| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SIHFU9310-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SUP70040E-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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M64X503KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear Operating temperature: -55...155°C IP rating: IP67 Track material: cermet Kind of potentiometer: multiturn Mounting: THT Power: 0.5W Resistance: 50kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm |
Produkt ist nicht verfügbar |
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M64X502KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear Operating temperature: -55...155°C IP rating: IP67 Track material: cermet Kind of potentiometer: multiturn Mounting: THT Power: 0.5W Resistance: 5kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm |
Produkt ist nicht verfügbar |
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MAL213661102E3 | VISHAY |
 Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x31mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Impedance: 30mΩ Operating temperature: -55...105°C Leads dimensions: L 5mm |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C2008FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Operating temperature: -55...155°C Power: 0.6W Leads: axial Type of resistor: metal film Resistance: 2Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V |
Produkt ist nicht verfügbar |
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PR02000202008JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial Power: 2W Mounting: THT Leads: axial Type of resistor: power metal Resistance: 2Ω Tolerance: ±5% Body dimensions: Ø3.9x12mm Temperature coefficient: 250ppm/°C Max. operating voltage: 500V Resistor features: high power and small dimension |
Produkt ist nicht verfügbar |
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M64X103KB40 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Operating temperature: -55...155°C Power: 0.5W Resistance: 10kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm Track material: cermet Kind of potentiometer: multiturn Mounting: THT |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040C5111FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 5.11kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
auf Bestellung 2902 Stücke: Lieferzeit 14-21 Tag (e) |
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MMA02040C5111FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 5.11kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) |
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| MRS25000C8874FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 8.87MΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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| SI7309DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A |
Produkt ist nicht verfügbar |
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| SI7309DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -60V Drain current: -8A On-state resistance: 146mΩ Type of transistor: P-MOSFET Power dissipation: 19.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A |
Produkt ist nicht verfügbar |
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CRCW020147R0FNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 47Ω Power: 50mW Tolerance: ±1% Max. operating voltage: 30V Operating temperature: -55...155°C |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW060347R0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 47Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 9100 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW060347R0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 47Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 99900 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW060347R0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 47Ω Operating temperature: -55...155°C Tolerance: ±5% Type of resistor: thick film Max. operating voltage: 75V Power: 0.1W |
Produkt ist nicht verfügbar |
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CRCW060347R0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 47Ω Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 24996 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10Y-E3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 3140 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10Y-M3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| CNY117-3 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Conform to the norm: UL Turn-on time: 4.2µs Turn-off time: 23µs Max. off-state voltage: 6V Manufacturer series: CNY117 |
Produkt ist nicht verfügbar |
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BYG10D-E3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 804 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10G-E3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 1205 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10GHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BYG10J-E3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 1190 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10M-E3/TR | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: DO214AC; SMA Max. forward voltage: 1.15V Leakage current: 10µA Reverse recovery time: 4µs |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG10M-E3/TR3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: DO214AC; SMA Max. forward voltage: 1.15V Leakage current: 10µA Reverse recovery time: 4µs |
Produkt ist nicht verfügbar |
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LCT964MCT06030DB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs. Tolerance: ±0.1% Mounting: SMD Case - inch: 0603 Type of kit: resistors Number of values: 98 Range of values: 47Ω...511kΩ Quantity in set/package: 1960pcs. Case - mm: 1608 |
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LCT964MCT0603MDB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs. Type of kit: resistors Mounting: SMD Quantity in set/package: 1960pcs. Case - mm: 1608 Case - inch: 0603 Tolerance: ±0.1% Number of values: 98 Range of values: 47Ω...511kΩ |
Produkt ist nicht verfügbar |
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| TSTS7500 | VISHAY |
Category: IR LEDs Description: IR transmitter; 4.7mm; TO18; 950nm; 7mW; 30°; THT; 250mA; 1.3÷1.7V Type of diode: IR transmitter LED diameter: 4.7mm Case: TO18 Wavelength: 950nm Optical power: 7mW Viewing angle: 30° Mounting: THT LED current: 250mA LED version: EMITER Operating voltage: 1.3...1.7V |
Produkt ist nicht verfügbar |
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VS-GBPC3506W | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| SUP90100E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI5441BDC-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A Mounting: SMD On-state resistance: 80mΩ Kind of package: reel; tape Technology: TrenchFET® Pulsed drain current: -20A Power dissipation: 2.5W Gate charge: 22nC Polarisation: unipolar Drain current: -6.1A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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| SI5441BDC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A Mounting: SMD On-state resistance: 80mΩ Kind of package: reel; tape Technology: TrenchFET® Pulsed drain current: -20A Power dissipation: 2.5W Gate charge: 22nC Polarisation: unipolar Drain current: -6.1A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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| IRFBE30LPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFBE30STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
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| VS-2EJH02HM3/6B | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 24ns; DO221AC; Ufmax: 0.77V; Ir: 8uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 24ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: DO221AC Max. forward voltage: 0.77V Max. forward impulse current: 65A Leakage current: 8µA Kind of package: reel; tape |
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| VS-3EJH02-M3/6B | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 26ns; DO221AC; Ufmax: 0.78V; Ir: 8uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 26ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 13pF Case: DO221AC Max. forward voltage: 0.78V Max. forward impulse current: 85A Leakage current: 8µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| VS-3EJU06HM3/6A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 82ns; DO221AC; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 82ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 6.2pF Case: DO221AC Max. forward voltage: 1.2V Max. forward impulse current: 43A Leakage current: 0.1mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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VJ0603Y683JXJPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 16V; X7R; ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 16V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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VJ0603Y683KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 25V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3194 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603Y683KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 68nF; 16V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 68nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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| SIZ902DT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Type of transistor: N-MOSFET x2 Mounting: SMD Kind of package: reel; tape Power dissipation: 29/66W On-state resistance: 14.5/8.3mΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 21/65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50...80A Drain current: 16A |
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MBB02070C1005FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 10MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Mounting: THT Resistance: 10MΩ Operating temperature: -55...155°C Leads: axial Tolerance: ±1% Type of resistor: metal film Power: 0.6W Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V |
auf Bestellung 5515 Stücke: Lieferzeit 14-21 Tag (e) |
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VR37000001005JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 10MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C Mounting: THT Resistance: 10MΩ Leads: axial Tolerance: ±5% Type of resistor: metal glaze Power: 0.5W Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Max. operating voltage: 3.5kV DC |
auf Bestellung 6650 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1016X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 515/-390mA Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7/1.25Ω Mounting: SMD Gate charge: 1.5/0.75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI1026X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.13W Case: SC89; SOT563 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI1029X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22/-0.135A Pulsed drain current: 0.65A Power dissipation: 0.13W Case: SC89 Gate-source voltage: ±20V On-state resistance: 3/8Ω Mounting: SMD Gate charge: 0.75/1.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI1034CX-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.49A Power dissipation: 0.14W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 396mΩ Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI1539CDL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 700/-500mA Kind of package: reel; tape Drain-source voltage: 30/-30V Drain current: 700/-500mA On-state resistance: 1.7Ω/525mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.34W Polarisation: unipolar Gate charge: 3/1.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SC70; SOT363 |
Produkt ist nicht verfügbar |
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| SI1553CDL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 700/-500mA Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 700/-500mA Power dissipation: 0.34W Case: SC70; SOT363 Gate-source voltage: ±12V On-state resistance: 1.35/1.13Ω Mounting: SMD Gate charge: 3/1.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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 |
SI1902CDL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.27W Case: SC70 Gate-source voltage: ±12V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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 |
SI1902DL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A Type of transistor: N-MOSFET x2 Case: SC70 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.27W On-state resistance: 630µΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 0.8nC Drain-source voltage: 20V Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1A Drain current: 0.66A |
Produkt ist nicht verfügbar |
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| SI3590DV-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3/-2A Pulsed drain current: 8A Power dissipation: 1.05W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 300/120mΩ Mounting: SMD Gate charge: 6/4.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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 |
SI4288DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4615 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI5504BDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Drain-source voltage: 30/-30V Drain current: 4/-3.7A On-state resistance: 235/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
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| SI5504BDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A Drain-source voltage: 30/-30V Drain current: 4/-3.7A On-state resistance: 235/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 3.1/3.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
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| SI5513CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A |
Produkt ist nicht verfügbar |
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| SI5513CDC-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A |
Produkt ist nicht verfügbar |
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| SI5515CDC-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Polarisation: unipolar Kind of package: reel; tape Power dissipation: 3.1W Gate charge: 11/11.3nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Drain-source voltage: 20/-20V Drain current: 4/-4A On-state resistance: 156/50mΩ Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |
| SIHFU9310-GE3 |
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUP70040E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| M64X503KB40 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 50kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 50kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Produkt ist nicht verfügbar
| M64X502KB40 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 5kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 5kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
IP rating: IP67
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Power: 0.5W
Resistance: 5kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Produkt ist nicht verfügbar
| MAL213661102E3 | |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 30mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 50VDC; Ø16x31mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Impedance: 30mΩ
Operating temperature: -55...105°C
Leads dimensions: L 5mm
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.62 EUR |
| 34+ | 2.12 EUR |
| 36+ | 2 EUR |
| MBB02070C2008FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Power: 0.6W
Leads: axial
Type of resistor: metal film
Resistance: 2Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Category: THT Resistors
Description: Resistor: metal film; THT; 2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Operating temperature: -55...155°C
Power: 0.6W
Leads: axial
Type of resistor: metal film
Resistance: 2Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Produkt ist nicht verfügbar
| PR02000202008JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial
Power: 2W
Mounting: THT
Leads: axial
Type of resistor: power metal
Resistance: 2Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: power metal; THT; 2Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C; axial
Power: 2W
Mounting: THT
Leads: axial
Type of resistor: power metal
Resistance: 2Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Produkt ist nicht verfügbar
| M64X103KB40 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Operating temperature: -55...155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.12 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| SMM02040C5111FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 250mW; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
auf Bestellung 2902 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1600+ | 0.045 EUR |
| MMA02040C5111FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.11kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.11kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 725+ | 0.1 EUR |
| 1175+ | 0.061 EUR |
| MRS25000C8874FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 8.87MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 8.87MΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 8.87MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| SI7309DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Produkt ist nicht verfügbar
| SI7309DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -60V
Drain current: -8A
On-state resistance: 146mΩ
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Produkt ist nicht verfügbar
| CRCW020147R0FNTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 47Ω
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 47Ω; 50mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 47Ω
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4300+ | 0.017 EUR |
| 8000+ | 0.009 EUR |
| 9000+ | 0.008 EUR |
| CRCW060347R0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2440+ | 0.029 EUR |
| 9100+ | 0.0079 EUR |
| CRCW060347R0FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 99900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3300+ | 0.022 EUR |
| 15200+ | 0.0047 EUR |
| 31100+ | 0.0023 EUR |
| 34800+ | 0.0021 EUR |
| 35800+ | 0.002 EUR |
| 36800+ | 0.0019 EUR |
| CRCW060347R0JNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 75V
Power: 0.1W
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 75V
Power: 0.1W
Produkt ist nicht verfügbar
| CRCW060347R0JNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 47Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 47Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 24996 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3600+ | 0.02 EUR |
| 16300+ | 0.0044 EUR |
| BYG10Y-E3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 3140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.27 EUR |
| 320+ | 0.22 EUR |
| 360+ | 0.2 EUR |
| 440+ | 0.16 EUR |
| 465+ | 0.15 EUR |
| BYG10Y-M3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 10µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| CNY117-3 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Conform to the norm: UL
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY117
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Conform to the norm: UL
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY117
Produkt ist nicht verfügbar
| BYG10D-E3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 256+ | 0.28 EUR |
| 397+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| BYG10G-E3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 280+ | 0.26 EUR |
| 390+ | 0.18 EUR |
| 440+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| BYG10GHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 10µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BYG10J-E3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 445+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 560+ | 0.13 EUR |
| 595+ | 0.12 EUR |
| BYG10M-E3/TR |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO214AC; SMA
Max. forward voltage: 1.15V
Leakage current: 10µA
Reverse recovery time: 4µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO214AC; SMA
Max. forward voltage: 1.15V
Leakage current: 10µA
Reverse recovery time: 4µs
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 485+ | 0.15 EUR |
| 545+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| 635+ | 0.11 EUR |
| BYG10M-E3/TR3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO214AC; SMA
Max. forward voltage: 1.15V
Leakage current: 10µA
Reverse recovery time: 4µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO214AC; SMA
Max. forward voltage: 1.15V
Leakage current: 10µA
Reverse recovery time: 4µs
Produkt ist nicht verfügbar
| LCT964MCT06030DB00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0603
Type of kit: resistors
Number of values: 98
Range of values: 47Ω...511kΩ
Quantity in set/package: 1960pcs.
Case - mm: 1608
Category: SMD resistors
Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0603
Type of kit: resistors
Number of values: 98
Range of values: 47Ω...511kΩ
Quantity in set/package: 1960pcs.
Case - mm: 1608
Produkt ist nicht verfügbar
| LCT964MCT0603MDB00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs.
Type of kit: resistors
Mounting: SMD
Quantity in set/package: 1960pcs.
Case - mm: 1608
Case - inch: 0603
Tolerance: ±0.1%
Number of values: 98
Range of values: 47Ω...511kΩ
Category: SMD resistors
Description: Kit: resistors; SMD; 0603; ±0.1%; 47Ω÷511kΩ; No.of val: 98; 1960pcs.
Type of kit: resistors
Mounting: SMD
Quantity in set/package: 1960pcs.
Case - mm: 1608
Case - inch: 0603
Tolerance: ±0.1%
Number of values: 98
Range of values: 47Ω...511kΩ
Produkt ist nicht verfügbar
| TSTS7500 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 4.7mm; TO18; 950nm; 7mW; 30°; THT; 250mA; 1.3÷1.7V
Type of diode: IR transmitter
LED diameter: 4.7mm
Case: TO18
Wavelength: 950nm
Optical power: 7mW
Viewing angle: 30°
Mounting: THT
LED current: 250mA
LED version: EMITER
Operating voltage: 1.3...1.7V
Category: IR LEDs
Description: IR transmitter; 4.7mm; TO18; 950nm; 7mW; 30°; THT; 250mA; 1.3÷1.7V
Type of diode: IR transmitter
LED diameter: 4.7mm
Case: TO18
Wavelength: 950nm
Optical power: 7mW
Viewing angle: 30°
Mounting: THT
LED current: 250mA
LED version: EMITER
Operating voltage: 1.3...1.7V
Produkt ist nicht verfügbar
| VS-GBPC3506W |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: tube
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: tube
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| SUP90100E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI5441BDC-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
| SI5441BDC-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Mounting: SMD
On-state resistance: 80mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Pulsed drain current: -20A
Power dissipation: 2.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: -6.1A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
| IRFBE30LPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFBE30STRLPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| VS-2EJH02HM3/6B |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 24ns; DO221AC; Ufmax: 0.77V; Ir: 8uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO221AC
Max. forward voltage: 0.77V
Max. forward impulse current: 65A
Leakage current: 8µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 24ns; DO221AC; Ufmax: 0.77V; Ir: 8uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 24ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO221AC
Max. forward voltage: 0.77V
Max. forward impulse current: 65A
Leakage current: 8µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| VS-3EJH02-M3/6B |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 26ns; DO221AC; Ufmax: 0.78V; Ir: 8uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 26ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 13pF
Case: DO221AC
Max. forward voltage: 0.78V
Max. forward impulse current: 85A
Leakage current: 8µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 26ns; DO221AC; Ufmax: 0.78V; Ir: 8uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 26ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 13pF
Case: DO221AC
Max. forward voltage: 0.78V
Max. forward impulse current: 85A
Leakage current: 8µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| VS-3EJU06HM3/6A |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 82ns; DO221AC; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 82ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6.2pF
Case: DO221AC
Max. forward voltage: 1.2V
Max. forward impulse current: 43A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 82ns; DO221AC; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 82ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6.2pF
Case: DO221AC
Max. forward voltage: 1.2V
Max. forward impulse current: 43A
Leakage current: 0.1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| VJ0603Y683JXJPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603Y683KXXCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3194 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.024 EUR |
| VJ0603Y683KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| SIZ902DT-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 29/66W
On-state resistance: 14.5/8.3mΩ
Polarisation: unipolar
Technology: TrenchFET®
Gate charge: 21/65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50...80A
Drain current: 16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 29/66W
On-state resistance: 14.5/8.3mΩ
Polarisation: unipolar
Technology: TrenchFET®
Gate charge: 21/65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50...80A
Drain current: 16A
Produkt ist nicht verfügbar
| MBB02070C1005FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 10MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Resistance: 10MΩ
Operating temperature: -55...155°C
Leads: axial
Tolerance: ±1%
Type of resistor: metal film
Power: 0.6W
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Category: THT Resistors
Description: Resistor: metal film; THT; 10MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Mounting: THT
Resistance: 10MΩ
Operating temperature: -55...155°C
Leads: axial
Tolerance: ±1%
Type of resistor: metal film
Power: 0.6W
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
auf Bestellung 5515 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 447+ | 0.16 EUR |
| 557+ | 0.13 EUR |
| 616+ | 0.12 EUR |
| 1193+ | 0.06 EUR |
| 1262+ | 0.057 EUR |
| VR37000001005JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 10MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Mounting: THT
Resistance: 10MΩ
Leads: axial
Tolerance: ±5%
Type of resistor: metal glaze
Power: 0.5W
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Max. operating voltage: 3.5kV DC
Category: THT Resistors
Description: Resistor: metal glaze; THT; 10MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Mounting: THT
Resistance: 10MΩ
Leads: axial
Tolerance: ±5%
Type of resistor: metal glaze
Power: 0.5W
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Max. operating voltage: 3.5kV DC
auf Bestellung 6650 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| 630+ | 0.11 EUR |
| 920+ | 0.078 EUR |
| 970+ | 0.074 EUR |
| SI1016X-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1026X-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1029X-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1034CX-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1539CDL-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 700/-500mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 700/-500mA
On-state resistance: 1.7Ω/525mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.34W
Polarisation: unipolar
Gate charge: 3/1.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70; SOT363
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 700/-500mA
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 700/-500mA
On-state resistance: 1.7Ω/525mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.34W
Polarisation: unipolar
Gate charge: 3/1.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC70; SOT363
Produkt ist nicht verfügbar
| SI1553CDL-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 700/-500mA
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 700/-500mA
Power dissipation: 0.34W
Case: SC70; SOT363
Gate-source voltage: ±12V
On-state resistance: 1.35/1.13Ω
Mounting: SMD
Gate charge: 3/1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 700/-500mA
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 700/-500mA
Power dissipation: 0.34W
Case: SC70; SOT363
Gate-source voltage: ±12V
On-state resistance: 1.35/1.13Ω
Mounting: SMD
Gate charge: 3/1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI1902CDL-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.27W
Case: SC70
Gate-source voltage: ±12V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 182+ | 0.39 EUR |
| 309+ | 0.23 EUR |
| 434+ | 0.17 EUR |
| 459+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| SI1902DL-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Gate charge: 0.8nC
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Drain current: 0.66A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Type of transistor: N-MOSFET x2
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.27W
On-state resistance: 630µΩ
Polarisation: unipolar
Technology: TrenchFET®
Gate charge: 0.8nC
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
Drain current: 0.66A
Produkt ist nicht verfügbar
| SI3590DV-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Pulsed drain current: 8A
Power dissipation: 1.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 300/120mΩ
Mounting: SMD
Gate charge: 6/4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Pulsed drain current: 8A
Power dissipation: 1.05W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 300/120mΩ
Mounting: SMD
Gate charge: 6/4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4288DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4615 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.46 EUR |
| 64+ | 1.13 EUR |
| 67+ | 1.07 EUR |
| SI5504BDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
On-state resistance: 235/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
On-state resistance: 235/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
| SI5504BDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
On-state resistance: 235/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4/-3.7A
Drain-source voltage: 30/-30V
Drain current: 4/-3.7A
On-state resistance: 235/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 3.1/3.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
| SI5513CDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Produkt ist nicht verfügbar
| SI5513CDC-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 5.6/4.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -3.7/4A
Kind of channel: enhanced
Drain-source voltage: -20/20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 255/85mΩ
Pulsed drain current: -8...10A
Produkt ist nicht verfügbar
| SI5515CDC-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 3.1W
Gate charge: 11/11.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 4/-4A
On-state resistance: 156/50mΩ
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar