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PSMN2R6-60PSQ Nexperia USA Inc.
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Description: MOSFET N-CH 60V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.24 EUR |
10+ | 4.4 EUR |
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Technische Details PSMN2R6-60PSQ Nexperia USA Inc.
Description: MOSFET N-CH 60V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V.
Weitere Produktangebote PSMN2R6-60PSQ nach Preis ab 2.6 EUR bis 5.32 EUR
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PSMN2R6-60PSQ | Hersteller : Nexperia |
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auf Bestellung 4949 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 961A Power dissipation: 326W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
PSMN2R6-60PSQ | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 961A Power dissipation: 326W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |