Produkte > MUN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||||
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| MUN 5114T1 | MOT | SOT23 | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN 5215T1 | MOT | SOT23 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN123C01-SGB | Delta Electronics/Cyntec | Description: POL 1A 12VIN DC-DC CONVERTER Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 6-LDFN Module Size / Dimension: 0.15" L x 0.10" W x 0.06" H (3.9mm x 2.6mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 88% Current - Output (Max): 1A Supplier Device Package: 6-DFN (3.9x2.6) Voltage - Input (Min): 4.5V Voltage - Output 1: 3.3V Power (Watts): 3.3 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN123C01-SGB | Delta Electronics/Cyntec | Description: POL 1A 12VIN DC-DC CONVERTER Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 6-LDFN Module Size / Dimension: 0.15" L x 0.10" W x 0.06" H (3.9mm x 2.6mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 88% Current - Output (Max): 1A Supplier Device Package: 6-DFN (3.9x2.6) Voltage - Input (Min): 4.5V Voltage - Output 1: 3.3V Power (Watts): 3.3 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD01-SG | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-6V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 6-LDFN Module Size / Dimension: 0.15" L x 0.10" W x 0.06" H (3.9mm x 2.6mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 94% Current - Output (Max): 1A Supplier Device Package: 6-DFN (3.9x2.6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 6V Number of Outputs: 1 | auf Bestellung 24332 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD01-SG | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-6V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Module Size / Dimension: 0.15" L x 0.10" W x 0.06" H (3.9mm x 2.6mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 94% Current - Output (Max): 1A Supplier Device Package: 6-DFN (3.9x2.6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 6V Number of Outputs: 1 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD01-SG | Delta Electronics | Non-Isolated DC/DC Converters 1A 12Vin inductor-integrated DC-DC converter | auf Bestellung 1184 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD01-SG | Delta Electronics Inc. | Module DC-DC 1-OUT 0.8V to 6V 1A 6-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD01-SG EVB | Delta Electronics/Cyntec | Description: EVAL BOARD FOR MUN12AD01SG Packaging: Box Voltage - Input: 4.5V ~ 16V Current - Output: 1A Board Type: Fully Populated Utilized IC / Part: MUN12AD01-SG Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output Contents: Board(s) | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD01-SG EVB | Delta Electronics | Power Management IC Development Tools Evaluation Board for MUN12AD01-SG | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD01-SH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 1-5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.14" L x 0.14" W x 0.07" H (3.5mm x 3.5mm x 1.7mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 95% Current - Output (Max): 1A Supplier Device Package: 8-QFN (3.5x3.5) Voltage - Input (Min): 4.5V Voltage - Output 1: 1 ~ 5V Part Status: Active Number of Outputs: 1 | auf Bestellung 18589 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD01-SH | Delta Electronics Inc. | MUN12AD01-SH | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD01-SH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 1-5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.14" L x 0.14" W x 0.07" H (3.5mm x 3.5mm x 1.7mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 95% Current - Output (Max): 1A Supplier Device Package: 8-QFN (3.5x3.5) Voltage - Input (Min): 4.5V Voltage - Output 1: 1 ~ 5V Part Status: Active Number of Outputs: 1 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SE | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-5.5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.12" L x 0.11" W x 0.06" H (3.0mm x 2.8mm x 1.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-QFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5.5V Number of Outputs: 1 | auf Bestellung 42383 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SE | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-5.5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.12" L x 0.11" W x 0.06" H (3.0mm x 2.8mm x 1.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-QFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5.5V Number of Outputs: 1 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SEC | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-5.5V Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 8-LDFN Exposed Pad Module Size / Dimension: 0.12" L x 0.11" W x 0.05" H (3.0mm x 2.8mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-DFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 5.5V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 52000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SEC | Delta Electronics | Non-Isolated DC/DC Converters 3A 12Vin inductor-integrated DC-DC converter | auf Bestellung 8848 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SEC | Delta Electronics Inc. | Module DC-DC 1-OUT 0.8V to 5.5V 3A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SEC | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-5.5V Features: Adjustable Output, Remote On/Off Packaging: Cut Tape (CT) Package / Case: 8-LDFN Exposed Pad Module Size / Dimension: 0.12" L x 0.11" W x 0.05" H (3.0mm x 2.8mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-DFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 5.5V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 54301 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SEC | Delta Electronics | Module DC-DC 1-OUT 0.8V to 5.5V 3A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SEC EVB | Delta Electronics/Cyntec | Description: EVAL BOARD FOR MUN12AD03SEC Packaging: Box Voltage - Output: 1V ~ 5V Voltage - Input: 4.5V ~ 17V Current - Output: 3A Contents: Board(s) Frequency - Switching: 1MHz Board Type: Fully Populated Utilized IC / Part: MUN12AD03-SEC Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SEC EVB | Delta Electronics | Power Management IC Development Tools Evaluation Board for MUN12AD03-SEC | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SECM | Delta Electronics | 3A 12Vin inductor-integrated DC-DC converter | auf Bestellung 2000 Stücke: Lieferzeit 178-182 Tag (e) |
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| MUN12AD03-SECM | Delta Electronics/Cyntec | Description: POL 3A 12VIN DC-DC CONVERTER Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 9-PowerLDFN Module Size / Dimension: 0.12" L x 0.11" W x 0.06" H (3.0mm x 2.8mm x 1.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 92% Current - Output (Max): 3A Supplier Device Package: 9-DFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 5.5V Power (Watts): 17 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SECM | Delta Electronics/Cyntec | Description: POL 3A 12VIN DC-DC CONVERTER Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 9-PowerLDFN Module Size / Dimension: 0.12" L x 0.11" W x 0.06" H (3.0mm x 2.8mm x 1.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 17V Efficiency: 92% Current - Output (Max): 3A Supplier Device Package: 9-DFN (3x2.8) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.8 ~ 5.5V Power (Watts): 17 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.14" L x 0.14" W x 0.07" H (3.5mm x 3.5mm x 1.7mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-QFN (3.5x3.5) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5V Number of Outputs: 1 | auf Bestellung 29000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-5V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 8-LQFN Exposed Pad, Module Size / Dimension: 0.14" L x 0.14" W x 0.07" H (3.5mm x 3.5mm x 1.7mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 91% Current - Output (Max): 3A Supplier Device Package: 8-QFN (3.5x3.5) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5V Number of Outputs: 1 | auf Bestellung 29289 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD03-SM | Delta Electronics/Cyntec | Description: POL 3A 12VIN DC-DC CONVERTER Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 25-PowerBQFN Module Size / Dimension: 0.24" L x 0.24" W x 0.13" H (6.0mm x 6.0mm x 3.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 93% Current - Output (Max): 3A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5V Power (Watts): 15 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SM | Delta Electronics Inc. | MUN12AD03-SM | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD03-SM | Delta Electronics/Cyntec | Description: POL 3A 12VIN DC-DC CONVERTER Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 25-PowerBQFN Module Size / Dimension: 0.24" L x 0.24" W x 0.13" H (6.0mm x 6.0mm x 3.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 16V Efficiency: 93% Current - Output (Max): 3A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 5V Power (Watts): 15 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD05-SMFH | Delta Electronics Inc. | Module DC-DC 1-OUT 1.9V to 5V 5A SMD 21-Pin QFN T/ | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN12AD05-SMFH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 1.9-5V Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 20-BQFN Exposed Pad Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 20V Efficiency: 92% Current - Output (Max): 5A Supplier Device Package: 20-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 1.9 ~ 5V Part Status: Active Number of Outputs: 1 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD05-SMFH | Delta Electronics | Non-Isolated DC/DC Converters 5A 12Vin inductor-integrated DC-DC converter | auf Bestellung 729 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD05-SMFH | Delta Electronics/Cyntec | Description: DC DC CONVERTER 1.9-5V Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 20-BQFN Exposed Pad Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 20V Efficiency: 92% Current - Output (Max): 5A Supplier Device Package: 20-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 1.9 ~ 5V Part Status: Active Number of Outputs: 1 | auf Bestellung 4640 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD05-SMFL | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-1.8V Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 20-BQFN Exposed Pad Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 20V Efficiency: 92% Current - Output (Max): 5A Supplier Device Package: 20-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 1.8V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 3716 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD05-SMFL | Delta Electronics | Non-Isolated DC/DC Converters 5A 12Vin inductor-integrated DC-DC converters | auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD05-SMFL | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-1.8V Features: Adjustable Output, Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 20-BQFN Exposed Pad Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 20V Efficiency: 92% Current - Output (Max): 5A Supplier Device Package: 20-QFN (6x6) Voltage - Input (Min): 4.5V Voltage - Output 1: 0.6 ~ 1.8V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD06-SM | Delta Electronics | Non-Isolated DC/DC Converters 6A 12Vin inductor-integrated DC-DC converters | auf Bestellung 1394 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD06-SM | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-6V Packaging: Cut Tape (CT) Features: Remote On/Off, OCP, OTP, OVP, SCP Package / Case: 25-BQFN Exposed Pad, Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 24V Efficiency: 93% Current - Output (Max): 6A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 7V Voltage - Output 1: 0.6 ~ 6V Part Status: Active Number of Outputs: 1 | auf Bestellung 18823 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD06-SM | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-6V Features: Remote On/Off, OCP, OTP, OVP, SCP Packaging: Tape & Reel (TR) Package / Case: 25-BQFN Exposed Pad, Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 24V Efficiency: 93% Current - Output (Max): 6A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 7V Voltage - Output 1: 0.6 ~ 6V Part Status: Active Number of Outputs: 1 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN12AD06-SM | Delta Electronics Inc. | Module DC-DC 1-OUT 0.6V to 15V 6A 25-Pin QFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN20AD03-SM | Delta Electronics Inc. | Module DC-DC 1-OUT 0.6V to 5.5V 3A 25-Pin QFN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2110LT1 | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2110LT1(6L*) | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111 | ON | 06+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2111 | onsemi | SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2111LT1G | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111T1 | ONSEMI | Description: ONSEMI - MUN2111T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 143230 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2111T1 | ON | 99+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2111T1 | Aptina Imaging | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1 | Aptina Imaging | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SC59 Packaging: Bulk | auf Bestellung 143230 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2111T1 | ON | SOT23 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2111T1 | Aptina Imaging | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SC59 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2111T1(6A) | auf Bestellung 53625 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111T1(6A*) | auf Bestellung 462000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2111T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 21269 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 32846 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | Aptina Imaging | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2111T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 5218 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ONSEMI | Description: ONSEMI - MUN2111T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach PNP, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2140 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 573000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T1G/6A | auf Bestellung 45300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111T3 | Aptina Imaging | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2111T3 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2111T3 | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2111T3 | ONSEMI | Description: ONSEMI - MUN2111T3 - MUN2111T3, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2111T3 | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2111T3G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112 | onsemi | onsemi SS SC59 BR XSTR PNP PBFR | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112 | T | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2112/6B | ON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2112LT1 | auf Bestellung 226500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112LT1(6B*) | auf Bestellung 226500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112LT1/A6B | auf Bestellung 800000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112LT1G | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112T1 | ONSEMI | Description: ONSEMI - MUN2112T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2112T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SC-59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2112T1 | MOTOROLA | 04+ SOT23 | auf Bestellung 6100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2112T1(6B*) | auf Bestellung 182980 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112T1/6B | MOTO | auf Bestellung 335600 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2112T1G | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 5848 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2112T1G | onsemi | Digital Transistors SS BR XSTR PNP | auf Bestellung 122024 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112T3 | MOT | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2112T3 | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2112\6B | ON | SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2113 | onsemi | SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113 | ON | 06+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2113-TX | MOTOROLA | 09+ | auf Bestellung 6018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2113LT1 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113LT1(6C*) | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113LT1G | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113T | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SC-59 Packaging: Bulk | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2113T1 | auf Bestellung 1170 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113T1 | onsemi | Digital Transistors 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1 | ONSEMI | Description: ONSEMI - MUN2113T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2113T1(6C*) | auf Bestellung 38835 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | auf Bestellung 23980 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2113T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2113T1G | onsemi | Digital Transistors SS BR XSTR PNP 50V | auf Bestellung 17086 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1G | ONSEMI | Description: ONSEMI - MUN2113T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 14295 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1G | ON Semiconductor | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 36344 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2113T1G | ON | 08+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | auf Bestellung 23980 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2113T1G | ONSEMI | Description: ONSEMI - MUN2113T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 47 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 47kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 14295 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-59 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2113T3 | auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2113XLT1 | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2114 | MOTOROLA | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2114 | onsemi | Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2114-T1 | auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2114LT1 | auf Bestellung 90000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2114T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SC-59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2114T1 | ONSEMI | Description: ONSEMI - MUN2114T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2114T1 | Onsemi | SOT23 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2114T1(6D) | auf Bestellung 3425 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2114T1(6D*) | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2114T1G | ONSEMI | Description: ONSEMI - MUN2114T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 530511 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2114T1G | onsemi | Digital Transistors SS BR XSTR PNP 50V | auf Bestellung 8210 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2114T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 9278 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2114T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2115LT1(6E) | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2115T1 | auf Bestellung 231000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2115T1(6E) | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2115T1/6E | MALAYSIA | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2115T1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2115T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms | auf Bestellung 482700 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2115T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2115T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2115T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2115T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2115T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 11799 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2116LT1 | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2116LT1(6F*) | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2116T1 | ON | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2116T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms | auf Bestellung 360000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2116T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2116T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2116T1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 14930 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2116T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2117LT1 | auf Bestellung 4400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2117LT1(6H*) | auf Bestellung 4400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2119 | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN211ET1(6N) | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN211T1 | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2130T1 | MOT | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2130T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2130T1 | ONSEMI | Description: ONSEMI - MUN2130T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2130T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 20059 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2130T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2130T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2130T1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2131 | onsemi | SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2131T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2131T1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2131T1G | ONSEMI | Description: ONSEMI - MUN2131T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 198000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2131T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2131T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 20812 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2131T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2131T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2131T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 198000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2132 | onsemi | onsemi SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2132LT1 | auf Bestellung 8400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2132T1 | onsemi | Description: TRANS PREBIAS PNP 230MW SC59 | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2132T1 | ONS | 0426+ | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2132T1 | onsemi | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2132T1 | ONSEMI | Description: ONSEMI - MUN2132T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2132T1(6J) | auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2132T1G | onsemi | Description: TRANS PREBIAS PNP 50V 100MA SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2132T1G | onsemi | Digital Transistors SS BR XSTR PNP 50V | auf Bestellung 3322 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2132T1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2132T1G | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR, | auf Bestellung 303000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2132T3 | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2132T3(6J) | auf Bestellung 1735 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2133 | onsemi | onsemi SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133LT1 | auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2133LT1G | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2133T1 | ONSEMI | Description: ONSEMI - MUN2133T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 237000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2133T1 | auf Bestellung 17000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2133T1 | onsemi | Description: TRANS PREBIAS PNP 230MW SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 237000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2133T1 | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133T1 | onsemi | Description: TRANS PREBIAS PNP 230MW SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133T1G | ON | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2133T1G | onsemi | Description: TRANS PREBIAS PNP 50V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133T1G | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2133T1G | onsemi | Description: TRANS PREBIAS PNP 50V 100MA SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2134T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2134T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2134T1G | ON | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2134T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 1934 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2135T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2135T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2136T1G | onsemi | Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP 50V | auf Bestellung 20235 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2136T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2137T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2137T1 | ONSEMI | Description: ONSEMI - MUN2137T1 - TRANS PREBIAS PNP 230MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 693000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2137T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 2979 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2137T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2138T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 230MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2138T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2138T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2140T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2140T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2140T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2140T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2140T1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2141T1G | onsemi | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2141T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 100 kOhms | auf Bestellung 156000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2141T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 156000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2141T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2141T1G | onsemi | Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2141T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2210 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2211 | onsemi | SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211 | MOT | SOT-23 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2211 | MOT | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| mun2211jt1 | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| mun2211jt1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211JT1 | ONSEMI | Description: ONSEMI - MUN2211JT1 - TRANS PREBIAS NPN 2.7W SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| mun2211jt1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211JT1G | ONSEMI | Description: ONSEMI - MUN2211JT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 222000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211JT1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211JT1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211JT1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211JT1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211LT1G | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2211T1 | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T1 | ON | 04+ SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2211T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 96997 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T1 | ONSEMI | Description: ONSEMI - MUN2211T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 96997 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T1 | ON | SOT23 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2211T1/8A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2211T1B | ON | SOT23/SOT323 | auf Bestellung 4524 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2211T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T1G Produktcode: 103955 | ON | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T1G | ONSEMI | Description: ONSEMI - MUN2211T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 18445 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Collector-emitter voltage: 50V Current gain: 35...60 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.23W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC59 | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T1G | ONSEMI | Description: ONSEMI - MUN2211T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 698282 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Collector-emitter voltage: 50V Current gain: 35...60 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.23W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2211T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 41047 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 2851 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 149443 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 36591 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T1G | ONSEMI | Description: ONSEMI - MUN2211T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 18445 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T1G 8A... | ON-Semicoductor | Transistor NPN; 60; 230mW; 50V; 100mA; -55°C ~ 150°C; Substitute: MUN2211T3G; MUN2211T1G ONSemiconductors TMUN2211 Anzahl je Verpackung: 100 Stücke | auf Bestellung 422 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2211T1G 8A... | ON-Semicoductor | Transistor NPN; 60; 230mW; 50V; 100mA; -55°C ~ 150°C; Substitute: MUN2211T3G; MUN2211T1G ONSemiconductors TMUN2211 Anzahl je Verpackung: 100 Stücke | auf Bestellung 508 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2211T3 | ONSEMI | Description: ONSEMI - MUN2211T3 - MUN2211T3, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T3 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T3 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T3G | ONSEMI | MUN2211T3G NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T3G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 28261 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T3G | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2211T3G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T3G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 26712 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T3G | ONSEMI | Description: ONSEMI - MUN2211T3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 88340 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2212 | MOTO | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2212 | MOT | SOT23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2212LT1G | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2212T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2212T1 | ONSEMI | Description: ONSEMI - MUN2212T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2212T1 | MOTOROLA | 09+ | auf Bestellung 9018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2212T1 | ON | SOT23-8B | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2212T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2212T1 | ON | SOT23 | auf Bestellung 5460 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2212T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2212T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR NPN | auf Bestellung 15636 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2212T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2212T1G | ONSEMI | MUN2212T1G NPN SMD transistors | auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2212T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2212T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 28650 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2212T1G | ONSEMI | Description: ONSEMI - MUN2212T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 22 kohm, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (15-Jan-2018) | auf Bestellung 11256 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2212T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2212T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2212T1G | ONSEMI | Description: ONSEMI - MUN2212T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 22 kohm, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (15-Jan-2018) | auf Bestellung 11256 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2212T1SOT23-8B | ON | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2212T3 | Rochester Electronics, LLC | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2212XLT1 | auf Bestellung 2940 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2213 | onsemi | onsemi SS SC59 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213 | ON | 07+ SOT-23 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2213/8C | ON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2213JT1 | auf Bestellung 114000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2213JT1 | onsemi | Description: TRANS PREBIAS NPN 338MW SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213JT1G | ONSEMI | Description: ONSEMI - MUN2213JT1G - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2213JT1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213JT1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2213LT1 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2213LT1G | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2213T1 | ON | SOT23 | auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2213T1 | onsemi | Digital Transistors 100mA 50V BRT NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 545350 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2213T1 | ON | 07+; | auf Bestellung 252000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2213T1 | ONSEMI | Description: ONSEMI - MUN2213T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 545350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2213T1 | ON | 00+ SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2213T1/8C | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 39202 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2213T1G | ONSEMI | MUN2213T1G NPN SMD transistors | auf Bestellung 1590 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 39202 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2213T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 12252 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 1821 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2213T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 20945 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 1821 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2213T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2213T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214 | auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2214LT1 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2214T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2214T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2214T1 | ONSEMI | Description: ONSEMI - MUN2214T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2214T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 117000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214T1F | ON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2214T1G | onsemi | Bipolar Transistors - Pre-Biased 50 V Dual NPN BiPolar DRT | auf Bestellung 22048 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2214T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 44461 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2214T1G | ONSEMI | MUN2214T1G NPN SMD transistors | auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2214T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 50 V Dual NPN BiPolar DRT | auf Bestellung 14485 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2214T1G | ONSEMI | Description: ONSEMI - MUN2214T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: - usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9855 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2214T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2214T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 44461 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2214T1G | ONSEMI | Description: ONSEMI - MUN2214T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: - usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6599 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2214T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 10460 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214T3 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2214T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2214T3G | ON Semiconductor | Description: TRANS PREBIAS NPN 338MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2214T3G | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | auf Bestellung 19240 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2214T3G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2215LT1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2215LT1G | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2215T1 | ONSEMI | Description: ONSEMI - MUN2215T1 - MUN2215T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 309000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2215T1 | Rochester Electronics, LLC | Description: TRANS PREBIAS NPN 338MW SC59 | auf Bestellung 309000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2215T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | auf Bestellung 28715 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2215T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2215T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2215T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2215T1G | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2215T1G | ONSEMI | Description: ONSEMI - MUN2215T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 160hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (15-Jan-2018) | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2215T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2215T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | auf Bestellung 6313 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2215T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2215ZT1 | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2215ZT1(ON) | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2215ZT1. | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2216 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2216 | onsemi | onsemi SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2216-(TX) | auf Bestellung 19000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2216LT1G | ON | 10+ SOT-23 | auf Bestellung 255000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2216T1 | ONSEMI | Description: ONSEMI - MUN2216T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 228000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2216T1 | ON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2216T1 | ON | 08+ SOT-23 | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2216T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC-59 Packaging: Bulk | auf Bestellung 228000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2216T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms | auf Bestellung 47150 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2216T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2216T1G | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2216T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2216T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | auf Bestellung 10330 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN221JT1 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2230 | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2230T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms | auf Bestellung 405000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2230T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2230T1G | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2230T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2231 | onsemi | SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2231T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2231T1 | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2231T1 | auf Bestellung 93000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2231T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2231T1 | ONSEMI | Description: ONSEMI - MUN2231T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2231T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2231T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2231T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2231T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2231T1G | ON | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2231T1G | ONSEMI | Description: ONSEMI - MUN2231T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 264000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2231T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2231T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2231T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 8337 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2231T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2232 | onsemi | onsemi SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232LT1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2232LT1G | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2232T1 | ONSEMI | Description: ONSEMI - MUN2232T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2232T1 | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232T1 | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232T1/8J | MOTO | auf Bestellung 330000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2232T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2232T1G | ONSEMI | Description: ONSEMI - MUN2232T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 15hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 4.7kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2232T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2232T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2232T1G | ONSEMI | Description: ONSEMI - MUN2232T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 15hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 4.7kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2232T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2232T1G | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2232T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2232T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2233 | onsemi | onsemi SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2233 | MOTOROLA | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2233LT1G | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2233RT1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2233T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2233T1 | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2233T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2233T1 | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2233T1G | ONSEMI | Description: ONSEMI - MUN2233T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 175529 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2233T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2233T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.23W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC59 | auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2233T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 100959 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2233T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2233T1G | onsemi | Digital Transistors SS BR XSTR NPN 50V | auf Bestellung 17333 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2233T1G | ONSEMI | Description: ONSEMI - MUN2233T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (14-Jun-2023) | auf Bestellung 21945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2233T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2233T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2233T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.23W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke | auf Bestellung 640 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN2233T1G | ONSEMI | Description: ONSEMI - MUN2233T1G - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 338mW Bauform - Transistor: SC-59 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (14-Jun-2023) | auf Bestellung 21945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2233T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2233T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2234 | onsemi | SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2234T1 | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1 | ONSEMI | Description: ONSEMI - MUN2234T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2234T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC-59 Packaging: Bulk | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1G | ON Semiconductor | auf Bestellung 2550 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2234T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2234T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2234T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2235 | onsemi | onsemi NPN DIGITAL TRANSISTOR (B | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2235T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2235T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2235T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2235T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2235T1G | Sanyo | Description: DIGITAL TRANSISTOR (BRT) Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2235T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2235T1G | onsemi | Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR | auf Bestellung 13995 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2235T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 128829 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2236 | onsemi | onsemi SS SC59 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2236T1 | ONSEMI | Description: ONSEMI - MUN2236T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2236T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms | auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2236T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2236T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2236T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms | auf Bestellung 306000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2236T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2236T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2236T1G | ONSEMI | Description: ONSEMI - MUN2236T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 216000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2236T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 2893 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2237T1 | ON | SOT23-8P | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2237T1 | Rochester Electronics, LLC | Description: TRANS PREBIAS NPN 338MW SC59 | auf Bestellung 920995 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2237T1 | ONSEMI | Description: ONSEMI - MUN2237T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 920995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2237T1 | ON | SOT23 | auf Bestellung 2600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2237T1 | ON | 04+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2237T1 SOT23-8P | ON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2237T1G | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2237T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2237T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2237T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | auf Bestellung 24219 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2237T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 389700 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2237T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2237T1SOT23- | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2237T1SOT23-BP | ON | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN2238T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN2238T1G | ON Semiconductor | Description: TRANS PREBIAS NPN 338MW SC59 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2238T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2240T1 | ON | 07+; | auf Bestellung 8550 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN2240T1 | onsemi | Description: TRANS BRT NPN 100MA 50V SC-59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms | auf Bestellung 1415500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2240T1 | ONSEMI | Description: ONSEMI - MUN2240T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1415500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2240T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2240T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms | auf Bestellung 319000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2240T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2240T1G | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | auf Bestellung 35847 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2240T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2240T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2241T1 | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms | auf Bestellung 80975 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2241T1 | ONSEMI | Description: ONSEMI - MUN2241T1 - TRANS PREBIAS NPN 338MW SC59 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 80975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN2241T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN2241T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2241T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2241T1G | onsemi | Digital Transistors 100mA 50V BRT NPN | auf Bestellung 2764 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2241T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN2241T1G | onsemi | Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms | auf Bestellung 177000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN24AD01-SH | Delta Electronics Inc. | Module DC-DC 1-OUT 2V to 8.5V 1A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN24AD03-SM | Delta Electronics/Cyntec | Description: DC DC CONVERTER 5-12V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 25-BQFN Exposed Pad, Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 34V Efficiency: 94% Current - Output (Max): 3A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 8V Voltage - Output 1: 5 ~ 12V Part Status: Active Number of Outputs: 1 | auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN24AD03-SM | Delta Electronics Inc. | Module DC-DC 1-OUT 3V to 12V 3A 25-Pin QFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN24AD03-SM | Delta Electronics/Cyntec | Description: DC DC CONVERTER 5-12V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 25-BQFN Exposed Pad, Module Size / Dimension: 0.24" L x 0.24" W x 0.14" H (6.0mm x 6.0mm x 3.5mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 34V Efficiency: 94% Current - Output (Max): 3A Supplier Device Package: 25-QFN (6x6) Voltage - Input (Min): 8V Voltage - Output 1: 5 ~ 12V Part Status: Active Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3C1BR6-EB | Delta Electronics Inc. | MUN3C1BR6-EB | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3C1BR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Cut Tape (CT) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.2V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1BR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.2V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1BR6-SB | Delta Electronics | Non-Isolated DC/DC Converters 0.6A 5Vin/1.2Vout inductor-integrated DC-DC converters | auf Bestellung 1883 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1DR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Cut Tape (CT) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.35V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 7963 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1DR6-SB | Delta Electronics | Non-Isolated DC/DC Converters 0.6A 5Vin/1.35Vout inductor-integrated DC-DC converters | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1DR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.35V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1ER6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.5V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1ER6-SB | Delta Electronics | Non-Isolated DC/DC Converters 0.6A 5Vin/1.5Vout inductor-integrated DC-DC converters | auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1ER6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Cut Tape (CT) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.5V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1HR6-EB | Delta Electronics Inc. | MUN3C1HR6-EB | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3C1HR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.8V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1HR6-SB | Delta Electronics | Non-Isolated DC/DC Converters 0.6A 5Vin inductor-integrated DC-DC converter | auf Bestellung 1592 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3C1HR6-SB | Delta Electronics/Cyntec | Description: 0.6A 5VIN INDUCTOR-INTEGRATED DC Features: Remote On/Off Packaging: Cut Tape (CT) Package / Case: 4-SMD Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.1mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 600mA Voltage - Input (Min): 2.7V Voltage - Output 1: 1.8V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 9259 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-EE | Delta Electronics Inc. | MUN3CAD01-EE | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD01-SB | Delta Electronics | Non-Isolated DC/DC Converters 1A 5Vin inductor-integrated DC-DC converters | auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SB | Delta Electronics Inc. | Module DC-DC 1-OUT 0.8V to 4V 1A 8-Pin QFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD01-SB | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-4V Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 8-PowerTFQFN Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.0mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 150°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 92% Current - Output (Max): 1A Supplier Device Package: 8-QFN (2.5x2) Voltage - Input (Min): 2.5V Voltage - Output 1: 0.8 ~ 4V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SB | Cyntec Co | Module DC-DC 1-OUT 0.8V to 4V 1A 8-Pin QFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD01-SB | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-4V Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 8-PowerTFQFN Module Size / Dimension: 0.10" L x 0.08" W x 0.04" H (2.5mm x 2.0mm x 1.0mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 150°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 92% Current - Output (Max): 1A Supplier Device Package: 8-QFN (2.5x2) Voltage - Input (Min): 2.5V Voltage - Output 1: 0.8 ~ 4V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 13733 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SB EVB | Delta Electronics/Cyntec | Description: EVAL BOARD FOR MUN3CAD01SB Packaging: Box Voltage - Output: 1.8V Voltage - Input: 2.5V ~ 5.5V Current - Output: 1.2A Contents: Board(s) Frequency - Switching: 3MHz Board Type: Fully Populated Utilized IC / Part: MUN3CAD01-SB Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SB EVB | Delta Electronics | Power Management IC Development Tools Evaluation Board for MUN3CAD01-SB | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD01-SC | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-4V Features: Remote On/Off, OCP, SCP, UVLO Packaging: Tape & Reel (TR) Package / Case: 6-TDFN Module Size / Dimension: 0.11" L x 0.09" W x 0.04" H (2.9mm x 2.3mm x 1.0mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 93% Current - Output (Max): 1A Supplier Device Package: 6-DFN (2.9x2.3) Voltage - Input (Min): 2.7V Voltage - Output 1: 0.8 ~ 4V Number of Outputs: 1 | auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SC | Delta Electronics | Non-Isolated DC/DC Converters 1A 5Vin inductor-integrated DC-DC converter | auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SC | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.8-4V Features: Remote On/Off, OCP, SCP, UVLO Packaging: Cut Tape (CT) Package / Case: 6-TDFN Module Size / Dimension: 0.11" L x 0.09" W x 0.04" H (2.9mm x 2.3mm x 1.0mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 93% Current - Output (Max): 1A Supplier Device Package: 6-DFN (2.9x2.3) Voltage - Input (Min): 2.7V Voltage - Output 1: 0.8 ~ 4V Number of Outputs: 1 | auf Bestellung 22734 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD01-SC | Delta Electronics Inc. | MUN3CAD01-SC | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD02-JE | Delta Electronics/Cyntec | Description: POL 2A 5VIN DC-DC CONVERTER Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 18-PowerLFQFN Module Size / Dimension: 0.14" L x 0.10" W x 0.06" H (3.5mm x 2.5mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 105°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 2A Supplier Device Package: 18-QFN (3.5x2.5) Voltage - Input (Min): 2.7V Voltage - Output 1: 0.6 ~ 3.3V Power (Watts): 6.6 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD02-JE | Delta Electronics/Cyntec | Description: POL 2A 5VIN DC-DC CONVERTER Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 18-PowerLFQFN Module Size / Dimension: 0.14" L x 0.10" W x 0.06" H (3.5mm x 2.5mm x 1.6mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 105°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Current - Output (Max): 2A Supplier Device Package: 18-QFN (3.5x2.5) Voltage - Input (Min): 2.7V Voltage - Output 1: 0.6 ~ 3.3V Power (Watts): 6.6 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD03-JB | Delta Electronics/Cyntec | Description: POL 3A 5VIN DC-DC CONVERTER Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 10-TFDFN Module Size / Dimension: 0.10" L x 0.08" W x 0.05" H (2.6mm x 2.1mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 95% Current - Output (Max): 3A Supplier Device Package: 10-DFN (2.5x2) Voltage - Input (Min): 2.5V Voltage - Output 1: 0.6 ~ 4V Power (Watts): 12 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD03-JB | Delta Electronics/Cyntec | Description: POL 3A 5VIN DC-DC CONVERTER Packaging: Tape & Reel (TR) Features: Adjustable Output, Remote On/Off Package / Case: 10-TFDFN Module Size / Dimension: 0.10" L x 0.08" W x 0.05" H (2.6mm x 2.1mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 95% Current - Output (Max): 3A Supplier Device Package: 10-DFN (2.5x2) Voltage - Input (Min): 2.5V Voltage - Output 1: 0.6 ~ 4V Power (Watts): 12 W Number of Outputs: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD03-SE | Delta Electronics | Non-Isolated DC/DC Converters 3A 5Vin inductor-integrated DC-DC converter | auf Bestellung 3794 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SE | Delta Electronics/Cyntec | Description: 3A 5VIN INDUCTOR-INTEGRATED DC-D Packaging: Cut Tape (CT) Features: Adjustable Output, Remote On/Off Package / Case: 9-PowerLDFN Module Size / Dimension: 0.12" L x 0.11" W x 0.05" H (3.0mm x 2.8mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 95% Current - Output (Max): 3A Supplier Device Package: 9-QFN (3x2.8) Voltage - Input (Min): 2.75V Voltage - Output 1: 0.6 ~ 3.3V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 8159 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SE | Delta Electronics/Cyntec | Description: 3A 5VIN INDUCTOR-INTEGRATED DC-D Features: Adjustable Output, Remote On/Off Packaging: Tape & Reel (TR) Package / Case: 9-PowerLDFN Module Size / Dimension: 0.12" L x 0.11" W x 0.05" H (3.0mm x 2.8mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 125°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 95% Current - Output (Max): 3A Supplier Device Package: 9-QFN (3x2.8) Voltage - Input (Min): 2.75V Voltage - Output 1: 0.6 ~ 3.3V Control Features: Enable, Active High Part Status: Active Number of Outputs: 1 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SE EVB | Delta Electronics | Power Management IC Development Tools Evaluation Board for MUN3CAD03-SE | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN3CAD03-SE EVB | Delta Electronics/Cyntec | Description: EVAL BOARD FOR MUN3CAD03SE Packaging: Box Voltage - Output: 0.6V ~ 3.3V Voltage - Input: 2.75V ~ 5.5V Current - Output: 3A Contents: Board(s) Board Type: Fully Populated Utilized IC / Part: MUN3CAD03-SE Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SF | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-3.3V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Cut Tape (CT) Package / Case: 10-LFQFN Exposed Pad, Module Size / Dimension: 0.12" L x 0.12" W x 0.05" H (3.0mm x 3.0mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 94% Current - Output (Max): 3A Supplier Device Package: 10-QFN (3x3) Voltage - Input (Min): 2.75V Voltage - Output 1: 0.6 ~ 3.3V Number of Outputs: 1 | auf Bestellung 189255 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SF | Delta Electronics | Non-Isolated DC/DC Converters 3A 5Vin inductor-integrated DC-DC converter | auf Bestellung 1617 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CAD03-SF | Delta Electronics/Cyntec | Description: DC DC CONVERTER 0.6-3.3V Features: Remote On/Off, OCP, OTP, UVLO Packaging: Tape & Reel (TR) Package / Case: 10-LFQFN Exposed Pad, Module Size / Dimension: 0.12" L x 0.12" W x 0.05" H (3.0mm x 3.0mm x 1.3mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 5.5V Efficiency: 94% Current - Output (Max): 3A Supplier Device Package: 10-QFN (3x3) Voltage - Input (Min): 2.75V Voltage - Output 1: 0.6 ~ 3.3V Number of Outputs: 1 | auf Bestellung 188000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN3CADR6-EC | Delta Electronics Inc. | Module DC-DC 1-OUT 0.8V to 4V 0.6A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5111DW1T1 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5111DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5111DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5111DW1T1G | ONSEMI | Description: ONSEMI - MUN5111DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 57740 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5111DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 5791 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5111DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5111DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Case: SC70-6; SC88; SOT363 Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD | auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5111DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111DW1T1G | ONSEMI | Description: ONSEMI - MUN5111DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 57740 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5111DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 12288 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5111DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Case: SC70-6; SC88; SOT363 Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Anzahl je Verpackung: 5 Stücke | auf Bestellung 1050 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5111RT1 | auf Bestellung 186000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5111T1 | ON | 07+; | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V | auf Bestellung 39288 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5111T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 46084 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5111T1G | ONSEMI | MUN5111T1G NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 22085 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5111T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 22085 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5111T1G | onsemi | Digital Transistors SS BR XSTR PNP 50V | auf Bestellung 8841 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112 | onsemi | onsemi SS SC70 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112DW1 | onsemi | SS SC88 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112DW1T1 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5112DW1T1 | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 14300 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5112DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 21960 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112DW1T1G | ONSEMI | Description: ONSEMI - MUN5112DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5112DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 53576 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112DW1T1G | ONSEMI | MUN5112DW1T1G PNP SMD transistors | auf Bestellung 2499 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5112T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SOT-323 Packaging: Bulk | auf Bestellung 774000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112T1 | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5112T1 | ONSEMI | Description: ONSEMI - MUN5112T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 774000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5112T1/6B | MOTO | auf Bestellung 108000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5112T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 13240 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112T1G | ONSEMI | Description: ONSEMI - MUN5112T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 467900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5112T1G | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5112T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5112T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5112T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 9190 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113 | MOT | SOT-323 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7788 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113DW1T1 | ONSEMI | Description: ONSEMI - MUN5113DW1T1 - MUN5113DW1T1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5113DW1T1 | auf Bestellung 2268 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ | auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 5 Stücke | auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113DW1T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V | auf Bestellung 5067 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113DW1T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 11410 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113T1 | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1 | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1 | ON | SOT323 | auf Bestellung 5944 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113T1 | ON | 09+ | auf Bestellung 2918 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1G | ON | 09+ | auf Bestellung 291018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 190000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R | auf Bestellung 1630 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5113T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R | auf Bestellung 1630 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T1G | ONSEMI | Description: ONSEMI - MUN5113T1G - DIGITAL TRANSISTOR, 50V, 0.1A tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 190000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5113T1G | ON Semiconductor | auf Bestellung 266900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN5113T3 | ON | 0403+ | auf Bestellung 8050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113T3 | ON | 0403+ SOT23-5 | auf Bestellung 16100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5113T3G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | auf Bestellung 29985 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5113T3G | ONSEMI | Description: ONSEMI - MUN5113T3G - DIGITAL TRANSISTOR, 50V, 0.1A tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 209850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5113T3G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 209850 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113T3G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T3G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5113T3G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114 | auf Bestellung 2930 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5114DW1T1 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5114DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114DW1T1 | ONSEMI | Description: ONSEMI - MUN5114DW1T1 - TRANS 2PNP PREBIAS 0.25W SOT363 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114DW1T1G | ONSEMI | Description: ONSEMI - MUN5114DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13559 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114DW1T1G | ONSEMI | Description: ONSEMI - MUN5114DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach pnp Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13559 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114DW1T1G | ONSEMI | Description: ONSEMI - MUN5114DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 366379 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114DW1T1G | ONSEMI | MUN5114DW1T1G PNP SMD transistors | auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5114DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 18661 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 24250 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5114DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 24250 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5114RT1 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5114T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114T1 | ON | 2001 | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ONSEMI | Description: ONSEMI - MUN5114T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SC-70 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (15-Jan-2018) | auf Bestellung 11609 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5114T1G | ONSEMI | Description: ONSEMI - MUN5114T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 238161 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ON | 07+; | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5114T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 16161 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5114T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 14900 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ONSEMI | Description: ONSEMI - MUN5114T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SC-70 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (15-Jan-2018) | auf Bestellung 11609 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5114T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5114T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5115D | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5115DW | auf Bestellung 2197 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP | auf Bestellung 5955 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Description: TRANS PREBIAS 2PNP 50V SC88 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115DW1T1G | ONSEMI | MUN5115DW1T1G PNP SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5115DW1T1G | Rochester Electronics, LLC | Description: SMALL SIGNAL BIPOLAR TRANSISTOR, | auf Bestellung 274666 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5115DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 8940 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Description: TRANS PREBIAS 2PNP 50V SC88 | auf Bestellung 2840 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5115T1 | ONSEMI | Description: ONSEMI - MUN5115T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5115T1 | Rochester Electronics, LLC | Description: TRANS PREBIAS PNP 202MW SC70-3 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5115T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5115T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 50V SC70-3 | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | auf Bestellung 32543 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115T1G | Rochester Electronics, LLC | Description: SMALL SIGNAL BIPOLAR TRANSISTOR, | auf Bestellung 46000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5115T1G | ONSEMI | Description: ONSEMI - MUN5115T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 73000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5115T1G | auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5115T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 5077 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5115T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 | auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5116DW1T1 | ONSEMI | Description: ONSEMI - MUN5116DW1T1 - TRANS 2PNP PREBIAS 0.25W SOT363 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5116DW1T1 | MOT | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN5116DW1T1G | ONSEMI | Description: ONSEMI - MUN5116DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 46833 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 8535 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 2076 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5116DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3840 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 8535 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5116DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116RT1 | auf Bestellung 105000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5116T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116T1 | auf Bestellung 26600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5116T1 | ONSEMI | Description: ONSEMI - MUN5116T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5116T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5116T1G | ONSEMI | Description: ONSEMI - MUN5116T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5116T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5117T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5130DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5130DW1T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 11568 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5130DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5130DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5130T1 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5130T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5130T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5130T1G | ONSEMI | Description: ONSEMI - MUN5130T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5131DW1T1G | ONSEMI | MUN5131DW1T1G PNP SMD transistors | auf Bestellung 770 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5131DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5131DW1T1G | ONSEMI | Description: ONSEMI - MUN5131DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5131DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131DW1T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 8749 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5131DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131T1 | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5131T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5131T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 23498 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5131T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 25683 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5131T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5131T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 23498 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5131T1G | ONSEMI | Description: ONSEMI - MUN5131T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 721000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5132DW1T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5132DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5132DW1T1G | ON Semiconductor | Description: TRANS 2PNP PREBIAS 0.25W SC88 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5132RT1 | auf Bestellung 204000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5132T1 | ONSEMI | Description: ONSEMI - MUN5132T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 204000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5132T1 | auf Bestellung 3719 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | auf Bestellung 14735 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5132T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 2317 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MUN5132T1G | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 5148 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | auf Bestellung 30313 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5132T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 5148 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MUN5133 | onsemi | onsemi SS SC70 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133DW1T1 | ONSEMI | Description: ONSEMI - MUN5133DW1T1 - TRANS 2PNP PREBIAS 0.25W SOT363 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133DW1T1 | onsemi | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133DW1T1 | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5133DW1T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 4756 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18200 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 17533 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133DW1T1G | ONSEMI | MUN5133DW1T1G PNP SMD transistors | auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133DW1T1G | ONSEMI | Description: ONSEMI - MUN5133DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 48069 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 60302 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 17533 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133RT1 | auf Bestellung 1269000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5133T1 | ONSEMI | Description: ONSEMI - MUN5133T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133T1 | onsemi | Description: TRANS BRT PNP 100MA 50V SOT-323 | auf Bestellung 162000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5133T1 | auf Bestellung 19000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 42600 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ONSEMI | Description: ONSEMI - MUN5133T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ONSEMI | Description: ONSEMI - MUN5133T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SC-70 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13445 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 | auf Bestellung 15259 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V | auf Bestellung 1008 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 42600 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5133T1G | ONSEMI | Description: ONSEMI - MUN5133T1G - Bipolarer Transistor, pre-biased/digital, Einfach PNP, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SC-70 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13445 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5133T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5134DW1T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5134DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5134DW1T1G | ON Semiconductor | Description: TRANS 2PNP PREBIAS 0.25W SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5134T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5134T1G | onsemi | Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5135DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1 | onsemi | Digital Transistors 100mA 50V BRT PNP | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5135DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 20390 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector-emitter voltage: 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector-emitter voltage: 50V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135DW1T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135DW1T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 6524 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135DW1T1G (SOT363, ON) 2хТранзистора Produktcode: 153435 | ON | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-363 U, V: 50 V U, V: 50 V I, А: 0,1 A | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135T1 | auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 11112 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 31000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5135T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | auf Bestellung 33043 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5135T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5135T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 73000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5136DW1T1 | ON Semiconductor | Description: TRANS 2PNP PREBIAS 0.25W SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5136DW1T1G | onsemi | Description: MUN5136 - DUAL BIAS RESISTOR TRA Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5136DW1T1G | ONSEMI | Description: ONSEMI - MUN5136DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5136DW1T1G | onsemi | Digital Transistors Dual Bias Resistor Transistor | auf Bestellung 2290 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5136DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5136T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5136T1 | ON | SOT-323 01+ | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5136T1 | ONSEMI | Description: ONSEMI - MUN5136T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5136T1G | onsemi | Digital Transistors SS SC70 BR XSTR PNP 50V | auf Bestellung 29749 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5136T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 600mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5136T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5136T1G | ONSEMI | Description: ONSEMI - MUN5136T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5137DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137DW1T1 | ONSEMI | Description: ONSEMI - MUN5137DW1T1 - TRANS 2PNP PREBIAS 0.25W SOT363 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5137DW1T1 | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 5975 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5137DW1T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137DW1T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137DW1T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.25W SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual PNP | auf Bestellung 14399 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5137T1 | ONSEMI | Description: ONSEMI - MUN5137T1 - TRANS PREBIAS PNP 202MW SC70-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5137T1 | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW SC70-3 | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5137T1G | onsemi | Digital Transistors 100mA 50V BRT PNP | auf Bestellung 2881 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5137T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5137T1G | ONSEMI | Description: ONSEMI - MUN5137T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5138T1G | ON Semiconductor | Description: TRANS PREBIAS PNP 202MW | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5138T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5138T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5138T1G | ONSEMI | Description: ONSEMI - MUN5138T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 165000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5140RT1 | auf Bestellung 156000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5140T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms | auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5140T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5140T1G | onsemi | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5140T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5141T1G | onsemi | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5141T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 100 kOhms | auf Bestellung 285000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5141T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5141T1G | onsemi | Description: TRANS PREBIAS PNP 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 100 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211 | MOTOROLA | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| MUN5211 | onsemi | SS SC70 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211-(TX) | auf Bestellung 350 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5211DW1 | onsemi | onsemi SS SC88 BR XSTR NPN 50V | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5211DW1T1 | auf Bestellung 597000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5211DW1T1 | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 61605 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 61605 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1G | ONSEMI | Description: ONSEMI - MUN5211DW1T1G - Bipolarer Transistor, pre-biased/digital, BRT, Zweifach npn, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: - usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13395 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 147000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 21194 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 56720 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual NPN | auf Bestellung 25095 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 147000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ONSEMI | Description: ONSEMI - MUN5211DW1T1G - Bipolarer Transistor, pre-biased/digital, BRT, Zweifach npn, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: - usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 13395 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 21194 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1 | ONSEMI | Description: ONSEMI - MUN5211T1 - MUN5211T1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211T1 | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1 | auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5211T1 | onsemi | Digital Transistors 100mA 50V BRT NPN | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5211T1 | onsemi | Description: TRANS BRT NPN 50V SS MONO SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.31W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SC70; SOT323 Collector-emitter voltage: 50V Current gain: 60 | auf Bestellung 1614 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ONSEMI | Description: ONSEMI - MUN5211T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 56820 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 16144 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G Produktcode: 113765 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
| MUN5211T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 348000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 291000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ON-Semicoductor | NPN 100mA 50V 202mW MUN5211T1G ON Semiconductor TMUN5211t1g Anzahl je Verpackung: 500 Stücke | auf Bestellung 2040 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 16144 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ONSEMI | Description: ONSEMI - MUN5211T1G - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 35hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 56790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 291000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.31W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SC70; SOT323 Collector-emitter voltage: 50V Current gain: 60 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1614 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5211T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5211T1G | onsemi | Digital Transistors SS BR XSTR NPN 50V | auf Bestellung 48223 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 349742 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5211T1G/DTC114EU | PANASONIC | 09+ SOT323 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5212 | auf Bestellung 3020 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5212DW1T1 | ON | 09+ | auf Bestellung 27018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5212DW1T1 | ONSEMI | Description: ONSEMI - MUN5212DW1T1 - TRANS 2NPN PREBIAS 0.25W SOT363 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | ONSEMI | Description: ONSEMI - MUN5212DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 22 kohm, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7775 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5212DW1T1G | ONSEMI | Description: ONSEMI - MUN5212DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 22 kohm, 22 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 22kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 385mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7775 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | onsemi | Digital Transistors 100mA 50V BRT Dual NPN | auf Bestellung 88825 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5212DW1T1G | ONSEMI | Description: ONSEMI - MUN5212DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | onsemi | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 5572 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 41886 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212DW1T1G | ON-Semicoductor | 2NPN 50V 100mA 250mW MUN5212DW1T1G ONSemiconductor TMUN5212dw Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| MUN5212DW1T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R | auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212PW | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| MUN5212T1 | ON | SOT323 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| MUN5212T1 | ONSEMI | Description: ONSEMI - MUN5212T1 - MUN5212T1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 62700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212T1 | Rochester Electronics, LLC | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | auf Bestellung 110724 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| MUN5212T1G | ONSEMI | Description: ONSEMI - MUN5212T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 130850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| MUN5212T1G | ON Semiconductor | Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| MUN5212T1G | ON Semiconductor | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | auf Bestellung 60186 Stücke: Lieferzeit 10-14 Tag (e) |