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SQ9945BEY-T1_BE3

SQ9945BEY-T1_BE3 Vishay Siliconix

sq9945bey.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.72 EUR
Mindestbestellmenge: 2500
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Technische Details SQ9945BEY-T1_BE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 5.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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SQ9945BEY-T1_BE3 SQ9945BEY-T1_BE3 Hersteller : Vishay / Siliconix sq9945bey.pdf MOSFETs DUAL N-CH 60V (D-S)
auf Bestellung 53884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.74 EUR
10+ 1.42 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
2500+ 0.72 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
SQ9945BEY-T1_BE3 SQ9945BEY-T1_BE3 Hersteller : Vishay Siliconix sq9945bey.pdf Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.74 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 11
SQ9945BEY-T1_BE3 Hersteller : Vishay sq9945bey.pdf N-Channel MOSFET
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