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IXFB100N50P Littelfuse Inc.
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Description: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 49.23 EUR |
25+ | 40.82 EUR |
100+ | 38.26 EUR |
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Technische Details IXFB100N50P Littelfuse Inc.
Description: MOSFET N-CH 500V 100A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFB100N50P nach Preis ab 38.81 EUR bis 49.6 EUR
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IXFB100N50P | Hersteller : IXYS |
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auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB100N50P | Hersteller : Littelfuse |
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IXFB100N50P | Hersteller : Littelfuse |
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IXFB100N50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB100N50P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1890W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFB100N50P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1890W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ |
Produkt ist nicht verfügbar |