| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BST51,115 | NEXPERIA |
 Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 1A; 1.3W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.3W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 879 Stücke: Lieferzeit 7-14 Tag (e) |
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BST52,115 | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SC62,SOT89 Mounting: SMD Frequency: 200MHz Collector-emitter voltage: 80V Collector current: 1A Type of transistor: NPN Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: Darlington Case: SC62; SOT89 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1357 Stücke: Lieferzeit 7-14 Tag (e) |
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BST60,115 | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.3W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BST62,115 | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.3W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.3W Case: SC62; SOT89 Current gain: 2k Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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BST82,215 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53619 Stücke: Lieferzeit 7-14 Tag (e) |
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BST82,235 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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BSV52,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 500MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2882 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK4D38-20PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Pulsed drain current: -72A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK6607-55C,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 420A Power dissipation: 158W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D120-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W Mounting: SMD Drain-source voltage: 40V Drain current: 3.6A On-state resistance: 233mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 7.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A Case: DFN6; SOT1220 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D120-60PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -32A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 256mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D125-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.3A Pulsed drain current: 30A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 271mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D210-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D22-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15.7A Pulsed drain current: 89A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D23-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 76A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D230-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D30-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.8A Pulsed drain current: 73A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D38-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D385-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 1078mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D43-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.9A Pulsed drain current: -56A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D43-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D56-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D72-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D77-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 42A Power dissipation: 18.8W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 167mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6D81-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 6.9A Pulsed drain current: 39A Power dissipation: 18.8W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 197mΩ Mounting: SMD Gate charge: 14.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6Y10-30PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -57A Pulsed drain current: -320A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK6Y14-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -46A Pulsed drain current: -257A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 306 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK6Y19-30PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -32A Pulsed drain current: -181A Power dissipation: 66W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6Y24-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -27A Pulsed drain current: -155A Power dissipation: 66W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6Y33-60PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -21A Pulsed drain current: -120A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK6Y61-60PX | NEXPERIA |
BUK6Y61-60PX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| BUK7208-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 75A Pulsed drain current: 420A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7212-55B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 59A Pulsed drain current: 335A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7214-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 49A Pulsed drain current: 276A Power dissipation: 158W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK72150-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK Polarisation: unipolar Case: DPAK Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Drain-source voltage: 55V Drain current: 7A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 36W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7219-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK Case: DPAK Drain-source voltage: 55V Drain current: 39A On-state resistance: 38mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 114W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7227-100B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Pulsed drain current: 196A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7230-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Pulsed drain current: 150A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7240-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 136A Power dissipation: 114W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7275-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15.4A Pulsed drain current: 87A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 187mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| BUK753R1-40E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 798A Power dissipation: 234W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7606-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 638A Case: D2PAK; SOT404 Drain-source voltage: 75V Drain current: 75A On-state resistance: 11.8mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7610-55AL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 490A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK7613-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 234A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28.2mΩ Mounting: SMD Gate charge: 22.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK761R6-40E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 1355A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 145nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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 |
BUK7628-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 166W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK762R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1036A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 158nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK762R6-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 958A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK7631-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 136A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 29.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK763R1-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 834A Power dissipation: 293W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 114nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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 |
BUK763R8-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 778A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK764R0-55B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 774A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK764R2-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 713A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Gate charge: 136nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| BUK764R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 620A Power dissipation: 234W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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|
|
BUK765R0-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK766R0-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W Mounting: SMD Case: D2PAK; SOT404 Application: automotive industry Kind of package: reel; tape Pulsed drain current: 473A Drain-source voltage: 60V Drain current: 75A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7675-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 14.3A Pulsed drain current: 81A Power dissipation: 62W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK768R1-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 78A Pulsed drain current: 439A Power dissipation: 263W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 21.9mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK768R1-40E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 59A Pulsed drain current: 335A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK768R3-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61.5A Pulsed drain current: 349A Power dissipation: 137W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 43.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| BST51,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 0.42 EUR |
| 190+ | 0.38 EUR |
| 238+ | 0.3 EUR |
| 252+ | 0.28 EUR |
| BST52,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SC62,SOT89
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SC62; SOT89
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SC62,SOT89
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SC62; SOT89
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1357 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 189+ | 0.38 EUR |
| 264+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| BST60,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BST62,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 180+ | 0.4 EUR |
| 205+ | 0.35 EUR |
| 230+ | 0.31 EUR |
| 244+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| BST82,215 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53619 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 195+ | 0.37 EUR |
| 248+ | 0.29 EUR |
| 296+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 486+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| BST82,235 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| BSV52,215 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2882 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 226+ | 0.32 EUR |
| 281+ | 0.25 EUR |
| 341+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 565+ | 0.13 EUR |
| 598+ | 0.12 EUR |
| BUK4D38-20PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6607-55C,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 420A
Power dissipation: 158W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 420A
Power dissipation: 158W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D120-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 3.6A
On-state resistance: 233mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 7.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 23A
Case: DFN6; SOT1220
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 3.6A
On-state resistance: 233mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 7.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 23A
Case: DFN6; SOT1220
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D120-60PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D125-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 271mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 271mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D210-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D22-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D23-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D230-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D30-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D38-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D385-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 1078mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 1078mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D43-40PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D43-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D56-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D72-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D77-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6D81-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6Y10-30PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6Y14-40PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 306 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| 58+ | 1.24 EUR |
| 75+ | 0.96 EUR |
| 80+ | 0.9 EUR |
| 500+ | 0.87 EUR |
| BUK6Y19-30PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32A
Pulsed drain current: -181A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32A
Pulsed drain current: -181A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6Y24-40PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK6Y33-60PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7208-40B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7212-55B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7214-75B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK72150-55A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7219-55A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7227-100B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7230-55A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7240-100A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK7275-100A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| BUK753R1-40E,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7606-75B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 638A
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 75A
On-state resistance: 11.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 638A
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 75A
On-state resistance: 11.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7610-55AL,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK7613-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK761R6-40E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK7628-100A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 166W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 166W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK762R4-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1036A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 158nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1036A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 158nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK762R6-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 958A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 958A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK7631-100E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 29.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 29.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK763R1-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 834A
Power dissipation: 293W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 114nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 834A
Power dissipation: 293W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 114nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK763R8-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 778A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 778A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK764R0-55B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 774A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 774A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK764R2-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 713A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 713A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| BUK764R4-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 234W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 234W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK765R0-100E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK766R0-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 473A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 473A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7675-55A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK768R1-100E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Pulsed drain current: 439A
Power dissipation: 263W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 21.9mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Pulsed drain current: 439A
Power dissipation: 263W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 21.9mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK768R1-40E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK768R3-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61.5A
Pulsed drain current: 349A
Power dissipation: 137W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61.5A
Pulsed drain current: 349A
Power dissipation: 137W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar