Produkte > NEXPERIA > BUK6D22-30EX
BUK6D22-30EX

BUK6D22-30EX Nexperia


BUK6D22_30E-1588536.pdf Hersteller: Nexperia
MOSFET BUK6D22-30E/SOT1220/SOT1220
auf Bestellung 14599 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.51 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.25 EUR
3000+ 0.2 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 5
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK6D22-30EX Nexperia

Description: MOSFET N-CH 30V 7.2A/22A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V, Power Dissipation (Max): 2W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK6D22-30EX nach Preis ab 0.24 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BUK6D22-30EX BUK6D22-30EX Hersteller : Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.55 EUR
100+ 0.39 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 28
BUK6D22-30EX Hersteller : NEXPERIA buk6d22-30e.pdf 30 V, N-channel Trench MOSFET
Produkt ist nicht verfügbar
BUK6D22-30EX BUK6D22-30EX Hersteller : Nexperia buk6d22-30e.pdf 30 V, N-channel Trench MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
BUK6D22-30EX BUK6D22-30EX Hersteller : Nexperia buk6d22-30e.pdf 30 V, N-channel Trench MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
BUK6D22-30EX Hersteller : NEXPERIA BUK6D22-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D22-30EX BUK6D22-30EX Hersteller : Nexperia USA Inc. BUK6D22-30E.pdf Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK6D22-30EX Hersteller : NEXPERIA BUK6D22-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar