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NVTFS020N06CTAG onsemi
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.8 EUR |
10+ | 1.49 EUR |
100+ | 1.16 EUR |
500+ | 0.98 EUR |
1000+ | 0.8 EUR |
1500+ | 0.76 EUR |
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Technische Details NVTFS020N06CTAG onsemi
Description: MOSFET N-CH 60V 7A/27A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V.
Weitere Produktangebote NVTFS020N06CTAG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NVTFS020N06CTAG | Hersteller : ON Semiconductor |
auf Bestellung 1380 Stücke: Lieferzeit 21-28 Tag (e) |
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NVTFS020N06CTAG | Hersteller : ON Semiconductor |
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NVTFS020N06CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
Produkt ist nicht verfügbar |
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NVTFS020N06CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 7A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
Produkt ist nicht verfügbar |