| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MMBFJ201 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 Gate current: 50mA Type of transistor: N-JFET |
Produkt ist nicht verfügbar |
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DTC143EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
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NCP5106ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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| ADD5043-169-2-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; Comp: AX5043,AX8052F100 Type of accessories for development kits: expansion board Components: AX5043; AX8052F100 |
Produkt ist nicht verfügbar |
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| ADD5043-433-2-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; Comp: AX5043,AX8052F100 Type of accessories for development kits: expansion board Components: AX5043; AX8052F100 |
Produkt ist nicht verfügbar |
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| ADD5043-868-2-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; Comp: AX5043,AX8052F100 Components: AX5043; AX8052F100 Type of accessories for development kits: expansion board |
Produkt ist nicht verfügbar |
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| CAT24C04HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
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FSB649 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: NPN Collector-emitter voltage: 25V Polarisation: bipolar Frequency: 150MHz Power dissipation: 0.5W Current gain: 15...300 Collector current: 3A |
Produkt ist nicht verfügbar |
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NCP431ACLPRAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP431ACSNT1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
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FCPF11N60 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCPF11N60T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 33A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCP22N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Case: DPAK Drain-source voltage: -35V Drain current: -55A On-state resistance: 19mΩ Type of transistor: P-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTH81 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Mounting: SMD Case: SOT23 Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 50mA Type of transistor: PNP Power dissipation: 0.225W Kind of package: reel; tape Kind of transistor: RF Frequency: 600MHz |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC86M | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: HC |
Produkt ist nicht verfügbar |
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of package: tube Collector-emitter voltage: 200V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Case: TO247-3 |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Kind of package: tube Collector-emitter voltage: 250V Collector current: 15A Type of transistor: PNP Power dissipation: 150W Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Case: TO247-3 |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Kind of package: tube Collector-emitter voltage: 250V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |
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FDP22N50N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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| FMB3906 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: SuperSOT-6 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
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MBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4737ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 7.5V; DO41; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 7.5V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 2285 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
auf Bestellung 2471 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1271D100R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 85÷107kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -800...500mA Frequency: 85...107kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 9.1...20V |
Produkt ist nicht verfügbar |
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| NCP1271D65R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 55÷69kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -800...500mA Frequency: 55...69kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 9.1...20V |
Produkt ist nicht verfügbar |
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| FPF1320UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Active logical level: high Operating temperature: -40...85°C Integrated circuit features: ESD-protected |
Produkt ist nicht verfügbar |
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| NCP1090DBRG | ONSEMI |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE PD controller; TSSOP8; -40÷85°C; 57VDC; Number of ports: 1 Type of integrated circuit: PoE PD controller Case: TSSOP8 Mounting: SMD Operating temperature: -40...85°C Communictions protocol: Ethernet; IEEE 802.3af Supply voltage: 57V DC Number of ports: 1 |
Produkt ist nicht verfügbar |
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FSL206MRBN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1 Mounting: THT Case: DIP8 Power: 7W Operating temperature: -40...115°C Application: SMPS Operating voltage: 7...24.5V Number of channels: 1 Input voltage: 85...265V Duty cycle factor: 66...78% Kind of integrated circuit: AC/DC switcher; PWM controller Frequency: 67kHz On-state resistance: 19Ω Output voltage: 650V Output current: 0.6A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| FSL206MRLX | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1 Mounting: SMD Case: LSOP8 Power: 7W Operating temperature: -40...115°C Application: SMPS Operating voltage: 7...24.5V Number of channels: 1 Input voltage: 85...265V Duty cycle factor: 66...78% Kind of integrated circuit: AC/DC switcher; PWM controller Frequency: 67kHz On-state resistance: 19Ω Output voltage: 650V Output current: 0.6A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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FSL206MRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1 Mounting: THT Case: DIP8 Power: 7W Operating temperature: -40...115°C Application: SMPS Operating voltage: 7...24.5V Number of channels: 1 Input voltage: 85...265V Duty cycle factor: 66...78% Kind of integrated circuit: AC/DC switcher; PWM controller Frequency: 67kHz On-state resistance: 19Ω Output voltage: 650V Output current: 0.6A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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BZX85C10 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 10V; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C11 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 11V; bulk; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C11 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 11V; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 1551 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C13 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C15 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 15V; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 15910 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C16 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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MMBTA06LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 6050 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MMBTA06WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.45W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.45W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MM74HC32MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Family: HC |
Produkt ist nicht verfügbar |
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MM74HCT32MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Family: HCT |
Produkt ist nicht verfügbar |
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MM74HC32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Family: HC |
Produkt ist nicht verfügbar |
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| MM74HCT74MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS; TTL Manufacturer series: HCT Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT |
Produkt ist nicht verfügbar |
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MM74HCT32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Family: HCT |
Produkt ist nicht verfügbar |
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MM74HC86MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 9ns Family: HC |
Produkt ist nicht verfügbar |
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| MM74HC86MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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MM74HC132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 12ns Family: HC |
Produkt ist nicht verfügbar |
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MM74HC132MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 12ns Family: HC |
Produkt ist nicht verfügbar |
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BZX79C4V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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| NLAS323USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; reel,tape; 2uA Type of integrated circuit: analog switch Number of channels: 2 Technology: CMOS Mounting: SMD Case: US8 Supply voltage: 2...5.5V DC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 2µA Kind of output: SPST-NO x2 |
Produkt ist nicht verfügbar |
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MMBD1503A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Case: SOT23 Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 2A |
auf Bestellung 4215 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1503A-D87Z | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NJVMJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
| MMBFJ201 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Gate current: 50mA
Type of transistor: N-JFET
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Gate current: 50mA
Type of transistor: N-JFET
Produkt ist nicht verfügbar
| DTC143EET1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
| NCP5106ADR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| NCP5106BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| ADD5043-169-2-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5043; AX8052F100
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5043; AX8052F100
Produkt ist nicht verfügbar
| ADD5043-433-2-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5043; AX8052F100
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5043; AX8052F100
Produkt ist nicht verfügbar
| ADD5043-868-2-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Components: AX5043; AX8052F100
Type of accessories for development kits: expansion board
Category: Development kits - others
Description: Expansion board; Comp: AX5043,AX8052F100
Components: AX5043; AX8052F100
Type of accessories for development kits: expansion board
Produkt ist nicht verfügbar
| CAT24C04HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
| FQD2N90TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
| FQU2N90TU-AM002 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
| FQU2N90TU-WS |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
| FSB649 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Collector-emitter voltage: 25V
Polarisation: bipolar
Frequency: 150MHz
Power dissipation: 0.5W
Current gain: 15...300
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Collector-emitter voltage: 25V
Polarisation: bipolar
Frequency: 150MHz
Power dissipation: 0.5W
Current gain: 15...300
Collector current: 3A
Produkt ist nicht verfügbar
| NCP431ACLPRAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 92+ | 0.77 EUR |
| NCP431ACSNT1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| FCPF11N60 | |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.19 EUR |
| 32+ | 2.23 EUR |
| FCPF11N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCPF11N60T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCP22N60N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDD6637 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.9 EUR |
| 46+ | 1.56 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| MMBTH81 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 600MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 600MHz
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 355+ | 0.2 EUR |
| 534+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 900+ | 0.08 EUR |
| MM74HC86M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: HC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: HC
Produkt ist nicht verfügbar
| MJH11020G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 7.14 EUR |
| 12+ | 6.42 EUR |
| 15+ | 4.96 EUR |
| 16+ | 4.69 EUR |
| MJH11021G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.74 EUR |
| 12+ | 6.06 EUR |
| 15+ | 4.86 EUR |
| 16+ | 4.6 EUR |
| MJH11022G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of package: tube
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
| FDP22N50N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.42 EUR |
| 23+ | 3.2 EUR |
| 24+ | 3.03 EUR |
| FMB3906 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
| MBT3906DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1200+ | 0.06 EUR |
| 1325+ | 0.054 EUR |
| 1675+ | 0.043 EUR |
| 1750+ | 0.041 EUR |
| 1N4737ATR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 7.5V; DO41; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 7.5V; DO41; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.072 EUR |
| 1114+ | 0.064 EUR |
| 1344+ | 0.053 EUR |
| 1422+ | 0.05 EUR |
| MJD127T4G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 81+ | 0.89 EUR |
| 86+ | 0.84 EUR |
| 108+ | 0.66 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
| NCP1271D100R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V
Produkt ist nicht verfügbar
| NCP1271D65R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 55÷69kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 55...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 55÷69kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 55...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V
Produkt ist nicht verfügbar
| FPF1320UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Integrated circuit features: ESD-protected
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Integrated circuit features: ESD-protected
Produkt ist nicht verfügbar
| NCP1090DBRG |
|
Hersteller: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP8; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af
Supply voltage: 57V DC
Number of ports: 1
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP8; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af
Supply voltage: 57V DC
Number of ports: 1
Produkt ist nicht verfügbar
| FSL206MRBN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: THT
Case: DIP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: THT
Case: DIP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
| FSL206MRLX |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: SMD
Case: LSOP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: SMD
Case: LSOP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
| FSL206MRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: THT
Case: DIP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Mounting: THT
Case: DIP8
Power: 7W
Operating temperature: -40...115°C
Application: SMPS
Operating voltage: 7...24.5V
Number of channels: 1
Input voltage: 85...265V
Duty cycle factor: 66...78%
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 67kHz
On-state resistance: 19Ω
Output voltage: 650V
Output current: 0.6A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
| BZX85C10 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 540+ | 0.13 EUR |
| 1000+ | 0.072 EUR |
| 1130+ | 0.063 EUR |
| 1250+ | 0.058 EUR |
| 1320+ | 0.054 EUR |
| BZX85C11 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; bulk; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; bulk; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)| BZX85C11 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 590+ | 0.12 EUR |
| 970+ | 0.074 EUR |
| 1080+ | 0.067 EUR |
| 1400+ | 0.051 EUR |
| 1480+ | 0.048 EUR |
| BZX85C13 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 280+ | 0.26 EUR |
| BZX85C15 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 15910 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 1030+ | 0.07 EUR |
| 1140+ | 0.063 EUR |
| 1460+ | 0.049 EUR |
| 1540+ | 0.047 EUR |
| BZX85C16 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| MMBTA06LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 6050 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 667+ | 0.11 EUR |
| 1042+ | 0.069 EUR |
| 1286+ | 0.056 EUR |
| 1656+ | 0.043 EUR |
| 2326+ | 0.031 EUR |
| 2464+ | 0.029 EUR |
| MMBTA06LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MMBTA06WT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.45W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.45W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.45W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.45W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MM74HC32MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HC
Produkt ist nicht verfügbar
| MM74HCT32MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HCT
Produkt ist nicht verfügbar
| MM74HC32MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HC
Produkt ist nicht verfügbar
| MM74HCT74MTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Produkt ist nicht verfügbar
| MM74HCT32MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Family: HCT
Produkt ist nicht verfügbar
| MM74HC86MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 9ns
Family: HC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 9ns
Family: HC
Produkt ist nicht verfügbar
| MM74HC86MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| MM74HC132MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Produkt ist nicht verfügbar
| MM74HC132MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Produkt ist nicht verfügbar
| BZX79C4V7 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 840+ | 0.086 EUR |
| 1410+ | 0.051 EUR |
| 1750+ | 0.041 EUR |
| 1970+ | 0.036 EUR |
| 2080+ | 0.034 EUR |
| NLAS323USG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; reel,tape; 2uA
Type of integrated circuit: analog switch
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: US8
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 2µA
Kind of output: SPST-NO x2
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; CMOS; SMD; US8; 2÷5.5VDC; reel,tape; 2uA
Type of integrated circuit: analog switch
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: US8
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 2µA
Kind of output: SPST-NO x2
Produkt ist nicht verfügbar
| MMBD1503A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
auf Bestellung 4215 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 252+ | 0.28 EUR |
| 404+ | 0.18 EUR |
| 498+ | 0.14 EUR |
| 881+ | 0.081 EUR |
| 932+ | 0.077 EUR |
| 3000+ | 0.074 EUR |
| MMBD1503A-D87Z |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MJD31CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NJVMJD31CT4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar