![BUK7613-60E,118 BUK7613-60E,118](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/1048/568-D2PAK%2CSOT404.jpg)
BUK7613-60E,118 Nexperia USA Inc.
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Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.37 EUR |
1600+ | 1.16 EUR |
2400+ | 1.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7613-60E,118 Nexperia USA Inc.
Description: NEXPERIA - BUK7613-60E,118 - Leistungs-MOSFET, n-Kanal, 60 V, 58 A, 0.00944 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 58A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 96W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00944ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote BUK7613-60E,118 nach Preis ab 1.09 EUR bis 2.45 EUR
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BUK7613-60E,118 | Hersteller : Nexperia |
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auf Bestellung 10498 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7613-60E,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3798 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7613-60E,118 | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 96W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00944ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 8424 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7613-60E,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Kind of package: reel; tape On-state resistance: 28.2mΩ Drain current: 41A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 22.9nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 234A Application: automotive industry Power dissipation: 96W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7613-60E,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Kind of package: reel; tape On-state resistance: 28.2mΩ Drain current: 41A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 22.9nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 234A Application: automotive industry Power dissipation: 96W Polarisation: unipolar |
Produkt ist nicht verfügbar |