Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3162) > Seite 27 nach 53
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT35GN120BG | MICROCHIP (MICROSEMI) |
APT35GN120BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT35GN120L2DQ2G | MICROCHIP (MICROSEMI) |
APT35GN120L2DQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT35GN120SG | MICROCHIP (MICROSEMI) |
APT35GN120SG SMD IGBT transistors |
Produkt ist nicht verfügbar |
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| APT35GP120B2D2G | MICROCHIP (MICROSEMI) | APT35GP120B2D2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT35GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max Type of transistor: IGBT Collector current: 46A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 150nC |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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APT35GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max Type of transistor: IGBT Collector current: 46A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 150nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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APT35GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3 Type of transistor: IGBT Collector current: 46A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 222ns Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Kind of package: tube Gate charge: 150nC |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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APT35GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3 Type of transistor: IGBT Collector current: 46A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 140A Turn-on time: 36ns Turn-off time: 222ns Collector-emitter voltage: 1.2kV Power dissipation: 543W Technology: POWER MOS 7®; PT Kind of package: tube Gate charge: 150nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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APT35GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Technology: POWER MOS 7®; PT Collector current: 29A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 140A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT35GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Technology: POWER MOS 7®; PT Collector current: 29A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 140A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT35GP120JDQ2 | MICROCHIP (MICROSEMI) |
APT35GP120JDQ2 IGBT modules |
Produkt ist nicht verfügbar |
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| APT35GT120JU2 | MICROCHIP (MICROSEMI) |
APT35GT120JU2 IGBT modules |
Produkt ist nicht verfügbar |
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| APT35GT120JU3 | MICROCHIP (MICROSEMI) |
APT35GT120JU3 IGBT modules |
Produkt ist nicht verfügbar |
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| APT36GA60B | MICROCHIP (MICROSEMI) |
APT36GA60B THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT36GA60BD15 | MICROCHIP (MICROSEMI) |
APT36GA60BD15 THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT36GA60SD15 | MICROCHIP (MICROSEMI) |
APT36GA60SD15 SMD IGBT transistors |
Produkt ist nicht verfügbar |
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APT37F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Pulsed drain current: 115A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 145nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT37F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Pulsed drain current: 115A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 145nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT37F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Pulsed drain current: 115A Power dissipation: 520W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 145nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT37F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Pulsed drain current: 115A Power dissipation: 520W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 145nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT37M100B2 | MICROCHIP (MICROSEMI) |
APT37M100B2 THT N channel transistors |
Produkt ist nicht verfügbar |
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| APT37M100L | MICROCHIP (MICROSEMI) |
APT37M100L THT N channel transistors |
Produkt ist nicht verfügbar |
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| APT38F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W Type of module: MOSFET transistor Case: ISOTOP Polarisation: unipolar Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 175A Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 355W |
Produkt ist nicht verfügbar |
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| APT38F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W Type of module: MOSFET transistor Case: ISOTOP Polarisation: unipolar Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 175A Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 355W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT38F80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Pulsed drain current: 150A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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APT38F80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Pulsed drain current: 150A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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APT38F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 150A Drain-source voltage: 800V Drain current: 26A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW |
Produkt ist nicht verfügbar |
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APT38F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 150A Drain-source voltage: 800V Drain current: 26A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT38M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W Type of module: MOSFET transistor Case: ISOTOP Polarisation: unipolar Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 175A Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 357W |
Produkt ist nicht verfügbar |
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| APT38M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W Type of module: MOSFET transistor Case: ISOTOP Polarisation: unipolar Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 175A Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 357W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT39F60J | MICROCHIP (MICROSEMI) |
APT39F60J Transistor modules MOSFET |
Produkt ist nicht verfügbar |
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| APT39M60J | MICROCHIP (MICROSEMI) |
APT39M60J Transistor modules MOSFET |
Produkt ist nicht verfügbar |
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| APT4014BVFRG | MICROCHIP (MICROSEMI) | APT4014BVFRG THT N channel transistors |
Produkt ist nicht verfügbar |
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APT4020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A Mounting: THT Case: TO247-3 On-state resistance: 0.2Ω Pulsed drain current: 92A Drain-source voltage: 400V Drain current: 23A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 0.12µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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APT4020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A Mounting: THT Case: TO247-3 On-state resistance: 0.2Ω Pulsed drain current: 92A Drain-source voltage: 400V Drain current: 23A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 0.12µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40DQ100BCTG | MICROCHIP (MICROSEMI) |
APT40DQ100BCTG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT40DQ100BG | MICROCHIP (MICROSEMI) |
APT40DQ100BG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT40DQ120BG | MICROCHIP (MICROSEMI) |
APT40DQ120BG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT40DQ120SG | MICROCHIP (MICROSEMI) |
APT40DQ120SG SMD universal diodes |
Produkt ist nicht verfügbar |
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| APT40DQ60BCTG | MICROCHIP (MICROSEMI) |
APT40DQ60BCTG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT40DQ60BG | MICROCHIP (MICROSEMI) |
APT40DQ60BG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B |
Produkt ist nicht verfügbar |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40GF120JRD | MICROCHIP (MICROSEMI) | APT40GF120JRD IGBT modules |
Produkt ist nicht verfügbar |
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| APT40GF120JRDQ2 | MICROCHIP (MICROSEMI) |
APT40GF120JRDQ2 IGBT modules |
Produkt ist nicht verfügbar |
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| APT40GL120JU2 | MICROCHIP (MICROSEMI) |
APT40GL120JU2 IGBT modules |
Produkt ist nicht verfügbar |
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| APT40GL120JU3 | MICROCHIP (MICROSEMI) |
APT40GL120JU3 IGBT modules |
Produkt ist nicht verfügbar |
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| APT40GLQ120JCU2 | MICROCHIP (MICROSEMI) |
APT40GLQ120JCU2 IGBT modules |
Produkt ist nicht verfügbar |
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| APT40GP60B2DQ2G | MICROCHIP (MICROSEMI) |
APT40GP60B2DQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT40GP60BG | MICROCHIP (MICROSEMI) |
APT40GP60BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40GP90B2DQ2G | MICROCHIP (MICROSEMI) |
APT40GP90B2DQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT40GP90BG | MICROCHIP (MICROSEMI) |
APT40GP90BG THT IGBT transistors |
Produkt ist nicht verfügbar |
| APT35GA90BD15 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT35GA90BD15 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT35GN120BG |
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Hersteller: MICROCHIP (MICROSEMI)
APT35GN120BG THT IGBT transistors
APT35GN120BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GN120L2DQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
APT35GN120L2DQ2G THT IGBT transistors
APT35GN120L2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GN120SG |
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Hersteller: MICROCHIP (MICROSEMI)
APT35GN120SG SMD IGBT transistors
APT35GN120SG SMD IGBT transistors
Produkt ist nicht verfügbar
| APT35GP120B2D2G |
Hersteller: MICROCHIP (MICROSEMI)
APT35GP120B2D2G THT IGBT transistors
APT35GP120B2D2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GP120B2DQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 75.35 EUR |
| APT35GP120B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Type of transistor: IGBT
Collector current: 46A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 0.22µs
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 75.35 EUR |
| APT35GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.78 EUR |
| APT35GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 46A; 543W; TO247-3
Type of transistor: IGBT
Collector current: 46A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Turn-on time: 36ns
Turn-off time: 222ns
Collector-emitter voltage: 1.2kV
Power dissipation: 543W
Technology: POWER MOS 7®; PT
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.78 EUR |
| APT35GP120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| APT35GP120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 29A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| APT35GP120JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GP120JDQ2 IGBT modules
APT35GP120JDQ2 IGBT modules
Produkt ist nicht verfügbar
| APT35GT120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GT120JU2 IGBT modules
APT35GT120JU2 IGBT modules
Produkt ist nicht verfügbar
| APT35GT120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GT120JU3 IGBT modules
APT35GT120JU3 IGBT modules
Produkt ist nicht verfügbar
| APT36GA60B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60B THT IGBT transistors
APT36GA60B THT IGBT transistors
Produkt ist nicht verfügbar
| APT36GA60BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60BD15 THT IGBT transistors
APT36GA60BD15 THT IGBT transistors
Produkt ist nicht verfügbar
| APT36GA60SD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60SD15 SMD IGBT transistors
APT36GA60SD15 SMD IGBT transistors
Produkt ist nicht verfügbar
| APT37F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 145nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 145nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT37F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 145nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 145nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT37F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT37F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Pulsed drain current: 115A
Power dissipation: 520W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT37M100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT37M100B2 THT N channel transistors
APT37M100B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT37M100L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT37M100L THT N channel transistors
APT37M100L THT N channel transistors
Produkt ist nicht verfügbar
| APT38F50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Produkt ist nicht verfügbar
| APT38F50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38F80B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.07 EUR |
| APT38F80B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.07 EUR |
| APT38F80L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Drain-source voltage: 800V
Drain current: 26A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Drain-source voltage: 800V
Drain current: 26A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
| APT38F80L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Drain-source voltage: 800V
Drain current: 26A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Drain-source voltage: 800V
Drain current: 26A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38M50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Produkt ist nicht verfügbar
| APT38M50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Type of module: MOSFET transistor
Case: ISOTOP
Polarisation: unipolar
Mechanical mounting: screw
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 175A
Electrical mounting: screw
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT39F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT39F60J Transistor modules MOSFET
APT39F60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT39M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT39M60J Transistor modules MOSFET
APT39M60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT4014BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
APT4014BVFRG THT N channel transistors
APT4014BVFRG THT N channel transistors
Produkt ist nicht verfügbar
| APT4020BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT4020BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40DQ100BCTG THT universal diodes
APT40DQ100BCTG THT universal diodes
Produkt ist nicht verfügbar
| APT40DQ100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40DQ100BG THT universal diodes
APT40DQ100BG THT universal diodes
Produkt ist nicht verfügbar
| APT40DQ120BG |
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Hersteller: MICROCHIP (MICROSEMI)
APT40DQ120BG THT universal diodes
APT40DQ120BG THT universal diodes
Produkt ist nicht verfügbar
| APT40DQ120SG |
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Hersteller: MICROCHIP (MICROSEMI)
APT40DQ120SG SMD universal diodes
APT40DQ120SG SMD universal diodes
Produkt ist nicht verfügbar
| APT40DQ60BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40DQ60BCTG THT universal diodes
APT40DQ60BCTG THT universal diodes
Produkt ist nicht verfügbar
| APT40DQ60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40DQ60BG THT universal diodes
APT40DQ60BG THT universal diodes
Produkt ist nicht verfügbar
| APT40DR160HJ |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Produkt ist nicht verfügbar
| APT40DR160HJ |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GF120JRD |
Hersteller: MICROCHIP (MICROSEMI)
APT40GF120JRD IGBT modules
APT40GF120JRD IGBT modules
Produkt ist nicht verfügbar
| APT40GF120JRDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GF120JRDQ2 IGBT modules
APT40GF120JRDQ2 IGBT modules
Produkt ist nicht verfügbar
| APT40GL120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GL120JU2 IGBT modules
APT40GL120JU2 IGBT modules
Produkt ist nicht verfügbar
| APT40GL120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GL120JU3 IGBT modules
APT40GL120JU3 IGBT modules
Produkt ist nicht verfügbar
| APT40GLQ120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GLQ120JCU2 IGBT modules
APT40GLQ120JCU2 IGBT modules
Produkt ist nicht verfügbar
| APT40GP60B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP60B2DQ2G THT IGBT transistors
APT40GP60B2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP60BG THT IGBT transistors
APT40GP60BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT40GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT40GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GP90B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP90B2DQ2G THT IGBT transistors
APT40GP90B2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP90BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP90BG THT IGBT transistors
APT40GP90BG THT IGBT transistors
Produkt ist nicht verfügbar