Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75942) > Seite 264 nach 1266
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DDZX39F-13 | Diodes Incorporated |
 Description: DIODE ZENER 39V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DDZX43-13 | Diodes Incorporated |
Description: DIODE ZENER 43V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DDZX5V1B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DDZX5V6B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 300MW SOT23 |
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DDZX6V2B-13 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DDZX6V8C-13 | Diodes Incorporated |
Description: DIODE ZENER 6.8V 300MW SOT23 Tolerance: ±2.56% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 5 V |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX7V5C-13 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 300MW SOT23 Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 6 V |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX8V2C-13 | Diodes Incorporated |
Description: DIODE ZENER 8.2V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DDZX9V1C-13 | Diodes Incorporated |
Description: DIODE ZENER 9.1V 300MW SOT23 |
Produkt ist nicht verfügbar |
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DESD6V8DLP-7B | Diodes Incorporated |
Description: TVS DIODE 5.25VWM 3-X1DFN1006 Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 5.25V Supplier Device Package: X1-DFN1006-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.4V Power - Peak Pulse: 70W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF1501S | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1.5A DF-S |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF1508S | Diodes Incorporated |
Description: BRIDGE RECT 1P 800V 1.5A DF-S Packaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DFLF1800-7 | Diodes Incorporated |
Description: DIODE GP 800V 1A POWERDI123 |
Produkt ist nicht verfügbar |
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DFLS260-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A PWRDI123 Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
auf Bestellung 2668926 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3032LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4407SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4468LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
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DMG4812SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMG7401SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8 |
Produkt ist nicht verfügbar |
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DMG7702SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI3333 |
Produkt ist nicht verfügbar |
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 350000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004TK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 540MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V |
auf Bestellung 609000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2300UFB-7B | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.32A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Power Dissipation (Max): 468mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2501UFB4-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 1A X2-DFN1006-3 |
auf Bestellung 102000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2600UFB-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 1.3A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V |
auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3024SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
Produkt ist nicht verfügbar |
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DMN3025LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3051LDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN66D0LW-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 115MA SOT323 |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1045U-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V |
auf Bestellung 855000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1045UFY4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2008UFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333 |
Produkt ist nicht verfügbar |
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DMP210DUDJ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.2A SOT-963 |
Produkt ist nicht verfügbar |
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DMP2160UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 534000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP21D0UFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 770MA 3DFN |
Produkt ist nicht verfügbar |
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DMP3008SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8 |
Produkt ist nicht verfügbar |
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DMP3035SFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3120L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.8A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP4015SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 9.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
auf Bestellung 67500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4025SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 4.65A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V |
auf Bestellung 624000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP58D0LFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMS3012SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI |
Produkt ist nicht verfügbar |
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DN0150ALP4-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
Produkt ist nicht verfügbar |
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DN0150BLP4-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A X1-DFN1006-3 |
Produkt ist nicht verfügbar |
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DP0150ALP4-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.1A X1DFN10063 |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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DP0150BLP4-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: X2-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW |
auf Bestellung 2259000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSRHD10-13 | Diodes Incorporated |
