![BUK9M17-30EX BUK9M17-30EX](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2304/MFG_1727%3BSOT1210%3B%3B8_LFPAK33.jpg)
BUK9M17-30EX Nexperia USA Inc.
![BUK9M17-30E.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 30V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9M17-30EX Nexperia USA Inc.
Description: MOSFET N-CH 30V 37A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M17-30EX nach Preis ab 0.37 EUR bis 1.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BUK9M17-30EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2931 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : Nexperia |
![]() |
auf Bestellung 1505 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
BUK9M17-30EX | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
BUK9M17-30EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
BUK9M17-30EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |