| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BC638TA | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC638APZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 72mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC638P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 72mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3075 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 250...800 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZG | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Number of channels: 1 Output current: 0.1A Mounting: THT Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Operating temperature: 0...125°C Case: TO92 Type of integrated circuit: voltage regulator Input voltage: 3...40V Kind of package: bulk |
auf Bestellung 1605 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZRAG | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Manufacturer series: LM317L Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V |
Produkt ist nicht verfügbar |
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MUR1640CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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FSB560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W Kind of package: reel; tape Collector current: 2A Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Frequency: 75MHz Current gain: 40...550 |
Produkt ist nicht verfügbar |
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| NCP551SN33T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3.3V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...12V Manufacturer series: NCP551 |
Produkt ist nicht verfügbar |
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QSD2030 | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Mounting: THT LED diameter: 5mm Wavelength: 400...1100nm LED lens: transparent Viewing angle: 40° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Operating voltage: 1.3V |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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QSD2030F | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Mounting: THT LED diameter: 5mm Wavelength: 700...1100nm LED lens: black Viewing angle: 20° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Operating voltage: 1.3V |
auf Bestellung 1594 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65CLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2025 Stücke: Lieferzeit 14-21 Tag (e) |
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LM258DR2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -25...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FQA140N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NCP1075STAT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 59...71kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V |
Produkt ist nicht verfügbar |
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| NCP1075STBT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V |
Produkt ist nicht verfügbar |
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| NCP1075STCT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 117...143kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V |
Produkt ist nicht verfügbar |
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6N139M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 500-1600%@1.6mA Case: DIP8 Turn-on time: 0.2µs Turn-off time: 1.3µs Manufacturer series: 6N139M |
auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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6N139SDM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 500-1600%@1.6mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
Produkt ist nicht verfügbar |
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| FPF1203LUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape Operating temperature: -40...85°C On-state resistance: 0.185Ω Output current: 2.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: low Integrated circuit features: ESD-protected; output discharge Kind of package: reel; tape Mounting: SMD Case: WLCSP4 Supply voltage: 1.2...5.5V DC |
Produkt ist nicht verfügbar |
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| FPF1204UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape Operating temperature: -40...85°C On-state resistance: 0.185Ω Output current: 2.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: ESD-protected; output discharge Kind of package: reel; tape Mounting: SMD Case: WLCSP4 Supply voltage: 1.2...5.5V DC |
Produkt ist nicht verfügbar |
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FQP27P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -27A Case: TO220AB Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1N5335BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA |
auf Bestellung 1523 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5340BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6V; bulk; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 6V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 1166 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5341BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 676 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5341BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5343BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 7.5V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
Produkt ist nicht verfügbar |
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1N5343BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 7.5V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 1628 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5344BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Max. load current: 20A Max. forward voltage: 0.8V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Max. load current: 20A Max. forward voltage: 1V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TIP32AG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
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TIP32BG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
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TIP32CG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Collector-emitter voltage: 100V Current gain: 10...50 Collector current: 3A Type of transistor: PNP Power dissipation: 40W Polarisation: bipolar Frequency: 3MHz |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP32G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
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| FMB2907A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.7W Case: TSOT23 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
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MC7805BDTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
Produkt ist nicht verfügbar |
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MC7805BDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
Produkt ist nicht verfügbar |
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MC74HC161ADG | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube Type of integrated circuit: digital Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable Number of channels: 1 Number of inputs: 9 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -55...125°C |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC161ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable Number of channels: 1 Number of inputs: 9 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| MC74HC161ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable Number of channels: 1 Number of inputs: 9 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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TIP120G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78L05ACHT1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SOT89; SMD; MC78L00A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: SOT89 Mounting: SMD Manufacturer series: MC78L00A Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2116LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
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SMMUN2116LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
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FDS8958A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7/-5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1488 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14023BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MJE350G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225 Mounting: THT Collector-emitter voltage: 300V Current gain: 30...240 Collector current: 0.5A Type of transistor: PNP Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Case: TO225 |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB4N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FQI4N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQP4N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB5N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.42A Power dissipation: 158W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 777 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5N90 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Interface: I2C Operating voltage: 1.7...5.5V Mounting: SMD Kind of memory: EEPROM Memory: 2kb EEPROM Type of integrated circuit: EEPROM memory Case: SOT23-5 Memory organisation: 256x8bit |
Produkt ist nicht verfügbar |
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| ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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FQD4N25TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 250V Drain current: 1.9A On-state resistance: 1.75Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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FQT4N25TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3.3A Case: SOT223 Drain-source voltage: 250V Drain current: 0.66A On-state resistance: 1.75Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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FDB44N25TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Polarisation: unipolar Gate charge: 61nC Technology: UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: D2PAK Drain-source voltage: 250V Drain current: 26.4A On-state resistance: 69mΩ Type of transistor: N-MOSFET Power dissipation: 307W Kind of package: reel; tape |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC638TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 490+ | 0.15 EUR |
| 530+ | 0.13 EUR |
| FDC638APZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC638P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3075 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.69 EUR |
| 124+ | 0.58 EUR |
| 218+ | 0.33 EUR |
| 231+ | 0.31 EUR |
| MMBT2484LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 250...800
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| LM317LZG |
|
Hersteller: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Number of channels: 1
Output current: 0.1A
Mounting: THT
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Operating temperature: 0...125°C
Case: TO92
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of package: bulk
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Number of channels: 1
Output current: 0.1A
Mounting: THT
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Operating temperature: 0...125°C
Case: TO92
Type of integrated circuit: voltage regulator
Input voltage: 3...40V
Kind of package: bulk
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 211+ | 0.34 EUR |
| 305+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| 1000+ | 0.21 EUR |
| LM317LZRAG |
|
Hersteller: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Produkt ist nicht verfügbar
| MUR1640CTG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.4 EUR |
| FSB560A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Kind of package: reel; tape
Collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Frequency: 75MHz
Current gain: 40...550
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Kind of package: reel; tape
Collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Frequency: 75MHz
Current gain: 40...550
Produkt ist nicht verfügbar
| NCP551SN33T1G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Manufacturer series: NCP551
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Manufacturer series: NCP551
Produkt ist nicht verfügbar
| QSD2030 |
|
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
LED diameter: 5mm
Wavelength: 400...1100nm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 165+ | 0.43 EUR |
| 200+ | 0.36 EUR |
| 208+ | 0.34 EUR |
| 226+ | 0.32 EUR |
| QSD2030F |
|
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
auf Bestellung 1594 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 1.16 EUR |
| 108+ | 0.67 EUR |
| 162+ | 0.44 EUR |
| 210+ | 0.34 EUR |
| 222+ | 0.32 EUR |
| BCW65CLT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1300+ | 0.055 EUR |
| 1450+ | 0.05 EUR |
| 1775+ | 0.04 EUR |
| 1900+ | 0.038 EUR |
| LM258DR2G | |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FQA140N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NCP1075STAT3G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Produkt ist nicht verfügbar
| NCP1075STBT3G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Produkt ist nicht verfügbar
| NCP1075STCT3G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V
Produkt ist nicht verfügbar
| 6N139M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 73+ | 0.99 EUR |
| 98+ | 0.74 EUR |
| 103+ | 0.69 EUR |
| 500+ | 0.67 EUR |
| 6N139SDM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Produkt ist nicht verfügbar
| FPF1203LUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Operating temperature: -40...85°C
On-state resistance: 0.185Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Operating temperature: -40...85°C
On-state resistance: 0.185Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Produkt ist nicht verfügbar
| FPF1204UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Operating temperature: -40...85°C
On-state resistance: 0.185Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Operating temperature: -40...85°C
On-state resistance: 0.185Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Produkt ist nicht verfügbar
| FQP27P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1N5335BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
auf Bestellung 1523 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 131+ | 0.55 EUR |
| 217+ | 0.33 EUR |
| 282+ | 0.25 EUR |
| 298+ | 0.24 EUR |
| 1N5337BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 17.88 EUR |
| 1N5337BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 224+ | 0.32 EUR |
| 291+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| 1N5340BG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1166 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 209+ | 0.34 EUR |
| 284+ | 0.25 EUR |
| 301+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| 1N5341BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 103+ | 0.7 EUR |
| 181+ | 0.4 EUR |
| 239+ | 0.3 EUR |
| 253+ | 0.28 EUR |
| 1N5341BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 145+ | 0.5 EUR |
| 198+ | 0.36 EUR |
| 258+ | 0.28 EUR |
| 273+ | 0.26 EUR |
| 1N5343BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Produkt ist nicht verfügbar
| 1N5343BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 196+ | 0.37 EUR |
| 269+ | 0.27 EUR |
| 284+ | 0.25 EUR |
| 1N5344BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 181+ | 0.4 EUR |
| 200+ | 0.36 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| MBRB20200CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SBRB20200CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| TIP32AG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
| TIP32BG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
| TIP32CG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 10...50
Collector current: 3A
Type of transistor: PNP
Power dissipation: 40W
Polarisation: bipolar
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 10...50
Collector current: 3A
Type of transistor: PNP
Power dissipation: 40W
Polarisation: bipolar
Frequency: 3MHz
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 167+ | 0.43 EUR |
| TIP32G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
| FMB2907A |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| MC7805BDTG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Produkt ist nicht verfügbar
| MC7805BDTRKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Produkt ist nicht verfügbar
| MC74HC161ADG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| 118+ | 0.61 EUR |
| 143+ | 0.5 EUR |
| 155+ | 0.46 EUR |
| 169+ | 0.43 EUR |
| MC74HC161ADR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| MC74HC161ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| TIP120G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| MC78L05ACHT1G |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SOT89; SMD; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SOT89; SMD; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 175+ | 0.41 EUR |
| 319+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| MMUN2116LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Produkt ist nicht verfügbar
| SMMUN2116LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
| FDS8958A |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1488 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 110+ | 0.65 EUR |
| 126+ | 0.57 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| MC14023BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Produkt ist nicht verfügbar
| MJE350G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Case: TO225
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 117+ | 0.61 EUR |
| 133+ | 0.54 EUR |
| FQB4N80TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQI4N80TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQP4N80 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.98 EUR |
| FQB5N90TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.47 EUR |
| 24+ | 3.07 EUR |
| 31+ | 2.37 EUR |
| 32+ | 2.25 EUR |
| FQPF5N90 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CAT24C02TDI-GT3A |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Interface: I2C
Operating voltage: 1.7...5.5V
Mounting: SMD
Kind of memory: EEPROM
Memory: 2kb EEPROM
Type of integrated circuit: EEPROM memory
Case: SOT23-5
Memory organisation: 256x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Interface: I2C
Operating voltage: 1.7...5.5V
Mounting: SMD
Kind of memory: EEPROM
Memory: 2kb EEPROM
Type of integrated circuit: EEPROM memory
Case: SOT23-5
Memory organisation: 256x8bit
Produkt ist nicht verfügbar
| ISL9V3040D3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Produkt ist nicht verfügbar
| FQD4N25TM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| FQT4N25TF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3.3A
Case: SOT223
Drain-source voltage: 250V
Drain current: 0.66A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3.3A
Case: SOT223
Drain-source voltage: 250V
Drain current: 0.66A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| FDB44N25TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Polarisation: unipolar
Gate charge: 61nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 250V
Drain current: 26.4A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 307W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Polarisation: unipolar
Gate charge: 61nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 250V
Drain current: 26.4A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 307W
Kind of package: reel; tape
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.1 EUR |
| 33+ | 2.17 EUR |
| 35+ | 2.04 EUR |
| 250+ | 1.97 EUR |