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IRFBE20PBF-BE3 IRFBE20PBF-BE3 Vishay Siliconix 91117.pdf Description: MOSFET N-CH 800V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
IRF9520PBF-BE3 IRF9520PBF-BE3 Vishay Siliconix 91074.pdf Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
50+ 1.63 EUR
100+ 1.29 EUR
500+ 1.1 EUR
Mindestbestellmenge: 9
SIZ270DT-T1-GE3 SIZ270DT-T1-GE3 Vishay Siliconix siz270dt.pdf Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.91 EUR
6000+ 0.87 EUR
Mindestbestellmenge: 3000
SIZ270DT-T1-GE3 SIZ270DT-T1-GE3 Vishay Siliconix siz270dt.pdf Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 11593 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
IRFL210TRPBF-BE3 IRFL210TRPBF-BE3 Vishay Siliconix sihfl210.pdf Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFL210TRPBF-BE3 IRFL210TRPBF-BE3 Vishay Siliconix sihfl210.pdf Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
IRFR024TRPBF-BE3 IRFR024TRPBF-BE3 Vishay Siliconix sihfr024.pdf Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.84 EUR
Mindestbestellmenge: 2000
IRFR024TRPBF-BE3 IRFR024TRPBF-BE3 Vishay Siliconix sihfr024.pdf Description: MOSFET N-CH 60V 14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
11+ 1.66 EUR
100+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 9
IRFBC40PBF-BE3 IRFBC40PBF-BE3 Vishay Siliconix 91115.pdf Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
50+ 1.92 EUR
100+ 1.58 EUR
500+ 1.43 EUR
Mindestbestellmenge: 8
IRFBC40APBF-BE3 IRFBC40APBF-BE3 Vishay Siliconix 91112.pdf Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.89 EUR
50+ 3.12 EUR
100+ 2.57 EUR
Mindestbestellmenge: 5
IRFBC40LCPBF-BE3 IRFBC40LCPBF-BE3 Vishay Siliconix 91114.pdf Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.82 EUR
50+ 3.83 EUR
100+ 3.28 EUR
500+ 3.21 EUR
Mindestbestellmenge: 4
IRFBE30PBF-BE3 IRFBE30PBF-BE3 Vishay Siliconix 91118.pdf Description: MOSFET N-CH 800V 4.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
50+ 2 EUR
100+ 1.65 EUR
500+ 1.49 EUR
Mindestbestellmenge: 8
SISS32ADN-T1-GE3 SISS32ADN-T1-GE3 Vishay Siliconix siss32adn.pdf Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.03 EUR
Mindestbestellmenge: 3000
SISS32ADN-T1-GE3 SISS32ADN-T1-GE3 Vishay Siliconix siss32adn.pdf Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
auf Bestellung 14476 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 8
IRF620PBF-BE3 IRF620PBF-BE3 Vishay Siliconix irf620.pdf Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
50+ 1.04 EUR
100+ 0.82 EUR
500+ 0.7 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 14
SQ1431EH-T1_GE3 SQ1431EH-T1_GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 25 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
6000+ 0.3 EUR
9000+ 0.28 EUR
Mindestbestellmenge: 3000
SQ1431EH-T1_GE3 SQ1431EH-T1_GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 25 V
auf Bestellung 23962 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 19
SIR622DP-T1-RE3 SIR622DP-T1-RE3 Vishay Siliconix sir622dp.pdf Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Produkt ist nicht verfügbar
SIR622DP-T1-RE3 SIR622DP-T1-RE3 Vishay Siliconix sir622dp.pdf Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
auf Bestellung 4284 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
10+ 2.01 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 8
SQ9945BEY-T1_BE3 SQ9945BEY-T1_BE3 Vishay Siliconix sq9945bey.pdf Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.72 EUR
Mindestbestellmenge: 2500
SQ9945BEY-T1_BE3 SQ9945BEY-T1_BE3 Vishay Siliconix sq9945bey.pdf Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.74 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 11
IRL520PBF-BE3 IRL520PBF-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1235 Stücke:
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DG9233EDY-T1-GE3 DG9233EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NOX2 25OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG9233EDY-T1-GE3 DG9233EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NOX2 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
auf Bestellung 2106 Stücke:
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25+ 3.07 EUR
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1000+ 1.78 EUR
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DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH DUAL SPST 8MSOP
Produkt ist nicht verfügbar
DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH DUAL SPST 8MSOP
auf Bestellung 799 Stücke:
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DG9233EDS-T1-GE3 Vishay Siliconix Description: IC SWITCH DUAL SPST SOT23-8
Produkt ist nicht verfügbar
SIB457EDK-T1-GE3 SIB457EDK-T1-GE3 Vishay Siliconix sib457ed.pdf Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Produkt ist nicht verfügbar
SIB457EDK-T1-GE3 SIB457EDK-T1-GE3 Vishay Siliconix sib457ed.pdf Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
auf Bestellung 4492 Stücke:
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SIHP12N60E-BE3 SIHP12N60E-BE3 Vishay Siliconix sihp12n6.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 346 Stücke:
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SIJ462ADP-T1-GE3 SIJ462ADP-T1-GE3 Vishay Siliconix sij462adp.pdf Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
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SIJ462ADP-T1-GE3 SIJ462ADP-T1-GE3 Vishay Siliconix sij462adp.pdf Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
auf Bestellung 6050 Stücke:
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SIJ128LDP-T1-GE3 SIJ128LDP-T1-GE3 Vishay Siliconix sij128ldp.pdf Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
auf Bestellung 3000 Stücke:
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SIJ128LDP-T1-GE3 SIJ128LDP-T1-GE3 Vishay Siliconix sij128ldp.pdf Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
auf Bestellung 6050 Stücke:
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SIR104LDP-T1-RE3 SIR104LDP-T1-RE3 Vishay Siliconix sir104ldp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 9000 Stücke:
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Mindestbestellmenge: 3000
SIR104LDP-T1-RE3 SIR104LDP-T1-RE3 Vishay Siliconix sir104ldp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 12551 Stücke:
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SIR870BDP-T1-RE3 SIR870BDP-T1-RE3 Vishay Siliconix sir870bdp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 8166 Stücke:
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6+3.48 EUR
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SIDR104ADP-T1-RE3 Vishay Siliconix sidr104adp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.83 EUR
Mindestbestellmenge: 3000
SIDR104ADP-T1-RE3 Vishay Siliconix sidr104adp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 5970 Stücke:
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5+4.05 EUR
10+ 3.37 EUR
100+ 2.68 EUR
500+ 2.27 EUR
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Mindestbestellmenge: 5
SQJ264EP-T1_GE3 SQJ264EP-T1_GE3 Vishay Siliconix sqj264ep.pdf Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Produkt ist nicht verfügbar
SQJ264EP-T1_GE3 SQJ264EP-T1_GE3 Vishay Siliconix sqj264ep.pdf Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
auf Bestellung 2886 Stücke:
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SQJA81EP-T1_GE3 SQJA81EP-T1_GE3 Vishay Siliconix sqja81ep.pdf Description: MOSFET P-CH 80V 46A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+1.58 EUR
6000+ 1.52 EUR
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SQJA81EP-T1_GE3 SQJA81EP-T1_GE3 Vishay Siliconix sqja81ep.pdf Description: MOSFET P-CH 80V 46A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6077 Stücke:
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IRF9Z14PBF-BE3 IRF9Z14PBF-BE3 Vishay Siliconix 91088.pdf Description: MOSFET P-CH 60V 6.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1431 Stücke:
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9+2.02 EUR
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500+ 1.08 EUR
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IRL620PBF-BE3 IRL620PBF-BE3 Vishay Siliconix Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 980 Stücke:
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7+2.78 EUR
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500+ 1.55 EUR
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SUD23N06-31L-T4BE3 SUD23N06-31L-T4BE3 Vishay Siliconix sud23n06.pdf Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD23N06-31L-T4BE3 SUD23N06-31L-T4BE3 Vishay Siliconix sud23n06.pdf Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SIC438BEVB-B SIC438BEVB-B Vishay Siliconix sic437.pdf Description: SIC438B EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC438
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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SIC438AEVB-B SIC438AEVB-B Vishay Siliconix sic437.pdf Description: SIC438A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC438
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.6 EUR
SIR180DP-T1-RE3 SIR180DP-T1-RE3 Vishay Siliconix sir180dp.pdf Description: MOSFET N-CH 60V 32.4A/60A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.27 EUR
Mindestbestellmenge: 3000
SIR180DP-T1-RE3 SIR180DP-T1-RE3 Vishay Siliconix sir180dp.pdf Description: MOSFET N-CH 60V 32.4A/60A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
auf Bestellung 5379 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+ 2.33 EUR
100+ 1.86 EUR
500+ 1.57 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 7
IRFB9N65APBF-BE3 IRFB9N65APBF-BE3 Vishay Siliconix 91104.pdf Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
50+ 2.5 EUR
100+ 2.15 EUR
500+ 2.1 EUR
Mindestbestellmenge: 6
SiSS98DN-T1-GE3 SiSS98DN-T1-GE3 Vishay Siliconix siss98dn.pdf Description: MOSFET N-CH 200V 14.1A PPAK
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SiSS98DN-T1-GE3 SiSS98DN-T1-GE3 Vishay Siliconix siss98dn.pdf Description: MOSFET N-CH 200V 14.1A PPAK
auf Bestellung 8712 Stücke:
Lieferzeit 10-14 Tag (e)
SI3458BDV-T1-BE3 SI3458BDV-T1-BE3 Vishay Siliconix si3458bdv.pdf Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Produkt ist nicht verfügbar
SI3458BDV-T1-BE3 SI3458BDV-T1-BE3 Vishay Siliconix si3458bdv.pdf Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
15+ 1.23 EUR
100+ 0.85 EUR
500+ 0.71 EUR
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Mindestbestellmenge: 13
IRFZ40PBF-BE3 IRFZ40PBF-BE3 Vishay Siliconix irfz40.pdf Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
50+ 1.95 EUR
100+ 1.6 EUR
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IRFR014TRPBF-BE3 IRFR014TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
IRFR014TRPBF-BE3 IRFR014TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
12+ 1.57 EUR
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Mindestbestellmenge: 10
IRFR014TRLPBF-BE3 IRFR014TRLPBF-BE3 Vishay Siliconix sihfr014.pdf Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
IRFBE20PBF-BE3 91117.pdf
IRFBE20PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
IRF9520PBF-BE3 91074.pdf
IRF9520PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
50+ 1.63 EUR
100+ 1.29 EUR
500+ 1.1 EUR
Mindestbestellmenge: 9
SIZ270DT-T1-GE3 siz270dt.pdf
SIZ270DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.91 EUR
6000+ 0.87 EUR
Mindestbestellmenge: 3000
SIZ270DT-T1-GE3 siz270dt.pdf
SIZ270DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 11593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.2 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
IRFL210TRPBF-BE3 sihfl210.pdf
IRFL210TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFL210TRPBF-BE3 sihfl210.pdf
IRFL210TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
IRFR024TRPBF-BE3 sihfr024.pdf
IRFR024TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.84 EUR
Mindestbestellmenge: 2000
IRFR024TRPBF-BE3 sihfr024.pdf
IRFR024TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
11+ 1.66 EUR
100+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 9
IRFBC40PBF-BE3 91115.pdf
IRFBC40PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.39 EUR
50+ 1.92 EUR
100+ 1.58 EUR
500+ 1.43 EUR
Mindestbestellmenge: 8
IRFBC40APBF-BE3 91112.pdf
IRFBC40APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.89 EUR
50+ 3.12 EUR
100+ 2.57 EUR
Mindestbestellmenge: 5
IRFBC40LCPBF-BE3 91114.pdf
IRFBC40LCPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
50+ 3.83 EUR
100+ 3.28 EUR
500+ 3.21 EUR
Mindestbestellmenge: 4
IRFBE30PBF-BE3 91118.pdf
IRFBE30PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
50+ 2 EUR
100+ 1.65 EUR
500+ 1.49 EUR
Mindestbestellmenge: 8
SISS32ADN-T1-GE3 siss32adn.pdf
SISS32ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.03 EUR
Mindestbestellmenge: 3000
SISS32ADN-T1-GE3 siss32adn.pdf
SISS32ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
auf Bestellung 14476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 8
IRF620PBF-BE3 irf620.pdf
IRF620PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
50+ 1.04 EUR
100+ 0.82 EUR
500+ 0.7 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 14
SQ1431EH-T1_GE3 sq1431eh.pdf
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 25 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
6000+ 0.3 EUR
9000+ 0.28 EUR
Mindestbestellmenge: 3000
SQ1431EH-T1_GE3 sq1431eh.pdf
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 25 V
auf Bestellung 23962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 19
SIR622DP-T1-RE3 sir622dp.pdf
SIR622DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Produkt ist nicht verfügbar
SIR622DP-T1-RE3 sir622dp.pdf
SIR622DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
auf Bestellung 4284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.01 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 8
SQ9945BEY-T1_BE3 sq9945bey.pdf
SQ9945BEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.72 EUR
Mindestbestellmenge: 2500
SQ9945BEY-T1_BE3 sq9945bey.pdf
SQ9945BEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.74 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 11
IRL520PBF-BE3
IRL520PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
50+ 1.29 EUR
100+ 1.02 EUR
500+ 0.87 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 11
DG9233EDY-T1-GE3 dg9232e.pdf
DG9233EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 25OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG9233EDY-T1-GE3 dg9232e.pdf
DG9233EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
auf Bestellung 2106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.63 EUR
10+ 3.25 EUR
25+ 3.07 EUR
100+ 2.61 EUR
250+ 2.45 EUR
500+ 2.15 EUR
1000+ 1.78 EUR
Mindestbestellmenge: 5
DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Produkt ist nicht verfügbar
DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
DG9233EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
Produkt ist nicht verfügbar
SIB457EDK-T1-GE3 sib457ed.pdf
SIB457EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Produkt ist nicht verfügbar
SIB457EDK-T1-GE3 sib457ed.pdf
SIB457EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
auf Bestellung 4492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
SIHP12N60E-BE3 sihp12n6.pdf
SIHP12N60E-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.26 EUR
50+ 3.42 EUR
100+ 2.81 EUR
Mindestbestellmenge: 5
SIJ462ADP-T1-GE3 sij462adp.pdf
SIJ462ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SIJ462ADP-T1-GE3 sij462adp.pdf
SIJ462ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
auf Bestellung 6050 Stücke:
Lieferzeit 10-14 Tag (e)
SIJ128LDP-T1-GE3 sij128ldp.pdf
SIJ128LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SIJ128LDP-T1-GE3 sij128ldp.pdf
SIJ128LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
auf Bestellung 6050 Stücke:
Lieferzeit 10-14 Tag (e)
SIR104LDP-T1-RE3 sir104ldp.pdf
SIR104LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.13 EUR
6000+ 1.07 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
SIR104LDP-T1-RE3 sir104ldp.pdf
SIR104LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 12551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.73 EUR
10+ 2.22 EUR
100+ 1.73 EUR
500+ 1.47 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 7
SIR870BDP-T1-RE3 sir870bdp.pdf
SIR870BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 8166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.48 EUR
10+ 2.88 EUR
100+ 2.3 EUR
500+ 1.94 EUR
1000+ 1.65 EUR
Mindestbestellmenge: 6
SIDR104ADP-T1-RE3 sidr104adp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.83 EUR
Mindestbestellmenge: 3000
SIDR104ADP-T1-RE3 sidr104adp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.05 EUR
10+ 3.37 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.93 EUR
Mindestbestellmenge: 5
SQJ264EP-T1_GE3 sqj264ep.pdf
SQJ264EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Produkt ist nicht verfügbar
SQJ264EP-T1_GE3 sqj264ep.pdf
SQJ264EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
auf Bestellung 2886 Stücke:
Lieferzeit 10-14 Tag (e)
SQJA81EP-T1_GE3 sqja81ep.pdf
SQJA81EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 46A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.58 EUR
6000+ 1.52 EUR
Mindestbestellmenge: 3000
SQJA81EP-T1_GE3 sqja81ep.pdf
SQJA81EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 46A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.48 EUR
10+ 2.91 EUR
100+ 2.31 EUR
500+ 1.96 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 6
IRF9Z14PBF-BE3 91088.pdf
IRF9Z14PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.02 EUR
50+ 1.61 EUR
100+ 1.28 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 9
IRL620PBF-BE3
IRL620PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.78 EUR
50+ 2.23 EUR
100+ 1.84 EUR
500+ 1.55 EUR
Mindestbestellmenge: 7
SUD23N06-31L-T4BE3 sud23n06.pdf
SUD23N06-31L-T4BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD23N06-31L-T4BE3 sud23n06.pdf
SUD23N06-31L-T4BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SIC438BEVB-B sic437.pdf
SIC438BEVB-B
Hersteller: Vishay Siliconix
Description: SIC438B EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC438
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.6 EUR
SIC438AEVB-B sic437.pdf
SIC438AEVB-B
Hersteller: Vishay Siliconix
Description: SIC438A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC438
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.6 EUR
SIR180DP-T1-RE3 sir180dp.pdf
SIR180DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32.4A/60A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.27 EUR
Mindestbestellmenge: 3000
SIR180DP-T1-RE3 sir180dp.pdf
SIR180DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32.4A/60A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
auf Bestellung 5379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
10+ 2.33 EUR
100+ 1.86 EUR
500+ 1.57 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 7
IRFB9N65APBF-BE3 91104.pdf
IRFB9N65APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.15 EUR
50+ 2.5 EUR
100+ 2.15 EUR
500+ 2.1 EUR
Mindestbestellmenge: 6
SiSS98DN-T1-GE3 siss98dn.pdf
SiSS98DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.1A PPAK
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SiSS98DN-T1-GE3 siss98dn.pdf
SiSS98DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.1A PPAK
auf Bestellung 8712 Stücke:
Lieferzeit 10-14 Tag (e)
SI3458BDV-T1-BE3 si3458bdv.pdf
SI3458BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Produkt ist nicht verfügbar
SI3458BDV-T1-BE3 si3458bdv.pdf
SI3458BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.23 EUR
100+ 0.85 EUR
500+ 0.71 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
IRFZ40PBF-BE3 irfz40.pdf
IRFZ40PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
50+ 1.95 EUR
100+ 1.6 EUR
500+ 1.45 EUR
Mindestbestellmenge: 8
IRFR014TRPBF-BE3
IRFR014TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
IRFR014TRPBF-BE3
IRFR014TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
12+ 1.57 EUR
100+ 1.22 EUR
Mindestbestellmenge: 10
IRFR014TRLPBF-BE3 sihfr014.pdf
IRFR014TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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