NVTFS040N10MCLTAG onsemi
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.44 EUR |
3000+ | 0.41 EUR |
4500+ | 0.39 EUR |
7500+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS040N10MCLTAG onsemi
Description: PTNG 100V LL U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 26µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS040N10MCLTAG nach Preis ab 0.39 EUR bis 1.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NVTFS040N10MCLTAG | Hersteller : onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm |
auf Bestellung 843 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
NVTFS040N10MCLTAG | Hersteller : onsemi |
Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9515 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
NVTFS040N10MCLTAG | Hersteller : ON Semiconductor | Power MOSFET, Single N-Channel |
Produkt ist nicht verfügbar |