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SIB457EDK-T1-GE3 Vishay Semiconductors
auf Bestellung 97390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.87 EUR |
10+ | 0.74 EUR |
100+ | 0.52 EUR |
500+ | 0.4 EUR |
1000+ | 0.33 EUR |
3000+ | 0.29 EUR |
9000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIB457EDK-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 9A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V.
Weitere Produktangebote SIB457EDK-T1-GE3 nach Preis ab 0.33 EUR bis 0.88 EUR
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SIB457EDK-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V |
auf Bestellung 4492 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB457EDK-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIB457EDK-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.8A; Idm: -25A; 8.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.8A Pulsed drain current: -25A Power dissipation: 8.4W Case: PowerPAK® SC75 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIB457EDK-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V |
Produkt ist nicht verfügbar |
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SIB457EDK-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.8A; Idm: -25A; 8.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.8A Pulsed drain current: -25A Power dissipation: 8.4W Case: PowerPAK® SC75 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |