![IXFH110N10P IXFH110N10P](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 4343 Stücke:
Lieferzeit 318-322 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.44 EUR |
10+ | 12.3 EUR |
30+ | 9.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFH110N10P IXYS
Description: MOSFET N-CH 100V 110A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V.
Weitere Produktangebote IXFH110N10P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IXFH110N10P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFH110N10P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFH110N10P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
![]() |
IXFH110N10P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V |
Produkt ist nicht verfügbar |
|
![]() |
IXFH110N10P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |