![IXFH170N25X3 IXFH170N25X3](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 300 Stücke:
Lieferzeit 234-238 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.26 EUR |
10+ | 33.25 EUR |
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Technische Details IXFH170N25X3 IXYS
Description: MOSFET N-CH 250V 170A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Weitere Produktangebote IXFH170N25X3 nach Preis ab 25.39 EUR bis 33.33 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH170N25X3 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH170N25X3 | Hersteller : Littelfuse |
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IXFH170N25X3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO247-3 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH170N25X3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO247-3 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
Produkt ist nicht verfügbar |