BUK9M8R5-40HX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 40A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 59W (Ta)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.66 EUR |
| 3000+ | 0.63 EUR |
| 7500+ | 0.6 EUR |
| 10500+ | 0.57 EUR |
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Technische Details BUK9M8R5-40HX Nexperia USA Inc.
Description: MOSFET N-CH 40V 40A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 59W (Ta), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M8R5-40HX nach Preis ab 0.43 EUR bis 1.51 EUR
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BUK9M8R5-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M8R5-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M8R5-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 40A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 59W (Ta) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16488 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M8R5-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 40A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M8R5-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M8R5-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Mounting: SMD Application: automotive industry Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Kind of channel: enhanced Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 40A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M8R5-40HX | Hersteller : Nexperia |
MOSFET BUK9M8R5-40H/SOT1210/mLFPAK |
Produkt ist nicht verfügbar |
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| BUK9M8R5-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Mounting: SMD Application: automotive industry Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Kind of channel: enhanced Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 40A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |