MUN2211T3G ON Semiconductor
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.03 EUR |
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Technische Details MUN2211T3G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SC-59, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 230 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote MUN2211T3G nach Preis ab 0.028 EUR bis 0.26 EUR
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MUN2211T3G | Hersteller : onsemi |
 Description: TRANS PREBIAS NPN 50V 0.1A SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2211T3G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 26712 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2211T3G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 28261 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUN2211T3G | Hersteller : ONSEMI |
Description: ONSEMI - MUN2211T3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 88340 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2211T3G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2211T3G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 10000 Stücke |
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MUN2211T3G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |