Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75522) > Seite 67 nach 1259
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ZLLS2000TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 65pF @ 30V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: SOT-23-6 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 30 V |
auf Bestellung 1427888 Stücke: Lieferzeit 10-14 Tag (e) |
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ZLLS1000TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 28pF @ 30V, 1MHz Current - Average Rectified (Io): 1.16A Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 30 V |
auf Bestellung 2123101 Stücke: Lieferzeit 10-14 Tag (e) |
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ZLLS500TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 30V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
auf Bestellung 216627 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2A02N8TA | Diodes Incorporated |
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auf Bestellung 749 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2A14FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V |
auf Bestellung 21197 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A14FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V |
auf Bestellung 77677 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXM64N035GTA | Diodes Incorporated |
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ZXMP3A16GTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V |
auf Bestellung 4762 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXM64P035GTA | Diodes Incorporated |
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ZXMN6A09GTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V |
auf Bestellung 64870 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11ZTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V |
auf Bestellung 38357 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A18DN8TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
auf Bestellung 54254 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17GTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
auf Bestellung 54001 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17DN8TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.81W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 15623 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A13GTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V |
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ZXMP6A17E6TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 447335 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A13FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V |
auf Bestellung 9514 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10B08E6TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V |
auf Bestellung 317068 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXM41N10FTA | Diodes Incorporated |
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ZXMP10A18GTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
auf Bestellung 22656 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A17E6TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V |
auf Bestellung 386925 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A13FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V |
auf Bestellung 71651 Stücke: Lieferzeit 10-14 Tag (e) |
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ZAMP001H6TA | Diodes Incorporated |
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auf Bestellung 2601 Stücke: Lieferzeit 10-14 Tag (e) |
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ZAMP002H6TA | Diodes Incorporated |
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auf Bestellung 2723 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54ST-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
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SD103ATW-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 175mA Supplier Device Package: SOT-363 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
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MMBD3004BRM-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 225mA (DC) Supplier Device Package: SOT-26 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V |
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2N7002T-7 | Diodes Incorporated |
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BSS8402DW-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Discontinued at Digi-Key |
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SDM10M45SD-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-26 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
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BAV199T-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 125mA (DC) Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
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SBM340-13 | Diodes Incorporated |
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SBM540-13 | Diodes Incorporated |
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TB0640H-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 200pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 77V Voltage - Off State: 58V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
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TB0640L-13 | Diodes Incorporated |
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TB0720H-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 200pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 88V Voltage - Off State: 65V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
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TB1100M-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Capacitance: 90pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 130V Voltage - Off State: 90V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 250 A |
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TB1300M-13 | Diodes Incorporated |
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TB1800L-13 | Diodes Incorporated |
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TB2300L-13 | Diodes Incorporated |
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TB3100M-13 | Diodes Incorporated |
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TB3500H-13 | Diodes Incorporated |
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TB3500L-13 | Diodes Incorporated |
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TB3500M-13 | Diodes Incorporated |
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BAT54ST-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
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SD103ATW-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 175mA Supplier Device Package: SOT-363 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
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2N7002T-7 | Diodes Incorporated |
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BSS8402DW-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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SDM10M45SD-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-26 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar |
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BAV199T-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 125mA (DC) Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
Produkt ist nicht verfügbar |
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SBM340-13 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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SBM540-13 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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TB0640H-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Capacitance: 200pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 77V Voltage - Off State: 58V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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TB0640L-13 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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TB0720H-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Capacitance: 200pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 88V Voltage - Off State: 65V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
Produkt ist nicht verfügbar |
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TB0720M-13 | Diodes Incorporated |
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auf Bestellung 8384 Stücke: Lieferzeit 10-14 Tag (e) |
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TB0900L-13 | Diodes Incorporated |
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auf Bestellung 549 Stücke: Lieferzeit 10-14 Tag (e) |
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TB1100L-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Capacitance: 60pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 130V Voltage - Off State: 90V Voltage - On State: 3.5 V Supplier Device Package: SMB Grade: Automotive Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 30 A Current - Peak Pulse (8/20µs): 150 A Qualification: AEC-Q101 |
auf Bestellung 2819 Stücke: Lieferzeit 10-14 Tag (e) |
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TB1300M-13 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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TB1800L-13 | Diodes Incorporated |
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auf Bestellung 2317 Stücke: Lieferzeit 10-14 Tag (e) |
ZLLS2000TA |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: SOT-23-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Description: DIODE SCHOTTKY 40V 2.2A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: SOT-23-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
auf Bestellung 1427888 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.13 EUR |
100+ | 0.78 EUR |
500+ | 0.65 EUR |
1000+ | 0.56 EUR |
ZLLS1000TA |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Current - Average Rectified (Io): 1.16A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Description: DIODE SCHOTTKY 40V 1.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Current - Average Rectified (Io): 1.16A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
auf Bestellung 2123101 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.36 EUR |
ZLLS500TA |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE SCHOTTKY 40V 700MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 216627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
26+ | 0.69 EUR |
100+ | 0.48 EUR |
500+ | 0.38 EUR |
1000+ | 0.31 EUR |
ZXMN2A02N8TA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
Description: MOSFET N-CH 20V 8.3A 8-SOIC
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)ZXMN2A14FTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
auf Bestellung 21197 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.92 EUR |
23+ | 0.79 EUR |
100+ | 0.55 EUR |
500+ | 0.43 EUR |
1000+ | 0.35 EUR |
ZXMN3A14FTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Description: MOSFET N-CH 30V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 77677 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.87 EUR |
100+ | 0.6 EUR |
500+ | 0.5 EUR |
1000+ | 0.43 EUR |
ZXM64N035GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
ZXMP3A16GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Description: MOSFET P-CH 30V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 4762 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
15+ | 1.26 EUR |
100+ | 0.98 EUR |
500+ | 0.83 EUR |
ZXM64P035GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
ZXMN6A09GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
auf Bestellung 64870 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
11+ | 1.67 EUR |
100+ | 1.3 EUR |
500+ | 1.1 EUR |
ZXMN6A11ZTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
Description: MOSFET N-CH 60V 2.7A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 38357 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.05 EUR |
100+ | 0.73 EUR |
500+ | 0.61 EUR |
ZXMP6A18DN8TA |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 54254 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.55 EUR |
10+ | 2.09 EUR |
100+ | 1.63 EUR |
ZXMP6A17GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 54001 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.48 EUR |
ZXMP6A17DN8TA |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15623 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
13+ | 1.41 EUR |
100+ | 1.1 EUR |
ZXMP6A13GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Produkt ist nicht verfügbar
ZXMP6A17E6TA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 447335 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.36 EUR |
ZXMP6A13FTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 9514 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
24+ | 0.76 EUR |
100+ | 0.53 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
ZXMN10B08E6TA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
auf Bestellung 317068 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.23 EUR |
17+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
ZXM41N10FTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
ZXMP10A18GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 22656 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.96 EUR |
10+ | 2.45 EUR |
100+ | 1.95 EUR |
500+ | 1.65 EUR |
ZXMP10A17E6TA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 386925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.23 EUR |
17+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
ZXMP10A13FTA |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
auf Bestellung 71651 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.44 EUR |
1000+ | 0.36 EUR |
ZAMP001H6TA |
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Hersteller: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
Description: AMPLIFIER 18DB GAIN LNA SC70-6
auf Bestellung 2601 Stücke:
Lieferzeit 10-14 Tag (e)ZAMP002H6TA |
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Hersteller: Diodes Incorporated
Description: AMPLIFIER 23DB GAIN HP SC70-6
Description: AMPLIFIER 23DB GAIN HP SC70-6
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)BAT54ST-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
SD103ATW-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
MMBD3004BRM-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Description: DIODE ARRAY GP 300V 225MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
2N7002T-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Description: MOSFET N-CH 60V 115MA SOT-523
Produkt ist nicht verfügbar
BSS8402DW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SDM10M45SD-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
BAV199T-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE ARRAY GP 85V 125MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
SBM340-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
SBM540-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Produkt ist nicht verfügbar
TB0640H-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 58V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
TB0640L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
TB0720H-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 65V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
TB1100M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Description: THYRISTOR 90V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
TB1300M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 250A DO214AA
Description: THYRISTOR 120V 250A DO214AA
Produkt ist nicht verfügbar
TB1800L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
TB2300L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 150A DO214AA
Description: THYRISTOR 190V 150A DO214AA
Produkt ist nicht verfügbar
TB3100M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 250A DO214AA
Description: THYRISTOR 275V 250A DO214AA
Produkt ist nicht verfügbar
TB3500H-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Description: THYRISTOR PROTECT BIDIR 100A SMB
Produkt ist nicht verfügbar
TB3500L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
TB3500M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Produkt ist nicht verfügbar
BAT54ST-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
SD103ATW-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
2N7002T-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Description: MOSFET N-CH 60V 115MA SOT-523
Produkt ist nicht verfügbar
BSS8402DW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SDM10M45SD-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
BAV199T-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE ARRAY GP 85V 125MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
SBM340-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
SBM540-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Produkt ist nicht verfügbar
TB0640H-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 58V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)TB0640L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
TB0720H-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 65V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
TB0720M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 250A DO214AA
Description: THYRISTOR 65V 250A DO214AA
auf Bestellung 8384 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.58 EUR |
13+ | 1.42 EUR |
100+ | 1.11 EUR |
500+ | 0.92 EUR |
1000+ | 0.72 EUR |
TB0900L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 75V 150A DO214AA
Description: THYRISTOR 75V 150A DO214AA
auf Bestellung 549 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.64 EUR |
12+ | 1.47 EUR |
100+ | 1.15 EUR |
500+ | 0.95 EUR |
TB1100L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 150A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Grade: Automotive
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 150 A
Qualification: AEC-Q101
Description: THYRISTOR 90V 150A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Grade: Automotive
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 150 A
Qualification: AEC-Q101
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.53 EUR |
14+ | 1.26 EUR |
100+ | 0.98 EUR |
500+ | 0.83 EUR |
1000+ | 0.68 EUR |
TB1300M-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 250A DO214AA
Description: THYRISTOR 120V 250A DO214AA
Produkt ist nicht verfügbar
TB1800L-13 |
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Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Description: THYRISTOR PROTECT BI-DIR 30A SMB
auf Bestellung 2317 Stücke:
Lieferzeit 10-14 Tag (e)