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ZXMP6A17DN8TA

ZXMP6A17DN8TA Diodes Incorporated

ZXMP6A17DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+0.96 EUR
1000+ 0.78 EUR
2500+ 0.74 EUR
5000+ 0.7 EUR
12500+ 0.67 EUR
Mindestbestellmenge: 500
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Technische Details ZXMP6A17DN8TA Diodes Incorporated

Description: MOSFET 2P-CH 60V 2.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote ZXMP6A17DN8TA nach Preis ab 0.76 EUR bis 1.78 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ZXMP6A17DN8TA ZXMP6A17DN8TA Hersteller : Diodes Incorporated DIOD_S_A0003133143_1-2542249.pdf MOSFET Dl 60V P-Chnl UMOS
auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.75 EUR
10+ 1.45 EUR
100+ 1.12 EUR
500+ 0.94 EUR
1000+ 0.78 EUR
2500+ 0.76 EUR
Mindestbestellmenge: 2
ZXMP6A17DN8TA ZXMP6A17DN8TA Hersteller : Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.46 EUR
100+ 1.13 EUR
Mindestbestellmenge: 10
ZXMP6A17DN8TA ZXMP6A17DN8.pdf
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMP6A17DN8TA ZXMP6A17DN8TA Hersteller : Diodes Inc 270862723625481zxmp6a17dn8.pdf Trans MOSFET P-CH 60V 2.7A 8-Pin SOIC T/R
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