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NVTFS5124PLTWG

NVTFS5124PLTWG onsemi

nvtfs5124pl-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 60V 2.4A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 0.99 EUR
100+ 0.69 EUR
500+ 0.57 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 16
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Technische Details NVTFS5124PLTWG onsemi

Description: MOSFET P-CH 60V 2.4A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V, Power Dissipation (Max): 3W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Qualification: AEC-Q101.

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NVTFS5124PLTWG NVTFS5124PLTWG Hersteller : onsemi NVTFS5124PL_D-2319960.pdf MOSFETs Single P-Channel Power MOSFET -60V, -8A, 260mohm
auf Bestellung 94866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.15 EUR
10+ 1 EUR
100+ 0.69 EUR
500+ 0.58 EUR
1000+ 0.44 EUR
5000+ 0.42 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 3
NVTFS5124PLTWG NVTFS5124PLTWG Hersteller : onsemi nvtfs5124pl-d.pdf Description: MOSFET P-CH 60V 2.4A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
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