IXFA6N120P Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 3684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.46 EUR |
50+ | 13.14 EUR |
100+ | 11.76 EUR |
500+ | 10.37 EUR |
1000+ | 9.34 EUR |
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Technische Details IXFA6N120P Littelfuse Inc.
Description: MOSFET N-CH 1200V 6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V.
Weitere Produktangebote IXFA6N120P nach Preis ab 10.05 EUR bis 16.58 EUR
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IXFA6N120P | Hersteller : IXYS |
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auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA6N120P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.75Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
IXFA6N120P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.75Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |