Technische Details BUK762R4-60E,118 NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W, Kind of package: reel; tape, On-state resistance: 5.2mΩ, Drain current: 120A, Drain-source voltage: 60V, Case: D2PAK; SOT404, Gate charge: 158nC, Mounting: SMD, Kind of channel: enhanced, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 1036A, Application: automotive industry, Power dissipation: 349W, Polarisation: unipolar, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote BUK762R4-60E,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BUK762R4-60E,118 | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W Kind of package: reel; tape On-state resistance: 5.2mΩ Drain current: 120A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 158nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 1036A Application: automotive industry Power dissipation: 349W Polarisation: unipolar Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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BUK762R4-60E,118 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK |
Produkt ist nicht verfügbar |
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BUK762R4-60E,118 | Hersteller : Nexperia |
MOSFET N-channel TrenchMOS intermed level FET |
Produkt ist nicht verfügbar |
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| BUK762R4-60E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W Kind of package: reel; tape On-state resistance: 5.2mΩ Drain current: 120A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 158nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 1036A Application: automotive industry Power dissipation: 349W Polarisation: unipolar |
Produkt ist nicht verfügbar |