| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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74HCT154DB,112 | NEXPERIA |
 Category: Decoders, multiplexers, switchesDescription: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder Technology: CMOS; TTL Mounting: SMD Case: SSOP24 Family: HCT Kind of package: tube |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT154PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder Technology: CMOS; TTL Mounting: SMD Case: TSSOP24 Family: HCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| PSMN3R3-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 760A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.1mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| 74LVTH2245PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,8bit,octal,transceiver; BiCMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; octal; transceiver Technology: BiCMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVTH |
Produkt ist nicht verfügbar |
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| PMEG100T100ELPEZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10A; CFP15B,SOT1289B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Capacitance: 850pF Max. forward voltage: 0.82V Case: CFP15B; SOT1289B Kind of package: reel; tape Max. forward impulse current: 180A |
Produkt ist nicht verfügbar |
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| 74LVTH125BQ,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; DHVQFN14 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: BiCMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVTH |
Produkt ist nicht verfügbar |
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| 74LVTH125PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: BiCMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVTH |
Produkt ist nicht verfügbar |
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BZX384-C3V0,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 3840 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX384-C3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V |
auf Bestellung 27340 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70-06-QR | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1V Leakage current: 10µA Max. forward impulse current: 0.1A Kind of package: reel; tape |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70-06,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
auf Bestellung 7772 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK6D120-60PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -32A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 256mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D210-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D22-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15.7A Pulsed drain current: 89A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D230-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D38-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D43-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D56-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A |
Produkt ist nicht verfügbar |
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| BUK6D72-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D77-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 42A Power dissipation: 18.8W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 167mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK6D81-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W Case: DFN6; SOT1220 Drain-source voltage: 80V Drain current: 6.9A On-state resistance: 197mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 18.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 39A Mounting: SMD |
Produkt ist nicht verfügbar |
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| BUK4D38-20PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Pulsed drain current: -72A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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74LVC2G08DC,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: AND Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Delay time: 11.3ns Family: LVC |
Produkt ist nicht verfügbar |
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74LVC2G08DP,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; TSSOP8; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: AND Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP8 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC2G08GS,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: AND Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Delay time: 11.3ns Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC2G08GT,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: AND Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Delay time: 11.3ns Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC2G08GXX | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; X2SON8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2SON8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Delay time: 11.3ns Family: LVC |
Produkt ist nicht verfügbar |
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74HC2G02DC,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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74HC2G02DP,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP8; Mini Logic; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP8 Manufacturer series: Mini Logic Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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| 74LVC2G07GS,132 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; IN: 1; CMOS,TTL; SMD; XSON6; Mini Logic Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of output: open drain Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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74LVC2G07GV,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; TSOP6; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: TSOP6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of output: open drain Kind of package: reel; tape Family: LVC |
auf Bestellung 2424 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC2G07GW,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; SC88; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: SC88 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of output: open drain Kind of package: reel; tape Family: LVC |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C20,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
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BF821,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 50mA; 250mW; SOT23,TO236AB Kind of package: reel; tape Collector current: 50mA Type of transistor: PNP Power dissipation: 0.25W Polarisation: bipolar Mounting: SMD Case: SOT23; TO236AB Frequency: 60MHz Collector-emitter voltage: 300V |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PHP18NQ10T,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 79W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 243mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PHP79NQ08LT,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 240A; 157W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 47A Pulsed drain current: 240A Power dissipation: 157W Case: SOT78; TO220AB Gate-source voltage: ±15V On-state resistance: 16mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PESD5Z6.0,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 180W; 6.8V; 10A; unidirectional; SOD523 Type of diode: TVS Peak pulse power dissipation: 180W Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 10A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PSMN1R1-30PL,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W Power dissipation: 338W Polarisation: unipolar Kind of package: tube Gate charge: 243nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1609A Mounting: THT Case: SOT78; TO220AB Drain-source voltage: 30V Drain current: 120A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R5-60PLQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 1002A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 223nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN2R6-60PSQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 961A Power dissipation: 326W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| BUK9226-75A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 32A; Idm: 182A; 114W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 32A Pulsed drain current: 182A Power dissipation: 114W Case: DPAK Gate-source voltage: ±10V On-state resistance: 54.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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BCW68HR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 600 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
auf Bestellung 4776 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK7Y1R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 294W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y2R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 190W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 5.45mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y3R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 172W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK961R6-40E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1348A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 1348A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9Y1R6-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 294W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 107.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9Y1R9-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 217W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9Y2R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 163W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 7mΩ Mounting: SMD Gate charge: 78.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9Y2R8-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 172W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| PSMN1R1-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W Type of transistor: N-MOSFET Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 2.3mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 1320A Power dissipation: 306W Gate charge: 136nC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
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| BUK7Y4R8-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 595A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 73.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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|
BZX585-C24,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD523; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 24V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Max. load current: 0.2A Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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 |
74LVC1G79GV,125 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; SC74A Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS; TTL Manufacturer series: Mini Logic Mounting: SMD Case: SC74A Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Trigger: positive-edge-triggered |
auf Bestellung 2871 Stücke: Lieferzeit 14-21 Tag (e) |
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|
PMGD175XNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Case: SC88; SOT363; TSSOP6 On-state resistance: 411mΩ Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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|
PMV25ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 22A Case: SOT23; TO236AB On-state resistance: 39mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
Produkt ist nicht verfügbar |
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 |
PMV45EN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1115mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 7907 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN1R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 790A Power dissipation: 109W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN1R6-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1268A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 2.21mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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|
PSMN1R8-30PL,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1120A Power dissipation: 270W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| 74HCT154DB,112 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP24
Family: HCT
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP24
Family: HCT
Kind of package: tube
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 60+ | 1.2 EUR |
| 79+ | 0.92 EUR |
| 84+ | 0.86 EUR |
| 177+ | 0.83 EUR |
| 74HCT154PW,118 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP24
Family: HCT
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP24
Family: HCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PSMN3R3-80BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 760A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 760A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 74LVTH2245PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,octal,transceiver; BiCMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,octal,transceiver; BiCMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Produkt ist nicht verfügbar
| PMEG100T100ELPEZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 850pF
Max. forward voltage: 0.82V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 850pF
Max. forward voltage: 0.82V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 180A
Produkt ist nicht verfügbar
| 74LVTH125BQ,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; DHVQFN14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; DHVQFN14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Produkt ist nicht verfügbar
| 74LVTH125PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVTH
Produkt ist nicht verfügbar
| BZX384-C3V0,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 3840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 965+ | 0.074 EUR |
| 1615+ | 0.044 EUR |
| 1800+ | 0.04 EUR |
| 2255+ | 0.032 EUR |
| 2385+ | 0.03 EUR |
| BZX384-C3V9,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
auf Bestellung 27340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1080+ | 0.066 EUR |
| 1535+ | 0.047 EUR |
| 1710+ | 0.042 EUR |
| 2255+ | 0.032 EUR |
| 2385+ | 0.03 EUR |
| BAS70-06-QR |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| BAS70-06,215 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
auf Bestellung 7772 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 278+ | 0.26 EUR |
| 379+ | 0.19 EUR |
| 447+ | 0.16 EUR |
| 676+ | 0.11 EUR |
| 811+ | 0.088 EUR |
| 1774+ | 0.04 EUR |
| 1873+ | 0.038 EUR |
| BUK6D120-60PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D210-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D22-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D230-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D38-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D43-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D56-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Produkt ist nicht verfügbar
| BUK6D72-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D77-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK6D81-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Case: DFN6; SOT1220
Drain-source voltage: 80V
Drain current: 6.9A
On-state resistance: 197mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 18.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Case: DFN6; SOT1220
Drain-source voltage: 80V
Drain current: 6.9A
On-state resistance: 197mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 18.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Produkt ist nicht verfügbar
| BUK4D38-20PX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| 74LVC2G08DC,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Produkt ist nicht verfügbar
| 74LVC2G08DP,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; TSSOP8; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; TSSOP8; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| 74LVC2G08GS,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Produkt ist nicht verfügbar
| 74LVC2G08GT,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Produkt ist nicht verfügbar
| 74LVC2G08GXX |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; X2SON8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS,TTL; SMD; X2SON8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Delay time: 11.3ns
Family: LVC
Produkt ist nicht verfügbar
| 74HC2G02DC,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| 74HC2G02DP,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP8; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP8; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| 74LVC2G07GS,132 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; CMOS,TTL; SMD; XSON6; Mini Logic
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; CMOS,TTL; SMD; XSON6; Mini Logic
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| 74LVC2G07GV,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; TSOP6; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSOP6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; TSOP6; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSOP6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 260+ | 0.28 EUR |
| 291+ | 0.25 EUR |
| 343+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| 74LVC2G07GW,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; SC88; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; SC88; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 334+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| BZX84-C20,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 455+ | 0.16 EUR |
| 633+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| BF821,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 50mA; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 300V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 50mA; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 300V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 596+ | 0.12 EUR |
| 697+ | 0.1 EUR |
| 969+ | 0.074 EUR |
| 1025+ | 0.07 EUR |
| PHP18NQ10T,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 79W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 243mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 79W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 243mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PHP79NQ08LT,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 240A; 157W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 240A
Power dissipation: 157W
Case: SOT78; TO220AB
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 240A; 157W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 240A
Power dissipation: 157W
Case: SOT78; TO220AB
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PESD5Z6.0,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 180W; 6.8V; 10A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 180W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 180W; 6.8V; 10A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 180W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PSMN1R1-30PL,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.22 EUR |
| 18+ | 4.03 EUR |
| 19+ | 3.82 EUR |
| PSMN2R5-60PLQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN2R6-60PSQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BUK9226-75A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 32A; Idm: 182A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 32A
Pulsed drain current: 182A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 54.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 32A; Idm: 182A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 32A
Pulsed drain current: 182A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 54.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BCW68HR |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 600
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 600
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
auf Bestellung 4776 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 747+ | 0.096 EUR |
| 913+ | 0.078 EUR |
| 1296+ | 0.055 EUR |
| 1902+ | 0.038 EUR |
| 2598+ | 0.028 EUR |
| 2748+ | 0.026 EUR |
| BUK7Y1R7-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y2R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 190W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 190W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y3R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK961R6-40E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1348A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1348A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1348A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1348A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9Y1R6-40HX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 107.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 107.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9Y1R9-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 217W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 217W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9Y2R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 163W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 78.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 163W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 78.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9Y2R8-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| PSMN1R1-40BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
Produkt ist nicht verfügbar
| BUK7Y4R8-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 595A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 73.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 595A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 73.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BZX585-C24,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Max. load current: 0.2A
Max. forward voltage: 1.1V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Max. load current: 0.2A
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| 74LVC1G79GV,125 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; SC74A
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; SC74A
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Trigger: positive-edge-triggered
auf Bestellung 2871 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 358+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| 439+ | 0.16 EUR |
| 532+ | 0.13 EUR |
| 645+ | 0.11 EUR |
| 842+ | 0.085 EUR |
| 890+ | 0.08 EUR |
| PMGD175XNEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| PMV25ENEAR |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar
| PMV45EN2R |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7907 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 187+ | 0.38 EUR |
| 265+ | 0.27 EUR |
| 315+ | 0.23 EUR |
| 624+ | 0.11 EUR |
| PSMN1R5-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN1R6-30BL,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN1R8-30PL,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar