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MUN2230T1G

MUN2230T1G onsemi

dtc113e-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 405000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10606+0.049 EUR
Mindestbestellmenge: 10606
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Technische Details MUN2230T1G onsemi

Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.

Weitere Produktangebote MUN2230T1G nach Preis ab 0.058 EUR bis 0.45 EUR

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MUN2230T1G MUN2230T1G Hersteller : onsemi DTC113E_D-1387470.pdf Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.45 EUR
10+ 0.37 EUR
100+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.088 EUR
3000+ 0.069 EUR
9000+ 0.058 EUR
Mindestbestellmenge: 7
MUN2230T1G MUN2230T1G Hersteller : ON Semiconductor dtc113e-d.pdf Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R
Produkt ist nicht verfügbar
MUN2230T1G MUN2230T1G Hersteller : onsemi dtc113e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar