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IXFB132N50P3 Littelfuse Inc.
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Description: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 39.6 EUR |
25+ | 32.83 EUR |
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Technische Details IXFB132N50P3 Littelfuse Inc.
Description: MOSFET N-CH 500V 132A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 132A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Weitere Produktangebote IXFB132N50P3 nach Preis ab 29.27 EUR bis 43.26 EUR
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IXFB132N50P3 | Hersteller : IXYS |
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auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB132N50P3 Produktcode: 94706 |
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IXFB132N50P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB132N50P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFB132N50P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |