![IRFBE30LPBF IRFBE30LPBF](https://www.mouser.com/images/mouserelectronics/lrg/TO_262_3_DSL.jpg)
auf Bestellung 18478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.49 EUR |
10+ | 3.1 EUR |
100+ | 2.64 EUR |
250+ | 2.55 EUR |
500+ | 2.32 EUR |
1000+ | 2.04 EUR |
2000+ | 1.97 EUR |
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Technische Details IRFBE30LPBF Vishay Semiconductors
Description: MOSFET N-CH 800V 4.1A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBE30LPBF nach Preis ab 2.52 EUR bis 4.51 EUR
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IRFBE30LPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30LPBF | Hersteller : Vishay |
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IRFBE30LPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFBE30LPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFBE30LPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFBE30LPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |