mounting Type: Surface Mount Voltage - Supply: 1.1V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4555UKZ | NXP Semiconductors | Translation - Voltage Levels Interface translator SIM card w I2C | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4555UKZ | NXP Semiconductors | Voltage Level Translator Bidirectional 12-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4555UKZ | NXP Semiconductors | Voltage Level Translator 12-Pin WLCSP T/R | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4555UKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Cut Tape (CT) Package / Case: 12-UFBGA Mounting Type: Surface Mount Voltage - Supply: 1.1V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) | auf Bestellung 1759 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4556AUK012 | NXP USA Inc. | Description: SIM CARD INTERFACE LEVEL TRANSLA Packaging: Bulk DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4556AUKZ | NXP Semiconductors | SIM CARD INTERFACE LEVEL TRANSLATOR WITH I2C-BUS CONTROL AND LDO | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4556AUKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Tape & Reel (TR) Package / Case: 12-XFBGA Mounting Type: Surface Mount Interface: I2C Voltage - Supply: 1.55V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4556AUKZ | NXP Semiconductors | Translation - Voltage Levels Interface translator SIM card w I2C | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4556AUKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Cut Tape (CT) Package / Case: 12-XFBGA Mounting Type: Surface Mount Interface: I2C Voltage - Supply: 1.55V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) | auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4556BUKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Cut Tape (CT) Package / Case: 12-XFBGA Mounting Type: Surface Mount Interface: I2C Voltage - Supply: 1.55V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) Part Status: Obsolete | auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4556BUKZ | NXP Semiconductors | Translation - Voltage Levels Interface translator SIM card w I2C | auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVT4556BUKZ | NXP Semiconductors | Voltage Level Translator 12-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4556BUKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 12WLCSP Packaging: Tape & Reel (TR) Package / Case: 12-XFBGA Mounting Type: Surface Mount Interface: I2C Voltage - Supply: 1.55V ~ 3.6V Applications: SIM Card Supplier Device Package: 12-WLCSP (1.20x1.60) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4557HKX | NXP Semiconductors | Translation - Voltage Levels SIM card interface level translator and supply voltage without LDO | auf Bestellung 15990 Stücke: Lieferzeit 519-523 Tag (e) |
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NVT4557HKX | NXP USA Inc. | Description: SIM CARD INTERFACE LEVEL TRANSLA Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Mounting Type: Surface Mount Voltage - Supply: 1.08V ~ 1.95V, 1.65V ~ 3.6V Applications: Modems, Mobile Phones, SIM Card Supplier Device Package: 10-XQFN (1.4x1.8) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4557HKX | NXP USA Inc. | Description: SIM CARD INTERFACE LEVEL TRANSLA Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Mounting Type: Surface Mount Voltage - Supply: 1.08V ~ 1.95V, 1.65V ~ 3.6V Applications: Modems, Mobile Phones, SIM Card Supplier Device Package: 10-XQFN (1.4x1.8) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4557UKAZ | NXP Semiconductors | Translation - Voltage Levels SIM card interface level translator and supply voltage without LDO | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4558-4858-EVB | NXP Semiconductors | Other Development Tools NVT4558-4858-EVB | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4558-4858-EVB | NXP USA Inc. | Description: NVT4558HK EVAL BOARD Packaging: Box Function: Transceiver Type: Interface Utilized IC / Part: NVT4558, NVT4858 Supplied Contents: Board(s) Embedded: No Contents: Board(s) | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4558HKX | NXP USA Inc. | Description: IC SIM CARD LEVEL TRANS XQFN10 Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 10MHz Supplier Device Package: 10-XQFN (1.4x1.8) Channel Type: Bidirectional Translator Type: Voltage Level Voltage - VCCA: 1.08 V ~ 1.98 V Voltage - VCCB: 1.62 V ~ 3.6 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4558HKX | NXP USA Inc. | Description: IC SIM CARD LEVEL TRANS XQFN10 Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 10MHz Supplier Device Package: 10-XQFN (1.4x1.8) Channel Type: Bidirectional Translator Type: Voltage Level Voltage - VCCA: 1.08 V ~ 1.98 V Voltage - VCCB: 1.62 V ~ 3.6 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4558HKX | NXP Semiconductors | Translation - Voltage Levels 1.2V SIM card interface level translator and supply voltage without LDO | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKAZ | NXP USA Inc. | Description: IC INTFACE SPECIALIZED 20WLCSP Packaging: Tape & Reel (TR) Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply: 1.1V ~ 3.6V Applications: Memory Card Supplier Device Package: 20-WLCSP (2.1x1.7) Part Status: Active | auf Bestellung 39685 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4857UKAZ | NXP Semiconductors | Voltage Level Translator 20-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKAZ | NXP Semiconductors | Translation - Voltage Levels SD 3.0-SDR104 compliant integrated auto-direction control memory card with EMI filter and ESD protection | auf Bestellung 11199 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4857UKAZ | NXP | Description: NXP - NVT4857UKAZ - Spannungspegelumsetzer, bidirektional, 4 Eingänge, 2.9V bis 3.6V, 100mA, 3ns, WLCSP-20 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: WLCSP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: 100mA MSL: MSL 3 - 168 Stunden usEccn: EAR99 Betriebstemperatur, min.: 0 Versorgungsspannung, min.: 2.9V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: 0 Ausbreitungsverzögerung: 3ns Anzahl der Pins: 20Pin(s) Produktpalette: 0 productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 0 Anzahl der Eingänge: 4Inputs Betriebstemperatur, max.: 0 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 14644 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4857UKAZ | NXP Semiconductors | Voltage Level Translator 20-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKAZ | NXP USA Inc. | Description: IC INTFACE SPECIALIZED 20WLCSP Packaging: Cut Tape (CT) Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply: 1.1V ~ 3.6V Applications: Memory Card Supplier Device Package: 20-WLCSP (2.1x1.7) Part Status: Active | auf Bestellung 42435 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4857UKAZ | NXP | Description: NXP - NVT4857UKAZ - Spannungspegelumsetzer, bidirektional, 4 Eingänge, 2.9V bis 3.6V, 100mA, 3ns, WLCSP-20 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: WLCSP hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: 100mA MSL: MSL 3 - 168 Stunden usEccn: EAR99 Betriebstemperatur, min.: 0 Versorgungsspannung, min.: 2.9V Logiktyp: Bidirektionaler Spannungspegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: 0 Ausbreitungsverzögerung: 3ns Anzahl der Pins: 20Pin(s) Produktpalette: 0 productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 0 Anzahl der Eingänge: 4Inputs Betriebstemperatur, max.: 0 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 14644 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4857UKZ | NXP Semiconductors | SD 3.0-SDR104 compliant integrated auto-direction control memory card voltage level translator with EMI filter and ESD protection | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKZ | NXP USA Inc. | Description: IC INTERFACE SPECIALIZED 20WLCSP Packaging: Tape & Reel (TR) Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply: 1.1V ~ 3.6V Applications: Memory Card Supplier Device Package: 20-WLCSP | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKZ | NXP Semiconductors | SD 3.0-SDR104 compliant integrated auto-direction control memory card voltage level translator with EMI filter and ESD protection | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4857UKZ | NXP Semiconductors | Translation - Voltage Levels BL SECURE INTERFACES & POWER | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4858-4557-EVB | NXP | Description: NXP - NVT4858-4557-EVB - Referenzdesign-Board, INN3879C-H801, USB-Power-Delivery (PD)-Controller, Power-Management tariffCode: 84733020 Prozessorkern: NVT4858, NVT4557 Kit-Anwendungsbereich: Schnittstelle productTraceability: No rohsCompliant: YES Prozessorhersteller: NXP Lieferumfang des Kits: Evaluationsboard NVT4858, NVT4557 euEccn: NLR Unterart Anwendung: Spannungspegelumsetzer hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: PW Series SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4858-4557-EVB | NXP Semiconductors | Other Development Tools Evalaution board for NVT4857 and NVT4858 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4858-4557-EVB | NXP USA Inc. | Description: NVT4858 EVAL BOARD Packaging: Box Function: Level Shifter Type: Interface Contents: Board(s) Utilized IC / Part: NVT4557, NVT4858 Supplied Contents: Board(s) Embedded: No Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4858HKZ | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 16XQFN Packaging: Cut Tape (CT) Package / Case: 16-XFQFN Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 104Mbps Supplier Device Package: 16-XQFN (1.8x2.6) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1.08 V ~ 1.95 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 | auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4858HKZ | NXP Semiconductors | Translation - Voltage Levels SD 3.0-SDR104 compliant integrated auto-direction control memory card with EMI filter and ESD protection without LDO | auf Bestellung 7959 Stücke: Lieferzeit 130-134 Tag (e) |
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NVT4858HKZ | NXP | Description: NXP - NVT4858HKZ - Pegelumsetzer, 4 Eingänge, 1.08V bis 1.98V, xQFN-16 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: XQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.08V Logiktyp: Pegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: - Anzahl der Pins: 16Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 1.98V Anzahl der Eingänge: 4Inputs Betriebstemperatur, max.: 85°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4240 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4858HKZ | NXP Semiconductors | Voltage Level Translator 6-CH Bidirectional 16-Pin XQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4858HKZ | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 16XQFN Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 104Mbps Supplier Device Package: 16-XQFN (1.8x2.6) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1.08 V ~ 1.95 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4858HKZ | NXP | Description: NXP - NVT4858HKZ - Pegelumsetzer, 4 Eingänge, 1.08V bis 1.98V, xQFN-16 tariffCode: 85423990 rohsCompliant: YES Bauform - Logikbaustein: XQFN hazardous: false rohsPhthalatesCompliant: YES Ausgangsstrom: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.08V Logiktyp: Pegelumsetzer euEccn: NLR Qualifizierungsstandard der Automobilindustrie: - Ausbreitungsverzögerung: - Anzahl der Pins: 16Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 1.98V Anzahl der Eingänge: 4Inputs Betriebstemperatur, max.: 85°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4240 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVT4858UKZ | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16WLCSP Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 104Mbps Supplier Device Package: 16-WLCSP (1.84x1.87) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1.08 V ~ 1.95 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4858UKZ | NXP Semiconductors | Translation - Voltage Levels SD 3.0-SDR104 compliant integrated auto-direction control memory card with EMI filter and ESD protection without LDO | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVT4858UKZ | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 16WLCSP Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLCSP Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 104Mbps Supplier Device Package: 16-WLCSP (1.84x1.87) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 1.08 V ~ 1.95 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT4858UKZ | NXP Semiconductors | Voltage Level Translator 6-CH Bidirectional T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVT6200 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 6.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 6.2kg Scale pan dimension: 230x174mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NVT6200 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 6.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 1g Scale load capacity max.: 6.2kg Scale pan dimension: 230x174mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT6201 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 6.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 0.1g Scale load capacity max.: 6.2kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NVT6201 | OHAUS | Category: Warehouse Devices Description: Scales; electronic,counting,precision; Scale max.load: 6.2kg Manufacturer series: Navigator Kind of display used: LCD Power supply: battery LR14 C 1,5V x4 Interface: Ethernet (option); RS232 (option); USB (option) Standard equipment: power supply Operating temperature: 10...40°C Illumination: yes Connectors for the country: Europe Readout graduation: 0.1g Scale load capacity max.: 6.2kg Scale pan dimension: 230x174mm Body dimensions: 240x250x74mm Supply voltage: 230V AC Max. environment humidity: 85% Kind of scales: counting; electronic; precision Legalization certificate: no Battery/ rechargeable battery: none Type of device: scales Battery life: ~270h Measuring unit: ct; dwt; g; grn; kg; lb; lb:oz; N; oz; ozt | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NVT6400M | OHAUS | OHS-NVT6400M Warehouse Devices | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTA7002NT1G | ON Semiconductor | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTA7002NT1G | onsemi | MOSFETs NFET SC75 30V 154MA 7OHM | auf Bestellung 835856 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTA7002NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.154A Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTA7002NT1G | ONSEMI | Description: ONSEMI - NVTA7002NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 154 mA, 1.4 ohm, SC-75, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 154mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SC-75 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTA7002NT1G | onsemi | Description: MOSFET N-CH 30V 154MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V Qualification: AEC-Q101 | auf Bestellung 8270 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTA7002NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.154A Automotive 3-Pin SOT-416 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTA7002NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.154A Automotive 3-Pin SOT-416 T/R | auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTA7002NT1G | ONSEMI | Description: ONSEMI - NVTA7002NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 154 mA, 1.4 ohm, SC-75, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 154mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SC-75 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTA7002NT1G | onsemi | Description: MOSFET N-CH 30V 154MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTC040N120M3S | ON Semiconductor | NVTC040N120M3S | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTE4151PT1G | onsemi | Description: MOSFET P-CH 20V 0.76A SC-89 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTE4151PT1G | ON Semiconductor | MOSFET PFET SC89 760MA 20V TR | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS002N04CLTAG | onsemi | MOSFETs 40V 2.2 mOhm 142A Single N-Channel | auf Bestellung 1459 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS002N04CLTAG | ON Semiconductor | auf Bestellung 1390 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS002N04CLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 28A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS002N04CTAG | onsemi | MOSFET 40V 2.4 mOhms 136A Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS002N04CTAG | ON Semiconductor | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS003N04CTAG | ONSEMI | Description: ONSEMI - NVTFS003N04CTAG - Leistungs-MOSFET, n-Kanal, 40 V, 103 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 103A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (14-Jun-2023) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS003N04CTAG | ON Semiconductor | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS003N04CTAG | onsemi | Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS003N04CTAG | ONSEMI | Description: ONSEMI - NVTFS003N04CTAG - Leistungs-MOSFET, n-Kanal, 40 V, 103 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 103A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (14-Jun-2023) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS003N04CTAG | onsemi | MOSFET Single N-Chn Pwr Mosfet 40V | auf Bestellung 6045 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS003N04CTAG | onsemi | Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS003N04CTAG | ON Semiconductor | Trans MOSFET N-CH 40V 22A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS004N04CTAG | onsemi | MOSFETs Single N-Chn Pwr Mosfet 40V | auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS004N04CTAG | onsemi | Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS004N04CTAG | ON Semiconductor | Trans MOSFET N-CH 40V 18A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS004N04CTAG | onsemi | Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS005N04CTAG | onsemi | Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS005N04CTAG | ON Semiconductor | Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS005N04CTAG | onsemi | Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS005N04CTAG | onsemi | Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS005N04CTAG | onsemi | MOSFET T6 40V SG NCH U8FL | auf Bestellung 5259 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS008N04CTAG | onsemi | Description: MOSFET N-CH 40V 14A/48A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS008N04CTAG | onsemi | Description: MOSFET N-CH 40V 14A/48A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS010N10MCLTAG | onsemi | Description: MOSFET N-CH 100V 11.7A/57.8 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 7172 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS010N10MCLTAG | onsemi | MOSFETs PTNG 100V LL IN | auf Bestellung 40723 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS010N10MCLTAG | onsemi | Description: MOSFET N-CH 100V 11.7A/57.8 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 7172 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS010N10MCLTAG | ON Semiconductor | Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS014P04M8LTAG | ON Semiconductor | MOSFET MV8 P INITIAL PROGRAM | auf Bestellung 5259 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS014P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFS014P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 49 A, 0.01 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 61W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS014P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 11.3A/49A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS014P04M8LTAG | ON Semiconductor | Trans MOSFET P-CH 40V 11.3A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 31500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS014P04M8LTAG | onsemi | MOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm, -49 A | auf Bestellung 9315 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS014P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFS014P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 49 A, 0.01 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 61W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS014P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 11.3A/49A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2691 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS015N04CTAG | onsemi | Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS015N04CTAG | onsemi | MOSFETs Single N-Chn Pwr Mosfet 40V | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS015N04CTAG | onsemi | Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS015N04CTAG | ON Semiconductor | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS015N04CTAG | ON Semiconductor | Trans MOSFET N-CH 40V 9.4A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS015P03P8ZTAG | onsemi | Description: PT8P PORTFOLIO EXPANSION Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS015P03P8ZTAG | ON Semiconductor | Power MOSFET, Single P-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS015P03P8ZTAG | onsemi | Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS015P03P8ZTAG | onsemi | MOSFET Power MOSFET, Single, P-Channel, u8FL -30 V, 7.5 mohm, -88.6 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS016N06CTAG | ON Semiconductor | Single N Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS016N06CTAG | onsemi | Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS016N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, 60 V, 16.3 mohm, 32 A | auf Bestellung 6850 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS016N06CTAG | onsemi | Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS020N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS020N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, 60 V, 20.3 mohm, 27 A Active OPN | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS020N06CTAG | ON Semiconductor | auf Bestellung 1380 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS020N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS020N06CTAG | ON Semiconductor | Power MOSFET, Single, N Channel, 8FL, 60 V, 20.3 m, 27 A Active OPN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS024N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 25500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS024N06CTAG | ON Semiconductor | Single N Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS024N06CTAG | ONSEMI | Description: ONSEMI - NVTFS024N06CTAG - POWER MOSFET, SINGLE, N-CHANNEL, µ8FL, MSL: MSL 1 - unbegrenzt SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS024N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, | auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS024N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 26990 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS027N10MCLTAG | onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm | auf Bestellung 8427 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS027N10MCLTAG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS027N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 34500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS027N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 35404 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS030N06CTAG | onsemi | Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS030N06CTAG | onsemi | Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS030N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, 60 V, 29.7 mohm, 19 A | auf Bestellung 1500 Stücke: Lieferzeit 122-126 Tag (e) |
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NVTFS040N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6375 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS040N10MCLTAG | onsemi | MOSFETs PTNG 100V LL U8FL | auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS040N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS040N10MCLTAG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS052P04M8LTAG | onsemi | MOSFETs Power MOSFET, Single P-Channel, -40V, 69mohm, -13.2A | auf Bestellung 8876 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS052P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS052P04M8LTAG | ON Semiconductor | Power, Single P-Channel, -40 V, -13.2 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS052P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS070N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS070N10MCLTAG | ON Semiconductor | N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS070N10MCLTAG | onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 13 A, 64.4 mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS070N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 38805 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4823NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 13A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4823NTAG | ON Semiconductor | MOSFET Single N-Channel 30V,10A,10.5mOhm | auf Bestellung 2473 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4823NTAG | ON Semiconductor | Description: MOSFET N-CH 30V 13A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4823NTAG | ON Semiconductor | Description: MOSFET N-CH 30V 13A 8WDFN | auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4823NTWG | ON Semiconductor | Description: MOSFET N-CH 30V 13A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4823NTWG | ON Semiconductor | MOSFET Single N-Channel 30V,10A,10.5mOhm | auf Bestellung 4518 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4823NWFTAG | ON Semiconductor | Description: MOSFET N-CH 30V 30A U8FL | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4823NWFTAG | ON Semiconductor | MOSFET Pwr MOSFET 30V 30A 10.5mOhm SGL N-CH | auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4823NWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 30V 30A 10.5mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4823NWFTWG | onsemi | Description: MOSFET N-CH 30V 13A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4823NWFTWG | ON Semiconductor | Description: MOSFET N-CH 30V 30A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTAG | ON Semiconductor | MOSFET NFET U8FL 30V 69A 7.5M OHM | auf Bestellung 1112 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4824NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 18.2A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTAG | ON Semiconductor | Description: MOSFET N-CH 30V 18.2A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTWG | ON Semiconductor | MOSFET NFET U8FL 30V 69A 7.5M OHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTWG | ON Semiconductor | Trans MOSFET N-CH 30V 18.2A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTWG | ON Semiconductor | Description: MOSFET N-CH 30V 18.2A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NTWG | ON Semiconductor | Trans MOSFET N-CH 30V 18.2A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NWFTAG | ON Semiconductor | Description: MOSFET N-CH 30V 69A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 18.2A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NWFTAG | ON Semiconductor | MOSFET Pwr MOSFET 30V 46A 4.7mOhm SGL N-CH | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4824NWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 30V 46A 4.7mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4824NWFTWG | ON Semiconductor | Description: MOSFET N-CH 30V 69A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NTAG | ONSEMI | Description: ONSEMI - NVTFS4C02NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 162 A, 0.0019 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C02NTAG | onsemi | Description: MOSFET - SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C02NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 28.3A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NTAG | ONSEMI | Description: ONSEMI - NVTFS4C02NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 162 A, 0.0019 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: WDFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0019ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0019ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C02NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 28.3A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NTAG | onsemi | Description: MOSFET - SINGLE N-CHANNEL POWER, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 11943 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C02NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 28.3A Automotive T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NTAG | onsemi | MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm | auf Bestellung 1079 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C02NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 28.3A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NWFTAG | onsemi | Description: MOSFET - SINGLE N-CHANNEL POWER, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NWFTAG | onsemi | Description: MOSFET - SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C02NWFTAG | onsemi | MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm | auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C05NTAG | onsemi | MOSFET NFET U8FL 30V 75A 3.6MOHM | auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C05NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 22A 8-Pin WDFN EP T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS4C05NTAG | ONSEMI | Description: ONSEMI - NVTFS4C05NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 102 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 102A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C05NTAG | onsemi | Description: MOSFET N-CH 30V 22A/102A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C05NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 22A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C05NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 22A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C05NTAG | onsemi | Description: MOSFET N-CH 30V 22A/102A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C05NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 22A 8-Pin WDFN EP T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS4C05NTAG | ONSEMI | Description: ONSEMI - NVTFS4C05NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 102 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 102A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C05NWFTAG | ON Semiconductor | auf Bestellung 385 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS4C05NWFTAG | ONSEMI | Description: ONSEMI - NVTFS4C05NWFTAG - Leistungs-MOSFET, n-Kanal, 30 V, 102 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 102A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C05NWFTAG | ON Semiconductor | MOSFET NFET U8FL 30V 102 A 3.6MOH | auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C05NWFTAG | ON Semiconductor | Description: MOSFET N-CH 30V 22A U8FL | auf Bestellung 28500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C05NWFTAG | ONSEMI | Description: ONSEMI - NVTFS4C05NWFTAG - Leistungs-MOSFET, n-Kanal, 30 V, 102 A, 0.0029 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 102A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C06NTAG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C06NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTAG | onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 71A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTAG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C06NTWG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTWG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTWG | ON Semiconductor | Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NTWG | onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTAG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTAG | onsemi | MOSFET Single N-Channel Power MOSFET 30V, 71A, 4.2mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTAG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTWG | onsemi | MOSFET Single N-Channel Power MOSFET 30V, 71A, 4.2mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTWG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTWG | ON Semiconductor | Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C06NWFTWG | onsemi | Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTAG | onsemi | Description: MOSFET N-CH 30V 17A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTAG | onsemi | MOSFET Single N-Channel Power MOSFET 30V, 55A, 5.9mohm | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C08NTAG | onsemi | Description: MOSFET N-CH 30V 17A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTWG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTWG | onsemi | MOSFET NFET U8FL 30V 55A 5.9MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTWG | ON Semiconductor | Description: MOSFET N-CH 30V 17A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NTWG | Rochester Electronics, LLC | Description: POWER FIELD-EFFECT TRANSISTOR, 3 | auf Bestellung 27661 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C08NWFTAG | Rochester Electronics, LLC | Description: POWER FIELD-EFFECT TRANSISTOR, 3 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C08NWFTAG | ON Semiconductor | Description: MOSFET N-CH 30V 17A 8WDFN | auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C08NWFTAG | ON Semiconductor | auf Bestellung 1240 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS4C08NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NWFTAG | onsemi | MOSFET NFET U8FL 30V 55A 5.9MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NWFTWG | ON Semiconductor | Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NWFTWG | Rochester Electronics, LLC | Description: POWER FIELD-EFFECT TRANSISTOR, 3 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NWFTWG | onsemi | MOSFET NFET U8FL 30V 55A 5.9MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C08NWFTWG | ON Semiconductor | Description: MOSFET N-CH 30V 17A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10N | onsemi | onsemi NFET U8FL 30V 44A 7.4MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 15.3A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NTAG | onsemi | Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1460 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C10NTAG | onsemi | MOSFETs NFET U8FL 30V 44A 7.4MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NTAG | onsemi | Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NWFTAG | onsemi | Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NWFTAG | onsemi | MOSFETs NFET U8FL 30V 47A 7.4MOHM | auf Bestellung 1101 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C10NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C10NWFTAG | onsemi | Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C10NWFTAG | ON Semiconductor | Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 14A 8-Pin WDFN EP T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS4C13NTAG | ONSEMI | Description: ONSEMI - NVTFS4C13NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0075 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 26W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C13NTAG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 14A 8-Pin WDFN EP T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS4C13NTAG | ONSEMI | Description: ONSEMI - NVTFS4C13NTAG - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0075 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 26W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS4C13NTAG | onsemi | MOSFET Single N-Channel Power MOSFET 30V, 40A, 9.4mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NTAG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C13NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 14A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NTWG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Cut Tape (CT) | auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C13NTWG | ON Semiconductor | MOSFET NFET U8FL 30V 40A 9.4MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NTWG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NWFTAG | ON Semiconductor | MOSFET NFET U8FL 30V 40A 9.4MOHM | auf Bestellung 4290 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C13NWFTAG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Cut Tape (CT) | auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C13NWFTAG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C13NWFTWG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C13NWFTWG | onsemi | MOSFETs Single N-Channel Power MOSFET 30V, 40A, 9.4mohm | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C13NWFTWG | onsemi | Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C25NTAG | ON Semiconductor | Description: MOSFET N-CH 30V 27A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C25NTAG | onsemi | MOSFETs NFET U8FL 30V 27A 17MOHM | auf Bestellung 17621 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS4C25NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 10.1A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS4C25NWFTAG | ON Semiconductor | auf Bestellung 1140 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS4C25NWFTAG | ON Semiconductor | Description: MOSFET N-CH 30V 10.1A U8FL | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS4C25NWFTAG | ON Semiconductor | MOSFET NFET U8FL 30V 22A 17MOHM | auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5116PL | onsemi | onsemi PFET U8FL 60V 14A 52MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLTAG | onsemi | MOSFETs Single P-Channel 60V,14A,52mohm | auf Bestellung 13493 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLTAG | ONSEMI | Description: ONSEMI - NVTFS5116PLTAG - Leistungs-MOSFET, p-Kanal, 60 V, 6 A, 0.037 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 5681 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 2390 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | ONSEMI | Description: ONSEMI - NVTFS5116PLTAG - Leistungs-MOSFET, p-Kanal, 60 V, 6 A, 0.037 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 5681 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5116PLTAG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6071 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTAG | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1495 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTFS5116PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 2390 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTWG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 12677 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTWG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLTWG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTWG | ONSEMI | Description: ONSEMI - NVTFS5116PLTWG - Leistungs-MOSFET, p-Kanal, 60 V, 14 A, 0.037 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 21W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm | auf Bestellung 4745 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5116PLTWG | onsemi | MOSFETs Single P-Channel 60V,14A,52mohm | auf Bestellung 4010 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLTWG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLTWG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLTWG | ONSEMI | Description: ONSEMI - NVTFS5116PLTWG - Leistungs-MOSFET, p-Kanal, 60 V, 14 A, 0.037 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 21W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 4692 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5116PLWFTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTAG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1232 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTAG | onsemi | MOSFETs Pwr MOSFET 60V 14A 52mOhm SGL P-CH | auf Bestellung 1634 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTAG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTAG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTWG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 14982 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTWG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTWG | onsemi | Description: MOSFET P-CH 60V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5116PLWFTWG | ON Semiconductor | Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5116PLWFTWG | onsemi | MOSFETs Pwr MOSFET 60V 14A 52mOhm SGL P-CH | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLTAG | ONSEMI | Description: ONSEMI - NVTFS5124PLTAG - Leistungs-MOSFET, p-Kanal, 60 V, 2.4 A, 0.2 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.2ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5124PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLTAG | onsemi | MOSFETs Single P-Channel Power MOSFET -60V, -8A, 260mohm | auf Bestellung 29917 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLTAG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2835 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLTAG | ON Semiconductor | Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLTAG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLTWG | onsemi | MOSFETs Power MOSFET -60V -8A 260 mOhm Single P-Channel u8FL Logic Level | auf Bestellung 94686 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLTWG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLTWG | ON Semiconductor | Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLTWG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1052 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLWFTAG | ON Semiconductor | Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLWFTAG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLWFTAG | onsemi | MOSFETs Pwr MOSFET 60V 8A 260mOhm SGL P-CH | auf Bestellung 34839 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLWFTAG | onsemi | Description: MOSFET P-CH 60V 2.4A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5124PLWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 60V 8A 260mOhm SGL P-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5124PLWFTWG | ON Semiconductor | Description: MOSFET P-CH 60V 8A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLTAG | ON Semiconductor | Description: MOSFET N-CH 40V 40A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLTAG | ON Semiconductor | Description: MOSFET N-CH 40V 40A 8WDFN | auf Bestellung 1266 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5811NLTAG | ON Semiconductor | MOSFET Single N-Channel 40V,40A,6.5mOhm | auf Bestellung 8061 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5811NLTWG | ON Semiconductor | Trans MOSFET N-CH 40V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLTWG | ON Semiconductor | Description: MOSFET N-CH 40V 40A 8WDFN | auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5811NLTWG | ON Semiconductor | MOSFET Single N-Channel 40V,40A,6.5mOhm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 40V 40A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLWFTAG | ON Semiconductor | MOSFET Pwr MOSFET 40V 40A 6.7mOhm SGL N-CH | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5811NLWFTWG | ON Semiconductor | Trans MOSFET N-CH 40V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLWFTWG | ON Semiconductor | Description: MOSFET N-CH 40V 40A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5811NLWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 40V 40A 6.7mOhm SGL N-CH | auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5820NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 37A 8WDFN | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5820NLTAG | ON Semiconductor | MOSFET Single N-Channel 60V,29A,11.5mohm | auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5820NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 37A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLTWG | ON Semiconductor | Description: MOSFET N-CH 60V 37A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLTWG | ON Semiconductor | MOSFET Single N-Channel 60V,29A,11.5mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLTWG | ON Semiconductor | Description: MOSFET N-CH 60V 37A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTAG | ON Semiconductor | MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 60V 37A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTWG | ON Semiconductor | Description: MOSFET N-CH 60V 37A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTWG | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTWG | onsemi | Description: MOSFET N-CH 60V 11A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5820NLWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5824NLTAG | ON Semiconductor | MOSFET NFET U8FL 60V 20A 25 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLTAG-ON | onsemi | Description: POWER FIELD-EFFECT TRANSISTOR | auf Bestellung 18870 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5824NLTWG | ON Semiconductor | MOSFET NFET U8FL 60V 20A 25 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5824NLTWG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTAG | onsemi | Description: MOSFET N-CH 60V 20A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTAG | ON Semiconductor | MOSFET NFET U8FL 60V 20A 25 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTWG | ON Semiconductor | MOSFET NFET U8FL 60V 20A 25 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTWG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5824NLWFTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 20A 8WDFN | auf Bestellung 25500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | auf