Produkte > IXF
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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IXF1002EC | LEVELONE | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF1002EC | LEVEL ONE | 09+ . | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF1002ED | Rochester Electronics, LLC | Description: IXF1002ED Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 8930 Stücke: Lieferzeit 10-14 Tag (e) |
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IXF1002ED-G | Rochester Electronics, LLC | Description: IXF1002ED-G Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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IXF1024EC | INTEL | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXF1024ECA2 | INTERSIL | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXF102A | Icon | Description: HEADLIGHT LED 5/50LM AA(1) | Produkt ist nicht verfügbar | |||||||||||||||
IXF1104CE | INTEL | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXF1104CE | MOT | BGA | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF1104CE | INTEL | TO92 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF1104CE.BO | INTEL | BGA 0612+ | auf Bestellung 83 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF150N10 | IXYS | MODULE | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF18203EC B1 | INTEL | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF30003 | INTEL | 02+ BGA | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF3208BE CO | INTEL | BGA | auf Bestellung 325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6012EE B1 | LEVELONE | BGA | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6012EE B1 | INTER | 09+ BGA | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6012EEB1 | INTEL | 04+ BGA | auf Bestellung 2035 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF611P1 | IXYS | Description: IC DRIVER MOSF/IGBT HALF 8DIP | Produkt ist nicht verfügbar | |||||||||||||||
IXF611S1 | IXYS | Description: IC DRIVER MOSF/IGBT HALF 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||
IXF611S1T/R | IXYS | Description: IC DRIVER MOSF/IGBT HALF 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||
IXF6151BE A2 | INTEL | 01+ | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6401BEC-7 | LEVELONE | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6401BEC7A1835148 | Intel | Description: IC PROCESSOR BROADBAND 352BGA | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXF6402BEC B4 | LEVELONE | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXF6402BEC B4 | INTER | 09+ BGA | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFA102N15T | IXYS | Description: MOSFET N-CH 150V 102A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N60P | IXYS | MOSFETs 600V 10A | auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N60P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N60P | Littelfuse Inc. | Description: MOSFET N-CH 600V 10A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V | auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N60P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N60P | Littelfuse | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N60P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 600V 10A D2-PAK Packaging: Cut Tape (CT) | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N60P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 600V 10A D2-PAK Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N60P-TRL | IXYS | MOSFETs 600V 10A | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P | IXYS | MOSFETs 10 Amps 800V 1.1 Rds | auf Bestellung 10121 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFA10N80P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 40nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P | Littelfuse | Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 10A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P | Littelfuse | Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 800V 10A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80P-TRL | IXYS | MOSFETs IXFA10N80P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA10N80PTRL | Littelfuse | Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA110N15T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Power dissipation: 480W Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced | auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA110N15T2 | Littelfuse | Trans MOSFET N-CH 150V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA110N15T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Power dissipation: 480W Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA110N15T2 | IXYS | MOSFET 110Amps 150V | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA110N15T2 | IXYS | Description: MOSFET N-CH 150V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA110N15T2-TRL | IXYS | Description: MOSFET N-CH 150V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA110N15T2-TRL | IXYS | MOSFET IXFA110N15T2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N50P | IXYS | Description: MOSFET N-CH 500V 12A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N50P | IXYS | MOSFETs 500V 12A | auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA12N50P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA12N50P | Littelfuse | Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N50P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 277 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA12N50P TRL | Littelfuse | Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N50P-TRL | IXYS | MOSFETs IXFA12N50P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N50P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 500V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N65X2 | Littelfuse Inc. | Description: MOSFET N-CH 650V 12A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V | auf Bestellung 1238 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA12N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N65X2 | IXYS | MOSFETs 650V/12A TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N65X2-TRL | IXYS | MOSFETs IXFA12N65X2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA12N65X2-TRL | Littelfuse Inc. | Description: MOSFET N-CH 650V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N10T | Littelfuse Inc. | Description: MOSFET N-CH 100V 130A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N10T | IXYS | MOSFETs 130 Amps 100V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N10T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA130N10T2 | IXYS | MOSFETs Trench T2 HiperFET Power MOSFET | auf Bestellung 306 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N10T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA130N10T2 | Littelfuse Inc. | Description: MOSFET N-CH 100V 130A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N10T2-TRL | IXYS | MOSFETs IXFA130N10T2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N10T2-TRL | Littelfuse Inc. | Description: MOSFET N-CH 100V 130A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 65A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N10T2-TRL | Littelfuse | Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N15X3 | IXYS | Description: MOSFET N-CH 150V 130A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V | auf Bestellung 1359 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N15X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 80ns | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA130N15X3 | Littelfuse | Trans MOSFET N-CH 150V 130A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N15X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 80ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA130N15X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N15X3TRL | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA130N15X3TRL | IXYS | Description: MOSFET N-CH 150V 130A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO263 On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P | Littelfuse | Trans MOSFET N-CH 600V 14A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO263 On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P | Littelfuse Inc. | Description: MOSFET N-CH 600V 14A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V | auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA14N60P | IXYS | MOSFETs 600V 14A | auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA14N60P-TRL | IXYS | MOSFETs IXFA14N60P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 600V 14A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N60P3 | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA14N60P3 | IXYS | Description: MOSFET N-CH 600V 14A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V Power Dissipation (Max): 327W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N85XHV | IXYS | Description: MOSFET N-CH 850V 14A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V | auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA14N85XHV | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO263HV On-state resistance: 0.55Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns | auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA14N85XHV | Littelfuse | Trans MOSFET N-CH 850V 14A 3-Pin(2+Tab) TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N85XHV | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3&44 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA14N85XHV | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO263HV On-state resistance: 0.55Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA16N50P | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO263 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P | IXYS | MOSFETs 500V 16A | auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA16N50P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO263 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P | IXYS | Description: MOSFET N-CH 500V 16A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 500V 16A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P-TRL | IXYS | MOSFET IXFA16N50P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA16N50P3 | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA16N50P3 | IXYS | Description: MOSFET N-CH 500V 16A TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N60P3 | IXYS | MOSFETs 600V 16A | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N60P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA16N60P3 | Littelfuse Inc. | Description: MOSFET N-CH 600V 16A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V Power Dissipation (Max): 347W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA16N60P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA180N10T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA180N10T2 | Littelfuse Inc. | Description: MOSFET N-CH 100V 180A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V | auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA180N10T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA180N10T2 | IXYS | MOSFETs Trench T2 HiperFET Power MOSFET | auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA180N10T2 | Littelfuse | Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA180N10T2-TRL | IXYS | MOSFETs IXFA180N10T2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA180N10T2-TRL | Littelfuse | N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA180N10T2-TRL | Littelfuse Inc. | Description: MOSFET N-CH 100V 180A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N60X | Littelfuse | X-CLASS HIPER FET POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N60X | IXYS | Description: MOSFET N-CH 600V 18A TO263AA | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns | auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA18N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA18N60X | IXYS | MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X2 | IXYS | MOSFETs 650V/18A TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X2 | Littelfuse Inc. | Description: MOSFET N-CH 650V 18A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X3 | Littelfuse | MOSFETs TO263 650V 18A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFA18N65X3 | Littelfuse Inc. | Description: DISCRETE MOSFET 18A 650V X3 TO26 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N50P3 | Littelfuse Inc. | Description: MOSFET N-CH 500V 20A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N50P3 | IXYS | MOSFETs Polar3 HiPerFET Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA20N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA20N60X3 | Littelfuse | MOSFETs TO263 600V 20A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N60X3 | Littelfuse Inc. | Description: DISCRETE MOSFET 20A 600V X3 TO26 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV | IXYS | Description: MOSFET N-CH 850V 20A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV | IXYS | IXFA20N85XHV SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV | Littelfuse | Trans MOSFET N-CH 850V 20A Automotive 3-Pin(2+Tab) TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV | Littelfuse | Trans MOSFET N-CH 850V 20A 3-Pin(2+Tab) TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV | IXYS | MOSFETs 850V Ultra Junction X-Class Pwr MOSFET | auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA20N85XHV-TRL | Littelfuse | Trans MOSFET N-CH 850V 20A 3-Pin(2+Tab) TO-263HV T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV-TRL | IXYS | MOSFET IXFA20N85XHV TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA20N85XHV-TRL | IXYS | Description: MOSFET N-CH 850V 20A TO263HV | Produkt ist nicht verfügbar | |||||||||||||||
IXFA220N06T3 | IXYS | MOSFETs 60V/220A TrenchT3 | auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA220N06T3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA220N06T3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA220N06T3 | IXYS | Description: MOSFET N-CH 60V 220A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V | auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA220N06T3 Produktcode: 147921 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFA22N60P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO263 On-state resistance: 390mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA22N60P3 | Littelfuse Inc. | Description: MOSFET N-CH 600V 22A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 11A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA22N60P3 | IXYS | MOSFETs TO263 600V 22A N-CH POLAR | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N60P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO263 On-state resistance: 390mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA22N65X2 | IXYS | MOSFETs MOSFET 650V/22A Ultra Junction X2 | auf Bestellung 512 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA22N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 145ns Drain-source voltage: 650V Drain current: 22A On-state resistance: 0.145Ω Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 37nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Case: TO263 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 145ns Drain-source voltage: 650V Drain current: 22A On-state resistance: 0.145Ω Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 37nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Case: TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N65X2 | Littelfuse Inc. | Description: MOSFET N-CH 650V 22A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V | auf Bestellung 1894 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA22N65X2 | Littelfuse | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N65X2-TRL | Littelfuse Inc. | Description: MOSFET N-CH 650V 22A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA22N65X2-TRL | Littelfuse | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N65X2-TRL | IXYS | MOSFETs IXFA22N65X2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA22N65X2-TRL | Littelfuse Inc. | Description: MOSFET N-CH 650V 22A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA230N075T2 | Littelfuse | Trans MOSFET N-CH 75V 230A Automotive 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA230N075T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA230N075T2 | IXYS | MOSFET TrenchT2 HiperFETs Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA230N075T2 | IXYS | Description: MOSFET N-CH 75V 230A TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
IXFA230N075T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA230N075T2-7 | IXYS | Description: MOSFET N-CH 75V 230A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA230N075T2-7 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA230N075T2-7 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA230N075T2-7 | IXYS | MOSFET TrenchT2 HiperFETs Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA24N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA24N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA24N60X | IXYS | MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA24N60X | IXYS | Description: MOSFET N-CH 600V 24A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N30X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA26N30X3 | IXYS | Description: MOSFET N-CH 300V 26A TO263AA | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA26N30X3 | Littelfuse | Trans MOSFET N-CH 300V 26A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA26N50P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N50P3 | IXYS | MOSFETs N-Channel: Power MOSFET w/Fast Diode | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N50P3 | Littelfuse Inc. | Description: MOSFET N-CH 500V 26A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N65X3 | Littelfuse | MOSFETs TO263 650V 26A N-CH HIPER | Produkt ist nicht verfügbar | |||||||||||||||
IXFA26N65X3 | Littelfuse Inc. | Description: DISCRETE MOSFET 26A 650V X3 TO26 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA270N06T3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA270N06T3 | Littelfuse | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA270N06T3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA270N06T3 | IXYS | MOSFET 60V/270A TrenchT3 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA270N06T3 | IXYS | Description: MOSFET N-CH 60V 270A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA28N60X3 | Littelfuse | MOSFETs TO263 600V 28A N-CH HIPER | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N25X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 1036 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA30N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N25X3 | IXYS | Description: MOSFET N-CHANNEL 250V 30A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V | auf Bestellung 640 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA30N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N25X3 | Littelfuse | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO263 On-state resistance: 155mΩ Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N60X | IXYS | Description: MOSFET N-CH 600V 30A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N60X | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO263 On-state resistance: 155mΩ Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA30N60X | IXYS | MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2 | Littelfuse | Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2 | IXYS | MOSFET 650V/34A Ultra Junction X2-Class | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2 | Littelfuse | Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2-TRL | IXYS | Description: MOSFET N-CH 650V 34A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2-TRL | IXYS | MOSFETs IXFA34N65X2 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X2-TRL | Littelfuse | Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X3 | Littelfuse Inc. | Description: MOSFET 34A 650V X3 TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X3 | IXYS | MOSFETs TO263 650V 34A N-CH X3CLASS | auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA34N65X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA34N65X3 | Littelfuse | Discrete MOSFET 34A 650V X3 TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N20X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA36N20X3 | Littelfuse | Trans MOSFET N-CH 200V 36A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N20X3 | IXYS | IXFA36N20X3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N20X3 | IXYS | Description: MOSFET N-CH 200V 36A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V | auf Bestellung 1696 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA36N30P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 347W Case: TO263 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 125ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N30P3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 347W Case: TO263 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 125ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N30P3 | IXYS | Description: MOSFET N-CH 300V 36A TO263AA | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA36N30P3 | IXYS | MOSFET MSFT N-CH HIPERFET-POLAR3 | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA36N30P3 | Littelfuse | Trans MOSFET N-CH 300V 36A 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N55X2 | Littelfuse Inc. | Description: IXFA36N55X2 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N55X2 | IXYS | MOSFET MOSFET DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N60X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N60X3 | Littelfuse | N-Channel Enhancement Mode Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N60X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N60X3 | Littelfuse Inc. | Description: MOSFET ULTRA JCT 600V 36A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA36N60X3 | IXYS | MOSFETs DISCRETE MOSFET 36A 600V X3 TO | auf Bestellung 1500 Stücke: Lieferzeit 234-238 Tag (e) |
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IXFA38N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns | auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA38N30X3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 38A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V | auf Bestellung 4567 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA38N30X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 362 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA38N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA38N30X3 | Littelfuse | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120 | IXYS | MOSFETs 3 Amps 1200V 4.5 Rds | auf Bestellung 350 Stücke: Lieferzeit 409-413 Tag (e) |
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IXFA3N120 | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120 Produktcode: 83348 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||
IXFA3N120 | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA3N120 | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120 | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA3N120 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120 | IXYS | Description: MOSFET N-CH 1200V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRL | IXYS | Description: MOSFET N-CH 1200V 3A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRL | IXYS | Description: MOSFET N-CH 1200V 3A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRL | IXYS | MOSFETs IXFA3N120 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRL | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRR | IXYS | MOSFETs IXFA3N120 TRR | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRR | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120-TRR | IXYS | Description: MOSFET N-CH 1200V 3A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N120TRL | Littelfuse | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N80 | IXYS | Description: MOSFET N-CH 800V 3.6A TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA3N80 | IXYS | MOSFET 3.6 Amps 800V 3.6 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFA44N25X3 | IXYS | MOSFET MOSFET DISC X3 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA44N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: SMD Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO263 Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA44N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: SMD Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO263 Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA44N25X3 | IXYS | Description: MOSFET N-CH 250V 44A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | auf Bestellung 1550 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA4N100P | IXYS | MOSFETs 4 Amps 1000V | auf Bestellung 800 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFA4N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100P | Littelfuse Inc. | Description: MOSFET N-CH 1000V 4A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100P | Littelfuse | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100P-TRL | IXYS | MOSFETs IXFA4N100P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q | Littelfuse Inc. | Description: MOSFET N-CH 1000V 4A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q | Littelfuse | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q | IXYS | MOSFETs 4 Amps 1000V 2.8 Rds | auf Bestellung 360 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFA4N100Q | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q-TRL | IXYS | Description: MOSFET N-CH 1000V 4A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q-TRL | IXYS | Description: MOSFET N-CH 1000V 4A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q-TRL | Littelfuse | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100Q-TRL | IXYS | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N100QTR | Littelfuse | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N60P3 | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N60P3 | IXYS | Description: MOSFET N-CH 600V 4A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA4N85X | IXYS | MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-263 | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA4N85X | IXYS | Description: MOSFET N-CH 850V 3.5A TO263 | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA4N85X | IXYS | IXFA4N85X SMD N channel transistors | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA50N20X3 | Littelfuse Inc. | Description: MOSFET N-CH 200V 50A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA50N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 70A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA50N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 70A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA50N20X3 | IXYS | MOSFETs TO263 200V 50A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFA56N30X3 | IXYS | MOSFETs TO263 300V 56A N-CH X3CLASS | auf Bestellung 1521 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA56N30X3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 56A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA56N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263 Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 Reverse recovery time: 115ns Drain-source voltage: 300V Drain current: 56A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA56N30X3 | Littelfuse | Trans MOSFET N-CH 300V 56A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA56N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263 Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 Reverse recovery time: 115ns Drain-source voltage: 300V Drain current: 56A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA56N30X3-TRL | Littelfuse | DiscMSFT NChUltrJnctn X3Class TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N100P | IXYS | Description: MOSFET N-CH 1000V 5A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA5N100P | IXYS | MOSFETs Polar Power MOSFET HiPerFET | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA5N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263 Mounting: SMD Kind of package: tube Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Type of transistor: N-MOSFET Power dissipation: 250W Gate charge: 33.4nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Case: TO263 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N100P | Littelfuse | Trans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263 Mounting: SMD Kind of package: tube Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Type of transistor: N-MOSFET Power dissipation: 250W Gate charge: 33.4nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Case: TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N100P-TRL | IXYS | Description: MOSFET N-CH 1000V 5A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA5N100P-TRL | IXYS | MOSFET IXFA5N100P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N100PTRL | Littelfuse | Trans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N50P3 | IXYS | Description: MOSFET N-CH 500V 5A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA5N50P3 | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Produkt ist nicht verfügbar | |||||||||||||||
IXFA60N25X3 | IXYS | Description: MOSFET N-CH 250V 60A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA60N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO263 On-state resistance: 23mΩ Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA60N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO263 On-state resistance: 23mΩ Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns | auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA60N25X3 | IXYS | MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA60N25X3 | Littelfuse | Trans MOSFET N-CH 250V 60A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA6N120P | Littelfuse Inc. | Description: MOSFET N-CH 1200V 6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V | auf Bestellung 3660 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA6N120P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.75Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA6N120P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.75Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFA6N120P | IXYS | MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA6N120P-TRL | Littelfuse | Trans MOSFET N-CH 1.2KV 6A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA6N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA6N120P-TRL | IXYS | MOSFETs IXFA6N120P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA72N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 320W Case: TO263 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 55nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 84ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 83 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA72N20X3 | Littelfuse | Trans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA72N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 320W Case: TO263 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 55nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 84ns | auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA72N20X3 | IXYS | Description: MOSFET N-CH 200V 72A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V | auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA72N20X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA72N30X3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 72A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V | auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA72N30X3 | IXYS | MOSFETs TO263 300V 72A N-CH X3CLASS | auf Bestellung 1032 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA72N30X3 | LITTELFUSE | Description: LITTELFUSE - IXFA72N30X3 - Leistungs-MOSFET, n-Kanal, 300 V, 72 A, 0.019 ohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 300 Dauer-Drainstrom Id: 72 hazardous: false Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 390 Gate-Source-Schwellenspannung, max.: 4.5 euEccn: NLR Verlustleistung: 390 Bauform - Transistor: TO-263 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.019 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.019 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFA72N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFA72N30X3 | Littelfuse | Trans MOSFET N-CH 300V 72A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA72N30X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA72N30X3-TRL | IXYS | MOSFET IXFA72N30X3 TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA76N15T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns Power dissipation: 350W Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 97nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA76N15T2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns Power dissipation: 350W Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 97nC Kind of channel: enhanced | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA76N15T2 | IXYS | MOSFET MSFT N-CH TRENCH GATE -GEN2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA76N15T2 | IXYS | Description: MOSFET N-CH 150V 76A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA76N15T2-TRL | IXYS | Description: MOSFET N-CH 150V 76A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA7N100P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFA7N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Polar HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.9ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFA7N100P | IXYS | Description: MOSFET N-CH 1000V 7A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V | auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA7N100P | IXYS | MOSFET 7 Amps 1000V | auf Bestellung 300 Stücke: Lieferzeit 401-405 Tag (e) |
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IXFA7N100P | Littelfuse | Trans MOSFET N-CH 1KV 7A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N100P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA7N100P-TRL | Littelfuse | Trans MOSFET N-CH 1KV 7A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N100P-TRL | IXYS | Description: MOSFET N-CH 1000V 7A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N100P-TRL | IXYS | MOSFET IXFA7N100P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N60P3 | IXYS | Description: MOSFET N-CH 600V 7A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N60P3 | IXYS | MOSFET 600V 7A | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N80P | IXYS | MOSFETs 7 Amps 800V 1.44 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N80P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA7N80P | Littelfuse | Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N80P | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA7N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 7A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V | auf Bestellung 1207 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA7N80P-TRL | Littelfuse Inc. | Description: MOSFET N-CH 800V 7A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA7N80P-TRL | IXYS | MOSFETs IXFA7N80P TRL | Produkt ist nicht verfügbar | |||||||||||||||
IXFA80N25X3 | Littelfuse Inc. | Description: MOSFET N-CH 250V 80A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V | auf Bestellung 2586 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA80N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 80A Power dissipation: 390W Case: TO263 On-state resistance: 16mΩ Mounting: SMD Gate charge: 83nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA80N25X3 | Littelfuse | Trans MOSFET N-CH 250V 80A 3-Pin(2+Tab) D2PAK | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFA80N25X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 80A Power dissipation: 390W Case: TO263 On-state resistance: 16mΩ Mounting: SMD Gate charge: 83nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 120ns | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA80N25X3 | IXYS | MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET | auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA80N25X3-TRL | Littelfuse Inc. | Description: MOSFET N-CH 250V 80A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V | auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA80N25X3-TRL | Littelfuse Inc. | Description: MOSFET N-CH 250V 80A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA80N25X3-TRL | Littelfuse | Trans MOSFET N-CH 250V 80A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFA80N25X3-TRL | IXYS | MOSFET MOSFET DISC X4 | auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA80N25X3. | LITTELFUSE | Description: LITTELFUSE - IXFA80N25X3. - MOSFET, N-CH, 250V, 80A, TO-263 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 250V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 390W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HiPERFET X3 Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) | auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFA80N25X3TRL | IXYS | Description: MOSFET N-CH 250V 80A X3CLASS TO- | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA80N25X3TRL | IXYS | Description: MOSFET N-CH 250V 80A X3CLASS TO- | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFA8N50P3 | IXYS | Description: MOSFET N-CH 500V 8A TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
IXFA8N50P3 | IXYS | MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode | Produkt ist nicht verfügbar | |||||||||||||||
IXFA8N65X2 | IXYS | MOSFET 650V/8A TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA8N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 105ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 444 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA8N65X2 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 105ns | auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA8N85XHV | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO263HV Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 125ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA8N85XHV | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO263HV Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 125ns | auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA8N85XHV | IXYS | MOSFET 850V/8A U-Junc X-Cla ss Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFA8N85XHV | Littelfuse Inc. | Description: MOSFET N-CH 850V 8A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA90N20X3 | IXYS | MOSFETs TO263 200V 90A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3 | Littelfuse Inc. | Description: MOSFET N-CH 200V 90A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3 | Littelfuse | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3 | IXYS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 85ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA90N20X3-TRL | Littelfuse | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3-TRL | Littelfuse | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3-TRL | Littelfuse Inc. | Description: MOSFET N-CH 200V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3TRL | IXYS | Description: MOSFET N-CH 200V 90A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
IXFA90N20X3TRL | IXYS | MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P | Littelfuse Inc. | Description: MOSFET N-CH 500V 100A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V | auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB100N50P | Littelfuse | Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P | Littelfuse | Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P | LITTELFUSE | Description: LITTELFUSE - IXFB100N50P - Leistungs-MOSFET, n-Kanal, 500 V, 100 A, 0.049 ohm, PLUS264, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.89kW Bauform - Transistor: PLUS264 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.049ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFB100N50P | IXYS | MOSFETs 100 Amps 500V 0.05 Ohms Rds | auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB100N50P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P | Littelfuse | Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50P 497 | auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
IXFB100N50Q3 | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 49mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50Q3 | IXYS | Description: MOSFET N-CH 500V 100A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB100N50Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 49mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB100N50 | IXYS | 08+ | auf Bestellung 1540 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFB110N60P3 | Littelfuse Inc. | Description: MOSFET N-CH 600V 110A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V | auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB110N60P3 | Littelfuse | Trans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB110N60P3 | IXYS | MOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB110N60P3 | Littelfuse | Trans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB110N60P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB110N60P3 | Littelfuse | Trans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB110N60P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB120N50P2 | IXYS | MOSFET PolarP2 Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFB120N50P2 | Littelfuse | Trans MOSFET N-CH 500V 120A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB120N50P2 | IXYS | Description: MOSFET N-CH 500V 120A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB132N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB132N50P3 | Littelfuse Inc. | Description: MOSFET N-CH 500V 132A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V | auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB132N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB132N50P3 | IXYS | MOSFETs 500V 132A 0.039Ohm PolarP3 Power MOSFET | auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB132N50P3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFB132N50P3 - Leistungs-MOSFET, n-Kanal, 500 V, 132 A, 0.039 ohm, TO-264, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 132 Qualifikation: - Verlustleistung Pd: 1.89 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 1.89 Bauform - Transistor: TO-264 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.039 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.039 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFB132N50P3 Produktcode: 94706 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||
IXFB132N50P3 | Littelfuse | Trans MOSFET N-CH 500V 132A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB150N65X2 | Littelfuse | Trans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 4200 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB150N65X2 | IXYS | Description: MOSFET N-CH 650V 150A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V | auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB150N65X2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB150N65X2 | Littelfuse | Trans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 4200 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB150N65X2 | IXYS | MOSFETs MOSFET 650V/150A Ultra Junction X2 | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB150N65X2 | LITTELFUSE | Description: LITTELFUSE - IXFB150N65X2 - Leistungs-MOSFET, n-Kanal, 650 V, 150 A, 0.017 ohm, PLUS264, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.56kW Bauform - Transistor: PLUS264 Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe X2-Class HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFB150N65X2 | Littelfuse | Trans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB150N65X2 | Littelfuse | Trans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB150N65X2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB170N30P | IXYS | MOSFET Polar Power MOSFET HiPerFET | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB170N30P | Littelfuse | Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB170N30P | Littelfuse | Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB170N30P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB170N30P | IXYS | Description: MOSFET N-CH 300V 170A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB170N30P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB170N30P | Littelfuse | Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N20P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 210A Power dissipation: 1.5kW Case: PLUS264™ On-state resistance: 10.5mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N20P | Littelfuse Inc. | Description: MOSFET N-CH 200V 210A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V | auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB210N20P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 210A Power dissipation: 1.5kW Case: PLUS264™ On-state resistance: 10.5mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N20P | IXYS | MOSFET 210 Amps 200V 0.0105 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N30P3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFB210N30P3 - Leistungs-MOSFET, n-Kanal, 300 V, 210 A, 0.0145 ohm, TO-264, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 300V rohsCompliant: YES Dauer-Drainstrom Id: 210A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.89kW Bauform - Transistor: TO-264 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0145ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFB210N30P3 | IXYS | MOSFETs N-Channel: Power MOSFET w/Fast Diode | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB210N30P3 | Littelfuse | Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N30P3 | Littelfuse | Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N30P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: THT Gate charge: 268nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N30P3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 210A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V | auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB210N30P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: THT Gate charge: 268nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB210N30P3 | Littelfuse | Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB300N10P | Littelfuse | Trans MOSFET N-CH 100V 300A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB300N10P | Littelfuse | Trans MOSFET N-CH 100V 300A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB300N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 1.5kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 279nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB300N10P | IXYS | Description: MOSFET N-CH 100V 300A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB300N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 1.5kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 279nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB300N10P | IXYS | MOSFET POLAR PWR MOSFET 100V, 300A | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB30N120P | Littelfuse Inc. | Description: MOSFET N-CH 1200V 30A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V | auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB30N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 310nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB30N120P | IXYS | MOSFETs 30 Amps 1200V 0.35 Rds | auf Bestellung 798 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB30N120P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFB30N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 30 Qualifikation: - Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 6.5 Verlustleistung: 1.25 Bauform - Transistor: PLUS264 Anzahl der Pins: 3 Produktpalette: Polar HiPerFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.35 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.35 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | |||||||||||||||
IXFB30N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB30N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 310nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB30N120Q2 | IXYS | Description: MOSFET N-CH 1200V 30A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Supplier Device Package: ISOPLUS264™ Part Status: Active Drain to Source Voltage (Vdss): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB38N100Q2 | IXYS | Description: MOSFET N-CH 1000V 38A PLUS264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB38N100Q2 | Littelfuse | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB38N100Q2 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFB38N100Q2 | IXYS | MOSFET 38 Amps 1000V 0.25 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB40N110P | Littelfuse | Trans MOSFET N-CH 1.1KV 40A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB40N110P | IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB40N110P | IXYS | Description: MOSFET N-CH 1100V 40A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1100 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V | auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB40N110Q3 | IXYS | MOSFET MSFT N-CH HIPERFET-Q3 3&44 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB40N110Q3 | IXYS | IXFB40N110Q3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IXFB40N110Q3 | IXYS | Description: MOSFET N-CH 1100V 40A PLUS264 | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB40N110Q3 | Littelfuse | Trans MOSFET N-CH 1.1KV 40A | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFB44N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 44 A, 0.22 ohm, PLUS264, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 44 Qualifikation: - Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 6.5 Verlustleistung: 1.25 Bauform - Transistor: PLUS264 Anzahl der Pins: 3 Produktpalette: Polar HiPerFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.22 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.22 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P Produktcode: 199488 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFB44N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | IXYS | MOSFETs 44 Amps 1000V 0.22 Rds | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB44N100P | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100P | Littelfuse Inc. | Description: MOSFET N-CH 1000V 44A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB44N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 264nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | IXYS | MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A | auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB44N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 264nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | Littelfuse Inc. | Description: MOSFET N-CH 1000V 44A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB44N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB50N80Q2 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFB50N80Q2 | IXYS | Description: MOSFET N-CH 800V 50A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB50N80Q2 | Littelfuse | Trans MOSFET N-CH 800V 50A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB50N80Q2 | IXYS | 07+ | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFB50N80Q2 | IXYS | MOSFET 50 Amps 800V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | Littelfuse | Trans MOSFET N-CH 900V 52A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | Littelfuse | Trans MOSFET N-CH 900V 52A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | IXYS | Description: MOSFET N-CH 900V 52A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB52N90P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFB52N90P - Leistungs-MOSFET, n-Kanal, 900 V, 52 A, 0.16 ohm, PLUS264, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 900 Dauer-Drainstrom Id: 52 Qualifikation: - Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 3.5 Verlustleistung: 1.25 Bauform - Transistor: PLUS264 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.16 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.16 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFB60N80P Produktcode: 154209 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFB60N80P | IXYS | MOSFETs 60 Amps 800V 0.14 Rds | auf Bestellung 75 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFB60N80P | Littelfuse | Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB60N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 60A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFB60N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 60A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V | auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB60N80P | Littelfuse | Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB60N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 60A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB60N80P | Littelfuse | Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB62N80Q3 | Littelfuse | Trans MOSFET N-CH 800V 62A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB62N80Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 62A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB62N80Q3 | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB62N80Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 62A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB62N80Q3 | Littelfuse Inc. | Description: MOSFET N-CH 800V 62A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB70N100X | IXYS | MOSFET 1000V 70A PLUS264 Power MOSFET | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB70N100X | Littelfuse | X-Class Hiperfet Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFB70N100X | Littelfuse Inc. | Description: MOSFET N-CH 1000V 70A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Power Dissipation (Max): 1785W (Tc) Vgs(th) (Max) @ Id: 6V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V | auf Bestellung 1092 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB70N60Q2 | IXYS | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFB70N60Q2 | IXYS | Description: MOSFET N-CH 600V 70A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 35A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB70N60Q2 | IXYS | MOSFET 70 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB70N60QZ | IXYS | 09+ | auf Bestellung 109 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFB72N55Q2 | IXYS | MOSFET 72 Amps 550V 0.07 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB72N55Q2 | IXYS | Description: MOSFET N-CH 550V 72A PLUS264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB80N50Q2 | IXYS | MOSFET 80 Amps 500V 0.06 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB80N50Q2 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFB80N50Q2 | IXYS | Description: MOSFET N-CH 500V 80A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFB80N50Q2 Produktcode: 22118 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFB80N50Q2 | Littelfuse | Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | Littelfuse | Trans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | Littelfuse | Trans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™ Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.25kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | IXYS | MOSFET 82 Amps 600V 0.75 Ohm Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™ Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.25kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60P | IXYS | Description: MOSFET N-CH 600V 82A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V | auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB82N60Q3 | Littelfuse | Trans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 82A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB82N60Q3 | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | Produkt ist nicht verfügbar | |||||||||||||||
IXFB82N60Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 82A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB82N60Q3 | IXYS | Description: MOSFET N-CH 600V 82A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB90N85X | IXYS | Description: MOSFET N-CH 850V 90A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V Power Dissipation (Max): 1785W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB90N85X | Littelfuse | Trans MOSFET N-CH 850V 90A 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
IXFB90N85X | Littelfuse | Trans MOSFET N-CH 850V 90A 3-Pin(3+Tab) PLUS 264 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB90N85X | IXYS | MOSFET 850V/90A Ultra Junction X-Class | Produkt ist nicht verfügbar | |||||||||||||||
IXFB90N85X | IXYS | IXFB90N85X THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
IXFC10N80P | IXYS | Description: MOSFET N-CH 800V 5A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drain to Source Voltage (Vdss): 800 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC110N10P | IXYS | Description: MOSFET N-CH 100V 60A ISOPLUS220 Packaging: Box Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 55A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC12N80P | IXYS | Description: MOSFET N-CH 800V 7A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 930mOhm @ 6A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC13N50 | IXYS | Description: MOSFET N-CH 500V 12A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC14N60P | IXYS | Description: MOSFET N-CH 600V 8A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC14N80P | IXYS | Description: MOSFET N-CH 800V 8A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC15N80Q | IXYS | Description: MOSFET N-CH 800V 13A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC16N50P | IXYS | Description: MOSFET N-CH 500V 10A ISOPLUS220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC16N80P | IXYS | Description: MOSFET N-CH 800V 9A ISOPLUS220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC20N80P | IXYS | Description: MOSFET N-CH 800V 11A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC22N60P | IXYS | Description: MOSFET N-CH 600V 12A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC24N50 | IXYS | Description: MOSFET N-CH 500V 21A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC24N50Q | IXYS | Description: MOSFET N-CH 500V 21A ISOPLUS220 Packaging: Bulk Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC26N50 | IXYS | Description: MOSFET N-CH 500V 23A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC26N50P | IXYS | Description: MOSFET N-CH 500V 15A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC30N60P | Littelfuse | Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) ISOPLUS 220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC30N60P | IXYS | MOSFET 600V 30A | Produkt ist nicht verfügbar | |||||||||||||||
IXFC30N60P | IXYS | Description: MOSFET N-CH 600V 15A ISOPLUS220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC36N50P | IXYS | Description: MOSFET N-CH 500V 19A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC36N50P | Littelfuse | Trans MOSFET N-CH Si 500V 19A 3-Pin(3+Tab) ISOPLUS 220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC40N30Q | IXYS | Description: MOSFET N-CH 300V ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drain to Source Voltage (Vdss): 300 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC52N30P | IXYS | Description: MOSFET N-CH 300V 24A ISOPLUS220 Packaging: Box Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC60N20 | IXYS | Description: MOSFET N-CH 200V 60A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC74N20P | IXYS | Description: MOSFET N-CH 200V 35A ISOPLUS220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFC80N08 | IXYS | Description: MOSFET N-CH 80V 80A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC80N085 | IXYS | Description: MOSFET N-CH 85V 80A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC80N10 | IXYS | MOSFET 100 Amps 100V 0.0125 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFC80N10 | IXYS | Description: MOSFET N-CH 100V 80A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 40A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFC96N15P | IXYS | MOSFET 42 Amps 150V 0.024 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFC96N15P | IXYS | Description: MOSFET N-CH 150V 42A ISOPLUS220 | Produkt ist nicht verfügbar | |||||||||||||||
IXFD15N100-8X | IXYS | Description: MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||
IXFD23N60Q-72 | IXYS | Description: MOSFET N-CHANNEL 600V DIE | Produkt ist nicht verfügbar | |||||||||||||||
IXFD24N50Q-72 | IXYS | Description: MOSFET N-CH Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||
IXFD26N50Q-72 | IXYS | Description: MOSFET N-CHANNEL 500V DIE Packaging: Bulk Package / Case: Die Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: Die Part Status: Obsolete Drain to Source Voltage (Vdss): 500 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFD26N60Q-8XQ | IXYS | Description: MOSFET N-CH Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||
IXFD40N30Q-72 | IXYS | Description: MOSFET N-CHANNEL 300V DIE Packaging: Bulk Package / Case: Die Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: Die Part Status: Obsolete Drain to Source Voltage (Vdss): 300 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE180N10 | IXYS | Description: MOSFET N-CH 100V 176A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE180N20 | IXYS | MOSFET Modules 180 Amps 200V 0.01 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE180N20 | IXYS | Description: MOSFET N-CH 200V 158A SOT227B | Produkt ist nicht verfügbar | |||||||||||||||
IXFE23N100 | IXYS | Description: MOSFET N-CH 1000V 21A SOT227B Packaging: Box Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 11.5A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE24N100 | IXYS | MODULE | auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFE24N100 | IXYS | MOSFET Modules 22 Amps 1000V 0.39 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE24N100 | IXYS | Description: MOSFET N-CH 1000V 22A ISOPLUS227 | Produkt ist nicht verfügbar | |||||||||||||||
IXFE34N100 | IXYS | Description: MOSFET N-CH 1000V 30A ISOPLUS227 | Produkt ist nicht verfügbar | |||||||||||||||
IXFE36N100 | IXYS | Description: MOSFET N-CH 1000V 33A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 18A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE36N100 | IXYS | Discrete Semiconductor Modules 33 Amps 1000V 0.24 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE39N90 | IXYS | MOSFET Modules 34 Amps 900V 0.22 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE39N90 | IXYS | Description: MOSFET N-CH 900V 34A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N50Q | IXYS | Description: MOSFET N-CH 500V 39A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N50Q | IXYS | Discrete Semiconductor Modules 44 Amps 500V 0.12 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N50QD2 | IXYS | Discrete Semiconductor Modules 44 Amps 500V 0.12 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N50QD2 | IXYS | Description: MOSFET N-CH 500V 39A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N50QD3 | IXYS | Description: MOSFET N-CH 500V 39A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N60 | IXYS | Description: MOSFET N-CH 600V 41A SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
IXFE44N60 | IXYS | Discrete Semiconductor Modules 41 Amps 600V 0.13 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE48N50Q | IXYS | MOSFET Modules 41 Amps 500V 0.11 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE48N50Q | IXYS | Description: MOSFET N-CH 500V 41A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE48N50QD2 | IXYS | MOSFET Modules 41 Amps 500V 0.11 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE48N50QD2 | IXYS | Description: MOSFET N-CH 500V 41A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE48N50QD3 | IXYS | Description: MOSFET N-CH 500V 41A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE50N50 | IXYS | Description: MOSFET N-CH 500V 47A SOT227B Packaging: Box Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE55N50 | IXYS | Description: MOSFET N-CH 500V 47A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE55N50 | IXYS | Discrete Semiconductor Modules 52 Amps 500V 0.08 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE73N30Q | IXYS | Discrete Semiconductor Modules 66 Amps 300V 0.046 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFE73N30Q | IXYS | Description: MOSFET N-CH 300V 66A SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
IXFE80N50 | IXYS | Description: MOSFET N-CH 500V 72A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFE80N50 | IXYS | Discrete Semiconductor Modules 72 Amps 500V 0.055 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFF24N100 | IXYS | Description: MOSFET N-CH 1000V 22A I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||
IXFG55N50 | IXYS | MOSFET 48 Amps 500V 0.1 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFG55N50 | IXYS | Description: MOSFET N-CH 500V 48A ISO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: ISO264™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N25P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Kind of channel: enhanced Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH100N25P | Littelfuse | Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N25P | Littelfuse | Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N25P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Kind of channel: enhanced Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH100N25P | IXYS | MOSFETs 100 Amps 250V 0.027 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N25P | Littelfuse Inc. | Description: MOSFET N-CH 250V 100A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V | auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH100N30X3 | Littelfuse | Trans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3 Technology: HiPerFET™; X3-Class Mounting: THT Case: TO247-3 Reverse recovery time: 130ns Kind of package: tube Power dissipation: 48W Polarisation: unipolar Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 300V Drain current: 100A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH100N30X3 | Littelfuse | Trans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH100N30X3 | IXYS | MOSFETs TO247 300V 100A N-CH X3CLASS | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH100N30X3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V | auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH100N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3 Technology: HiPerFET™; X3-Class Mounting: THT Case: TO247-3 Reverse recovery time: 130ns Kind of package: tube Power dissipation: 48W Polarisation: unipolar Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 300V Drain current: 100A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH100N30X3 | Littelfuse | Trans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH102N15T | IXYS | MOSFET 102 Amps 0V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH102N15T | IXYS | Description: MOSFET N-CH 150V 102A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100 | Ixys Corporation | Trans MOSFET N-CH Si 1KV 10A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100 | IXYS | MOSFET 1KV 10A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100 | IXYS | Description: MOSFET N-CH 1KV 10A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100P | IXYS | MOSFETs 10 Amps 1000V | auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH10N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Reverse recovery time: 300ns Kind of package: tube Power dissipation: 380W Polarisation: unipolar Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 10A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH10N100P | Littelfuse Inc. | Description: MOSFET N-CH 1000V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V | auf Bestellung 614 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH10N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Reverse recovery time: 300ns Kind of package: tube Power dissipation: 380W Polarisation: unipolar Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 10A On-state resistance: 1.4Ω Type of transistor: N-MOSFET | auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH10N100P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH10N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 10 A, 1.4 ohm, TO-247AD, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6.5V euEccn: NLR Verlustleistung: 380W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: Polar HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (12-Jan-2017) | auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH10N100P | Littelfuse | Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100P | Littelfuse | Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100Q | IXYS | MOSFETs 12 Amps 1000V 1.05 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N100Q | IXYS | Description: MOSFET N-CH 1000V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH10N80P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH10N80P - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 1.1 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Polar HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.1ohm SVHC: No SVHC (12-Jan-2017) | auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH10N80P | Littelfuse | Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N80P | Littelfuse | Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N80P | IXYS | MOSFETs 10 Amps 800V 1.1 Rds | auf Bestellung 600 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFH10N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V | auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH10N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH10N90 | IXYS | MOSFET 10 Amps 900V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH10N90 | IXYS | Description: MOSFET N-CH 900V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH110N10P - Leistungs-MOSFET, PolarFET, n-Kanal, 100 V, 110 A, 0.015 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 110 hazardous: false Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 480 Gate-Source-Schwellenspannung, max.: 5 euEccn: NLR Verlustleistung: 480 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.015 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | IXYS | MOSFETs 110 Amps 100V 0.015 Rds | auf Bestellung 4555 Stücke: Lieferzeit 318-322 Tag (e) |
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IXFH110N10P | Littelfuse Inc. | Description: MOSFET N-CH 100V 110A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | Littelfuse | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N10P | Littelfuse | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N15T2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Power dissipation: 480W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH110N15T2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Power dissipation: 480W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N15T2 | IXYS | MOSFET 110 Amps 150V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N15T2 | IXYS | Description: MOSFET N-CH 150V 110A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V | auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH110N15T2 | Littelfuse | Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N25T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 157nC Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 250V Drain current: 110A On-state resistance: 26mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH110N25T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 157nC Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 250V Drain current: 110A On-state resistance: 26mΩ Type of transistor: N-MOSFET | auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N25T | IXYS | MOSFET 110 Amps 0V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH110N25T | Littelfuse Inc. | Description: MOSFET N-CH 250V 110A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH11N80 | IXYS | MOSFETs 11 Amps 800V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH11N80 | IXYS | Description: MOSFET N-CH 800V 11A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N15P | Littelfuse | Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH120N15P | Littelfuse | Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N15P | IXYS | MOSFETs 120 Amps 150V 0.016 Rds | auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N15P | Littelfuse Inc. | Description: MOSFET N-CH 150V 120A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V | auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N15P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH120N15P - Leistungs-MOSFET, PolarFET, n-Kanal, 150 V, 120 A, 0.016 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 150 Dauer-Drainstrom Id: 120 Qualifikation: - Verlustleistung Pd: 600 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 600 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.016 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.016 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N15P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH120N15P | Littelfuse | Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N15P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N15P | Littelfuse | Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 100ns | auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | Littelfuse | Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N20P | Littelfuse | Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N20P | IXYS | MOSFETs 120 Amps 200V 0.022 Rds | auf Bestellung 300 Stücke: Lieferzeit 318-322 Tag (e) |
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IXFH120N20P | Littelfuse Inc. | Description: MOSFET N-CH 200V 120A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V | auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N20P | Littelfuse | Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N20P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH120N20P - Leistungs-MOSFET, n-Kanal, 200 V, 120 A, 0.022 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 714W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm | auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH120N20P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH120N25T | Littelfuse | Trans MOSFET N-CH 250V 120A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N25T | IXYS | MOSFET Trench HiperFETs Power MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N25T | IXYS | Description: MOSFET N-CH 250V 120A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V | auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N25T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 890W Case: TO247-3 On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 108ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH120N25T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 890W Case: TO247-3 On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 108ns | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH120N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N25X3 | Littelfuse | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N25X3 | Littelfuse | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N25X3 | IXYS | MOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 1201 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N25X3 | Littelfuse Inc. | Description: MOSFET N-CH 250V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V | auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N30X3 | Littelfuse | Trans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N30X3 | Littelfuse | Trans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N30X3 | LITTELFUSE | Description: LITTELFUSE - IXFH120N30X3 - Leistungs-MOSFET, n-Kanal, 300 V, 120 A, 0.0086 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 300V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 735W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe X3-Class HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0086ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH120N30X3 | IXYS | MOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N30X3 | Littelfuse Inc. | Description: MOSFET N-CH 300V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH120N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH120N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH12N100 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH12N100 - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 12 Qualifikation: - Verlustleistung Pd: 300 Gate-Source-Schwellenspannung, max.: 4.5 Verlustleistung: 300 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.05 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.05 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100 | IXYS | MOSFET 1KV 12A | auf Bestellung 206 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N100 | IXYS | Description: MOSFET N-CH 1000V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100 | Ixys Corporation | Trans MOSFET N-CH Si 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100 | Littelfuse | Trans MOSFET N-CH Si 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100F | Ixys Corporation | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100F | Littelfuse | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100F | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH12N100F - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247AD, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 12 Qualifikation: - Verlustleistung Pd: 300 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 300 Bauform - Transistor: TO-247AD Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.05 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.05 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100F | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100F | Littelfuse Inc. | Description: MOSFET N-CH 1000V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V | auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N100F | Littelfuse | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100P | Littelfuse | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH12N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 12 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 436 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: Polar HiPerFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1.05 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 6.5 SVHC: No SVHC (16-Jan-2020) | auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH12N100P | IXYS | MOSFET 12 Amps 1000V | auf Bestellung 1102 Stücke: Lieferzeit 732-736 Tag (e) |
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IXFH12N100P | IXYS | Description: MOSFET N-CH 1000V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100P | Littelfuse | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100Q | Littelfuse | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N100Q | IXYS | Description: MOSFET N-CH 1000V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120 | Littelfuse | Trans MOSFET N-CH Si 1.2KV 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120 | IXYS | Description: MOSFET N-CH 1200V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120 | IXYS | MOSFET 12 Amps 1200V 1.3 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 543W Case: TO247-3 Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120P | IXYS | Description: MOSFET N-CH 1200V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH12N120P | IXYS | MOSFET 12 Amps 1200V 1.15 Rds | auf Bestellung 850 Stücke: Lieferzeit 566-570 Tag (e) |
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IXFH12N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH12N120P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH12N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 12 A, 1.35 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 12 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 543 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1.35 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 6.5 SVHC: No SVHC (12-Jan-2017) | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH12N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 543W Case: TO247-3 Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N50F | IXYS | MOSFET IXFH12N50F 500V 12A HIPERFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N50F | Littelfuse | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N50F | IXYS | Description: MOSFET N-CH 500V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N50F | Ixys Corporation | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247AD | auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH12N65X2 | IXYS | MOSFETs 650V/12A TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N80P | Littelfuse | Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N80P | IXYS | MOSFETs DIODE Id12 BVdass800 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.85Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.85Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90 | IXYS | Description: MOSFET N-CH 900V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90 | IXYS | MOSFETs 900V 12A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 12A Power dissipation: 380W Case: TO247-3 On-state resistance: 1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90P | Littelfuse | Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 12A Power dissipation: 380W Case: TO247-3 On-state resistance: 1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH12N90P - Leistungs-MOSFET, n-Kanal, 900 V, 12 A, 0.9 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 900 Dauer-Drainstrom Id: 12 Qualifikation: - Verlustleistung Pd: 380 Gate-Source-Schwellenspannung, max.: 3.5 Verlustleistung: 380 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.9 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.9 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90P | Littelfuse Inc. | Description: MOSFET N-CH 900V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V | auf Bestellung 1749 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N90P | IXYS | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N90P | Littelfuse | Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH12N90Q | IXYS | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH130N15X3 | Littelfuse Inc. | Description: MOSFET N-CH 150V 130A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V | auf Bestellung 1331 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH130N15X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns Power dissipation: 390W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH130N15X3 | Littelfuse | Trans MOSFET N-CH 150V 130A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH130N15X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH130N15X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns Power dissipation: 390W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH13N100 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFH13N100 | IXYS | MOSFET 13 Amps 1000V 0.9 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N100 | IXYS | Description: MOSFET N-CH 1000V 12.5A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N50 | IXYS | Description: MOSFET N-CH 500V 13A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N50 Transistor Produktcode: 79556 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH13N80 | Ixys Corporation | Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N80 | IXYS | Description: MOSFET N-CH 800V 13A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N80 | IXYS | MOSFET 800V 13A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N80Q | IXYS | Description: MOSFET N-CH 800V 13A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N80Q | IXYS | MOSFET 13 Amps 800V 0.8 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N80Q | IXYS | 09+ SOT23 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
IXFH13N90 | IXYS | MOSFETs 13 Amps 900V 0.8 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH13N90 | IXYS | Description: MOSFET N-CH 900V 13A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH140N10P | Littelfuse | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247 | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH140N10P | Littelfuse | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH140N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH140N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH140N10P | Littelfuse Inc. | Description: MOSFET N-CH 100V 140A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V | auf Bestellung 763 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH140N10P | Littelfuse | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247 | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH140N10P | IXYS | MOSFETs 140 Amps 100V 0.011 Rds | auf Bestellung 2314 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH140N20X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH140N20X3 | Littelfuse Inc. | Description: MOSFET N-CH 200V 140A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V | auf Bestellung 528 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH140N20X3 | Littelfuse | Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH140N20X3 | IXYS | MOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH140N20X3 | Littelfuse | Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH140N20X3 | Littelfuse | Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH140N20X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns | auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH14N100 | IXYS | Description: MOSFET N-CH 1000V 14A TO247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q | IXYS | Description: MOSFET N-CH 1000V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q2 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH14N100Q2 - Leistungs-MOSFET, n-Kanal, 1 kV, 14 A, 0.9 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 14 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 500 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.9 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q2 | Littelfuse | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q2 | Ixys Corporation | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q2 | IXYS | MOSFETs 14 Amps 1000V 0.90 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N100Q2 | IXYS | Description: MOSFET N-CH 1000V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P | Littelfuse | Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P | IXYS | MOSFETs 600V 14A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P | Littelfuse Inc. | Description: MOSFET N-CH 600V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V | auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH14N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P3 | IXYS | MOSFET Polar3 HiPerFETs Power MOSFETs | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
IXFH14N60P3 | IXYS | Description: MOSFET N-CH 600V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V Power Dissipation (Max): 327W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N60P3 | Littelfuse | Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N80 | IXYS | MOSFETs 14 Amps 800V 0.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N80 | IXYS | Description: MOSFET N-CH 800V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N80P | Littelfuse | Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH14N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH14N80P | Littelfuse | Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N80P | IXYS | MOSFETs DIODE Id14 BVdass800 | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH14N80P | Littelfuse Inc. | Description: MOSFET N-CH 800V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V | auf Bestellung 1018 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH14N80P | Littelfuse | Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N85X | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N85X | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N85X | Littelfuse | Trans MOSFET N-CH 850V 14A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH14N85X | IXYS | MOSFETs MSFT N-CH ULTRA JNCT X3&44 | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH14N85X | Littelfuse Inc. | Description: MOSFET N-CH 850V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V | auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N15P | Littelfuse | Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247 | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N15P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N15P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N15P | Littelfuse | Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N15P | Littelfuse | Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N15P | IXYS | MOSFET 170 Amps 150V 0.013 Rds | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N15P | Littelfuse Inc. | Description: MOSFET N-CH 150V 150A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N15P | Littelfuse | Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N17T | IXYS | MOSFETs 150 Amps 175V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N17T | IXYS | Description: MOSFET N-CH 175V 150A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 175 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N17T(Transistor) Produktcode: 48320 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH150N17T2 | Littelfuse | Trans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N17T2 | Littelfuse | Trans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N17T2 Produktcode: 177347 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH150N17T2 | LITTELFUSE | Description: LITTELFUSE - IXFH150N17T2 - Leistungs-MOSFET, n-Kanal, 175 V, 150 A, 0.012 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 175V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 880W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: To Be Advised | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH150N17T2 | Littelfuse | Trans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N17T2 | IXYS | MOSFETs 175V 150A | auf Bestellung 175 Stücke: Lieferzeit 199-203 Tag (e) |
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IXFH150N17T2 | Littelfuse Inc. | Description: MOSFET N-CH 175V 150A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 175 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N20T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns Case: TO247-3 Mounting: THT Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Reverse recovery time: 100ns Power dissipation: 890W On-state resistance: 15mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 177nC Kind of channel: enhanced Drain-source voltage: 200V Drain current: 150A Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH150N20T | IXYS | MOSFETs Trench HiperFETs Power MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N20T | Littelfuse Inc. | Description: MOSFET N-CH 200V 150A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V | auf Bestellung 892 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N20T | Littelfuse | Trans MOSFET N-CH 200V 150A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N20T | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns Case: TO247-3 Mounting: THT Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Reverse recovery time: 100ns Power dissipation: 890W On-state resistance: 15mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 177nC Kind of channel: enhanced Drain-source voltage: 200V Drain current: 150A | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N25X3 | Littelfuse | Trans MOSFET N-CH 250V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH150N25X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N25X3 | Littelfuse Inc. | Description: MOSFET N-CH 250V 150A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V | auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N25X3HV | IXYS | Description: MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | IXYS | Description: MOSFET N-CH 300V 150A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH150N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | Littelfuse | Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | Littelfuse | Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH150N30X3 | Littelfuse | Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100 | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100 | IXYS | Description: MOSFET N-CH 1000V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
IXFH15N100P | Littelfuse Inc. | Description: MOSFET N-CH 1000V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 543W Case: TO247-3 On-state resistance: 760mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100P | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100P | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100P | IXYS | MOSFETs 15 Amps 1000V 0.76 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 543W Case: TO247-3 On-state resistance: 760mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100Q | IXYS | Description: MOSFET N-CH 1000V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH15N100Q3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH15N100Q3 - Leistungs-MOSFET, n-Kanal, 1 kV, 15 A, 1.05 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6.5V euEccn: NLR Verlustleistung: 690W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Q3-Class HiperFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.05ohm SVHC: No SVHC (12-Jan-2017) | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH15N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100Q3 | IXYS | MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A | auf Bestellung 300 Stücke: Lieferzeit 427-431 Tag (e) |
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IXFH15N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH15N100Q3 | Littelfuse Inc. | Description: MOSFET N-CH 1000V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH15N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH15N60 | IXYS | Description: MOSFET N-CH 600V 15A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N60 | Littelfuse | Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N60 | IXYS | MOSFETs 15 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | Littelfuse | Trans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | Littelfuse | Trans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | IXYS | MOSFETs 800V 15A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | IXYS | Description: MOSFET N-CH 800V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH15N80 - Leistungs-MOSFET, n-Kanal, 800 V, 15 A, 0.6 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800 Dauer-Drainstrom Id: 15 Qualifikation: - Verlustleistung Pd: 300 Gate-Source-Schwellenspannung, max.: 4.5 Verlustleistung: 300 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.6 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.6 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80 | Littelfuse | Trans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80Q | Ixys Corporation | Trans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80Q | IXYS | MOSFETs 800V 15A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80Q Produktcode: 104305 | Transistoren > MOSFET N-CH ZCODE: 8541290010 | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH15N80Q | Littelfuse | Trans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH15N80Q | IXYS | Description: MOSFET N-CH 800V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH15N80Q | Littelfuse | Trans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH15N80Q | Littelfuse | Trans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH1606 Produktcode: 128639 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH160N15T | Littelfuse | Trans MOSFET N-CH 150V 160A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH160N15T | IXYS | MOSFETs 160 Amps 150V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH160N15T | Littelfuse Inc. | Description: MOSFET N-CH 150V 160A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH160N15T2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Power dissipation: 880W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 253nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH160N15T2 | IXYS | MOSFET Trench T2 HiperFET Power MOSFET | auf Bestellung 300 Stücke: Lieferzeit 199-203 Tag (e) |
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IXFH160N15T2 Produktcode: 126302 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH160N15T2 | Littelfuse Inc. | Description: MOSFET N-CH 150V 160A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH160N15T2 | IXYS/Littelfuse | N-канальний ПТ; Udss, В = 150; Id = 160 А; Ciss, пФ @ Uds, В = 15000 @ 25; Qg, нКл = 253 @ 10 В; Rds = 9 мОм @ 80 A, 10 В; Ugs(th) = 4,5 В @ 1000 мкА; Р, Вт = 880 Вт; Тексп, °C = -55...+175; Тип монт. = вивідний; TO-247-3 | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH160N15T2 | Littelfuse | Trans MOSFET N-CH 150V 160A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH160N15T2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Power dissipation: 880W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 253nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH16N120P | Littelfuse Inc. | Description: MOSFET N-CH 1200V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | LITTELFUSE | Description: LITTELFUSE - IXFH16N120P - MOSFET, N-CH, 1.2KV, 16A, TO-247 Transistormontage: Through Hole Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 16 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 660 Bauform - Transistor: TO-247 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: Polar HiPerFET Series Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.95 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 6.5 SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO247-3 On-state resistance: 0.95Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | Littelfuse | Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO247-3 On-state resistance: 0.95Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N120P | IXYS | MOSFETs 1 | auf Bestellung 300 Stücke: Lieferzeit 517-521 Tag (e) |
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IXFH16N120P | Ixys Corporation | Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH16N50P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P | IXYS | MOSFETs 500V 16A | auf Bestellung 5090 Stücke: Lieferzeit 318-322 Tag (e) |
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IXFH16N50P | Littelfuse Inc. | Description: MOSFET N-CH 500V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V | auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH16N50P | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P3 | Littelfuse Inc. | Description: MOSFET N-CH 500V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH16N50P3 | Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N50P3 | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N60P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO247-3 On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N60P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO247-3 On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N60P3 | Littelfuse | MOSFETs IXFH16N60P3 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N60P3 | Littelfuse Inc. | Description: MOSFET N-CH 600V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V Power Dissipation (Max): 347W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N80P | IXYS | MOSFET 16 Amps 800V 0.6 Rds | auf Bestellung 300 Stücke: Lieferzeit 332-336 Tag (e) |
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IXFH16N80P | IXYS | Description: MOSFET N-CH 800V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V | auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH16N80P | Littelfuse | Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N80P | Littelfuse | Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH16N80P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH16N80P - Leistungs-MOSFET, n-Kanal, 800 V, 16 A, 0.6 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 460W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.6ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH16N90Q | IXYS | MOSFET 16 Amps 900V 0.65 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH16N90Q Produktcode: 157422 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
IXFH16N90Q | IXYS | Description: MOSFET N-CH 900V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N10P | Littelfuse | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH170N10P | Littelfuse | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH170N10P | Ixys Corporation | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N10P | IXYS | MOSFETs 170 Amps 100V 0.009 Rds | auf Bestellung 588 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH170N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N10P | Littelfuse | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH170N10P | Littelfuse Inc. | Description: MOSFET N-CH 100V 170A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Power Dissipation (Max): 715W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V | auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH170N10P | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH170N10P - Leistungs-MOSFET, PolarFET, n-Kanal, 100 V, 170 A, 0.009 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 714W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH170N10P | Littelfuse | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N10P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N10P | Ixys Corporation | Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N15X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N15X3 | Littelfuse Inc. | Description: MOSFET N-CH 150V 170A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N15X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N15X3 | IXYS | MOSFETs TO247 150V 170A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N25X3 | LITTELFUSE | Description: LITTELFUSE - IXFH170N25X3 - Leistungs-MOSFET, n-Kanal, 250 V, 170 A, 0.0061 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 250 Dauer-Drainstrom Id: 170 Qualifikation: - MSL: - Verlustleistung Pd: 890 Gate-Source-Schwellenspannung, max.: 4.5 Verlustleistung: 890 Bauform - Transistor: TO-247 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: Produktreihe X3-Class HiPerFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0061 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0061 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH170N25X3 | IXYS | MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE | auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH170N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Drain-source voltage: 250V Drain current: 170A Case: TO247-3 Polarisation: unipolar On-state resistance: 7.4mΩ Power dissipation: 890W Kind of channel: enhanced Gate charge: 0.19µC Reverse recovery time: 140ns Kind of package: tube Features of semiconductor devices: ultra junction x-class Mounting: THT Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N25X3 | Littelfuse Inc. | Description: MOSFET N-CH 250V 170A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V | auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH170N25X3 | Littelfuse | Trans MOSFET N-CH 250V 170A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH170N25X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Drain-source voltage: 250V Drain current: 170A Case: TO247-3 Polarisation: unipolar On-state resistance: 7.4mΩ Power dissipation: 890W Kind of channel: enhanced Gate charge: 0.19µC Reverse recovery time: 140ns Kind of package: tube Features of semiconductor devices: ultra junction x-class Mounting: THT Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH1799 | IXYS | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
IXFH17N80Q | IXYS | Description: MOSFET N-CH 800V 17A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH17N80Q | IXYS | MOSFETs 17 Amps 800V 0.60 Rds | Produkt ist nicht verfügbar | |||||||||||||||
IXFH180N20X3 | Littelfuse | Trans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH180N20X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH180N20X3 | IXYS | MOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH180N20X3 | Littelfuse | Trans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH180N20X3 | Littelfuse | Trans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH180N20X3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH180N20X3 | LITTELFUSE | Description: LITTELFUSE - IXFH180N20X3 - Leistungs-MOSFET, n-Kanal, 200 V, 180 A, 0.0063 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 735W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe X3-Class HiPerFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0063ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH180N20X3 | Littelfuse Inc. | Description: MOSFET N-CH 200V 180A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V | auf Bestellung 542 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.66Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N100Q3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH18N100Q3 - Leistungs-MOSFET, n-Kanal, 1 kV, 18 A, 0.66 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6.5V euEccn: NLR Verlustleistung: 830W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.66ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH18N100Q3 | Littelfuse Inc. | Description: MOSFET N-CH 1000V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 25 V | auf Bestellung 694 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N100Q3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.66Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N100Q3 | IXYS | MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A | auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N100Q3 | Littelfuse | Trans MOSFET N-CH 1KV 18A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60P | Littelfuse Inc. | Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60P | Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH18N60P | IXYS | MOSFETs 600V 18A | auf Bestellung 2741 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N60P | Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60P | Littelfuse | Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH18N60X | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO247-3 On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH18N60X | IXYS | MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N60X | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO247-3 On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH18N60X | IXYS | Description: MOSFET N-CH 600V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N65X2 | Littelfuse Inc. | Description: MOSFET N-CH 650V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH18N65X2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N65X2 | IXYS | MOSFETs 650V/18A TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N65X2 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N65X3 | Littelfuse | MOSFETs TO247 650V 18A N-CH X3CLASS | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N65X3 | Littelfuse Inc. | Description: DISCRETE MOSFET 18A 650V X3 TO24 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N90P | Littelfuse | Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N90P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N90P | Littelfuse Inc. | Description: MOSFET N-CH 900V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH18N90P | IXYS | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | auf Bestellung 2382 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N100P | Littelfuse Inc. | Description: MOSFET N-CH 1000V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V | auf Bestellung 928 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N100P | IXYS | MOSFETs 20 Amps 1000V 1 Rds | auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N100P | Littelfuse | Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N100P | Littelfuse | Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N100P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N100P | Littelfuse | Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N50P3 | IXYS | MOSFETs Polar3 HiPerFET Power MOSFET | auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N50P3 | Littelfuse | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N50P3 | Littelfuse | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH20N50P3 | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH20N50P3 | Littelfuse Inc. | Description: MOSFET N-CH 500V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N50P3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXFH20N50P3 - Leistungs-MOSFET, n-Kanal, 500 V, 20 A, 0.3 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 20 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 380 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.3 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (12-Jan-2017) | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
IXFH20N60 | IXYS | Description: MOSFET N-CH 600V 20A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N60 | IXYS | MOSFETs 600V 20A | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N60Q | IXYS | Description: MOSFET N-CH 600V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
IXFH20N80P | IXYS | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar |