auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.8 EUR |
| 250+ | 2.6 EUR |
| 500+ | 2.36 EUR |
| 1000+ | 1.92 EUR |
| 2000+ | 1.85 EUR |
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Technische Details SIHP12N60E-BE3 Vishay
Description: MOSFET N-CH 600V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V.
Weitere Produktangebote SIHP12N60E-BE3 nach Preis ab 2.81 EUR bis 4.26 EUR
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SIHP12N60E-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 12A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V |
auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP12N60E-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 12A |
Produkt ist nicht verfügbar |
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| SIHP12N60E-BE3 | Hersteller : Vishay |
N Channel MOSFET |
Produkt ist nicht verfügbar |