Bestellung 775 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 20A 8WDFN | auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLTAG | ON Semiconductor | MOSFET Single N-Channel 60V,20A,24mohm | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | Description: MOSFET N-CH 60V 20A 8WDFN | auf Bestellung 3159 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | Description: MOSFET N-CH 60V 20A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | MOSFET Single N-Channel 60V,20A,24mohm | auf Bestellung 3812 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | auf Bestellung 7177 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5826NLWFTAG | ON Semiconductor | MOSFET Pwr MOSFET 60V 20A 24mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5826NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTWG | ON Semiconductor | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTWG | ON Semiconductor | MOSFET Pwr MOSFET 60V 20A 24mOhm SGL N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5826NLWFTWG | ON Semiconductor | Description: MOSFET N-CH 60V 20A U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C453NLTAG | onsemi | MOSFETs T6 40VNCH LL IN U8FL | auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C453NLTAG | onsemi | Description: MOSFET N-CH 40V 107A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C453NLTAG | onsemi | Description: MOSFET N-CH 40V 107A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C453NLWFTAG | onsemi | Description: MOSFET N-CH 40V 107A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 37395 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C453NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C453NLWFTAG - Leistungs-MOSFET, n-Kanal, 40 V, 107 A, 0.0026 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 107A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 16500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C453NLWFTAG | onsemi | Description: MOSFET N-CH 40V 107A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C453NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C453NLWFTAG - MOSFET, N-CH, 40V, 107A, 175DEG C, 68W Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 107 Qualifikation: AEC-Q101 Verlustleistung Pd: 68 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 68 Bauform - Transistor: WDFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: N Channel Kanaltyp: N Channel Betriebswiderstand, Rds(on): 0.0026 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0026 SVHC: Lead | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C453NLWFTAG | onsemi | MOSFETs T6 40VNCH LL IN U8FL WF | auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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NVTFS5C453NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C453NLWFTAG - Leistungs-MOSFET, n-Kanal, 40 V, 107 A, 0.0026 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 107A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 16500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C454NLTAG | onsemi | Description: MOSFET N-CHANNEL 40V 85A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1479 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C454NLTAG | onsemi | MOSFETs T6 40VNCH LL IN U8FL | auf Bestellung 1291 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C454NLTAG | onsemi | Description: MOSFET N-CHANNEL 40V 85A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C454NLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 20A Automotive 8-Pin WDFN EP T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C454NLWFTAG | ON Semiconductor | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS5C454NLWFTAG | onsemi | MOSFETs T6 40VNCH LL IN U8FL WF | auf Bestellung 4555 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C454NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 20A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C454NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C454NLWFTAG - Leistungs-MOSFET, n-Kanal, 40 V, 85 A, 0.0033 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 85A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 55W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C454NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 20A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C454NLWFTAG | onsemi | Description: MOSFET N-CHANNEL 40V 85A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 617 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C454NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 20A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C454NLWFTAG | onsemi | Description: MOSFET N-CHANNEL 40V 85A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C460NLWFTAG | onsemi | MOSFETs Single N-Chn Pwr Mosfet 40V | auf Bestellung 1460 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C466NLTAG | ONSEMI | Description: ONSEMI - NVTFS5C466NLTAG - Leistungs-MOSFET, n-Kanal, 40 V, 51 A, 0.0061 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 51A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 38W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0061ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4495 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C466NLTAG | onsemi | Description: MOSFET N-CH 40V 51A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLTAG | ON Semiconductor | MOSFET AFSM T6 40V LL U8FL | auf Bestellung 4379 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C466NLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLTAG | onsemi | Description: MOSFET N-CH 40V 51A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C466NLWFTAG | ON Semiconductor | auf Bestellung 1180 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS5C466NLWFTAG | ON Semiconductor | MOSFET AFSM T6 40V LL U8FL WF | auf Bestellung 1522 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C471NLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 12A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLTAG | onsemi | Description: MOSFET N-CHANNEL 40V 41A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLTAG | onsemi | MOSFET AFSM T6 40V LL U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLTAG | onsemi | Description: MOSFET N-CHANNEL 40V 41A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLWFTAG | onsemi | MOSFETs AFSM T6 40V LL U8FL WF | auf Bestellung 1770 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C471NLWFTAG | ON Semiconductor | Description: MOSFET N-CHANNEL 40V 41A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLWFTAG | ON Semiconductor | auf Bestellung 1460 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS5C471NLWFTAG | ON Semiconductor | Description: MOSFET N-CHANNEL 40V 41A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C471NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 40V 12A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C478NLTAG | ON Semiconductor | MOSFET AFSM T6 40V LL U8FL | auf Bestellung 1001 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C478NLTAG | ON Semiconductor | Description: MOSFET N-CHANNEL 40V 26A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C478NLTAG | ON Semiconductor | auf Bestellung 1420 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS5C478NLWFTAG | ON Semiconductor | MOSFET AFSM T6 40V LL U8FL WF | auf Bestellung 479 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C478NLWFTAG | ON Semiconductor | Description: MOSFET N-CHANNEL 40V 26A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C478NLWFTAG | onsemi | MOSFETs AFSM T6 40V LL U8FL WF | auf Bestellung 8500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C478NLWFTAG | ON Semiconductor | Description: MOSFET N-CHANNEL 40V 26A 8WDFN | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C658NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 109A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C658NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 18A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C658NLTAG | ON Semiconductor | MOSFET AFSM T6 60V LL U8FL | auf Bestellung 634 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C658NLTAG | ON Semiconductor | Description: MOSFET N-CH 60V 109A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C658NLTAG | ONSEMI | Description: ONSEMI - NVTFS5C658NLTAG - Leistungs-MOSFET, n-Kanal, 60 V, 109 A, 0.0042 ohm, WDFN, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 109 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 114 Bauform - Transistor: WDFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0042 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2.2 SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C658NLWFTAG | ON Semiconductor | MOSFET AFSM T6 60V LL U8FL WF | auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C658NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C658NLWFTAG - Leistungs-MOSFET, n-Kanal, 60 V, 109 A, 0.0042 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 109A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 114W Bauform - Transistor: WDFN Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1435 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C658NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 18A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C670NLTAG | onsemi | Description: MOSFET N-CH 60V 16A/70A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 25268 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C670NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C670NLTAG | onsemi | MOSFET T6 60V NCH LL U8FL | auf Bestellung 3035 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C670NLTAG | onsemi | Description: MOSFET N-CH 60V 16A/70A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C670NLTAG | ONSEMI | Description: ONSEMI - NVTFS5C670NLTAG - Leistungs-MOSFET, n-Kanal, 60 V, 70 A, 0.0056 ohm, WDFN, Oberflächenmontage tariffCode: 85413000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 63W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C670NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 16A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C670NLWFTAG | onsemi | MOSFETs T6 60V NCH LL U8FL WF | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C670NLWFTAG | onsemi | Description: MOSFET N-CH 60V 16A/70A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C670NLWFTAG | onsemi | Description: MOSFET N-CH 60V 16A/70A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C673NLTAG | onsemi | Description: MOSFET N-CH 60V 13A/50A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C673NLTAG | onsemi | Description: MOSFET N-CH 60V 13A/50A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2559 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C673NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 13A Automotive 8-Pin WDFN EP T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C673NLTAG | ON Semiconductor | Trans MOSFET N-CH 60V 13A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C673NLTAG | onsemi | MOSFETs T6 60V NCH LL U8FL | auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C673NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C673NLWFTAG - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0081 ohm, WDFN, Oberflächenmontage tariffCode: 85413000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 46W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0081ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C673NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 13A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C673NLWFTAG | ON Semiconductor | Trans MOSFET N-CH 60V 13A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C673NLWFTAG | onsemi | MOSFET T6 60V NCH LL U8FL WF | auf Bestellung 19500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS5C673NLWFTAG | onsemi | Description: MOSFET N-CH 60V 13A/50A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C673NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C673NLWFTAG - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0081 ohm, WDFN, Oberflächenmontage tariffCode: 85413000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 46W Bauform - Transistor: WDFN Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0081ohm | auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS5C673NLWFTAG | onsemi | Description: MOSFET N-CH 60V 13A/50A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C680NLTAG | onsemi | Description: MOSFET N-CH 60V 7.82A/20A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C680NLTAG | onsemi | Description: MOSFET N-CH 60V 7.82A/20A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS5C680NLTAG | onsemi | MOSFET AFSM T6 60V LL U8FL | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C680NLWFTAG | onsemi | MOSFET AFSM T6 60V LL U8FL WF | auf Bestellung 1500 Stücke: Lieferzeit 319-323 Tag (e) |
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NVTFS5C680NLWFTAG | ONSEMI | Description: ONSEMI - NVTFS5C680NLWFTAG - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.022 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 20W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H850NLTAG | ON Semiconductor | MOSFET T8 80V LL U8FL | auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H850NLTAG | ON Semiconductor | Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H850NLWFTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H850NLWFTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H850NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H850NTAG | ONSEMI | Description: ONSEMI - NVTFS6H850NTAG - Leistungs-MOSFET, n-Kanal, 80 V, 68 A, 0.0085 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0085ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3160 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H850NTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H850NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H850NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H850NTAG | onsemi | MOSFET TRENCH 8 80V NFET | auf Bestellung 5790 Stücke: Lieferzeit 608-612 Tag (e) |
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NVTFS6H850NTAG | ONSEMI | Description: ONSEMI - NVTFS6H850NTAG - Leistungs-MOSFET, n-Kanal, 80 V, 68 A, 0.0085 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0085ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H850NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H850NTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 2230 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H850NWFTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H850NWFTAG | ON Semiconductor | MOSFET TRENCH 8 80V NFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H850NWFTAG | onsemi | Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H854NLTAG | ON Semiconductor | Description: MOSFET N-CH 80V 8WDFN | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H854NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 80V 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 9.5A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NTAG | ONSEMI | Description: ONSEMI - NVTFS6H854NTAG - Leistungs-MOSFET, n-Kanal, 80 V, 44 A, 0.0119 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 68W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: WDFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0119ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0119ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H854NTAG | onsemi | Description: MOSFET N-CH 80V 9.5A/44A 8WDFN Packaging: Cut Tape (CT) | auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H854NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 9.5A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NTAG | onsemi | MOSFET TRENCH 8 80V NFET | auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H854NTAG | onsemi | Description: MOSFET N-CH 80V 9.5A/44A 8WDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NWFTAG | onsemi | Description: MOSFET N-CH 80V 9.5A/44A 8WDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NWFTAG | ON Semiconductor | Trans MOSFET N-CH 80V 9.5A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H854NWFTAG | ON Semiconductor | MOSFET TRENCH 8 80V NFET | auf Bestellung 1130 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H854NWFTAG | onsemi | Description: MOSFET N-CH 80V 9.5A/44A 8WDFN Packaging: Cut Tape (CT) | auf Bestellung 1175 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H860NLTAG | ON Semiconductor | MOSFET T8 80V LL U8FL | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H860NLTAG | ON Semiconductor | Description: MOSFET - POWER, SINGLE N-CHANNEL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H860NLTAG | onsemi | MOSFETs MOSFET - Power, Single N-Channel, 80 V, 20 mohm 30 A - NVTFS6H860NL WDFN8 (Pb-Free) | auf Bestellung 17097 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H860NLWFTAG | ON Semiconductor | Description: MOSFET - POWER, SINGLE N-CHANNEL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H860NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 8A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H860NTAG | onsemi | MOSFET TRENCH 8 80V NFET | auf Bestellung 2996 Stücke: Lieferzeit 826-830 Tag (e) |
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NVTFS6H860NTAG | ON Semiconductor | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS6H860NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 8A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H860NWFTAG | ON Semiconductor | Trans MOSFET N-CH 80V 8A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H860NWFTAG | ON Semiconductor | MOSFET TRENCH 8 80V NFET | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H880NLWFTAG | ON Semiconductor | auf Bestellung 1480 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS6H880NLWFTAG | ON Semiconductor | MOSFET Power, Single N Channel, 80 V, 29 m, 22 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H880NLWFTAG | ON Semiconductor | MOSFET T6 40V SG NCH U8FL | auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H880NLWFTAG | ON Semiconductor | Description: MOSFET - POWER, SINGLE N-CHANNEL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H880NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 6.3A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H880NTAG | onsemi | MOSFET T8 80V U8FL | auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NTAG | ON Semiconductor | Description: MOSFET N-CH 80V 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H880NTAG | ON Semiconductor | auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS6H880NWFTAG | onsemi | MOSFETs T8 80V U8FL | auf Bestellung 5725 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NWFTAG | ON Semiconductor | MOSFET T8 80V U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H880NWFTAG | ON Semiconductor | Trans MOSFET N-CH 80V 6.3A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NLTAG | ONSEMI | Description: ONSEMI - NVTFS6H888NLTAG - Leistungs-MOSFET, n-Kanal, 80 V, 14 A, 0.041 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 23W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1032 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H888NLTAG | onsemi | Description: MOSFET N-CH 80V 4.9A/14A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NLTAG | ONSEMI | Description: ONSEMI - NVTFS6H888NLTAG - Leistungs-MOSFET, n-Kanal, 80 V, 14 A, 0.041 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 23W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1052 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H888NLTAG | onsemi | Description: MOSFET N-CH 80V 4.9A/14A 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NLWFTAG | ON Semiconductor | Description: MOSFET N-CH 80V 8WDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NTAG | ON Semiconductor | Description: MOSFET N-CH 80V 4.7A/12A 8WDFN | auf Bestellung 9370 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H888NTAG | ON Semiconductor | auf Bestellung 1445 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTFS6H888NTAG | ONSEMI | Description: ONSEMI - NVTFS6H888NTAG - Leistungs-MOSFET, n-Kanal, 80 V, 12 A, 0.0457 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 18W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0457ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H888NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 4.7A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H888NTAG | ON Semiconductor | Description: MOSFET N-CH 80V 4.7A/12A 8WDFN | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFS6H888NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 4.7A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NTAG | ONSEMI | Description: ONSEMI - NVTFS6H888NTAG - Leistungs-MOSFET, n-Kanal, 80 V, 12 A, 0.0457 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 18W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 18W Bauform - Transistor: WDFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0457ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0457ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS6H888NTAG | ON Semiconductor | Trans MOSFET N-CH 80V 4.7A Automotive AEC-Q101 8-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS6H888NTAG | onsemi | MOSFET T8 80V U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NWFTAG | onsemi | Description: MOSFET N-CH 80V 4.7A/12A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NWFTAG | ON Semiconductor | MOSFET T8 80V U8FL | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS6H888NWFTAG | onsemi | Description: MOSFET N-CH 80V 4.7A/12A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS8D1N08HTAG | onsemi | Description: MOSFET N-CHANNEL 80V 61A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS8D1N08HTAG | onsemi | Description: MOSFET N-CHANNEL 80V 61A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8L | onsemi | Description: MOSFET P-CH 20V 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8L | onsemi | onsemi | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFS9D6P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 0.0075 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS9D6P04M8LTAG | ON Semiconductor | Trans MOSFET P-CH 40V 13A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 13A/64A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 18874 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS9D6P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFS9D6P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 0.0075 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFS9D6P04M8LTAG | ON Semiconductor | Trans MOSFET P-CH 40V 13A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8LTAG | ON Semiconductor | Trans MOSFET P-CH 40V 13A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFS9D6P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 13A/64A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 18874 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS9D6P04M8LTAG | onsemi | MOSFET MV8 P INITIAL PROGRAM | auf Bestellung 3076 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS002N04CLTAG | ON Semiconductor | Trans MOSFET N-CH 40V 28A Automotive AEC-Q101 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS002N04CLTAG | onsemi | MOSFET 40V 2.0 Ohm 142A Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS002N04CLTAG | onsemi | Description: MOSFET N-CH 40V 28A/142A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS002N04CLTAG | onsemi | Description: MOSFET N-CH 40V 28A/142A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS002N04CTAG | onsemi | Description: MOSFET N-CH 40V 27A/136A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS002N04CTAG | onsemi | Description: MOSFET N-CH 40V 27A/136A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS002N04CTAG | ON Semiconductor | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS002N04CTAG | onsemi | MOSFET 40V 2.4 Ohm 136A Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS003N04CTAG | onsemi | Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS003N04CTAG | ON Semiconductor | Trans MOSFET N-CH 40V 22A Automotive 8-Pin WDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS003N04CTAG | onsemi | MOSFET Single N-Chn Pwr Mosfet 40V | auf Bestellung 1500 Stücke: Lieferzeit 658-662 Tag (e) |
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NVTFWS003N04CTAG | ONSEMI | Description: ONSEMI - NVTFWS003N04CTAG - Leistungs-MOSFET, n-Kanal, 40 V, 103 A, 0.0035 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 103 hazardous: false Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5 euEccn: NLR Verlustleistung: 69 Bauform - Transistor: WDFN Anzahl der Pins: 8 Produktpalette: - Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0035 SVHC: Lead (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS003N04CTAG | onsemi | Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS004N04CTAG | onsemi | MOSFETs Single N-Chn Pwr Mosfet 40V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS004N04CTAG | onsemi | Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS004N04CTAG | onsemi | Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS005N04CTAG | onsemi | Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS005N04CTAG | onsemi | Description: MOSFET N-CH 40V 17A/69A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS005N04CTAG | onsemi | MOSFET T6 40V SG NCH U8FL | auf Bestellung 1500 Stücke: Lieferzeit 399-403 Tag (e) |
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NVTFWS005N08XLTAG | onsemi | MOSFETs T10S 80V LL NCH MOSFET U8FL HE WF | auf Bestellung 1500 Stücke: Lieferzeit 374-378 Tag (e) |
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NVTFWS005N08XLTAG | onsemi | Description: T10S 80V LL NCH MOSFET U8FL HE W Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS005N08XLTAG | onsemi | Description: T10S 80V LL NCH MOSFET U8FL HE W Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS005N08XLTAG | onsemi | Description: T10S 80V LL NCH MOSFET U8FL HE W Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS008N04CTAG | onsemi | Description: MOSFET N-CH 40V 14A/48A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS008N04CTAG | onsemi | Description: MOSFET N-CH 40V 14A/48A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS008N04CTAG | onsemi | MOSFET T6 40V SG NCH U8FL | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | onsemi | Description: MOSFET N-CH 100V 11.7A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | onsemi | MOSFETs PTNG 100V LL IN | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | onsemi | Description: MOSFET N-CH 100V 11.7A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS010N10MCLTAG | ON Semiconductor | Trans MOSFET N-CH 100V 11.7A Automotive 8-Pin WDFN EP Reel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS014P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFWS014P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 49 A, 0.01 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 61W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFWS014P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 11.3A/49A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2047 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS014P04M8LTAG | onsemi | MOSFET MV8 P INITIAL PROGRAM | auf Bestellung 7080 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS014P04M8LTAG | ONSEMI | Description: ONSEMI - NVTFWS014P04M8LTAG - Leistungs-MOSFET, p-Kanal, 40 V, 49 A, 0.01 ohm, WDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 61W Bauform - Transistor: WDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1315 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTFWS014P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 11.3A/49A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS014P04M8LTAG | ON Semiconductor | MOSFET Power MOSFET, Single P-Channel, -40 V, 13.8 mO, -49 A | auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFWS015N04CTAG | onsemi | Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS015N04CTAG | onsemi | MOSFETs Single N-Chn Pwr Mosfet 40V | auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS015N04CTAG | onsemi | Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS015P03P8ZTAG | onsemi | Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS015P03P8ZTAG | onsemi | MOSFETs Power MOSFET, Single, P-Channel, u8FL -30 V, 7.5 mohm, -88.6 A Wettable Option | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS015P03P8ZTAG | onsemi | Description: PT8P PORTFOLIO EXPANSION Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS016N06CTAG | onsemi | Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS016N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, 60 V, 16.3 mohm, 32 A (Pb-Free, Wettable Flanks) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS016N06CTAG | onsemi | Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS020N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS020N06CTAG | ON Semiconductor | Power MOSFET, Single, N Channel, 8FL, 60 V, 20.3 m, 27 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS020N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS020N06CTAG | ON Semiconductor | MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS024N06CTAG | ONSEMI | Description: ONSEMI - NVTFWS024N06CTAG - POWER MOSFET, SINGLE, N-CHANNEL, µ8FL, MSL: MSL 1 - unbegrenzt SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS024N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS024N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS024N06CTAG | onsemi | Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS027N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS027N10MCLTAG | onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS027N10MCLTAG | ON Semiconductor | Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS027N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS027N10MCLTAG | ON Semiconductor | Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS030N06CTAG | ON Semiconductor | Power MOSFET, Single, N Channel, 8FL, 60 V, 29.7 m, 19 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS030N06CTAG | onsemi | Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS030N06CTAG | onsemi | MOSFETs Power MOSFET, Single, N-Channel, u8FL, 60 V, 29.7 mohm, 19 A | auf Bestellung 1500 Stücke: Lieferzeit 122-126 Tag (e) |
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NVTFWS030N06CTAG | onsemi | Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS040N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10269 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS040N10MCLTAG | onsemi | MOSFETs PTNG 100V LL U8FL | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS040N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS052P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS052P04M8LTAG | onsemi | Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS052P04M8LTAG | ON Semiconductor | Power, Single P-Channel, -40 V, -13.2 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS052P04M8LTAG | onsemi | MOSFETs Power MOSFET, Single P-Channel, -40V, 69mohm, -13.2A | auf Bestellung 8930 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS070N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS070N10MCLTAG | onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 13 A, 64.4 mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS070N10MCLTAG | onsemi | Description: PTNG 100V LL U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS8D1N08HTAG | onsemi | Description: 80V T8 IN U8FL HEFET PACK | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTFWS9D6P04M8LTAG | ON Semiconductor | MOSFET MV8 P INITIAL PROGRAM | auf Bestellung 2620 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFWS9D6P04M8LTAG | ON Semiconductor | Description: MOSFET P-CH 40V 13A/64A 8WDFN | auf Bestellung 7339 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFWS9D6P04M8LTAG | ON Semiconductor | Description: MOSFET P-CH 40V 13A/64A 8WDFN | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTFWS9D6P04M8LTAG | onsemi | MOSFET MV8 P INITIAL PROGRAM | auf Bestellung 9375 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTGS3455T1G | ON Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTGS3455T1G | ON Semiconductor | Description: MOSFET N-CH 30V 3.5A 6-TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4001NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.272W | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A Automotive 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4001NT1G | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 330000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTJD4001NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.272W Anzahl je Verpackung: 1 Stücke | auf Bestellung 2910 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTJD4001NT1G | onsemi | MOSFETs NFET 30V 250MA 1.5OH | auf Bestellung 1099592 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTJD4001NT1G | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 331191 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTJD4001NT2G | ON Semiconductor | Description: MOSFET 2N-CH 30V 0.25A SC-88 | auf Bestellung 2733 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTJD4001NT2G | ON Semiconductor | MOSFET NFET 30V 250MA 1.5OH | auf Bestellung 14731 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NVTJD4001NT2G | ON Semiconductor | Description: MOSFET 2N-CH 30V 0.25A SC-88 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4105CT1G | onsemi | Description: MOSFET 20V 0.63A SC-88 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4158CT1G | onsemi | MOSFET PFET 20V .88A 1OHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4158CT1G | ON Semiconductor | Description: MOSFET P-CH 20V 0.88A SC-88 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTJD4401NT1G | ON Semiconductor | Description: MOSFET N-CH 20V 0.63A SC-88 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTP2955G | onsemi | Description: MOSFET 60V 12A 196 Packaging: Tape & Reel (TR) Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTP2955G | onsemi | Description: MOSFET 60V 12A 196 Packaging: Bulk Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 | auf Bestellung 3974 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR01P02L | onsemi | onsemi PFET SOT23 20V 1.3A 0.075 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR01P02LT1G | ON Semiconductor | Trans MOSFET P-CH 20V 1.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR01P02LT1G | onsemi | MOSFET PFET 20V 0.160R TR | auf Bestellung 4033 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR01P02LT1G | onsemi | Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V Qualification: AEC-Q101 | auf Bestellung 6481 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR01P02LT1G | ON Semiconductor | auf Bestellung 2758 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTR01P02LT1G | ON Semiconductor | Trans MOSFET P-CH 20V 1.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR01P02LT1G | onsemi | Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR01P02LT1G | ON Semiconductor | Trans MOSFET P-CH 20V 1.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR0202PLT1G | onsemi | Description: MOSFET P-CH 20V 400MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR0202PLT1G | ON Semiconductor | Trans MOSFET P-CH 20V 0.4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR0202PLT1G | ONSEMI | Description: ONSEMI - NVTR0202PLT1G - Leistungs-MOSFET, p-Kanal, 20 V, 400 mA, 0.55 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.55ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3659 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR0202PLT1G | ONSEMI | NVTR0202PLT1G SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR0202PLT1G | onsemi | MOSFET PFET 20V 0.4A 80MOH | auf Bestellung 33761 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR0202PLT1G | onsemi | Description: MOSFET P-CH 20V 400MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Qualification: AEC-Q101 | auf Bestellung 17777 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR0202PLT1G | ONSEMI | Description: ONSEMI - NVTR0202PLT1G - Leistungs-MOSFET, p-Kanal, 20 V, 400 mA, 0.55 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.55ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3659 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR0202PLT1G | ON Semiconductor | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NVTR4502P | onsemi | PFET SOT23 30V 1.95A 20MO | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4502PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 1.13A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4502PT1G | onsemi | MOSFETs PFET 30V 1.95A 20MO | auf Bestellung 28736 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4502PT1G | onsemi | Description: MOSFET P-CH 30V 1.13A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4502PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 1.13A Automotive 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4502PT1G | ONSEMI | Description: ONSEMI - NVTR4502PT1G - Leistungs-MOSFET, p-Kanal, 30 V, 1.13 A, 0.155 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.155ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4502PT1G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4502PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 1.13A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4502PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 1.13A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4502PT1G | onsemi | Description: MOSFET P-CH 30V 1.13A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4502PT1G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4502PT1G | ONSEMI | Description: ONSEMI - NVTR4502PT1G - Leistungs-MOSFET, p-Kanal, 30 V, 1.13 A, 0.155 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.155ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4502PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 1.13A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4503NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4503NT1G | onsemi | Description: MOSFET N-CH 30V 1.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4503NT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4503NT1G | ONSEMI | Description: ONSEMI - NVTR4503NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.085 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 730mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6796 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4503NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4503NT1G | onsemi | MOSFET NFET SOT23 30V 2A 0.110R | auf Bestellung 188610 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4503NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4503NT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 935 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTR4503NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTR4503NT1G | onsemi | Description: MOSFET N-CH 30V 1.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 13843 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTR4503NT1G | ONSEMI | Description: ONSEMI - NVTR4503NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.085 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 730mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6796 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NVTR4503NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4503NT1G транзистор Produktcode: 199485 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
NVTS4409NT1G | onsemi | Description: MOSFET N-CH 25V/8V 0.075A SC-70 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS002N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS002N03CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS002N03CLTWG | ON Semiconductor | Power MOSFET, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS002N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS003N03CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel LFPAK33 (Pb-Free) | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS003N03CLTWG | ON Semiconductor | Power MOSFET, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CLTWG | onsemi | MOSFET T6 40V N-CH LL IN LFPAK33 PACKAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CLTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CTWG | onsemi | MOSFET T6 40V N-CH SL IN LFPAK33 PACKAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS003N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS004N03CLTWG | onsemi | MOSFETs T6 30V N-CH LL IN LFPAK33 PACKAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N03CLTWG | ON Semiconductor | Power MOSFET, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CLTWG | onsemi | MOSFETs T6 40V N-CH LL IN LFPAK33 PACKAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CLTWG | ON Semiconductor | 40V N-Channel Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS004N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS004N04CTWG | onsemi | MOSFETs T6 40V N-CH SL IN LFPAK33 PACKAGE | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N04CLTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N06CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N06CLTWG | ON Semiconductor | Trans MOSFET N-CH 60V 18A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS005N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS006N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS006N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS006N06CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS007N04CLTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS007N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS007N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS008N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS008N06CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS008N06CLTWG | ON Semiconductor | MOSFET - Power, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS008N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2825 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS010N04CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | auf Bestellung 3000 Stücke: Lieferzeit 108-112 Tag (e) |
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NVTYS010N04CLTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS010N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS010N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2884 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS010N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS010N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS010N04CTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, 40 V, 12 mohm, 38 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS010N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2070 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS010N06CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, 60 V, 9.8 mohm, 51 A | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS010N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS010N06CLTWG | ON Semiconductor | MOSFET - Power, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS013N10MCLTWG | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS014N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS014N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS014N08HLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | auf Bestellung 3000 Stücke: Lieferzeit 115-119 Tag (e) |
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NVTYS014P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS014P04M8LTWG | onsemi | MOSFETs MOSFET - Power, Single, P-Channel, | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS014P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS020N08HLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | auf Bestellung 3000 Stücke: Lieferzeit 129-133 Tag (e) |
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NVTYS020N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS020N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS025P04M8LTWG | ON Semiconductor | Power MOSFET, Single P-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS025P04M8LTWG | onsemi | Description: MV8 40V P-CH LL IN LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 255µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS025P04M8LTWG | onsemi | MOSFET MV8 40V P-CH LL IN LFPAK33 PACKAGE | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS027N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS027N10MCLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS027N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS029N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS029N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 2828 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS029N08HLTWG | onsemi | onsemi T8 80V N-CH LL IN LFPAK33 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS029N08HTWG | onsemi | Description: T8 80V N-CH SG IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS029N08HTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS029N08HTWG | onsemi | Description: T8 80V N-CH SG IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5995 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS040N10MCLTWG | onsemi | MOSFETs PTNG 100V LL, SINGLE NCH, LFPAK33, 40 MOHMS MAX | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS040N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 27µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS040N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 27µA | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS9D6P04M8LTWG | ON Semiconductor | Power MOSFET, Single P-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NVTYS9D6P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 3.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 580µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V | Produkt ist nicht verfügbar |