IRL520PBF-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.62 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.87 EUR |
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Technische Details IRL520PBF-BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRL520PBF-BE3 nach Preis ab 0.87 EUR bis 2.2 EUR
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IRL520PBF-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TO220 100V 9.2A N-CH MOSFET |
auf Bestellung 1443 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL520PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 9.2A |
Produkt ist nicht verfügbar |