NVTYS005N06CLTWG ON Semiconductor
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Technische Details NVTYS005N06CLTWG ON Semiconductor
Description: T6 60V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.2W (Ta), 76W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 75µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V, Qualification: AEC-Q101.
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NVTYS005N06CLTWG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTYS005N06CLTWG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTYS005N06CLTWG | Hersteller : onsemi |
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Produkt ist nicht verfügbar |