Description: BRIDGE RECT 1P 1KV 1A 4-TMINIDIP |
Produkt ist nicht verfügbar |
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DSS5240Y-7 | Diodes Incorporated |
Description: TRANS PNP 40V 2A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V Frequency - Transition: 220MHz Supplier Device Package: SOT-363 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS5320T-7 | Diodes Incorporated |
Description: TRANS PNP 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS5540X-13 | Diodes Incorporated |
Description: TRANS PNP 40V 4A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 60MHz Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 900 mW |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS8110Y-7 | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT363 |
Produkt ist nicht verfügbar |
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DSS9110Y-7 | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT363 |
Produkt ist nicht verfügbar |
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DXTP03200BP5-13 | Diodes Incorporated |
Description: TRANS PNP 200V 2A POWERDI5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 105MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 3.2 W |
auf Bestellung 85000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM4040B25FTA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SOT23 Tolerance: ±0.2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.5V Noise - 10Hz to 10kHz: 35µVrms Part Status: Active Current - Cathode: 68 µA Current - Output: 15 mA |
auf Bestellung 906000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM4040B25H5TA | Diodes Incorporated |
Description: IC VREF SHUNT 2.5V SC70 |
Produkt ist nicht verfügbar |
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LM4040B30FTA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SOT23 |
Produkt ist nicht verfügbar |
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LM4040B30H5TA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SC70-5 |
Produkt ist nicht verfügbar |
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LM4040B50FTA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SOT23 Tolerance: ±0.2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 5V Noise - 10Hz to 10kHz: 80µVrms Part Status: Active Current - Cathode: 83 µA Current - Output: 15 mA |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM4040B50H5TA | Diodes Incorporated |
Description: IC VREF SHUNT 0.2% SC70-5 |
Produkt ist nicht verfügbar |
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LM4040C25H5TA | Diodes Incorporated |
Description: IC VREF SHUNT 0.5% SC70-5 Tolerance: ±0.5% Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 2.5V Noise - 10Hz to 10kHz: 35µVrms Current - Cathode: 68 µA Current - Output: 15 mA |
Produkt ist nicht verfügbar |
| DDZX39F-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 300MW SOT23
Description: DIODE ZENER 39V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX43-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23
Description: DIODE ZENER 43V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX5V1B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX5V6B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 300MW SOT23
Description: DIODE ZENER 5.6V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX6V2B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 300MW SOT23
Description: DIODE ZENER 6.2V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX6V8C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Description: DIODE ZENER 6.8V 300MW SOT23
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.052 EUR |
| 30000+ | 0.051 EUR |
| 50000+ | 0.046 EUR |
| DDZX7V5C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.058 EUR |
| 30000+ | 0.057 EUR |
| 50000+ | 0.051 EUR |
| 100000+ | 0.045 EUR |
| DDZX8V2C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
Description: DIODE ZENER 8.2V 300MW SOT23
Produkt ist nicht verfügbar
| DDZX9V1C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Description: DIODE ZENER 9.1V 300MW SOT23
Produkt ist nicht verfügbar
| DESD6V8DLP-7B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.25VWM 3-X1DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: X1-DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.4V
Power - Peak Pulse: 70W
Power Line Protection: No
Description: TVS DIODE 5.25VWM 3-X1DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: X1-DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.4V
Power - Peak Pulse: 70W
Power Line Protection: No
Produkt ist nicht verfügbar
| DF1501S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1.5A DF-S
Description: BRIDGE RECT 1P 100V 1.5A DF-S
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.36 EUR |
| DF1508S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.22 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 0.97 EUR |
| 2000+ | 0.92 EUR |
| DFLF1800-7 |
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Hersteller: Diodes Incorporated
Description: DIODE GP 800V 1A POWERDI123
Description: DIODE GP 800V 1A POWERDI123
Produkt ist nicht verfügbar
| DFLS260-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A PWRDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A PWRDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 2668926 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
| DMC3032LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.25 EUR |
| 5000+ | 0.23 EUR |
| 12500+ | 0.22 EUR |
| 25000+ | 0.21 EUR |
| DMG4407SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 12500+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
| DMG4468LFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Description: MOSFET N-CH 30V 7.62A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Produkt ist nicht verfügbar
| DMG4812SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
| DMG7401SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Produkt ist nicht verfügbar
| DMG7702SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Description: MOSFET N-CH 30V 12A POWERDI3333
Produkt ist nicht verfügbar
| DMG9933USD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 350000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
| 12500+ | 0.19 EUR |
| DMN2004TK-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
auf Bestellung 609000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
| DMN2300UFB-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.32A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 468mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Description: MOSFET N-CH 20V 1.32A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 468mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.14 EUR |
| 50000+ | 0.12 EUR |
| DMN2501UFB4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| DMN2600UFB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.093 EUR |
| 9000+ | 0.077 EUR |
| 30000+ | 0.076 EUR |
| 75000+ | 0.068 EUR |
| 150000+ | 0.059 EUR |
| DMN3024SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Produkt ist nicht verfügbar
| DMN3025LFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| DMN3051LDM-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Description: MOSFET N-CH 30V 4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 15000+ | 0.22 EUR |
| 30000+ | 0.21 EUR |
| DMN66D0LW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT323
Description: MOSFET N-CH 60V 115MA SOT323
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)| DMP1045U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
auf Bestellung 855000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 30000+ | 0.13 EUR |
| 75000+ | 0.11 EUR |
| DMP1045UFY4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2015H4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2015H4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 75000+ | 0.17 EUR |
| DMP2008UFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Description: MOSFET P-CH 20V 14A PWRDI3333
Produkt ist nicht verfügbar
| DMP210DUDJ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Produkt ist nicht verfügbar
| DMP2160UFDB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 534000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| DMP21D0UFB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 770MA 3DFN
Description: MOSFET P-CH 20V 770MA 3DFN
Produkt ist nicht verfügbar
| DMP3008SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Produkt ist nicht verfügbar
| DMP3035SFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.28 EUR |
| 6000+ | 0.27 EUR |
| 10000+ | 0.25 EUR |
| DMP3120L-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Produkt ist nicht verfügbar
| DMP4015SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.49 EUR |
| 5000+ | 0.46 EUR |
| 12500+ | 0.43 EUR |
| DMP4025SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.65A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Description: MOSFET P-CH 40V 4.65A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
auf Bestellung 624000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
| DMP58D0LFB-7 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
| DMS3012SFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI
Description: MOSFET N-CH 30V 12A POWERDI
Produkt ist nicht verfügbar
| DN0150ALP4-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Produkt ist nicht verfügbar
| DN0150BLP4-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
Produkt ist nicht verfügbar
| DP0150ALP4-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X1DFN10063
Description: TRANS PNP 50V 0.1A X1DFN10063
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)| DP0150BLP4-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Description: TRANS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
auf Bestellung 2259000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
| 75000+ | 0.19 EUR |
| DSRHD10-13 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 1A 4-TMINIDIP
Description: BRIDGE RECT 1P 1KV 1A 4-TMINIDIP
Produkt ist nicht verfügbar
| DSS5240Y-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.099 EUR |
| DSS5320T-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.09 EUR |
| DSS5540X-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 4A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 900 mW
Description: TRANS PNP 40V 4A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 900 mW
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.26 EUR |
| 5000+ | 0.25 EUR |
| 12500+ | 0.23 EUR |
| 25000+ | 0.22 EUR |
| DSS8110Y-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT363
Description: TRANS NPN 100V 1A SOT363
Produkt ist nicht verfügbar
| DSS9110Y-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT363
Description: TRANS PNP 100V 1A SOT363
Produkt ist nicht verfügbar
| DXTP03200BP5-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 3.2 W
Description: TRANS PNP 200V 2A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 3.2 W
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.45 EUR |
| 10000+ | 0.42 EUR |
| 25000+ | 0.41 EUR |
| LM4040B25FTA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Part Status: Active
Current - Cathode: 68 µA
Current - Output: 15 mA
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Part Status: Active
Current - Cathode: 68 µA
Current - Output: 15 mA
auf Bestellung 906000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.53 EUR |
| 15000+ | 0.51 EUR |
| 30000+ | 0.49 EUR |
| LM4040B25H5TA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2.5V SC70
Description: IC VREF SHUNT 2.5V SC70
Produkt ist nicht verfügbar
| LM4040B30FTA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Description: IC VREF SHUNT 0.2% SOT23
Produkt ist nicht verfügbar
| LM4040B30H5TA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SC70-5
Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
| LM4040B50FTA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Noise - 10Hz to 10kHz: 80µVrms
Part Status: Active
Current - Cathode: 83 µA
Current - Output: 15 mA
Description: IC VREF SHUNT 0.2% SOT23
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Noise - 10Hz to 10kHz: 80µVrms
Part Status: Active
Current - Cathode: 83 µA
Current - Output: 15 mA
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.53 EUR |
| 15000+ | 0.51 EUR |
| 30000+ | 0.49 EUR |
| LM4040B50H5TA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SC70-5
Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
| LM4040C25H5TA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.5% SC70-5
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 68 µA
Current - Output: 15 mA
Description: IC VREF SHUNT 0.5% SC70-5
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Current - Cathode: 68 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar