APT37F50S MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details APT37F50S MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 500V 37A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V.
Weitere Produktangebote APT37F50S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT37F50S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 37A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT37F50S | Hersteller : Microsemi | MOSFET Power FREDFET - MOS8 |
Produkt ist nicht verfügbar |
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APT37F50S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK Drain-source voltage: 500V Drain current: 24A Case: D3PAK Mounting: SMD Polarisation: unipolar On-state resistance: 0.15Ω Pulsed drain current: 115A Power dissipation: 520W Technology: POWER MOS 8® Kind of channel: enhanced Gate charge: 145nC Gate-source voltage: ±30V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |