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SI5513CDC-T1-E3 Vishay Siliconix
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Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
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Technische Details SI5513CDC-T1-E3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A, Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Weitere Produktangebote SI5513CDC-T1-E3 nach Preis ab 0.37 EUR bis 0.98 EUR
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SI5513CDC-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5513CDC-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 6270 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5513CDC-T1-E3 |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5513CDC-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI5513CDC-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI5513CDC-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -3.7/4A Mounting: SMD Power dissipation: 3.1W Gate charge: 5.6/4.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -3.7/4A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 255/85mΩ Pulsed drain current: -8...10A |
Produkt ist nicht verfügbar |