Produkte > IRF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF 3710PBF | IR | 09+ TSOP | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF-3100 100 10% | Vishay | Fixed Inductors | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF-46 22K 10%TR | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF014NTR | auf Bestellung 1509 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF01BH100J | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 720mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 50MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 10 µH Current Rating (Amps): 370 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 720mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 50MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 10 µH Current Rating (Amps): 370 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH100K | Vishay / Dale | RF inductors - Leaded 10uH 10% Axial Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH101J | Vishay Dale | Description: FIXED IND 100UH 165MA 3.5 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 3.5Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 13MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 100 µH Current Rating (Amps): 165 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH101K | Vishay Dale | Description: FIXED IND 100UH 165MA 3.5 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 3.5Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 13MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 100 µH Current Rating (Amps): 165 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH101K | Vishay | RF Choke Wirewound 100uH 10% 2.5MHz 60Q-Factor Ferrite 165mA 3.5Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH102J | Vishay Dale | Description: FIXED IND 1MH 60MA 26 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 26Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 1.4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 1 mH Current Rating (Amps): 60 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH102K | Vishay | RF Choke Wirewound 1mH 10% 790KHz 60Q-Factor Ferrite 60mA 26Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH102K | Vishay Dale | Description: FIXED IND 1MH 60MA 26 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 26Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 1.4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 1 mH Current Rating (Amps): 60 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH120K | Vishay Dale | Description: FIXED IND 12UH 350MA 800 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 800mOhm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 40MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 12 µH Current Rating (Amps): 350 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH121K | Vishay Dale | Description: FIXED IND 120UH 160MA 3.8 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 3.8Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 5.4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 120 µH Current Rating (Amps): 160 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH150K | Vishay Dale | Description: FIXED IND 15UH 335MA 880 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 880mOhm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 35MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 15 µH Current Rating (Amps): 335 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH151J | Vishay Dale | Description: FIXED IND 150UH 150MA 4.4 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 4.4Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 4.75MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 150 µH Current Rating (Amps): 150 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH180K | Vishay Dale | Description: FIXED IND 18UH 315MA 1 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 30MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 18 µH Current Rating (Amps): 315 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH181J | Vishay Dale | Description: FIXED IND 180UH 140MA 5 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 4.35MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Part Status: Obsolete Inductance: 180 µH Current Rating (Amps): 140 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH181K | Vishay Dale | Description: FIXED IND 180UH 140MA 5 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 4.35MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Part Status: Obsolete Inductance: 180 µH Current Rating (Amps): 140 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R0J | Vishay Dale | Description: FIXED IND 1UH 815MA 150 MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 150mOhm Max Q @ Freq: 50 @ 25MHz Frequency - Self Resonant: 180MHz Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Inductance: 1 µH Current Rating (Amps): 815 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R0K | Vishay Dale | Description: FIXED IND 1UH 815MA 150 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 150mOhm Max Q @ Freq: 50 @ 25MHz Frequency - Self Resonant: 180MHz Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Inductance: 1 µH Current Rating (Amps): 815 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R2J | Vishay Dale | Description: FIXED IND 1.2UH 740MA 180MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 180mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 165MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 1.2 µH Current Rating (Amps): 740 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R2K | Vishay Dale | Description: FIXED IND 1.2UH 740MA 180MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 180mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 165MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 1.2 µH Current Rating (Amps): 740 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R5J | Vishay Dale | Description: FIXED IND 1.5UH 700MA 200MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 200mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 150MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 1.5 µH Current Rating (Amps): 700 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R8J | Vishay Dale | Description: FIXED IND 1.8UH 655MA 230MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 230mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 125MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 1.8 µH Current Rating (Amps): 655 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH1R8K | Vishay Dale | Description: FIXED IND 1.8UH 655MA 230MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 230mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 125MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 1.8 µH Current Rating (Amps): 655 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH220J | Vishay Dale | Description: FIXED IND 22UH 285MA 1.2 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.2Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 25MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 22 µH Current Rating (Amps): 285 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH220K | Vishay Dale | Description: FIXED IND 22UH 285MA 1.2 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.2Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 25MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 22 µH Current Rating (Amps): 285 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH221J | Vishay Dale | Description: FIXED IND 220UH 130MA 5.7 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5.7Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 220 µH Current Rating (Amps): 130 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH221K | Vishay Dale | Description: FIXED IND 220UH 130MA 5.7 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5.7Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 220 µH Current Rating (Amps): 130 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH270K | Vishay Dale | Description: FIXED IND 27UH 270MA 1.35 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.35Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 20MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 27 µH Current Rating (Amps): 270 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH271K | Vishay Dale | Description: FIXED IND 270UH 120MA 6.5 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 6.5Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 3.7MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 270 µH Current Rating (Amps): 120 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH2R2J | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 250mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 115MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 2.2 µH Current Rating (Amps): 630 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH2R2K | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 250mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 115MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 2.2 µH Current Rating (Amps): 630 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH330J | Vishay Dale | Description: FIXED IND 33UH 255MA 1.5 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.5Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 24MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 33 µH Current Rating (Amps): 255 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH330K | Vishay Dale | Description: FIXED IND 33UH 255MA 1.5 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.5Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 24MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 33 µH Current Rating (Amps): 255 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH331K | Vishay Dale | Description: FIXED IND 330UH 100MA 9.5 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 9.5Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 3.4MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 330 µH Current Rating (Amps): 100 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH3R3K | Vishay Dale | Description: FIXED IND 3.3UH 575MA 300MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 300mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 90MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 3.3 µH Current Rating (Amps): 575 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH3R9K | Vishay Dale | Description: FIXED IND 3.9UH 555MA 320MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 320mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 80MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 3.9 µH Current Rating (Amps): 555 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH470K | Vishay Dale | Description: FIXED IND 47UH 205MA 2.3 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 2.3Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 20MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 47 µH Current Rating (Amps): 205 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH471K | Vishay Dale | Description: FIXED IND 470UH 90MA 11.6 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 11.6Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 2.55MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 470 µH Current Rating (Amps): 90 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH4R7J | Vishay Dale | Description: FIXED IND 4.7UH 530MA 350MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 350mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 75MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 4.7 µH Current Rating (Amps): 530 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH4R7K | Vishay Dale | Description: FIXED IND 4.7UH 530MA 350MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 350mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 75MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 4.7 µH Current Rating (Amps): 530 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH4R7K | Vishay / Dale | RF inductors - Leaded 4.7uH 10% Axial Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH560K | Vishay Dale | Description: FIXED IND 56UH 195MA 2.6 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 2.6Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 18MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 56 µH Current Rating (Amps): 195 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH561K | Vishay Dale | Description: FIXED IND 560UH 85MA 13 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 13Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 2.35MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 560 µH Current Rating (Amps): 85 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH5R6K | Vishay Dale | Description: FIXED IND 5.6UH 500MA 400MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 400mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 65MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Inductance: 5.6 µH Current Rating (Amps): 500 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH680J | Vishay Dale | Description: FIXED IND 68UH 185MA 2.9 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 2.9Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 15MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 68 µH Current Rating (Amps): 185 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH680K | Vishay Dale | Description: FIXED IND 68UH 185MA 2.9 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 2.9Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 15MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 68 µH Current Rating (Amps): 185 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH681J | Vishay Dale | Description: FIXED IND 680UH 75MA 18 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 18Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 2MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 680 µH Current Rating (Amps): 75 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH681K | Vishay Dale | Description: FIXED IND 680UH 75MA 18 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 18Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 2MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 680 µH Current Rating (Amps): 75 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH6R8K | Vishay Dale | Description: FIXED IND 6.8UH 470MA 450MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 450mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 60MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 6.8 µH Current Rating (Amps): 470 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH820J | Vishay Dale | Description: FIXED IND 82UH 175MA 3.2 OHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 3.2Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 14MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 82 µH Current Rating (Amps): 175 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH820K | Vishay Dale | Description: FIXED IND 82UH 175MA 3.2 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 3.2Ohm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 14MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 82 µH Current Rating (Amps): 175 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BH8R2K | Vishay Dale | Description: FIXED IND 8.2UH 425MA 550MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 550mOhm Max Q @ Freq: 50 @ 7.9MHz Frequency - Self Resonant: 55MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 8.2 µH Current Rating (Amps): 425 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01BHR39M | Vishay Dale | Description: FIXED IND 390NH 1A 90 MOHM TH Tolerance: ±20% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 90mOhm Max Q @ Freq: 40 @ 25MHz Frequency - Self Resonant: 320MHz Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Inductance: 390 nH Current Rating (Amps): 1 A | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB101K | Vishay | RF Choke Wirewound 100uH 10% 2.5MHz 60Q-Factor Ferrite 165mA 3.5Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB220K | Vishay Dale | Description: FIXED IND 22UH 285MA 1.2 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB220K | Vishay | RF Choke Wirewound 22uH 10% 2.5MHz 50Q-Factor Ferrite 285mA 1.2Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB470K | Vishay | RF Choke Wirewound 47uH 10% 2.5MHz 60Q-Factor Ferrite 205mA 2.3Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EB470K | Vishay / Dale | RF inductors - Leaded IRF-1 47 10% EB e2 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EBR47M | Vishay Dale | Description: FIXED IND 470NH 1A 100 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER102K | Vishay | RF Choke Wirewound 1mH 10% 790KHz 60Q-Factor Ferrite 60mA 26Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER180K | Vishay / Dale | RF inductors - Leaded 18uH 10% Axial Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER180K | Vishay | RF Choke Wirewound 18uH 10% 2.5MHz 50Q-Factor Ferrite 315mA 1Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER390K | Vishay | RF Choke Wirewound 39uH 10% 2.5MHz 50Q-Factor Ferrite 240mA 1.7Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER470K | Vishay | RF Choke Wirewound 47uH 10% 2.5MHz 60Q-Factor Ferrite 205mA 2.3Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER470K | Vishay Dale | Description: FIXED IND 47UH 205MA 2.3 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER471K | Vishay | RF Choke Wirewound 470uH 10% 790KHz 60Q-Factor Ferrite 90mA 11.6Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ER471K | Vishay Dale | Description: FIXED IND 470UH 90MA 11.6 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 11.6Ohm Max Q @ Freq: 60 @ 790kHz Frequency - Self Resonant: 2.55MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Inductance: 470 µH Current Rating (Amps): 90 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ERR47M | Vishay Dale | Description: FIXED IND 470NH 1A 100 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ES101K | Vishay Dale | Description: FIXED IND 100UH 165MA 3.5 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ES2R2K | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ESR10K | Vishay Dale | Description: FIXED IND 100NH 1.35A 60 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01EV6R8K | Vishay Dale | Description: FIXED IND 6.8UH 470MA 450MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU100J | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU180K | Vishay | RF Choke Wirewound 18uH 10% 2.5MHz 50Q-Factor Ferrite 315mA 1Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU180K | Vishay / Dale | RF inductors - Leaded IRF-1 18 10% R36 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU220K | Vishay Dale | Description: FIXED IND 22UH 285MA 1.2 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU2R2J | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU470K | Vishay Dale | Description: FIXED IND 47UH 205MA 2.3 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU471K | Vishay Dale | Description: FIXED IND 470UH 90MA 11.6 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU680J | Vishay Dale | Description: FIXED IND 68UH 185MA 2.9 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU680K | Vishay Dale | Description: FIXED IND 68UH 185MA 2.9 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01RU6R8K | Vishay Dale | Description: FIXED IND 6.8UH 470MA 450MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SH100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SH2R2J | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SH470K | Vishay Dale | Description: FIXED IND 47UH 205MA 2.3 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SH471K | Vishay Dale | Description: FIXED IND 470UH 90MA 11.6 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SH6R8K | Vishay Dale | Description: FIXED IND 6.8UH 470MA 450MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01SHR10K | Vishay Dale | Description: IRF-1 .1 10% RJ1 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ST100K | Vishay Dale | Description: FIXED IND 10UH 370MA 720 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ST180K | Vishay Dale | Description: FIXED IND 18UH 315MA 1 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.120" Dia x 0.260" L (3.02mm x 6.60mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1Ohm Max Q @ Freq: 50 @ 2.5MHz Frequency - Self Resonant: 30MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 18 µH Current Rating (Amps): 315 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ST2R2J | Vishay Dale | Description: FIXED IND 2.2UH 630MA 250MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ST471K | Vishay Dale | Description: FIXED IND 470UH 90MA 11.6 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF01ST6R8K | Vishay Dale | Description: FIXED IND 6.8UH 470MA 450MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH101K | Vishay / Dale | Fixed Inductors 10% 100uH Axial Leaded | auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF03BH150K | Vishay Dale | Description: FIXED IND 15UH 460MA 720 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 720mOhm Max Q @ Freq: 70 @ 2.5MHz Frequency - Self Resonant: 40MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 15 µH Current Rating (Amps): 460 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH180K | Vishay Dale | Description: FIXED IND 18UH 430MA 770 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 770mOhm Max Q @ Freq: 65 @ 2.5MHz Frequency - Self Resonant: 34MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 18 µH Current Rating (Amps): 430 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH181K | Vishay Dale | Description: FIXED IND 180UH 165MA 4.6 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 4.6Ohm Max Q @ Freq: 70 @ 790kHz Frequency - Self Resonant: 3.3MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Part Status: Obsolete Inductance: 180 µH Current Rating (Amps): 165 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH220J | Vishay Dale | Description: FIXED IND 22UH 410MA 840 MOHM TH Tolerance: ±5% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 840mOhm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 30MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 22 µH Current Rating (Amps): 410 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH220K | Vishay | RF Choke Wirewound 22uH 10% 2.5MHz 60Q-Factor Ferrite 410mA 840mOhm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH220K | Vishay Dale | Description: FIXED IND 22UH 410MA 840 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 840mOhm Max Q @ Freq: 60 @ 2.5MHz Frequency - Self Resonant: 30MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 22 µH Current Rating (Amps): 410 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH221K | Vishay Dale | Description: FIXED IND 220UH 155MA 5.1 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH270K | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH2R7K | Vishay Dale | Description: FIXED IND 2.7UH 720MA 300MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH330K | Vishay / Dale | Fixed Inductors 33uH 10% Axial Leaded | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF03BH331J | Vishay Dale | Description: FIXED IND 330UH 137MA 6.4 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH331K | Vishay Dale | Description: FIXED IND 330UH 137MA 6.4 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH390K | Vishay Dale | Description: FIXED IND 39UH 350MA 1.12 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH390K | Vishay | RF Choke Wirewound 39uH 10% 2.5MHz 50Q-Factor Ferrite 350mA 1.12Ohm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH470J | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH470K | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.22Ohm Max Q @ Freq: 45 @ 2.5MHz Frequency - Self Resonant: 13MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Inductance: 47 µH Current Rating (Amps): 340 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH470K | Vishay / Dale | Fixed Inductors 47uH 10% Axial Leaded | auf Bestellung 625 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF03BH471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH4R7K | Vishay | RF Choke Wirewound 4.7uH 10% 7.9MHz 70Q-Factor Ferrite 620mA 390mOhm DCR AXL Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH5R6K | Vishay | Fixed Inductors 5.6uH 10% Axial Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH5R6K | Vishay Dale | Description: FIXED IND 5.6UH 590MA 430MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH6R8K | Vishay Dale | Description: FIXED IND 6.8UH 550MA 480MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 480mOhm Max Q @ Freq: 75 @ 7.9MHz Frequency - Self Resonant: 68MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 6.8 µH Current Rating (Amps): 550 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH820K | Vishay Dale | Description: FIXED IND 82UH 290MA 1.62 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 1.62Ohm Max Q @ Freq: 35 @ 2.5MHz Frequency - Self Resonant: 10.3MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 82 µH Current Rating (Amps): 290 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH821K | Vishay Dale | Description: FIXED IND 820UH 105MA 10.5OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BH8R2K | Vishay Dale | Description: FIXED IND 8.2UH 530MA 520MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 520mOhm Max Q @ Freq: 80 @ 7.9MHz Frequency - Self Resonant: 53MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 8.2 µH Current Rating (Amps): 530 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BHR47K | Vishay Dale | Description: FIXED IND 470NH 1.15A 140MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BHR56K | Vishay Dale | Description: FIXED IND 560NH 1.1A 150 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03BHR82K | Vishay Dale | Description: FIXED IND 820NH 980MA 170MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EB100K | Vishay | Fixed Inductors | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EB220K | Vishay Dale | Description: FIXED IND 22UH 410MA 840 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EB3R3K | Vishay Dale | Description: FIXED IND 3.3UH 670MA 340MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 340mOhm Max Q @ Freq: 65 @ 7.9MHz Frequency - Self Resonant: 94MHz Material - Core: Ferrite Inductance Frequency - Test: 7.9 MHz Part Status: Obsolete Inductance: 3.3 µH Current Rating (Amps): 670 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EB471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EB821K | Vishay | Fixed Inductors | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EBR47M | Vishay Dale | Description: FIXED IND 470NH 1.15A 140MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER100K | Vishay | RF Choke Wirewound 10uH 10% 7.9MHz 85Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER100K | Vishay | RF Choke Wirewound 10uH 10% 7.9MHz 85Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R | auf Bestellung 2376 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF03ER100K | Vishay / Dale | RF inductors - Leaded 10uH 10% Axial Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER100K | Vishay | RF Choke Wirewound 10uH 10% 7.9MHz 85Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R | auf Bestellung 2376 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF03ER102K | Vishay | RF Choke Wirewound 1mH 10% 790KHz 65Q-Factor Ferrite 100mA 14Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER150K | Vishay Dale | Description: FIXED IND 15UH 460MA 720 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 720mOhm Max Q @ Freq: 70 @ 2.5MHz Frequency - Self Resonant: 40MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 15 µH Current Rating (Amps): 460 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER221K | Vishay Dale | Description: FIXED IND 220UH 155MA 5.1 OHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5.1Ohm Max Q @ Freq: 70 @ 790kHz Frequency - Self Resonant: 3MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Part Status: Obsolete Inductance: 220 µH Current Rating (Amps): 155 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER330K | Vishay | RF Choke Wirewound 33uH 10% 2.5MHz 55Q-Factor Ferrite 370mA 1.03Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER390K | Vishay | RF Choke Wirewound 39uH 10% 2.5MHz 50Q-Factor Ferrite 350mA 1.12Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER391K | Vishay | RF Choke Wirewound 390uH 10% 790KHz 65Q-Factor Ferrite 133mA 7Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER470K | Vishay | RF Choke Wirewound 47uH 10% 2.5MHz 45Q-Factor Ferrite 340mA 1.22Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER470K | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER471K | Vishay | RF Choke Wirewound 470uH 10% 790KHz 65Q-Factor Ferrite 126mA 7.7Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER820K | Vishay | RF Choke Wirewound 82uH 10% 2.5MHz 35Q-Factor Ferrite 290mA 1.62Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ER821K | Vishay | RF Choke Wirewound 820uH 10% 790KHz 65Q-Factor Ferrite 105mA 10.5Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ERR22M | Vishay | RF Choke Wirewound 220nH 20% 25MHz 55Q-Factor Ferrite 1.4A 100mOhm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ERR47M | Vishay Dale | Description: FIXED IND 470NH 1.15A 140MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EV100K | Vishay | Fixed Inductors | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03EV471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU100K | Vishay | RF inductors - Leaded IRF-3 10 10% R36 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU102K | Vishay | RF Choke Wirewound 1mH 10% 790KHz 65Q-Factor Ferrite 100mA 14Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU1R5K | Vishay Dale | Description: FIXED IND 1.5UH 830MA 230MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU270K | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU2R2K | Vishay Dale | Description: FIXED IND 2.2UH 750MA 280MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU330K | Vishay | RF Choke Wirewound 33uH 10% 2.5MHz 55Q-Factor Ferrite 370mA 1.03Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU470K | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU680K | Vishay | RF Choke Wirewound 68uH 10% 2.5MHz 40Q-Factor Ferrite 305mA 1.47Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU680K | Vishay Dale | Description: FIXED IND 68UH 305MA 1.47 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU820K | Vishay Dale | Description: FIXED IND 82UH 290MA 1.62 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU820K | Vishay | RF Choke Wirewound 82uH 10% 2.5MHz 35Q-Factor Ferrite 290mA 1.62Ohm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RU821K | Vishay Dale | Description: FIXED IND 820UH 105MA 10.5OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03RUR22M | Vishay | RF Choke Wirewound 220nH 20% 25MHz 55Q-Factor Ferrite 1.4A 100mOhm DCR AXL T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03SH270K | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03SH470K | Vishay Dale | Description: FIXED IND 47UH 340MA 1.22 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03SH471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03SH820K | Vishay Dale | Description: FIXED IND 82UH 290MA 1.62 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03SH821K | Vishay Dale | Description: FIXED IND 820UH 105MA 10.5OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ST180K | Vishay Dale | Description: FIXED IND 18UH 430MA 770 MOHM TH Tolerance: ±10% Package / Case: Axial Size / Dimension: 0.170" Dia x 0.385" L (4.32mm x 9.78mm) Mounting Type: Through Hole Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 770mOhm Max Q @ Freq: 65 @ 2.5MHz Frequency - Self Resonant: 34MHz Material - Core: Ferrite Inductance Frequency - Test: 2.5 MHz Part Status: Obsolete Inductance: 18 µH Current Rating (Amps): 430 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ST270K | Vishay Dale | Description: FIXED IND 27UH 390MA 940 MOHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ST471K | Vishay Dale | Description: FIXED IND 470UH 126MA 7.7 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ST820K | Vishay Dale | Description: FIXED IND 82UH 290MA 1.62 OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF03ST821K | Vishay Dale | Description: FIXED IND 820UH 105MA 10.5OHM TH | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF044 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 3-Pin(2+Tab) TO-204AE | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF044 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF044IRF045 | IR\MOT | 01+ TO-3 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF044PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF054 | Infineon Technologies | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF054 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF054 | International Rectifier HiRel Products | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF054PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF0612HI2 | L3 Narda-MITEQ | Description: MIXER | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF06SDF2 | IOR | 2007 | auf Bestellung 493 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1 1 10% | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 100 5% | Vishay / Dale | RF inductors - Leaded 100uH 5% | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 1K 10% | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 2.2 10% | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 22 10% | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 4.7 10%TR | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1 47 10%TR | Vishay / Dale | RF inductors - Leaded | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100B201 | Infineon Technologies | MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | auf Bestellung 1560 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100B201 | Infineon Technologies | Description: MOSFET N-CH 100V 192A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100B201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B201 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 83 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF100B201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2202 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100B201 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 10872 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B201 | UMW | Description: MOSFET N-CH 100V 192A TO220AB Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100B201 | INFINEON | Description: INFINEON - IRF100B201 - Leistungs-MOSFET, n-Kanal, 100 V, 192 A, 0.0035 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 192A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET, HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6676 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100B201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2202 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B201 Produktcode: 172773 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF100B202 | Infineon Technologies | Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B202 | Infineon Technologies | Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1818 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100B202 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Power dissipation: 221W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B202 | Infineon Technologies | Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1818 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B202 | Infineon Technologies | Description: MOSFET N-CH 100V 97A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V | auf Bestellung 1957 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100B202 | INFINEON | Description: INFINEON - IRF100B202 - Leistungs-MOSFET, n-Kanal, 100 V, 97 A, 0.0072 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 97A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 221W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET, HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100B202 | Infineon Technologies | Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100B202 Produktcode: 167969 | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 V Idd,A: 97 A Rds(on), Ohm: 8,6 mOhm Ciss, pF/Qg, nC: 4476/77 JHGF: THT | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF100B202 | Infineon Technologies | Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1818 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100B202 | Infineon Technologies | MOSFETs N | auf Bestellung 2208 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100B202 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Power dissipation: 221W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF100DM116XTMA1 | Infineon Technologies | MOSFETs Y | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100DM116XTMA1 | Infineon Technologies | SP001511076 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100DM116XTMA1 | Infineon Technologies | IRF100DM116XTMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100DM116XTMA1 | Infineon Technologies | Description: TRENCH >=100V DIRECTFET Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218 | Infineon Technologies | IRF100P218 | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P218 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218AKMA1 | INFINEON | Description: INFINEON - IRF100P218AKMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 209 A, 0.0011 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 209A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 556W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100P218AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 483A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 483A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P218AKMA1 | Infineon Technologies | SP005537804 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218AKMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 3254 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100P218AKMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 209A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V | auf Bestellung 427 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100P218AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 483A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 483A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 105200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P218XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 462A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 209A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 462A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218XKMA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 100V; 341A; Idm: 836A Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 341A Pulsed drain current: 836A Power dissipation: 556W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 1.28mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 462A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A 3-Pin(3+Tab) TO-247AC Tube | auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P219AKMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100P219AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A 3-Pin(3+Tab) TO-247AC Tube | auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P219AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219AKMA1 | INFINEON | Description: INFINEON - IRF100P219AKMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 203 A, 0.0014 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 341W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100P219AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A 3-Pin(3+Tab) TO-247AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219AKMA1 | Infineon Technologies | Description: MOSFET N-CH 100V TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V | auf Bestellung 389 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100P219AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A 3-Pin(3+Tab) TO-247AC Tube | auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100P219XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 316A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219XKMA1 | Infineon Technologies | Description: MOSFET N-CH 100V TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 304A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219XKMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100P219XKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 100V 304A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100S201 | INFINEON | Description: INFINEON - IRF100S201 - Leistungs-MOSFET, n-Kanal, 100 V, 192 A, 0.0035 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 192A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1443 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100S201 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 255nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100S201 | Infineon Technologies | MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 27200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100S201 | Infineon Technologies | Description: MOSFET N-CH 100V 192A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 1543 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF100S201 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 255nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100S201 | INFINEON | Description: INFINEON - IRF100S201 - Leistungs-MOSFET, n-Kanal, 100 V, 192 A, 0.0035 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 192A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1443 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF100S201 | Infineon Technologies | Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF100S201 | Infineon Technologies | Description: MOSFET N-CH 100V 192A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010 | Infineon Technologies | Array | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF101018 | IOR | SO-223 | auf Bestellung 41 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010E Produktcode: 24949 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 60 Idd,A: 84 Rds(on), Ohm: 01.12.2000 Ciss, pF/Qg, nC: 3210/130 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010E | International Rectifier | Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010E TIRF1010 Anzahl je Verpackung: 10 Stücke | auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010E | JSMicro Semiconductor | Transistor N-Channel MOSFET; 60V; 25V; 8,5mOhm; 85A; 200W; -55°C ~ 150°C; Equivalent: IRF1010E; SP001569818; IRF1010E JSMICRO TIRF1010 JSM Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010E | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010E | International Rectifier | Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010E TIRF1010 Anzahl je Verpackung: 10 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010E | JSMicro Semiconductor | Transistor N-Channel MOSFET; 60V; 25V; 8,5mOhm; 85A; 200W; -55°C ~ 150°C; Equivalent: IRF1010E; SP001569818; IRF1010E JSMICRO TIRF1010 JSM Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010EL | Infineon Technologies | Description: MOSFET N-CH 60V 84A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ELPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 12510 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 81A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.6nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 212 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | MOSFETs MOSFT 60V 81A 12mOhm 86.6nC | auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | INFINEON | Description: INFINEON - IRF1010EPBF - Leistungs-MOSFET, n-Kanal, 60 V, 81 A, 0.012 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 81A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1022 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 12523 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF Produktcode: 72223 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 60 Idd,A: 84 Rds(on), Ohm: 12 mOhm Ciss, pF/Qg, nC: 3210 JHGF: THT | verfügbar 51 Stück: 5 Stück - stock Köln46 Stück - lieferbar in 3-4 Wochen |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | International Rectifier Corporation | TO-220 | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | Infineon Technologies | Description: MOSFET N-CH 60V 84A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 12523 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1010EPBF - IRF1010E 20V-30V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1450 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 81A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.6nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ES | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010ES | International Rectifier | Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ES, IRF1010ESTRL IRF1010ES smd TIRF1010es Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010ESPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ESTRL | International Rectifier | Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C; IRF1010ES, IRF1010ESTRL IRF1010ES smd TIRF1010es Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 20800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ESTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Pulsed drain current: 330A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 619 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 21400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ESTRLPBF | INFINEON | Description: INFINEON - IRF1010ESTRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 84 A, 0.012 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 84A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 84A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ESTRLPBF | INFINEON | Description: INFINEON - IRF1010ESTRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 84 A, 0.012 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 84A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ESTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Pulsed drain current: 330A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced | auf Bestellung 619 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 20800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | MOSFETs MOSFT 60V 83A 12mOhm 86.6nC | auf Bestellung 761 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ESTRLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 84A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 2689 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ESTRPBF | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF1010ESTRR | Infineon Technologies | Description: MOSFET N-CH 60V 84A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ESTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZ | Infineon Technologies | Description: MOSFET N-CH 60V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZL | Infineon Technologies | Description: MOSFET N-CH 60V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 208 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 34000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | MOSFETs MOSFT 60V 84A 8.5mOhm 58nC | auf Bestellung 3258 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | INFINEON | Description: INFINEON - IRF1010EZPBF - Leistungs-MOSFET, n-Kanal, 60 V, 84 A, 0.0085 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 84A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0085ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2811 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EZPBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZPBF | Infineon Technologies | Description: MOSFET N-CH 60V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | auf Bestellung 8115 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010EZS | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010EZSPBF | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZSPBF | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | auf Bestellung 2980 Stücke: Lieferzeit 142-146 Tag (e) |
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| IRF1010EZSTRLP | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZSTRLP | INFINEON | Description: INFINEON - IRF1010EZSTRLP - Leistungs-MOSFET, n-Kanal, 60 V, 75 A, 0.0068 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0068ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010EZSTRLP | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010EZSTRLP | INFINEON | Description: INFINEON - IRF1010EZSTRLP - Leistungs-MOSFET, n-Kanal, 60 V, 75 A, 0.0068 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0068ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010N | IR | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1010N | IRC | 07+; | auf Bestellung 9840 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010N | International Rectifier | Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C; IRF1010N TIRF1010n Anzahl je Verpackung: 10 Stücke | auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010N | IR - ASA only Supplier | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010N | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010N | Infineon / IR | MOSFETs MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010N | International Rectifier | Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C; IRF1010N TIRF1010n Anzahl je Verpackung: 10 Stücke | auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010N TO220 | auf Bestellung 467 Stücke: Lieferzeit 18-25 Tag (e) | |||||||||||||||||||
| IRF1010NL | auf Bestellung 740 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF1010NL | Infineon Technologies | Description: MOSFET N-CH 55V 85A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NLPBF | IR | 03+ SOP | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010NLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1088 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NPBF | Infineon Technologies | MOSFETs MOSFT 55V 72A 11mOhm 80nC | auf Bestellung 1609 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010NPBF Produktcode: 26804 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 55 Idd,A: 85 Rds(on), Ohm: 01.11.2000 Ciss, pF/Qg, nC: 3210/120 JHGF: THT | verfügbar 13 Stück: 12 Stück - stock Köln1 Stück - lieferbar in 3-4 Wochen |
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| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1088 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NPBF | INFINEON | Description: INFINEON - IRF1010NPBF - Leistungs-MOSFET, n-Kanal, 55 V, 68 A, 0.011 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 944 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1088 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010NS | транзистор HEXFET Power MOSFET. N-Channel VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. D2PAK | auf Bestellung 165 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRF1010NS | International Rectifier | Transistor N-Channel MOSFET; 55V; 20V; 11mOhm; 85A; 180W; -55°C ~ 175°C; IRF1010NS TIRF1010ns Anzahl je Verpackung: 5 Stücke | auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010NS-TO263 | TI | 10+ | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010NSPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSPBF | Infineon (IRF) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSPBF | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSPBF Produktcode: 154257 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1010NSPBF// | IR | auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1010NSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRL | IR | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NSTRLPBF | INFINEON | Description: INFINEON - IRF1010NSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 85 A, 0.011 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 85A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010NSTRLPBF | Infineon Technologies | MOSFETs MOSFT 55V 84A 11mOhm 80nC | auf Bestellung 9663 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010NSTRLPBF Produktcode: 196974 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NSTRLPBF | INFINEON | Description: INFINEON - IRF1010NSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 85 A, 0.011 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 85A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRR | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRR | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRRPBF | Infineon / IR | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF1010NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010NSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 85A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1010Z | Infineon | Transistor N-Channel MOSFET; 55V; 20V; 7,5mOhm; 94A; 140W; -55°C ~ 175°C; IRF1010Z TIRF1010z Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1010Z | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010Z | IR | MOSFET Transistor, N Channel, 75 A, 55 V, 5.8 mohm, 10 V, 2 V TO-220-3 | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ZL | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZPBF | INFINEON | Description: INFINEON - IRF1010ZPBF - Leistungs-MOSFET, n-Kanal, 55 V, 94 A, 0.0058 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 94A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ZPBF | Infineon Technologies | MOSFET MOSFT 55V 94A 7.5mOhm 63nC | auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ZPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1010ZPBF - IRF1010 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 911 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ZPBF | International Rectifier | Description: IRF1010 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ZS | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSTRLPBF | INFINEON | Description: INFINEON - IRF1010ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0058 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 3380 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies | MOSFETs MOSFT 55V 94A 7.5mOhm 63nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | auf Bestellung 2060 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ZSTRLPBF | INFINEON | Description: INFINEON - IRF1010ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0058 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 3380 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1010ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1010ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1010ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018E | International Rectifier | Transistor N-Channel MOSFET; 60V; 20V; 8,4mOhm; 79A; 110W; -55°C~175°C; Substitute: IRF1018E; IRF1018E TIRF1018e | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||
| IRF1018E | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018EPBF Produktcode: 98648 | IR | Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 79 A Rds(on), Ohm: 7,1 Ohm Ciss, pF/Qg, nC: 2290/46 JHGF: THT | auf Bestellung 35 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 5500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 5491 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018EPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 137 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1018EPBF | Infineon Technologies | MOSFETs MOSFT 60V 79A 8.4mOhm 46nC Qg | auf Bestellung 4216 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018EPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018EPBF | Infineon Technologies | Description: MOSFET N-CH 60V 79A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V | auf Bestellung 3670 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1018EPBF | INFINEON | Description: INFINEON - IRF1018EPBF - Leistungs-MOSFET, n-Kanal, 60 V, 79 A, 0.0071 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 79A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0071ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1326 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018EPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 5500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018ES Produktcode: 99459 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 60 Idd,A: 79 Rds(on), Ohm: 7.1 mOhm Ciss, pF/Qg, nC: 2290/46 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018ES | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018ES-GURT | International Rectifier | N-MOSFET HEXFET 60V 79A 110W 0,0084Ω IRF1018ES TIRF1018es Anzahl je Verpackung: 5 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1018ESLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 79A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018ESLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018ESPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1018ESPBF - IRF1018E - HEXFET POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018ESPBF | Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC | auf Bestellung 869 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF1018ESPBF | Infineon Technologies | Description: MOSFET N-CH 60V 79A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 79A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V | auf Bestellung 8560 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1018ESTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhanced | auf Bestellung 531 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | MOSFETs MOSFT 60V 79A 8.4mOhm 46nC Qg | auf Bestellung 4819 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF Produktcode: 203741 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Description: MOSFET N-CH 60V 79A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1018ESTRLPBF | INFINEON | Description: INFINEON - IRF1018ESTRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 79 A, 0.0071 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 79A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0071ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018ESTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 531 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 35935 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1018ESTRLPBF | INFINEON | Description: INFINEON - IRF1018ESTRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 79 A, 0.0071 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 79A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0071ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1018ESTRLPBF | Infineon Technologies | Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1059MS | IOR | 2007 | auf Bestellung 6265 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1059MSPBF | IOR | 2007 | auf Bestellung 7481 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1059TRPBF | IOR | 2006 | auf Bestellung 9745 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1104 | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104 | International Rectifier | N-MOSFET HEXFET 40V 100A 2.4W 0,009Ω IRF1104 TIRF1104 Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1104L | Infineon Technologies | Description: MOSFET N-CH 40V 100A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 60A, 10V Power Dissipation (Max): 2.4W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104LPBF | Infineon Technologies | Description: MOSFET N-CH 40V 100A TO262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104PBF | INFINEON | Description: INFINEON - IRF1104PBF - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.009 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 18617 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1104PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 106 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4408 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF | IRF1104PBF Транзисторы HEXFET | auf Bestellung 104 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4408 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1104PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF | Infineon Technologies | MOSFETs 40V 1 N-CH HEXFET 2.2mOhms 43nC | auf Bestellung 5918 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF Produktcode: 28062 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 100 Rds(on), Ohm: 01.09.2000 Ciss, pF/Qg, nC: 2900/93 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104PBF | Infineon Technologies | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 60A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | auf Bestellung 8402 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1104PBF.. | INFINEON | Description: INFINEON - IRF1104PBF.. - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.009 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 100 Qualifikation: - Verlustleistung Pd: 170 Gate-Source-Schwellenspannung, max.: 4 Verlustleistung: 170 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.009 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.009 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1104S | Infineon Technologies | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 60A, 10V Power Dissipation (Max): 2.4W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1104SPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104STRL | Infineon Technologies | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 60A, 10V Power Dissipation (Max): 2.4W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104STRR | Infineon Technologies | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 60A, 10V Power Dissipation (Max): 2.4W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1104STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF110J | IR | 00+ TO-220 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF11N50 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF11N50APBF | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF120 | Harris Corporation | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-204AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V | auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF120 | Infineon Technologies | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF120 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF120 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF120CECC | International Rectifier | Description: MOSFET 100V 9.2A Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF120PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF121 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF121-0001 | Harris Corporation | Description: 9.2A, 80V, 0.27OHM, N CHANNEL MO Packaging: Bulk Part Status: Active | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF122 | International Rectifier | Description: 8.0A, 100V, 0.36 OHM, N-CHANNEL, Packaging: Bulk | auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF122 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF123 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF123 | International Rectifier | Description: N-CHANNEL HERMETIC MOS HEXFET Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V | auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF12543G1 | IOR | 01+ | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1282 | IOR | 02+ SMD-8 | auf Bestellung 380 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1282TRPBF | IR | 09+ | auf Bestellung 20018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF130 | Semelab | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF130 | INTERNATIONAL RECTIFIER | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; 79W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power: 79W Case: TO3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF130 | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF130 | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF130 | Infineon Technologies | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1302HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1302PBF | Infineon Technologies | Trans MOSFET N-CH Si 20V 180A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1302S | Infineon Technologies | Description: MOSFET N-CH 20V 174A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 104A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1302S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1302SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF130PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF130SMD05DSG.01 | Welwyn Components / TT Electronics | MOSFETs PACIFIC SCIENTIFIC /COMPUTROL | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF131 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1310 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310N | International Rectifier | Transistor N-Channel MOSFET; 100V; 20V; 36mOhm; 42A; 160W; -55°C ~ 175°C; IRF1310 TIRF1310 Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1310N Produktcode: 26596 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1310NL | Infineon Technologies | Description: MOSFET N-CH 100V 42A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3178 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NPBF | INFINEON | Description: INFINEON - IRF1310NPBF - Leistungs-MOSFET, n-Kanal, 100 V, 41 A, 0.036 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1310NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NPBF | Infineon Technologies | Description: MOSFET N-CH 100V 42A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | auf Bestellung 1325 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1310NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NPBF | Infineon Technologies | MOSFETs MOSFT 100V 42A 36mOhm 73.3nC | auf Bestellung 3686 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1310NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2766 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 73.3nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1310NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2766 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1310NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 73.3nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NPBF Produktcode: 34256 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 100 V Idd,A: 42 A Rds(on), Ohm: 0,036 Ohm Ciss, pF/Qg, nC: 1900/110 JHGF: THT | verfügbar 225 Stück: 15 Stück - stock Köln210 Stück - lieferbar in 3-4 Wochen |
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| IRF1310NS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310NS | IR | 03+ | auf Bestellung 220 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310NS | Infineon Technologies | Trans MOSFET N-CH Si 100V 42A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NS | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310NS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310NSHR | IR - ASA only Supplier | Trans MOSFET N-CH Si 100V 42A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSHR | International Rectifier | Trans MOSFET N-CH Si 100V 42A 3-Pin(2+Tab) | auf Bestellung 8701 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSPBF | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC | auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF1310NSPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1310NSPBF Produktcode: 150473 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1310NSPBF | International Rectifier HiRel Products | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSPBF | Infineon Technologies | Description: MOSFET N-CH 100V 42A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSPBF-INF | Infineon Technologies | Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSTRLPBF | INFINEON | Description: INFINEON - IRF1310NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 42 A, 0.036 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 160W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3854 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 140A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 280000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSTRLPBF | Infineon Technologies | MOSFETs MOSFT 100V 42A 36mOhm 73.3nC | auf Bestellung 15071 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1310NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 140A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | auf Bestellung 9383 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1310NSTRLPBF | INFINEON | Description: INFINEON - IRF1310NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 42 A, 0.036 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 160W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3854 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 280000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1310NSTRPBF | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1310NSTRR | Infineon Technologies | Description: MOSFET N-CH 100V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310NSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 100V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1310S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310STRLPBF | IR | 09+ | auf Bestellung 10018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1310ZPBF Produktcode: 117648 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1311 | International Rectifier Corporation | СНЯТ С ПРОИЗВОДСТВА | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1312 | International Rectifier | N-MOSFET HEXFET 80V 95A 3.8W 0,010Ω IRF1312 TIRF1312 Anzahl je Verpackung: 44 Stücke | auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1312HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312L | auf Bestellung 1862 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF1312PBF | Infineon Technologies | Trans MOSFET N-CH 80V 95A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312PBF | Infineon Technologies | Description: MOSFET N-CH 80V 95A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 57A, 10V Power Dissipation (Max): 3.8W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312PBF Produktcode: 40543 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1312PBF | Infineon / IR | MOSFET 80V 1 N-CH HEXFET 10mOhms 93nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312S | Infineon Technologies | Trans MOSFET N-CH 80V 95A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1312S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1312S | IR | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1312SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312SHR | International Rectifier HiRel Products | Trans MOSFET N-CH 80V 95A 3-Pin(2+Tab) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312SPbF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312STRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1312STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF132 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1324 | Infineon Technologies | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324 | International Rectifier | N-MOSFET HEXFET 24V 353A 300W 0,0015Ω IRF1324 TIRF1324 Anzahl je Verpackung: 25 Stücke | auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1324LPBF | Infineon Technologies | Description: MOSFET N-CH 24V 195A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324PBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1324PBF - IRF1324 - 195A, 24V, 0.0015OHM, N-CHANEL tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB Technology: HEXFET® Case: TO220AB Mounting: THT On-state resistance: 1.5mΩ Kind of package: tube Power dissipation: 300W Polarisation: unipolar Drain-source voltage: 24V Drain current: 353A Gate charge: 160nC Type of transistor: N-MOSFET Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 726 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1324PBF Produktcode: 94346 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 24 V Idd,A: 249 A Rds(on), Ohm: 1,2 mOhm Ciss, pF/Qg, nC: 7590/160 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1324PBF | Infineon Technologies | MOSFETs MOSFT 24V 353A 1.5mOhm 160nC Qg | auf Bestellung 1607 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1324PBF | Infineon Technologies | Description: MOSFET N-CH 24V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V | auf Bestellung 4622 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1324PBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 353A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1324PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB Technology: HEXFET® Case: TO220AB Mounting: THT On-state resistance: 1.5mΩ Kind of package: tube Power dissipation: 300W Polarisation: unipolar Drain-source voltage: 24V Drain current: 353A Gate charge: 160nC Type of transistor: N-MOSFET Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1324S | International Rectifier | N-MOSFET HEXFET 24V 195A 300W 0,00165Ω IRF1324S TIRF1324s Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1324S Produktcode: 99460 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 24 Idd,A: 240 Rds(on), Ohm: 0.8 mOhm Ciss, pF/Qg, nC: 7700/180 JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324S-7P | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324S-7PPBF | Infineon Technologies | Description: MOSFET N-CH 24V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324S-7PPBF Produktcode: 98274 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-2) JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324S-7PPBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 429A 7-Pin(6+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324SPBF | Infineon Technologies | Trans MOSFET N-CH Si 24V 340A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324SPBF | Infineon Technologies | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324STRL-7PP | Infineon Technologies | Trans MOSFET N-CH Si 24V 429A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1324STRL-7PP | Infineon Technologies | Description: MOSFET N-CH 24V 240A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1324STRLPBF | Infineon Technologies | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF133 | IR/MOT | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF133 | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135B203 Produktcode: 142696 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | Infineon Technologies | Description: MOSFET N-CH 135V 129A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V | auf Bestellung 1879 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Kind of package: tube Drain-source voltage: 135V Drain current: 91A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 0.27µC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 512A Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF135B203 | INFINEON | Description: INFINEON - IRF135B203 - Leistungs-MOSFET, n-Kanal, 135 V, 129 A, 0.0067 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 135V rohsCompliant: YES Dauer-Drainstrom Id: 129A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET, HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2374 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135B203 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB Kind of package: tube Drain-source voltage: 135V Drain current: 91A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 0.27µC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 512A Mounting: THT Case: TO220AB | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135B203 | Infineon Technologies | MOSFETs MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | auf Bestellung 2945 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135B203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 15200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 0.27µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | INFINEON | Description: INFINEON - IRF135S203 - Leistungs-MOSFET, StrongIRFET™, n-Kanal, 135 V, 129 A, 0.0067 ohm, TO-263 (D2PAK) tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 135V rohsCompliant: YES Dauer-Drainstrom Id: 129A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135S203 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 135V Drain current: 91A Pulsed drain current: 512A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 0.27µC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135S203 | Infineon Technologies | MOSFETs MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135S203 | Infineon Technologies | Description: MOSFET N-CH 135V 129A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V | auf Bestellung 798 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | INFINEON | Description: INFINEON - IRF135S203 - Leistungs-MOSFET, StrongIRFET™, n-Kanal, 135 V, 129 A, 0.0067 ohm, TO-263 (D2PAK) tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 135V rohsCompliant: YES Dauer-Drainstrom Id: 129A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135S203 | Infineon Technologies | Description: MOSFET N-CH 135V 129A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135S203 | Infineon Technologies | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135SA204 | INFINEON | Description: INFINEON - IRF135SA204 - Leistungs-MOSFET, n-Kanal, 135 V, 160 A, 0.0059 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 135V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 500W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET HEXFET Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0059ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135SA204 | Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135SA204 | Infineon Technologies | Description: MOSFET N-CH 135V 160A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 96A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11690 pF @ 50 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF135SA204 | Infineon Technologies | Trans MOSFET N-CH Si 135V 160A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF135SA204 | INFINEON | Description: INFINEON - IRF135SA204 - Leistungs-MOSFET, n-Kanal, 135 V, 160 A, 0.0059 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 135V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 500W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET HEXFET Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0059ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135SA204 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF135SA204 - IRF135S 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF135SA204 | Infineon Technologies | Trans MOSFET N-CH Si 135V 160A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF135SA204 | Infineon | auf Bestellung 204 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF140 | Semelab (TT electronics) | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF140 | IR/MOT | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF140 | Semelab / TT Electronics | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF140 | Semelab | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF140 | International Rectifier HiRel Products | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404 | International Rectifier | Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 202A; 333W; -55°C ~ 175°C; IRF1404 IRF1404 TIRF1404 Anzahl je Verpackung: 10 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; -55°C ~ 175°C; Equivalent: IRF1404; SP001561374; IRF1404 JSMICRO TIRF1404 JSM Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404 | Infineon / IR | MOSFETs MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404 | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404 | International Rectifier | Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 202A; 333W; -55°C ~ 175°C; IRF1404 IRF1404 TIRF1404 Anzahl je Verpackung: 10 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404L | Infineon Technologies | Description: MOSFET N-CH 40V 162A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 915 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404LPBF | INFINEON | Description: INFINEON - IRF1404LPBF - Leistungs-MOSFET, n-Kanal, 40 V, 162 A, 0.0035 ohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404LPBF | Infineon Technologies | Description: MOSFET N-CH 40V 162A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | auf Bestellung 4600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 910 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404LPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404LPBF | Infineon Technologies | MOSFETs MOSFT 40V 162A 4mOhm 160nC | auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404LPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhanced | auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 915 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1072 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404PBF | INFINEON | Description: INFINEON - IRF1404PBF - Leistungs-MOSFET, n-Kanal, 40 V, 162 A, 0.004 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 10983 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF | Infineon Technologies | MOSFETs 40V 202A 4mOhm 160nC | auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 287488 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2979 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 287488 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF Produktcode: 31360 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 162 Rds(on), Ohm: 01.04.2000 Ciss, pF/Qg, nC: 7360/160 JHGF: THT | auf Bestellung 248 Stück: Lieferzeit 21-28 Tag (e)erwartet 23 Stück: | |||||||||||||||||
| IRF1404PBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1404PBF - IRF1404 MOSFET N-CHANNEL SINGLE 40V 202 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404PBF | Infineon Technologies | Description: MOSFET N-CH 40V 202A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V | auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404PBF | International Rectifier Corporation | TO-220 | auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404PBF-EL | International Rectifier | Description: MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404SPBF | Infineon Technologies | Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404SPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STR | International Rectifier | Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s Anzahl je Verpackung: 6 Stücke | auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404STRL | International Rectifier | Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s Anzahl je Verpackung: 5 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 14400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 162A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | auf Bestellung 1709 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404STRLPBF Produktcode: 169012 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 822 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRLPBF | INFINEON | Description: INFINEON - IRF1404STRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 162 A, 0.0035 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2831 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 14400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 14400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRLPBF | INFINEON | Description: INFINEON - IRF1404STRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 162 A, 0.0035 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 162A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2831 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404STRLPBF | Infineon Technologies | MOSFETs MOSFT 40V 162A 4mOhm 160nC | auf Bestellung 3652 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404STRR | Infineon Technologies | Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRRPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1404STRRPBF - IRF1404 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRRPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404STRRPBF | Infineon Technologies | Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRRPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404Z | International Rectifier | N-MOSFET HEXFET 40V 75A 200W 0,0037Ω IRF1404Z TIRF1404z Anzahl je Verpackung: 10 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404ZGPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZGPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 190A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZPBF | International Rectifier Corporation | TO-220AB | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced | auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 890 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3894 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | MOSFETs MOSFT 40V 190A 3.7mOhm 100nC Qg | auf Bestellung 8994 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | auf Bestellung 2715 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZPBF | INFINEON | Description: INFINEON - IRF1404ZPBF - Leistungs-MOSFET, n-Kanal, 40 V, 190 A, 0.0037 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 190A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 220W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZPBF Produktcode: 26520 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 75 Rds(on), Ohm: 0.0037 JHGF: THT | auf Bestellung 116 Stück: Lieferzeit 21-28 Tag (e) |
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| IRF1404ZPBF; 190A; 40V; 220W; 0.0037R; N-канальный; HEXFET; Корпус: TO-220; INFINEON (IRF) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| IRF1404ZS | International Rectifier | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK IRF1404ZS Infineon TIRF1404zs Anzahl je Verpackung: 10 Stücke | auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1404ZS Produktcode: 99461 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 40 Idd,A: 120 Rds(on), Ohm: 2.7 mOhm Ciss, pF/Qg, nC: 4340/100 JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSPBF | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1404ZSPBF - IRF1404 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZSPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZSPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRL | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZSTRLPBF | INFINEON | Description: INFINEON - IRF1404ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0027ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1694 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | auf Bestellung 3452 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZSTRLPBF | Infineon Technologies | MOSFETs MOSFT 40V 190A 3.7mOhm 100nC Qg | auf Bestellung 3335 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1404ZSTRLPBF | INFINEON | Description: INFINEON - IRF1404ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0027ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1694 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1404ZSTRR | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1404ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405 | International Rectifier | Transistor N-Channel MOSFET; 55V; 20V; 5,3mOhm; 169A; 330W; -55°C ~ 175°C; IRF1405 TIRF1405 Anzahl je Verpackung: 10 Stücke | auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1405 | IR | 2004 TO220 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405 | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A Automotive 3-Pin(3+Tab) TO-220AB Full-Pak Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405LPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405LPBF | Infineon Technologies | Description: MOSFET N-CH 55V 131A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 7059 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF Produktcode: 27155 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 55 Idd,A: 169 Rds(on), Ohm: 0.0053 JHGF: THT | auf Bestellung 54 Stück: Lieferzeit 21-28 Tag (e) |
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| IRF1405PBF | INFINEON | Description: INFINEON - IRF1405PBF - Leistungs-MOSFET, n-Kanal, 55 V, 169 A, 0.0053 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 169A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 330W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0053ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1005 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | Infineon Technologies | MOSFETs MOSFT 55V 133A 5.3mOhm 170nC | auf Bestellung 1566 Stücke: Lieferzeit 80-84 Tag (e) |
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| IRF1405PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 133A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 691 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 133A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 691 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 15688 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405PBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 169A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 7059 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405PBF | Infineon Technologies | Description: MOSFET N-CH 55V 169A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | auf Bestellung 12976 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405PBF; 133A; 55V; 200W; 0.0053R; N-канальный; HEXFET; Корпус: TO-220; INFINEON (IRF) | auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| IRF1405S | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405S | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405SPBF | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405SPBF | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC | auf Bestellung 599 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF1405STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 131A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 131A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | auf Bestellung 2349 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405STRLPBF | INFINEON | Description: INFINEON - IRF1405STRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 131 A, 0.0046 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 131A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0046ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5079 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | MOSFETs MOSFT 55V 131A 5.3mOhm 170nC | auf Bestellung 14032 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405STRLPBF | INFINEON | Description: INFINEON - IRF1405STRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 131 A, 0.0046 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 131A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0046ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5079 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405STRR | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405STRRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 131A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405Z | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405Z | IR | 09+ SOP20 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405ZL | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1405ZL | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZL-7PPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 7-Pin(7+Tab) TO-263CA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZL-7PPBF | Infineon Technologies | Description: MOSFET N-CH 55V 120A TO263CA-7 Packaging: Tube Package / Case: TO-263-7 (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-263CA-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | auf Bestellung 561 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 150A Power dissipation: 230W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 158000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1586 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405ZPBF | IRF1405ZPBF Транзисторы Прочие | auf Bestellung 1099 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRF1405ZPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 150A Power dissipation: 230W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced | auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF Produktcode: 35347 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 55 Idd,A: 169 Rds(on), Ohm: 0.0053 Ciss, pF/Qg, nC: 5480/170 JHGF: THT | verfügbar 5 Stück: |
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| IRF1405ZPBF | Infineon Technologies | MOSFETs MOSFT 55V 150A 4.9mOhm 120nC | auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405ZPBF | IRF1405ZPBF Транзисторы Прочие | auf Bestellung 952 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRF1405ZPBF | INFINEON | Description: INFINEON - IRF1405ZPBF - Leistungs-MOSFET, n-Kanal, 55 V, 150 A, 0.0049 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0049ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1649 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZPBFAKSA1 | Infineon Technologies | SP005729366 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZS | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405ZS | IR | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1405ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1405ZS-7P | auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRF1405ZS-7P | Infineon Technologies | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZS-7PPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 7-Pin(6+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSPBF | IR | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1405ZSPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSPBF | Infineon / IR | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF1405ZSTRL-7P | Infineon Technologies | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRL7PP | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRL7PP | Infineon Technologies | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRLPB Produktcode: 196482 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1405ZSTRLPBF | International Rectifier | Description: PFET, 75A I(D), 55V, 0.0049OHM, Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1405ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRLPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1405ZSTRLPBF - IRF1405 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 151888 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405ZSTRLPBF | International Rectifier/Infineon | N-канальний ПТ; Udss, В = 55; Id = 75 А; Ciss, пФ @ Uds, В = 4780 @ 25; Qg, нКл = 180 @ 10 В; Rds = 4,9 мОм @ 75 A, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 230; Тексп, °C = -55...+175; Тип монт. = smd; D2PAK | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1405ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRLPBF | Infineon / IR | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRRPBF | International Rectifier Corporation | N-CH 55V 75A D2PAK | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1405ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 150A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZTRL | Vishay Siliconix | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1405ZTRR | Vishay Siliconix | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407 | International Rectifier | Transistor N-Channel MOSFET; 75V; 20V; 7,8mOhm; 130A; 330W; -55°C ~ 175°C; IRF1407 TIRF1407 Anzahl je Verpackung: 10 Stücke | auf Bestellung 173 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1407L | IR | 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1407L | Infineon Technologies | Description: MOSFET N-CH 75V 100A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407LPBF | International Rectifier | Description: MOSFET N-CH 75V 100A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407LPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407PBF | INFINEON | Description: INFINEON - IRF1407PBF - Leistungs-MOSFET, n-Kanal, 75 V, 130 A, 0.0078 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 75V rohsCompliant: YES Dauer-Drainstrom Id: 130A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 330W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0078ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1407PBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407PBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 6285 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407PBF | Infineon Technologies | Description: MOSFET N-CH 75V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | auf Bestellung 11606 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1407PBF | Infineon Technologies | MOSFETs MOSFT 75V 130A 7.8mOhm 160nC | auf Bestellung 1126 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1407PBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRF1407PBF - IRF1407 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1407PBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 6280 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407PBF | International Rectifier | Description: IRF1407 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1407PBF Produktcode: 24062 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 75 Idd,A: 130 Rds(on), Ohm: 0.0078 Ciss, pF/Qg, nC: 5600/160 JHGF: THT | verfügbar 2 Stück: erwartet 100 Stück: 100 Stück - erwartet 22.09.2024 |
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| IRF1407PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 249 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF1407PBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 6285 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1407PBF; 130A; 75V; 330W; 0.0078R; N-канальный; HEXFET; Корпус: TO-220; INFINEON (IRF) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| IRF1407S | IR | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1407S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1407S Produktcode: 52433 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1407S | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1407S | Infineon Technologies | Description: MOSFET N-CH 75V 100A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407SPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRLPBF Produktcode: 107266 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | Description: MOSFET N-CH 75V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1407STRLPBF | INFINEON | Description: INFINEON - IRF1407STRLPBF - Leistungs-MOSFET, n-Kanal, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.8W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0078ohm SVHC: Lead (17-Jan-2023) | auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRLPBF | Infineon Technologies | Description: MOSFET N-CH 75V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | MOSFETs MOSFT 75V 100A 7.8mOhm 160nC | auf Bestellung 1572 Stücke: Lieferzeit 80-84 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 520A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1407STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 520A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRR | Infineon Technologies | Description: MOSFET N-CH 75V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRRPBF | Infineon Technologies | Description: MOSFET N-CH 75V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1407STRRPBF | Infineon / IR | MOSFET 75V 1 N-CH HEXFET 7.8mOhms 160nC | auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRF141 | International Rectifier | Description: 28A, 80V, 0.077OHM, N-CHANNEL PO Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Power Dissipation (Max): 150W Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drain to Source Voltage (Vdss): 80 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF142 | International Rectifier | Description: 25A, 100V, 0.1OHM, N-CHANNEL POW Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A Power Dissipation (Max): 150W Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drain to Source Voltage (Vdss): 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF142 | IR/MOT | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF143 | International Rectifier | Description: MOSFET N-CH 60V 24A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF150 | Semelab / TT Electronics | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150 | International Rectifier HiRel Products | Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 | auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150 | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150 | Semelab (TT electronics) | Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150 | International Rectifier | Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 | auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150 | Semelab | Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503 Produktcode: 124973 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1503HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503LPBF | Infineon Technologies | Description: MOSFET N-CH 30V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503PBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503PBF | Infineon Technologies | Description: MOSFET N-CH 30V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1503SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503SPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 190A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1503SPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503SPBF | Infineon | auf Bestellung 3630 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1503SPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 190A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF1503SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRLHR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRLPBF | Infineon | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1503STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRLPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1503STRRPBF Produktcode: 125066 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF150DM115XTMA1 | Infineon Technologies | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150DM115XTMA1 | Infineon Technologies | Description: TRENCH >=100V DIRECTFET Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 150 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150DM115XTMA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 1000 Stücke: Lieferzeit 192-196 Tag (e) |
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| IRF150DM115XTMA1 | Infineon Technologies | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150DM115XTMA1 | Infineon Technologies | SP001511080 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150DM115XTMA1 | Infineon Technologies | Description: TRENCH >=100V DIRECTFET Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Drain to Source Voltage (Vdss): 150 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150N | IR | TO-3P 09+ | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF150N | IR | DC9837 SOP; | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF150P220 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220 | Infineon Technologies | IRF150P220 | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P220AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 150V 316A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 27600 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P220AKMA1 | Infineon Technologies | SP005537809 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 150V 316A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 150V 316A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P220AKMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 2381 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF150P220AKMA1 | Infineon Technologies | Trans MOSFET N-CH Si 150V 316A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220AKMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 203A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 265µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V | auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF150P220AKMA1 | INFINEON | Description: INFINEON - IRF150P220AKMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 203 A, 0.0023 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.6V euEccn: NLR Verlustleistung: 556W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 316A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 203A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 265µA Supplier Device Package: PG-TO247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 316A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 316A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221 | Infineon Technologies | IRF150P221 | auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P221 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221AKMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 186A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V | auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221AKMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF150P221AKMA1 | INFINEON | Description: INFINEON - IRF150P221AKMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 186 A, 0.0036 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 186A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.6V euEccn: NLR Verlustleistung: 341W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0036ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 132800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF150P221AKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221XKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221XKMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 186A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221XKMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 186A Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF150P221XKMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF151 | Harris Corporation | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AE Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V | auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF160 | IR/MOT | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRF1607 | Infineon Technologies | Description: MOSFET N-CH 75V 142A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1607HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1607PBF | INFINEON | Description: INFINEON - IRF1607PBF - Leistungs-MOSFET, n-Kanal, 75 V, 142 A, 0.0058 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 75 Dauer-Drainstrom Id: 142 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 380 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0058 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 4 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1607PBF | Infineon Technologies | MOSFET MOSFT 75V 142A 7.5mOhm 210nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1607PBF | Infineon Technologies | Description: MOSFET N-CH 75V 142A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1644G | IR | 95+ N/A | auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1704 | Infineon Technologies | Description: MOSFET N-CH 40V 170A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1704 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1704PbF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRF1740 Produktcode: 128896 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRF1744G | IR | 02+ TO-220 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRF1830G Produktcode: 116830 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar |