| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 74AUP1G11GW,125 | NEXPERIA |
 Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP |
Produkt ist nicht verfügbar |
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74AUP2G08DC,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; AUP Type of integrated circuit: digital Kind of gate: AND Number of channels: 2 Technology: CMOS Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Family: AUP Operating temperature: -40...125°C Kind of package: reel; tape Number of inputs: 2 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP2G08GN,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 2 Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Family: AUP Operating temperature: -40...125°C Kind of package: reel; tape Number of inputs: 2 |
Produkt ist nicht verfügbar |
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| 74AUP2G08GS,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 2 Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Family: AUP Operating temperature: -40...125°C Kind of package: reel; tape Number of inputs: 2 |
Produkt ist nicht verfügbar |
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| PSMN4R0-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 472A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| 74HCT2G16GVH | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic Mounting: SMD Case: SC74; TSOP6 Number of channels: 2 Kind of package: reel; tape Technology: TTL Manufacturer series: Mini Logic Operating temperature: -40...125°C Type of integrated circuit: digital Supply voltage: 4.5...5.5V DC Number of inputs: 1 Kind of integrated circuit: buffer Family: HCT |
Produkt ist nicht verfügbar |
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BCM53DSF | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.32W Case: SC74; SOT457; TSOP6 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 140Hz |
Produkt ist nicht verfügbar |
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| BUK7M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 211A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7M22-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W Case: LFPAK33; SOT1210 Polarisation: unipolar Application: automotive industry Power dissipation: 75W Kind of package: reel; tape Gate charge: 23.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 147A Mounting: SMD Drain-source voltage: 80V Drain current: 26A On-state resistance: 55mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| BUK7M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 78A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Mounting: SMD Application: automotive industry Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhanced Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 40A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| BUK7M9R9-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 240A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK33; SOT1210 On-state resistance: 3.05mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M10-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M11-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M11-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain-source voltage: 40V Drain current: 34A On-state resistance: 27.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Pulsed drain current: 193A |
Produkt ist nicht verfügbar |
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| BUK9M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M14-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 31A Pulsed drain current: 176A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M15-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M17-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Mounting: SMD Drain-source voltage: 40V Drain current: 22A On-state resistance: 48.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 38W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.6nC Kind of channel: enhanced Pulsed drain current: 125A Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
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| BUK9M35-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 19A Pulsed drain current: 106A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 88mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M3R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M67-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 85A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 148mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M6R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 311A Power dissipation: 70W Case: LFPAK33; SOT1210 On-state resistance: 15mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M7R2-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 296A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 19.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M85-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 51A Power dissipation: 31W Case: LFPAK33; SOT1210 On-state resistance: 192mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK9M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Mounting: SMD Application: automotive industry Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Kind of channel: enhanced Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 40A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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BZX84-C13,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 6280 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C27,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C3V0,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 3120 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C43,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C47,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C56,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA Mounting: SMD Case: SOT23 Tolerance: ±5% Kind of package: reel; tape Max. load current: 0.2A Power dissipation: 0.25W Zener voltage: 56V Type of diode: Zener Semiconductor structure: single diode Max. forward voltage: 0.9V |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZA856A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SC88A; SOT353 Semiconductor structure: common anode; quadruple Leakage current: 2µA Features of semiconductor devices: ESD protection Max. forward impulse current: 3.75A Peak pulse power dissipation: 24W Max. off-state voltage: 5.6V |
Produkt ist nicht verfügbar |
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| BZA856AVL,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SC88A; SOT353 Semiconductor structure: common anode; quadruple Leakage current: 0.2µA Features of semiconductor devices: ESD protection Max. forward impulse current: 3.5A Peak pulse power dissipation: 6W Max. off-state voltage: 5.6V |
Produkt ist nicht verfügbar |
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| PSMN4R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 95A Pulsed drain current: 378A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN5R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 8.3mΩ Kind of package: reel; tape Power dissipation: 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 74A Gate charge: 56nC Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2824 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK964R4-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 75A Pulsed drain current: 697A Power dissipation: 254W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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BZV55-C30,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 50nA |
auf Bestellung 10285 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC157ABQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC Family: LVC Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: 4 Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: multiplexer Mounting: SMD Case: DHVQFN16 Number of inputs: 2 |
Produkt ist nicht verfügbar |
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PSMN025-100D,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN069-100YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 68A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 0.149Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN2R0-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN2R2-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN4R2-60PLQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 124A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN022-30PL,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 125A Power dissipation: 41W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 4.4nC Kind of package: tube Kind of channel: enhanced |
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PSMN027-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 148A Power dissipation: 103W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN057-200P,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 250W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R7-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R3-60PLQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 793A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN4R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.05mΩ Mounting: THT Gate charge: 70.8nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN4R8-100PSEQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 693A Pulsed drain current: 693A Power dissipation: 405W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN7R0-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN7R6-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 481A Power dissipation: 296W Case: D2PAK; SOT404 On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMNR90-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 243nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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74HCT259D,653 | NEXPERIA |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16; HCT Number of channels: 8 Kind of package: reel; tape Trigger: level-triggered Technology: CMOS; TTL Kind of integrated circuit: D latch Family: HCT Mounting: SMD Operating temperature: -40...125°C Case: SO16 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
auf Bestellung 2543 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT259PW,112 | NEXPERIA |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; tube Number of channels: 8 Kind of package: tube Trigger: level-triggered Technology: CMOS; TTL Kind of integrated circuit: D latch Family: HCT Mounting: SMD Operating temperature: -40...125°C Case: TSSOP16 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP1G11GW,125 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Produkt ist nicht verfügbar
| 74AUP2G08DC,125 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 95+ | 0.76 EUR |
| 106+ | 0.68 EUR |
| 117+ | 0.61 EUR |
| 133+ | 0.54 EUR |
| 262+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 3000+ | 0.25 EUR |
| 74AUP2G08GN,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
Produkt ist nicht verfügbar
| 74AUP2G08GS,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Family: AUP
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 2
Produkt ist nicht verfügbar
| PSMN4R0-40YS,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 74HCT2G16GVH |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Mounting: SMD
Case: SC74; TSOP6
Number of channels: 2
Kind of package: reel; tape
Technology: TTL
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Kind of integrated circuit: buffer
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Mounting: SMD
Case: SC74; TSOP6
Number of channels: 2
Kind of package: reel; tape
Technology: TTL
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Kind of integrated circuit: buffer
Family: HCT
Produkt ist nicht verfügbar
| BCM53DSF |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
Produkt ist nicht verfügbar
| BUK7M12-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7M22-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BUK7M42-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7M8R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Mounting: SMD
Application: automotive industry
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhanced
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Mounting: SMD
Application: automotive industry
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhanced
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BUK7M9R9-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y1R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M10-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M11-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M11-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
Produkt ist nicht verfügbar
| BUK9M12-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M14-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M15-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M17-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M20-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 48.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Pulsed drain current: 125A
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 48.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Pulsed drain current: 125A
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
| BUK9M35-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M3R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M4R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M67-60ELX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M6R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M7R2-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M85-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK9M8R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Mounting: SMD
Application: automotive industry
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhanced
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 21.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Mounting: SMD
Application: automotive industry
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhanced
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 21.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BZX84-C13,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 6280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1100+ | 0.065 EUR |
| 2515+ | 0.028 EUR |
| 2780+ | 0.026 EUR |
| 3495+ | 0.02 EUR |
| 3695+ | 0.019 EUR |
| BZX84-C27,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1370+ | 0.052 EUR |
| 1675+ | 0.043 EUR |
| BZX84-C3V0,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 3120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 920+ | 0.078 EUR |
| 2095+ | 0.034 EUR |
| 2315+ | 0.031 EUR |
| 2915+ | 0.025 EUR |
| 3080+ | 0.023 EUR |
| BZX84-C43,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1045+ | 0.069 EUR |
| 2095+ | 0.034 EUR |
| 2315+ | 0.031 EUR |
| 2915+ | 0.025 EUR |
| 3080+ | 0.023 EUR |
| BZX84-C47,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 455+ | 0.16 EUR |
| 633+ | 0.11 EUR |
| 1051+ | 0.068 EUR |
| 1425+ | 0.05 EUR |
| 1645+ | 0.043 EUR |
| 1880+ | 0.038 EUR |
| 2790+ | 0.026 EUR |
| BZX84-C56,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.25W
Zener voltage: 56V
Type of diode: Zener
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.25W
Zener voltage: 56V
Type of diode: Zener
Semiconductor structure: single diode
Max. forward voltage: 0.9V
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| BZA856A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Produkt ist nicht verfügbar
| BZA856AVL,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 0.2µA
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3.5A
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC88A; SOT353
Semiconductor structure: common anode; quadruple
Leakage current: 0.2µA
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3.5A
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Produkt ist nicht verfügbar
| PSMN4R0-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN5R5-60YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 8.3mΩ
Kind of package: reel; tape
Power dissipation: 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 74A
Gate charge: 56nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 8.3mΩ
Kind of package: reel; tape
Power dissipation: 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 74A
Gate charge: 56nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2824 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 2.07 EUR |
| 38+ | 1.92 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| 500+ | 1.44 EUR |
| BUK964R4-40B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BZV55-C30,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 10285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 358+ | 0.2 EUR |
| 481+ | 0.15 EUR |
| 723+ | 0.099 EUR |
| 878+ | 0.082 EUR |
| 1139+ | 0.063 EUR |
| 1425+ | 0.05 EUR |
| 2646+ | 0.027 EUR |
| 2809+ | 0.025 EUR |
| 74LVC157ABQ,115 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Family: LVC
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: DHVQFN16
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Family: LVC
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: DHVQFN16
Number of inputs: 2
Produkt ist nicht verfügbar
| PSMN025-100D,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN069-100YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN2R0-60PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN2R2-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN4R2-60PLQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN022-30PL,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN027-100PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.95 EUR |
| PSMN057-200P,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.79 EUR |
| 22+ | 3.4 EUR |
| 28+ | 2.63 EUR |
| 29+ | 2.49 EUR |
| PSMN1R7-60BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.96 EUR |
| 22+ | 3.37 EUR |
| 23+ | 3.19 EUR |
| PSMN3R3-60PLQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN4R6-60PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN4R8-100PSEQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R0-100PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R6-100BSEJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN8R0-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.7 EUR |
| 47+ | 1.54 EUR |
| 53+ | 1.37 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
| PSMNR90-30BL,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 74HCT259D,653 |
|
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16; HCT
Number of channels: 8
Kind of package: reel; tape
Trigger: level-triggered
Technology: CMOS; TTL
Kind of integrated circuit: D latch
Family: HCT
Mounting: SMD
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16; HCT
Number of channels: 8
Kind of package: reel; tape
Trigger: level-triggered
Technology: CMOS; TTL
Kind of integrated circuit: D latch
Family: HCT
Mounting: SMD
Operating temperature: -40...125°C
Case: SO16
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
auf Bestellung 2543 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 117+ | 0.61 EUR |
| 151+ | 0.47 EUR |
| 293+ | 0.24 EUR |
| 309+ | 0.23 EUR |
| 74HCT259PW,112 |
|
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; tube
Number of channels: 8
Kind of package: tube
Trigger: level-triggered
Technology: CMOS; TTL
Kind of integrated circuit: D latch
Family: HCT
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; tube
Number of channels: 8
Kind of package: tube
Trigger: level-triggered
Technology: CMOS; TTL
Kind of integrated circuit: D latch
Family: HCT
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.1 EUR |