Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 26 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT10M07JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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APT10M09LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced |
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APT10M09LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT10M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar |
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| APT10M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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| APT10M11JVRU2 | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar |
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| APT10M11JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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| APT10M11JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar |
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| APT10M11JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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APT10M11LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 11mΩ Mounting: THT Gate charge: 450nC Kind of channel: enhanced |
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APT10M11LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 11mΩ Mounting: THT Gate charge: 450nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT10M19BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT10M19BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT10M19SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
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APT10M19SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT10M19SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
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APT10M19SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT10M25BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced |
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APT10M25BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT11F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced |
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APT11F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT11N80BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT11N80BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R2BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced |
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APT1201R2BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R2BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT1201R2BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
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APT1201R4BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced |
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APT1201R4BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A |
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APT1201R4SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A Anzahl je Verpackung: 1 Stücke |
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APT1201R5BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 40A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced |
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APT1201R5BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 40A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R5BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A |
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APT1201R5BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A Anzahl je Verpackung: 1 Stücke |
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APT1201R6BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 230nC Kind of channel: enhanced |
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APT1201R6BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 230nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R6BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV |
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APT1201R6BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
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APT1201R6SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 230nC Kind of channel: enhanced |
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APT1201R6SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 230nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT12031JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT12031JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APT12040JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 700W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT12040JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 700W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT12040L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A |
Produkt ist nicht verfügbar |
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| APT12040L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1204R7BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A |
Produkt ist nicht verfügbar |
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APT1204R7BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1204R7SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A |
Produkt ist nicht verfügbar |
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APT1204R7SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT12057B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| APT12057B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT12057B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| APT12057B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT12057JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 19A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 76A Power dissipation: 520W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT12057JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 19A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 76A Power dissipation: 520W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT12057LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264 Mounting: THT Case: TO264 Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
| APT10M07JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M09LVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M09LVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M11JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT10M11JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M11JVRU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT10M11JVRU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M11JVRU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT10M11JVRU3 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M11LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M11LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M19BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M19BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M19SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M19SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M19SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M19SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10M25BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT10M25BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT11F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 46A
Power dissipation: 337W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 46A
Power dissipation: 337W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT11F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 46A
Power dissipation: 337W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 46A
Power dissipation: 337W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT11N80BC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT11N80BC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R2BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R2BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R2BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R2BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R4BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R4BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4SFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Produkt ist nicht verfügbar
| APT1201R4SFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R5BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R5BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R5BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Produkt ist nicht verfügbar
| APT1201R5BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 230nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 230nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R6BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 230nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 230nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
| APT1201R6BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 230nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 230nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R6SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 230nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 230nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12031JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 120A
Power dissipation: 690W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 120A
Power dissipation: 690W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT12031JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 120A
Power dissipation: 690W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 120A
Power dissipation: 690W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12040JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 700W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 700W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT12040JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 700W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 26A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 700W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12040L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Produkt ist nicht verfügbar
| APT12040L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 275nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1204R7BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Produkt ist nicht verfügbar
| APT1204R7BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1204R7SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Produkt ist nicht verfügbar
| APT1204R7SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Drain-source voltage: 1.2kV
Drain current: 3.5A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12057B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12057B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 19A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 76A
Power dissipation: 520W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 19A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 76A
Power dissipation: 520W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT12057JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 19A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 76A
Power dissipation: 520W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 19A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 76A
Power dissipation: 520W
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
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