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BUK6D210-60EX Nexperia USA Inc.
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Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK6D210-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK6D210-60EX nach Preis ab 0.15 EUR bis 0.65 EUR
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BUK6D210-60EX | Hersteller : Nexperia |
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auf Bestellung 25753 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D210-60EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 7939 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D210-60EX | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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BUK6D210-60EX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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BUK6D210-60EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK6D210-60EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |